JPS614179B2 - - Google Patents

Info

Publication number
JPS614179B2
JPS614179B2 JP59250543A JP25054384A JPS614179B2 JP S614179 B2 JPS614179 B2 JP S614179B2 JP 59250543 A JP59250543 A JP 59250543A JP 25054384 A JP25054384 A JP 25054384A JP S614179 B2 JPS614179 B2 JP S614179B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59250543A
Other languages
Japanese (ja)
Other versions
JPS60143633A (en
Inventor
Yoshio Honma
Hisao Nozawa
Yukyoshi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP25054384A priority Critical patent/JPS60143633A/en
Publication of JPS60143633A publication Critical patent/JPS60143633A/en
Publication of JPS614179B2 publication Critical patent/JPS614179B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
JP25054384A 1984-11-29 1984-11-29 Manufacture of semiconductor device Granted JPS60143633A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25054384A JPS60143633A (en) 1984-11-29 1984-11-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25054384A JPS60143633A (en) 1984-11-29 1984-11-29 Manufacture of semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP4771476A Division JPS6012779B2 (en) 1976-04-28 1976-04-28 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS60143633A JPS60143633A (en) 1985-07-29
JPS614179B2 true JPS614179B2 (en) 1986-02-07

Family

ID=17209469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25054384A Granted JPS60143633A (en) 1984-11-29 1984-11-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS60143633A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6158574U (en) * 1984-09-21 1986-04-19

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100233293B1 (en) * 1996-11-26 1999-12-01 김영환 A method for forming field oxide layer in semiconductor device
KR100233266B1 (en) * 1996-11-26 1999-12-01 김영환 Method of forming a device isolation film of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036075A (en) * 1973-05-17 1975-04-04
JPS5039876A (en) * 1973-08-11 1975-04-12

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036075A (en) * 1973-05-17 1975-04-04
JPS5039876A (en) * 1973-08-11 1975-04-12

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6158574U (en) * 1984-09-21 1986-04-19

Also Published As

Publication number Publication date
JPS60143633A (en) 1985-07-29

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