JPS6139518A - Projecting and exposing device - Google Patents

Projecting and exposing device

Info

Publication number
JPS6139518A
JPS6139518A JP16000684A JP16000684A JPS6139518A JP S6139518 A JPS6139518 A JP S6139518A JP 16000684 A JP16000684 A JP 16000684A JP 16000684 A JP16000684 A JP 16000684A JP S6139518 A JPS6139518 A JP S6139518A
Authority
JP
Japan
Prior art keywords
optical system
exposed
pattern
axis
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16000684A
Other languages
Japanese (ja)
Inventor
Shuji Shoda
正田 修二
Norio Kaneko
金子 紀夫
Hideji Sugiyama
秀司 杉山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16000684A priority Critical patent/JPS6139518A/en
Publication of JPS6139518A publication Critical patent/JPS6139518A/en
Pending legal-status Critical Current

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To enable to perform an accurate position detection by a method wherein an optical path length changing means, with which the optical path length of the optical system to be used for alignment can be changed in accordance with the thickness of a substrate, is provided. CONSTITUTION:The quantity of movement calculated by an arithmetic unit 22 based on the thickness value of the original drawing pattern substrate 13, which is set in advance, is picked out from a memory storage 27 by a memory storage selecting circuit 28, and the material 10 to be exposed which is installed on a Z-axis positioning mechanism 21, is set at the appropriate position using the Z- axis positioning mechanism 21, a Z-axis driving motor 20, and a Z-axis position detector 19 which are controlled by a controlling circuit 29. Subsequently, the reference pattern 11 located on the material to be exposed, which is illuminated by a detecting illumination system 17, a detecting illumination system 15 and projection optical system 12, is precisely coincided with the position of focus of the detecting optical system 15, and a clear image can be obtained on a photoelectric detector. The signal of said image is inputted to an arithmetic operating unit 22, and the relative position detection for the original drawing of pattern 13 and the material to be exposed 10 can be performed accurately.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、投影露光装置に係り、特に被露光物上の所望
の位置に、正確に原図パターンを投影露光するための、
原図パターンと被露光物との相対位置ずれ址を検出する
ことのできる投影露光装置に関するものである〇 〔発明の背景〕 投影光学系を通して、直接に、原図パターンと被g光’
!II!tea対位置ずれを検出し、位置決めする例え
は・特開111355−162227号に示す如き通常
の投影“露光装置において妹、一般に第4図に示すより
が検出光学系が用・いられている。すなわち、被露光物
(ウェハ)1上の基準パターン2を投影光学系3を通し
て照明し、逆にその像を投影光学系3を介して、原図パ
ターン基準(レチクル)4に設けられている基iパター
ンでスリット)5上に結像させる−その合成像を検出光
学系6を介して、光電検出器7に導き、被露光′物(多
エバ)11と原図パターシ(レチクル)4の相対ずれ量
を検出′している。いまミ検出光学系6中におかれた、
原、図パターン基板′(レチクル)4を取シ替え、異な
る原図パターンを露光しようとしたとき、この原図パタ
ーン基板の厚さが前の原図パターン基板の厚さと異なる
噛合には、スリットの焦点がレチクル4の下面に結ばな
くなる。すなわち、検出光学系6の光路長が変わるため
、その焦点が下にきてしまい光電検出器7上の検出像に
ボケを生じ、検出精度の得ることができないという欠点
を有している。すなわち、正確な位置検出を行うことが
できないという欠点を有していた。  。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a projection exposure apparatus, and particularly to a projection exposure apparatus for accurately projecting and exposing an original pattern onto a desired position on an object to be exposed.
This invention relates to a projection exposure apparatus capable of detecting relative positional deviation between an original pattern and an exposed object.〇 [Background of the Invention] Through a projection optical system, the original pattern and the exposed object are directly detected.
! II! For example, in a conventional projection exposure apparatus as shown in Japanese Patent Laid-Open No. 111355-162227 for detecting positional deviation and positioning, a detection optical system is generally used more than that shown in FIG. That is, a reference pattern 2 on an object (wafer) 1 to be exposed is illuminated through a projection optical system 3, and conversely, the image is projected onto a base i provided on an original pattern reference (reticle) 4 via the projection optical system 3. The pattern is imaged onto the slit (slit) 5 - the composite image is guided to the photoelectric detector 7 via the detection optical system 6, and the amount of relative deviation between the exposed object (multi-evaporator) 11 and the original pattern (reticle) 4 is detected. is being detected. Now placed in the detection optical system 6,
When replacing the original/figure pattern substrate (reticle) 4 and attempting to expose a different original pattern, if the thickness of this original pattern substrate is different from the thickness of the previous original pattern substrate, the focus of the slit will be It no longer connects to the bottom surface of the reticle 4. That is, since the optical path length of the detection optical system 6 changes, the focal point of the detection optical system 6 is lowered, resulting in a blurred detection image on the photoelectric detector 7, which has the disadvantage that detection accuracy cannot be obtained. That is, it has the disadvantage that accurate position detection cannot be performed. .

〔発明の目的〕[Purpose of the invention]

本発明の目的は、正確な位置検出を行なうことのできる
投影露光装置を提供することKある。
An object of the present invention is to provide a projection exposure apparatus that can perform accurate position detection.

〔発明の概要〕[Summary of the invention]

本発明の原理について、第2図、第3図を用いて説明す
る。すなわち、第2図は、厚さの異なる2つの原図パタ
ーン基板(レチクル)4に対する検出光学系の光路図を
示している。検出光学系の焦点位置がいま、厚さioの
原図パターン基板に調整されているとすると、そ・の焦
点位置は、基板下面h o点にある。ところが、原図パ
ターン基板を交換し、違った原図を露光する際に、原図
パターン基板の厚さは一定していないため、基板の厚さ
が10からtに変化すると、その焦点位置は、110点
からA1点に移動する。その移動距離A。
The principle of the present invention will be explained using FIGS. 2 and 3. That is, FIG. 2 shows an optical path diagram of the detection optical system for two original pattern substrates (reticles) 4 having different thicknesses. Assuming that the focal position of the detection optical system is now adjusted to the original pattern substrate of thickness io, the focal position is at point ho on the bottom surface of the substrate. However, when exchanging the original pattern substrate and exposing a different original, the thickness of the original pattern substrate is not constant, so when the thickness of the substrate changes from 10 to t, the focal position changes to 110 points. Move from to point A1. The moving distance A.

Alは原図パターン基板に対する入射角をθ、屈折角な
ψとすると 一ψ     ゛ AoAt=(t  to)+1(1)    ””(1
)tanθ で表わされる。一方、第3図に示すように、披露光物(
ウェハ)1上の基準パターンの投影光学系3による焦点
位置は、原図パターン基板下面A(1点にあるため、前
記光電検出器7上の像にボケを生じ、検出結果に誤差を
与える。そのため、被露光物(ウェハ1)上の基準パタ
ーン投影光学系3による焦点位置をA1に合致させる必
要がある。
For Al, let the angle of incidence with respect to the original pattern substrate be θ, and the angle of refraction be ψ.
)tanθ. On the other hand, as shown in Figure 3, the unveiling object (
Since the focus position of the reference pattern on the wafer 1 by the projection optical system 3 is at one point on the lower surface A of the original pattern substrate, the image on the photoelectric detector 7 is blurred, giving an error to the detection result. , it is necessary to match the focal position of the reference pattern projection optical system 3 on the object to be exposed (wafer 1) with A1.

両者の焦点位置を合致させるには、投影光学系3と被露
光物1の距離すをΔb変化させれば良い。
In order to match their focal positions, the distance between the projection optical system 3 and the object 1 to be exposed 1 may be changed by Δb.

その鹸離Δbは、基板の厚さ1oに!1lil!!され
た投影光学系3において、基準4と投影光学系3の主点
までの距離を31被露光物1と投影光学系3−!iでの
距離をb1投影光学系3の焦点距離をfとすると、 で表わされる。この(2)式によシ、基準パターンの相
対位置ずれ址を検出する際に、被露光物1と投影光学系
3の距離を、前記(2)式中に示されるΔb変化させる
。すなわち、被露光物1をΔbだけ下げてやることによ
り、原図パターン基板4の厚さが、調整基準値と異なっ
ても、正確な検出値が得られる。相対ずれ址検出後、投
影露光直前に、被露光物1と投影光学系3の距離を正規
位置に戻すことによシ、露光されたパターンには、何ら
影響を与えることはなくなる。
The separation Δb is equal to the thickness of the substrate 1o! 1 lil! ! In the projection optical system 3, the distance between the reference 4 and the principal point of the projection optical system 3 is 31, the object to be exposed 1 and the projection optical system 3-! When the distance at i is b1 and the focal length of the projection optical system 3 is f, it is expressed as follows. According to this equation (2), when detecting the relative positional deviation of the reference pattern, the distance between the exposed object 1 and the projection optical system 3 is changed by Δb shown in the above equation (2). That is, by lowering the exposed object 1 by Δb, an accurate detection value can be obtained even if the thickness of the original pattern substrate 4 differs from the adjustment reference value. By returning the distance between the object 1 to be exposed and the projection optical system 3 to the normal position immediately before projection exposure after detecting the relative deviation, the exposed pattern will not be affected in any way.

したがって、本発明は、原図パターン基板の厚さに応じ
た2軸位置決め機構を駆動する駆動信号を記憶した記憶
装置から、原図パターン基板の厚さに対応したアライメ
ント光学系の光路長を選択し、被露光物体を該光路長が
変イμする方向に移動させることにより正確な位置検出
を行なおうというものでおる。
Therefore, the present invention selects the optical path length of the alignment optical system corresponding to the thickness of the original pattern substrate from a storage device storing drive signals for driving the two-axis positioning mechanism according to the thickness of the original pattern substrate, The idea is to perform accurate position detection by moving the object to be exposed in a direction in which the optical path length changes.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例について説明する。 Examples of the present invention will be described below.

紀1図には、本発明の一実施例が示されている。FIG. 1 shows an embodiment of the present invention.

図において、X−Y位置決め機構24の上に2軸位置決
め機構21が設けられている。この2軸位置決め機構2
1の上に被露光物(ウエノ・)10が搭載されている。
In the figure, a two-axis positioning mechanism 21 is provided above an X-Y positioning mechanism 24. This two-axis positioning mechanism 2
An object to be exposed (Ueno) 10 is mounted on the substrate 1 .

この被露光物1は、基準ノくターン11が形成されてお
り、この−會°°準ノくターンが投影光学系12を介し
て原図パターン基板130基準パターン(スリット)1
4に結像される。この結像状態がミラー18で曲げられ
、検出光学系15を介して光電検出器16に供給される
。この検出光学系150間には、検出照明系17が設け
られている。
The object to be exposed 1 has a reference notch turn 11 formed therein, and this -°° quasi-notch turn is passed through a projection optical system 12 to an original pattern substrate 130 and a reference pattern (slit) 1.
4. This imaged state is bent by a mirror 18 and supplied to a photoelectric detector 16 via a detection optical system 15. A detection illumination system 17 is provided between the detection optical systems 150.

一方、原図パターン基板13の上方にはレンズが、また
その上にはシャッター25が設けられている。このシャ
ッター25を介して露光照明系26がレンズに供給され
ている。また、前記Z軸位置決め機構21には、Z軸駆
動モーフ20が設けられておシ、Z軸方向の制御が行な
われるように構成されている。また、この2軸位置決め
機構21には、2軸位置検出器19が設置されている。
On the other hand, a lens is provided above the original pattern board 13, and a shutter 25 is provided above the lens. An exposure illumination system 26 is supplied to the lens through this shutter 25. Further, the Z-axis positioning mechanism 21 is provided with a Z-axis drive morph 20 and is configured to perform control in the Z-axis direction. Further, a two-axis position detector 19 is installed in this two-axis positioning mechanism 21 .

このZ軸位置検出器19には、制御回路29が接続され
ており、この制御回路29によって、2軸駆動モータ2
0が制御される。
A control circuit 29 is connected to this Z-axis position detector 19, and this control circuit 29 controls the two-axis drive motor 2.
0 is controlled.

この制御回路20には、演算器22が接続されている。A computing unit 22 is connected to this control circuit 20 .

゛この演算器22には、A/D変換器23を介して光電
検出器が接続されている。また、この演算器22には記
憶装置選択回路28が接続されておυ、この記憶装置選
択回路28には複数の記憶装置が接続されている。
``A photoelectric detector is connected to this arithmetic unit 22 via an A/D converter 23. Further, a storage device selection circuit 28 is connected to this arithmetic unit 22, and a plurality of storage devices are connected to this storage device selection circuit 28.

焦点合わせのためのZ軸位置法め機構21は、2軸駆動
モータ20によ如上下に駆動される。また、2軸位置決
め機構21には、2軸位置検出器19によって検出され
た値に基づき、それぞれが演算器23によシ、フィード
バック制御される。
A Z-axis positioning mechanism 21 for focusing is vertically driven by a two-axis drive motor 20. Further, the two-axis positioning mechanism 21 is each subjected to feedback control by a computing unit 23 based on the values detected by the two-axis position detector 19.

2軸位置決め機構21上に装着された被露光物10は、
あらかじめ設定された原図パターン基板13の厚さ値に
より、前記(1)(2)式より、演算器22で演算され
た移動量を記憶装置選択回路28によシ、該当記憶装@
27よシ取シ出し、適正位置に、制御回路29によシ制
御された2軸位置決め機構21、z軸駆動モータ20、
z軸位置検出器19によシ設定される。その後、検出照
明系17、検出光学系15及び投影光学系12により照
明された被露光物上の基準パターン11が、検出光学系
15の焦点位置に正しく合致し、光電検出器16上に明
瞭な像が得られる。この像の信号が、光電検出器16、
A/D変換器23によシ、演算器22に取り込まれ、原
図パターン13と被露光物10の相対位置検出が正確に
行なわれる。
The exposed object 10 mounted on the two-axis positioning mechanism 21 is
Based on the thickness value of the original pattern board 13 set in advance, the movement amount calculated by the calculator 22 from the above equations (1) and (2) is sent to the storage device selection circuit 28, and the corresponding storage device @
27, remove the screw from the side, place it in the proper position, and move the two-axis positioning mechanism 21 controlled by the control circuit 29, the z-axis drive motor 20,
It is set by the z-axis position detector 19. Thereafter, the reference pattern 11 on the object to be exposed illuminated by the detection illumination system 17, the detection optical system 15, and the projection optical system 12 correctly matches the focal position of the detection optical system 15, and a clear image appears on the photoelectric detector 16. An image is obtained. The signal of this image is transmitted to the photoelectric detector 16,
The data is input to the arithmetic unit 22 by the A/D converter 23, and the relative position between the original pattern 13 and the object 10 to be exposed is accurately detected.

その後再び、Z軸駆動モータ20XZ軸位置検出器19
.2軸位置決め機構21により、投影光学系12の焦点
位tK、被露光物10が設定され、X−Y位置決め機構
24により、被−光物1oを指示位置に移動し、露光照
明系26のシャッター25を開閉し、露光を行なう。
After that, the Z-axis drive motor 20XZ-axis position detector 19
.. The two-axis positioning mechanism 21 sets the focal position tK of the projection optical system 12 and the object 10 to be exposed, and the X-Y positioning mechanism 24 moves the object 1o to the designated position and opens the shutter of the exposure illumination system 26. 25 is opened and closed to perform exposure.

したがって、本実施例によれば、厚さの異なる原図パタ
ーン基板を用いても、原図パターンと被露光物の相対位
置検出において得られるパターン信号に変化を生じない
ため、常に正確な相対位置合わせができ、かつ、被露光
物上に露光される1に光パターンには、何ら影響を及ぼ
さない効果がある。
Therefore, according to this embodiment, even if original pattern substrates with different thicknesses are used, there is no change in the pattern signal obtained when detecting the relative position of the original pattern and the exposed object, so accurate relative positioning is always possible. This has the effect of not having any effect on the light pattern exposed on the object to be exposed.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明によれば、正確な位侭検出
を行なうことができる。
As described above, according to the present invention, accurate position detection can be performed.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の実施例を示す図、第2図は原図パタ
ーン基板部分における検出光学系の光路図、第3図は投
影携学系の光路図、第4図は従来の投影露光装置を示す
概略図である。 10・・・被露光物、11・・・基準パターン、12・
・・投影光学系、13・・・原図パターン基板、14・
・・基準パターン、15・・・検出光学系、16・・・
光τti検出器、17・・・検出照明系、18・・・ミ
ラー、19・・・Z軸位置検出器、20・・・2軸駆動
モータ、21・・・2軸位置決め機構、22・・・演算
器、23・・・A/D変換器、24・・・X−Y位置決
め機構、25・・・7ヤツター、26・・・露光照明系
、27・・・記憶装置、28・・・記憶装置選択回路、
29・・・制御回路。
Fig. 1 is a diagram showing an embodiment of the present invention, Fig. 2 is an optical path diagram of the detection optical system in the original pattern board portion, Fig. 3 is an optical path diagram of the projection portable system, and Fig. 4 is a conventional projection exposure method. FIG. 2 is a schematic diagram showing the device. 10...Exposed object, 11...Reference pattern, 12.
...Projection optical system, 13...Original pattern board, 14.
...Reference pattern, 15...Detection optical system, 16...
Optical τti detector, 17... Detection illumination system, 18... Mirror, 19... Z-axis position detector, 20... 2-axis drive motor, 21... 2-axis positioning mechanism, 22... - Arithmetic unit, 23... A/D converter, 24... X-Y positioning mechanism, 25... 7-layer, 26... Exposure illumination system, 27... Storage device, 28... storage device selection circuit;
29...control circuit.

Claims (1)

【特許請求の範囲】[Claims] 1、パターンとアライメント用マークが形成されている
基板と、前記パターンを光照射によりアライメント用マ
ークを有する被露光体に転写する転写手段と、前記基板
の光透過を利用して前記両マークの重ね合せ像を予め定
められた位置に形成するためのアライメント用光学系と
、このアライメント用光学系の光路長を前記基板の厚さ
に応じて変える光路長可変手段とを備えたことを特徴と
する投影露光装置。
1. A substrate on which a pattern and an alignment mark are formed, a transfer means for transferring the pattern to an exposed object having the alignment mark by irradiation with light, and superposition of both the marks using light transmission of the substrate. It is characterized by comprising an alignment optical system for forming a combined image at a predetermined position, and an optical path length variable means for changing the optical path length of the alignment optical system according to the thickness of the substrate. Projection exposure equipment.
JP16000684A 1984-07-30 1984-07-30 Projecting and exposing device Pending JPS6139518A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16000684A JPS6139518A (en) 1984-07-30 1984-07-30 Projecting and exposing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16000684A JPS6139518A (en) 1984-07-30 1984-07-30 Projecting and exposing device

Publications (1)

Publication Number Publication Date
JPS6139518A true JPS6139518A (en) 1986-02-25

Family

ID=15705936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16000684A Pending JPS6139518A (en) 1984-07-30 1984-07-30 Projecting and exposing device

Country Status (1)

Country Link
JP (1) JPS6139518A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03112123A (en) * 1989-09-27 1991-05-13 Canon Inc Aligner

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03112123A (en) * 1989-09-27 1991-05-13 Canon Inc Aligner

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