JPS6138848B2 - - Google Patents
Info
- Publication number
- JPS6138848B2 JPS6138848B2 JP54022931A JP2293179A JPS6138848B2 JP S6138848 B2 JPS6138848 B2 JP S6138848B2 JP 54022931 A JP54022931 A JP 54022931A JP 2293179 A JP2293179 A JP 2293179A JP S6138848 B2 JPS6138848 B2 JP S6138848B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- radioactive substance
- item
- wafer
- board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 9
- 239000000941 radioactive substance Substances 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 3
- 229910052695 Americium Inorganic materials 0.000 claims description 2
- LXQXZNRPTYVCNG-UHFFFAOYSA-N americium atom Chemical group [Am] LXQXZNRPTYVCNG-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims 7
- 238000005468 ion implantation Methods 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012857 radioactive material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
Landscapes
- Element Separation (AREA)
- Measurement Of Radiation (AREA)
Description
【発明の詳細な説明】
本発明は半導体ウエハの番号付け方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for numbering semiconductor wafers.
半導体ウエハ上に半導体装置を形成するに際し
て製造工程の管理等のために、ウエハ識別用の番
号が付与される。 When semiconductor devices are formed on a semiconductor wafer, a wafer identification number is assigned for management of the manufacturing process and the like.
このために従来はダイヤモンドツールを用いて
ウエハを堀り番号を書込んでいたが、このような
方法ではウエハからシリコン粉末が飛散したり、
書込んだ部分がウエハ上に形成される半導体装置
の製造過程において熱処理を施こすとウエハの結
晶欠陥の核となつたり、亀裂が入つたりする欠点
があつた。 For this purpose, conventionally a diamond tool was used to drill the wafer and write the number, but this method could cause silicon powder to scatter from the wafer.
When heat treatment is applied during the manufacturing process of a semiconductor device in which written portions are formed on a wafer, there is a drawback that they become the nucleus of crystal defects in the wafer or cause cracks.
本発明は従来のこのような欠点を解決し、容易
にしかも半導体ウエハに何ら影響を及ぼすことの
ない番号付け方法を提供することを目的とし、そ
の特徴は、半導体ウエハ周縁部の所定領域に放射
性物質を選択的に注入して番号付けを行なうこと
にある。 The purpose of the present invention is to solve these conventional drawbacks and provide a numbering method that is easy and does not affect the semiconductor wafer in any way. The purpose is to selectively inject substances and number them.
以下、図面を参照して本発明を説明する。 The present invention will be described below with reference to the drawings.
図は本発明の一実施例を示す図である。 The figure shows an embodiment of the present invention.
即ち、図ａに示すようにステージ１上に番号付
けを行うべき半導体ウエハ２を載置しイオン注入
装置３によりアメリシウム（241Am、半減期458
年）等の放射性物質を注入する。 That is, as shown in Figure a, a semiconductor wafer 2 to be numbered is placed on a stage 1, and americium ( 241 Am, half-life 458
Inject radioactive substances such as
この際、例えば241Amを強度200KeVで注入す
るとシリコンウエハには30Å程度の深さまで達す
るがウエハ及びそこに形成される半導体装置には
何ら影響はない。 At this time, for example, if 241 Am is implanted at an intensity of 200 KeV, it will reach a depth of about 30 Å into the silicon wafer, but will not have any effect on the wafer or the semiconductor devices formed there.
ステージ１には駆動装置４が設けられており、
ステージ１を間欠的に矢印方向に回転させる。 The stage 1 is provided with a drive device 4,
Stage 1 is intermittently rotated in the direction of the arrow.
このようにして図ｂに示すようにウエハの所定
領域a1〜a8に対して放射性物質を選択的に注入す
る。 In this way, radioactive material is selectively injected into predetermined areas a1 to a8 of the wafer, as shown in FIG. b.
ここで例えば注入した領域を“１”、注入しな
かつた領域を“０”とすることにより２進８ビツ
トの番号情報が書込まれる。 For example, 8-bit binary number information is written by setting the implanted area to "1" and the non-injected area to "0".
従つて図の斜線を施こした領域a5、a8のみに放
射性物質を注入することにより番号情報
00001001、即ち番号“９”が番号付けされたこと
になる。 Therefore, number information can be obtained by injecting radioactive material only into the shaded areas a5 and a8 in the figure.
00001001, that is, the number "9" is assigned.
一方このようにして番号付けされた半導体ウエ
ハから番号を読取る場合には、半導体ウエハ周縁
部上にガイカーカウンタやシンチレーシヨンカウ
ンタ等の放射線検知器を設けておき、半導体ウエ
ハを図ｂの矢印方向に回転させて放射線の検知位
置を知ることによつて電気的に読取ることができ
るし、またウエハ上に螢光塗料を設けておくこと
により、放射性元素が存在する部分では発光する
ので目視することもできる。 On the other hand, when reading the number from a semiconductor wafer numbered in this way, a radiation detector such as a guyker counter or a scintillation counter is provided on the periphery of the semiconductor wafer, and the semiconductor wafer is moved in the direction of the arrow in Figure b. It can be read electrically by rotating the wafer to determine the radiation detection position, and by providing fluorescent paint on the wafer, it emits light in areas where radioactive elements are present, so it can be visually observed. You can also do it.
尚、上記実施例ではシリコンウエハについて説
明したが本発明はこれに限らずサフアイア等の場
合にも適用される。 In the above embodiments, a silicon wafer has been described, but the present invention is not limited to this, but can also be applied to saphire and the like.
以上説明したように本発明によれば、容易に、
しかも半導体ウエハに何ら影響を及ぼさずに番号
付けが行なわれ、歩留りよく適確に半導体装置が
製造できる。 As explained above, according to the present invention, it is easy to
Furthermore, numbering is performed without affecting the semiconductor wafer in any way, and semiconductor devices can be manufactured accurately with high yield.
図は本発明の一実施例を示す図で、図ａは番号
付けを行なうための装置を説明するための図、図
ｂは番号付けがされた半導体ウエハを示す図であ
る。
図において２は半導体ウエハ、３はイオン注入
装置、４はステージ駆動器、a1〜a8はウエハ上の
所定領域を示す。
The figures show one embodiment of the present invention, in which Figure a is a diagram for explaining a numbering device, and Figure b is a diagram showing numbered semiconductor wafers. In the figure, 2 is a semiconductor wafer, 3 is an ion implanter, 4 is a stage driver, and a 1 to a 8 are predetermined areas on the wafer.
Claims (1)
可能とする駆動装置を備えたステージ上に番号付
けを行うべき基板を載置し、 該イオン注入装置により該基板の所定領域に放
射性物質を選択的にイオン注入する第１の工程
と、 該ステージを該駆動装置で間欠的に所定間隔駆
動する第２の工程とを有し、 上記第１及び第２の工程を繰り返し、 該基板周縁部の分離された複数の所定領域に放
射性物質を選択的に注入して放射性物質有無のビ
ツト情報による番号付けをなすことを特徴とする
基板の番号付け方法。 ２ 上記駆動が回転駆動である第１項記載の方
法。 ３ 上記放射性物質がアメリシウムである第１項
記載の方法。 ４ 上記基板が半導体ウエハもしくはサフアイア
である第１項記載の方法。 ５ 基板周縁部で分離された複数の所定領域に選
択的にイオン注入された放射性物質によりビツト
情報番号付けされた基板の読取り方法であつて、
該基板周縁部上に設けられた放射線検知器と該基
板との相対的移動により前記イオン注入された放
射性物質有無のビツト情報を検知し、電気的読取
りをなすことを特徴とする基板の番号読取方法。[Claims] 1. A substrate to be numbered is placed on a stage installed in an ion implantation device and equipped with a drive device that enables intermittent driving, and the ion implantation device moves the substrate to a predetermined position. A first step of selectively ion-implanting a radioactive substance into a region, and a second step of intermittently driving the stage at predetermined intervals with the drive device, and repeating the first and second steps. A method for numbering a substrate, comprising selectively injecting a radioactive substance into a plurality of separated predetermined areas on the peripheral edge of the substrate, and numbering the areas based on bit information indicating the presence or absence of the radioactive substance. 2. The method according to item 1, wherein the drive is rotational drive. 3. The method according to item 1, wherein the radioactive substance is americium. 4. The method according to item 1, wherein the substrate is a semiconductor wafer or sapphire. 5. A method for reading a substrate numbered with bit information using a radioactive substance selectively implanted into a plurality of predetermined regions separated at the periphery of the substrate, comprising:
Reading the number of the board, characterized in that bit information indicating the presence or absence of the ion-implanted radioactive substance is detected by relative movement of the radiation detector provided on the periphery of the board and the board, and the information is electrically read. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2293179A JPS55115325A (en) | 1979-02-28 | 1979-02-28 | Numbering method of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2293179A JPS55115325A (en) | 1979-02-28 | 1979-02-28 | Numbering method of semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55115325A JPS55115325A (en) | 1980-09-05 |
| JPS6138848B2 true JPS6138848B2 (en) | 1986-09-01 |
Family
ID=12096368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2293179A Granted JPS55115325A (en) | 1979-02-28 | 1979-02-28 | Numbering method of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55115325A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05121521A (en) * | 1991-10-29 | 1993-05-18 | Komatsu Electron Metals Co Ltd | Apparatus and method for manufacture of semiconductor wafer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5227351A (en) * | 1975-08-27 | 1977-03-01 | Hitachi Ltd | Wafer process control system |
| JPS5339060A (en) * | 1976-09-22 | 1978-04-10 | Hitachi Ltd | Lot number marking method to wafers |
-
1979
- 1979-02-28 JP JP2293179A patent/JPS55115325A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5227351A (en) * | 1975-08-27 | 1977-03-01 | Hitachi Ltd | Wafer process control system |
| JPS5339060A (en) * | 1976-09-22 | 1978-04-10 | Hitachi Ltd | Lot number marking method to wafers |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55115325A (en) | 1980-09-05 |
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