JPS613320B2 - - Google Patents

Info

Publication number
JPS613320B2
JPS613320B2 JP57109044A JP10904482A JPS613320B2 JP S613320 B2 JPS613320 B2 JP S613320B2 JP 57109044 A JP57109044 A JP 57109044A JP 10904482 A JP10904482 A JP 10904482A JP S613320 B2 JPS613320 B2 JP S613320B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57109044A
Other languages
Japanese (ja)
Other versions
JPS593098A (ja
Inventor
Mutsukazu Kamo
Yoichiro Sato
Seiichiro Matsumoto
Nobuo Sedaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Original Assignee
KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO filed Critical KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Priority to JP57109044A priority Critical patent/JPS593098A/ja
Priority to US06/442,506 priority patent/US4434188A/en
Publication of JPS593098A publication Critical patent/JPS593098A/ja
Publication of JPS613320B2 publication Critical patent/JPS613320B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
JP57109044A 1981-12-17 1982-06-24 ダイヤモンドの合成法 Granted JPS593098A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57109044A JPS593098A (ja) 1982-06-24 1982-06-24 ダイヤモンドの合成法
US06/442,506 US4434188A (en) 1981-12-17 1982-11-17 Method for synthesizing diamond

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57109044A JPS593098A (ja) 1982-06-24 1982-06-24 ダイヤモンドの合成法

Publications (2)

Publication Number Publication Date
JPS593098A JPS593098A (ja) 1984-01-09
JPS613320B2 true JPS613320B2 (cg-RX-API-DMAC10.html) 1986-01-31

Family

ID=14500180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57109044A Granted JPS593098A (ja) 1981-12-17 1982-06-24 ダイヤモンドの合成法

Country Status (1)

Country Link
JP (1) JPS593098A (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19543722A1 (de) * 1994-11-25 1996-05-30 Kobe Steel Ltd Verfahren zur Herstellung von Substraten zur Bildung einkristalliner Diamantfilme durch chemisches Aufdampfen
DE19543723A1 (de) * 1994-11-25 1996-05-30 Kobe Steel Ltd Verfahren zur Herstellung einkristalliner Diamantfilme

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0818905B2 (ja) * 1987-04-22 1996-02-28 出光石油化学株式会社 ダイヤモンドの合成方法および合成装置
EP0423498B1 (en) * 1989-09-20 1995-08-23 Sumitomo Electric Industries, Ltd. Method of and apparatus for synthesizing hard material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19543722A1 (de) * 1994-11-25 1996-05-30 Kobe Steel Ltd Verfahren zur Herstellung von Substraten zur Bildung einkristalliner Diamantfilme durch chemisches Aufdampfen
DE19543723A1 (de) * 1994-11-25 1996-05-30 Kobe Steel Ltd Verfahren zur Herstellung einkristalliner Diamantfilme
DE19543722C2 (de) * 1994-11-25 1998-02-19 Kobe Steel Ltd Verfahren zur Herstellung von für die Gasphasenabscheidung einkristalliner Diamantschichten geeigneten Substraten

Also Published As

Publication number Publication date
JPS593098A (ja) 1984-01-09

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