JPS613139A - Radiation sensitive composition and formation of pattern by using it - Google Patents

Abstract

PURPOSE:To obtain a resist pattern high in coat thickness and resolution by irradiation of radiation and resistant to RIE of oxygen by using a radiation sensitive compsn. contg. a silicone compd. having a specified phenolic OH group and a phenol resin, and using it as the coating film of the upper layer. CONSTITUTION:The silicon compd. having a phenolic OH group is selected from compds. represented by the formula in which R1 is a substituent selected from a group of Si(CH3)3, OSi(CH3)3, and O(CH2).nSi(CH3)3, n>=1; and R2-R5 are each same as R1 or the selected substituent. It is preferable for said compd. to have >=2 silicon groups from the view point of voltatility, and said phenol resin is selected from a group, such as polyvinylphenol, novolak resins, and their halides. This compsn. is used for the upper layer resist of two-layer structure process, and first an org. layer is formed, and this is coated with a soln. of said compsn. by using the spinner to form the upper layer resist film.

Description

Detailed Description of the Invention [Field of Application of the Invention] The present invention relates to a radiation-sensitive composition suitable for a resist film for microfabrication of semiconductor devices, etc., and a pattern forming method using the same. Pattern formation using a two-layer structure resist with high resolution using a radiation-sensitive composition suitable as a resist film for pattern formation and a thick coating film using the composition by irradiation with light, electron beams, ion beams, X-rays, etc. Between the modulus lζ.

[Background of the invention]

A coating film made of a radiation-sensitive composition is used as a resist film for microfabrication of semiconductor devices and the like. Generally, the surface of a substrate such as a semiconductor element that is subjected to etching and sawing using a resist pattern is not necessarily flat, but often has various uneven steps. A resist film coated on a substrate having such a step difference needs to be thick enough to cover the step difference. Therefore, the resist film after coating has a non-uniform thickness, and as the pattern to be formed becomes finer, its resolution and accuracy are greatly affected by the step difference. Conventionally, a single-layer coating film of a radiation-sensitive composition has been used as this resist film.5However, when a single-layer resist film is applied using the commonly used spin coating method using a spinner, A coating film with uneven thickness follows the unevenness.

When this resist film is irradiated with radiation having a fine desired pattern, reflection and scattering from the uneven substrate surface occur, deteriorating the accuracy of the irradiation pattern. In particular, negative resists that utilize crosslinking reactions have a problem in that they swell during development, resulting in poor pattern accuracy and resolution. In order to improve the accuracy and resolution of the resist pattern, it is desirable that the thickness of the resist film be thinner and more uniform.

On the other hand, in the etching process of resist films, there is a tendency to use dry etching using plasma in order to improve etching accuracy. This dry etching method includes an ion milling method, a reactive sputtering method, a μ-iron method, a plasma method, and the like. In addition, high-speed etching has recently begun to be considered, and it is desired to improve the resistance of resist films to dry etching. In order to improve resistance to this dry etching, a resist film as thick as possible is required.

It is difficult to satisfy these contradictory demands mentioned above with a single-layer resist process, and various multi-layer structured resist films and pattern formation methods using the same have been proposed as resist processes to solve this problem. There is. In those methods.

ti) A resist process consisting of a three-layer structure.

(2) PCM (Portable Container) is a two-layer structure process in which both the upper and lower resist layers are photosensitive.
4ormable Masking) method.

(3) Two-layer structure process using inorganic resist.

(4) Single-layer structure process using a silicon-containing polymer as the upper layer.

Among them, the most commonly used method is the pattern forming method using a three-layer resist. The process of (I) is carried out by Be1l Lab.
(J, M, Moran and D, Mayda
n, Be1l SystemTech, J, 58
．． 1027 (I979), the lower layer is an organic polymer film that can be removed by oxygen RIE (reactive ion etching), the middle layer is an inorganic film such as aluminum, polysilicon, or sulfur dioxide, and the upper layer is made of radiation. Consisting of a resist film made of a sensitive composition, the upper resist film in this case is thinner than when used alone, and is coated on a surface flattened by the lower and intermediate layers, resulting in a uniform coating. It becomes a thin film. In this process, the upper resist film is irradiated with radiation having a desired pattern and developed to obtain an upper layer with a desired pattern. next,
Using this upper layer as a mask, a pattern is transferred to the inorganic intermediate layer by dry etching. Finally, using the intermediate layer pattern as a mask, the pattern is transferred to the underlying organic polymer film by oxygen RIE to form a thick organic polymer film pattern. In this way, the three-layer structure resist process is not only complicated, but also has difficult problems such as the need to form the intermediate inorganic film thinly and without pinholes. ing.

Method (2) is I B M (7) Lin (B,
J,Il:,in,J,Electroche
mSoc, 127.202 (I980)), and usually includes deep ultraviolet light (Deep U
A layer of polymer (for example, polymethyl methacrylate) that is degraded by V light (hereinafter abbreviated as DUV light) is formed, and a BON-type photoresist layer is usually formed as an upper layer.

This upper layer is then irradiated with ultraviolet light through a mask with a desired pattern, developed to form a desired pattern, and then, using this as a mask, the lower resist layer is irradiated with DUV light. In this case, the upper resist film is coated with DUV in advance.
Choose one that absorbs light strongly. The polymer in the lower layer of the DUV light irradiated area collapses and becomes easily soluble in the developer, making it possible to transfer the pattern to the lower layer. The problem with this method is that a degraded layer is likely to form in the boundary area between the lower layer and the upper layer, which adversely affects the underlying DUV photoresist film.

Furthermore, since a material with low dry etching resistance such as polymethyl methacrylate (PMMA) is used for the lower layer, the conditions for tri-etching are restricted.

(3) Method using an inorganic resist film [K, L, T
ai, WR, 5iclair, R, G, Vadi
msky, J.M., Moran and M.
J, Rand.

J, Vac, Sic, Techno1,, 16
．． 1977 (I979)') takes advantage of the fact that a 5e-Ge-based inorganic resist film has extremely high resistance to oxygen RIE, and replaces the roles of the upper and middle layers of the conventional three-layer structure resist. , which is supported by an inorganic resist film. However, in the formation of this inorganic resist film,
High-frequency sputtering or vapor deposition must be used, and no significant process improvements can be expected compared to three-layer resists.

Method (4) uses a resist material containing polytursesquioxane as an upper layer, and this silicon compound is exposed to oxygen RIE.
Taking advantage of the resist's resistance to water, the upper resist film plays the roles of the upper layer and intermediate layer of the three-layer resist (Japanese Patent Application Laid-Open No. 141642', 1983). Unlike the process using an inorganic resist film, this process using a two-layer resist allows for spin coating using a spinner, and improvements in the process are desired. However, these resist films are sensitive to electron beams and DUV light, and cannot be exposed to the visible light exposure equipment currently used in semiconductor manufacturing, so that patterns cannot be formed on them.

Furthermore, these resist films utilize a crosslinking reaction, and have had problems such as swelling during development which adversely affects pattern accuracy and resolution.

[Object of the Invention] An object of the present invention is to solve the above-mentioned drawbacks of the prior art, to be particularly effective in microfabrication of substrates having steps, and to be effective in using single-view light such as ultraviolet light, electron beams, ion beams, and X-rays. A radiation-sensitive composition suitable as a pattern-forming resist film, which has a thick coating film and high resolution when irradiated with radiation including oxygen, and is resistant to oxygen RIE, and a two-layer resist using the same. To provide a pattern formation method by.

[Summary of the invention]

The present invention utilizes the fact that a coating film formed by adding a silicone compound containing a phenolic hydroxyl group to a radiation-sensitive composition mainly composed of a phenolic resin exhibits resistance to RIE containing oxygen. be. That is, in place of an inorganic intermediate layer or an inorganic resist layer having oxygen RIE resistance in a conventional multilayer structure resist, the present invention uses a radiation-sensitive composition containing a soricon compound having a phenolic hydroxyl group and a phenolic resin, and a radiation-sensitive composition containing a phenolic resin. This is a pattern forming method using a two-layer resist, which is based on the use of a two-layer resist as the upper coating film.

The silicon compound having a phenolic hydroxyl group of the present invention is selected from those represented by the following general formula (I).

H [wherein, R+ LtSi(CH3)3, OSi
(CR3)3. andhiO(CHi)nSi (CH3)3
represents a substituent selected from the group consisting of (n≧1), and R,, R,, R, and R5 are 3i (CH3)s +
O3i (CH3)3.0(CHz)nSj(CH3)
3(n)l), hydrogen.

Halogen, hydroxy group, alkyl group, nitro group.

Represents a substituent selected from the group consisting of an alkylamino group, an acyl group, a dialkylamino group, an alkoxy group, a sulfonic acid, a sulfonic acid ester, a carboxylic acid, and an ester of a carboxylic acid. ] These silicon compounds having phenolic hydroxyl groups are specifically selected from the following, for example.

(llo-) listylsilylphenol (2) m-trimethylsilylphenol (3i p-trimethylsilylphenol + 412.4-bis(trimethylsilyl)
Phenol + 512.5-Bis(trimethylsilyl)phenol + 6) 3,5-bis(trimethylsilyl)phenol (7) o-hydroxyphenoxytrimethyl 7 run + 81 0-hydroxyphenoxymethylsilane (9
13-(o-hydroquinphenoquinepropyl)trimethylsilane+101 2.4.6-hlis(trimethylsilyl)
Phenol + 111 2.3.5- ) Lis(trimethylsilyl)
Phenol As a result of various studies, the present inventors discovered that a silicon compound having a phenolic hydroxyl group has the best compatibility with phenolic resin and development characteristics during pattern formation as a resist film. The invention was completed.

Furthermore, in consideration of its volatility, it is more preferable to select a compound containing two or more silicones as the silicon compound represented by the general formula (I). Furthermore, two or more kinds of silicon compounds represented by the general formula (It) can be used in combination.

The phenolic resin of the present invention is selected from, for example, polyvinylphenol, novola resin, and their halides. Furthermore, two or more of these may be used in combination.

In the present invention, the quinonediazide compound used as a positive photoresist includes:

It is selected from the compounds represented by the general formula (TI) shown in Table 1. Examples of the substituent (R) of the compound represented by the general formula (III) include those shown in Table 1.

In addition to the quinonediazide compounds shown in Table 1, quinonediazide compounds used in known photosensitive compositions can also be used, or two or more of these can be used in combination.

In the present invention, the azide compound to be used as a negative resist is selected from among the following, for example.

+11 3.3'-diazide diphenyl sulfone (2)
4-Azidochalcone + 3) 2.6-bis(4'-azidobenzal)-4-methylcyclohexane + 41 1.4'-azidobenzylidene-3-α-hydroxy-41-azidobenzylindene (5) 3-(4 '-(I)-azidophenyl)-vinylene]-5,5-dimethyl-2-cyclohexene-1
-one (6) 3-(4'-(p-azidophenyl)
-1',3'-butadienyl]-5,5-dimethyl-2
-Cyclohexen-1-one An appropriate azide compound can also be selected depending on the wavelength of the irradiation light used in the exposure equipment. In addition to the above-mentioned azide compounds, it is also possible to use azide compounds used in known photosensitive compositions, and two or more of these may be used as a mixture.

In the present invention, the compound having an epoxy group when used as a negative resist is selected from, for example, the compounds shown below.

(I) Bisphenol A type epoxy/resin (2)
Brominated bisphenol A epoxy resin (3) Epoxy novolac resin (4) Epoxy talesol novolac resin (5)
Brominated Epoxy Novolak Resin (6) Polyglycol type epoxy resin When dry etching resistance is required, it is desirable to select a compound containing a benzene ring. Furthermore, two or more of these compounds may be used in combination.

In the present invention, typical polyolefin sulfone compounds used as positive resists include:
For example, poly(2-methylpentene-1 sulfone) can be mentioned. However, known polyolefin sulfone compounds used in photosensitive compositions may also be used, or two or more of these compounds may be used as a mixture.

In the present invention, when used as a positive photoresist, the weight ratio of the silicon compound having a phenolic hydroxyl group represented by the general formula +11, the quinone diazide compound, and the phenol resin is 0.1 to 2:0.
The ratio by weight is preferably 0.2-1:0.1-0.5:It'.

In the present invention, when used as a negative resist,
The weight ratio of the silicon compound having a phenolic hydroxyl group represented by the general formula (Il), the azide compound, and the phenol resin is preferably 0.1 to 2:0.02 to 1:1, and 02 to ]:0.1-05:l is more preferable.

In the present invention, when used as a negative resist,
The weight ratio of a silicon compound having a phenolic hydroxyl group represented by the general formula (Il, an azide compound, a compound having an epoxy group, and a phenol resin) is 01 to
2:0.02-1:0.05-1:1 is preferable, and 02-1:01-0.5:
More preferably, it is 0.1 to 1;

In the present invention, when used as a positive resist,
The weight ratio of the silicon compound having a phenolic hydroxyl group represented by the general formula (I), the polyolefinosulfone, and the phenol resin is O1~2: 0.05~
The range is preferably 0.35:1, and more preferably 0.2-]:O,1-02:1.

An advantage of using the radiation-sensitive composition of the invention is high resolution. Negative-tone photoresists in the prior art swell during development due to the use of crosslinking reactions. This phenomenon is considered to be the main cause of low resolution. All of the resist films according to the present invention contain phenolic resin and can be treated with an alkaline aqueous solution, and no swelling phenomenon is observed. In the resist process where a silicon compound is added as in the present invention, it is essential that the silicon compound does not swell during development.
It is conceivable that the resistance to In addition, in the positive photoresist currently used in semiconductor manufacturing,
It is a highly practical resist process that is sufficiently effective just by adding the silicon compound represented by the general formula +11 of the present invention. Furthermore, in the conventional two-layer structure process using a silicon-containing polymer, there was a problem that the resist swelled during development because it was a cross-linked resist that was not sensitive to visible light, but this invention solves this problem. be able to.

Next, in the two-layer structure process using the radiation-sensitive composition according to the present invention, a photosensitive composition containing a silicon compound containing a phenolic hydroxyl group represented by the general formula fI) and a phenol resin is used in the two-layer structure process. This pattern forming method is characterized in that it is used as an upper layer resist.

In the two-layer structure process according to the present invention, an organic layer is first formed on a substrate by spin coating using a spinner to a thickness sufficient to cover the steps. Next, a radiation-sensitive composition containing a silicon compound having a phenolic hydroxyl group represented by the general formula 11+ and a phenol resin is spin-coated using a spinner to form an upper resist film. This upper resist film is irradiated with radiation having a desired pattern,
Develop to form desired pattern. Containing this Noricon; using the threatening pattern as a mask, Ri containing oxygen
This is a process of etching and etching the underlying organic layer using E to transfer a pattern. The organic material directly coated on the substrate and used as the lower layer may be any organic polymeric material as long as it can be removed by RIE containing oxygen. For example, styrene polymers such as polystyrene, poly-4-chlorostyrene, poly-4-bromostyrene, polyvinylbenzyl chloride, polyimide polymers such as PIQ (trade name of Hitachi Chemical Co., Ltd.), polymethyl methacrylate, and Acrylic polymers such as glycidyl methacrylate, polyacrylic ethyl ester, and 2-chloroethyl polyacrylate; phenol resins such as polyvinylphenol and phenol novola-tsuku; rubber polymers such as cyclized polyisoprene rubber and polybutanene; Examples include molecules. Further, even known photosensitive compositions containing these can be applied as long as they can be removed by RIE containing oxygen.

Other requirements for the lower resist are that there is no mixing of the upper and lower layers when the upper resist is applied, that the silicon compound does not diffuse into the lower layer, that it is insoluble in the developer of the upper resist, and that the substrate It is resistant to dry etching, etc.

[Embodiments of the invention]

An example of the present invention will be given below and will be described in more detail. The silicon compounds having a phenolic hydroxyl group represented by the general formula (Il) used here were each prepared by a chemical synthesis method.

(Example 1) Commercially available positive photoresist product name 0FPR-800 (
20 centipoise solution 1 (manufactured by Tokyo Ohka Kogyo Co., Ltd.)
00 parts by weight, 12.5 parts by weight of 2,4-bis(trimethylsilyl)phenol, which is a silicon compound represented by the general formula (I) of the present invention, was added to prepare an upper layer resist solution.

First, a 20 centipoise solution of 0FPR-800 was applied onto a silicon wafer using a spinner, and then 20 centipoise was applied at 200°C.
The mixture was incubated for a minute to form a lower layer film with a thickness of 1.0 μm. Next, the above upper layer resist solution was applied using a spinner onto the silicon wafer on which the 0FPR-800 lower layer film had been formed, and was betatized in air at 80°C for 20 minutes to form a film with a thickness of 0.9 μm.
A two-layer resist film was formed and used as an exposed sample. Using light from a 600W Xe-Hg lamp,
After irradiating for 2 seconds through the test pattern mask, the NM
The upper resist film was developed by immersing it in D-3 (organic alkaline developer for positive photoresists manufactured by Tokyo Ohka Kogyo Co., Ltd.) for 20 seconds to obtain a positive pattern containing the silicon compound. Using this upper layer resist as a protective film, oxygen RIE (oxygen pressure: 2 x 1O-3 to
rr, oxygen flow rate: 10 SCCm, RF frequency:
13.56 MHz, supply cylinder cuff 50W, bias voltage: -500V, RF power supply time 14 minutes). When the sample was removed and examined under a microscope, the lower layer that was not covered by the upper layer that formed the test pattern was completely removed.

The film thickness of the portion covered by the upper layer on which the test pattern was formed was 1.6 μm or more, and a pattern with a film thickness that faithfully reflected the upper layer pattern could be formed.

(Example 2) Using m-)limethylsilylphenol as the solicon compound having a phenolic hydroxyl group represented by the general formula (I1), the other conditions were the same as in Example 1.
The film thickness of the portion covered by the upper layer on which the test pattern was formed was 12 μm or more, and it was possible to form a pattern that faithfully reflected the upper layer pattern.

(Example 3) As a silicon compound represented by the general formula (Il), 3-
When a test pattern was formed using (0-hydroxyphenoquineprobyl)-trimethylsilane under the same conditions as in Example 1, the upper layer pattern was faithfully reflected.
It was possible to form a pattern with a film thickness of 15 μm or more.

(Example 4) A 20 centipoise solution of OFPR-800 was applied onto a silicon wafer using a spinner, and then baked at 200° C. for 20 minutes to form a lower layer film with a thickness of 1.0 μm. Next, a commercially available negative-type deep ultraviolet photoresist (trade name: Raycast RD)
To 100 parts by weight of a 24 centistoke solution of 200ON (manufactured by Hitachi Chemical Co., Ltd.), 13 parts by weight of 2,4-bis(trimethylsilyl)phenol was added,
This was used as a resist solution. This resist solution was applied with a spinner onto the silicon compound on which the lower layer film was formed, and baked in air at 80°C for 20 minutes to a thickness of 09 μm.
An upper layer film was formed and used as an exposed sample. 6 for this exposed sample
Using light from a 00 W Xe-Hg lamp, the upper resist was irradiated for 5 seconds through a test baton mask, and then immersed in a 0.95 weight percent aqueous solution of tetramethylammonium hydroxide as a developer for 30 seconds. The film was developed to obtain a negative pattern containing a silicon compound. Using this upper layer resist as a protective film, transfer was performed by oxygen RIE under the same conditions as in Example 1, resulting in the formation of a pattern that faithfully reflected the upper layer pattern and had a film thickness of 1.6 μm or more.

(Example 5) As a silicon compound represented by the general formula +11, m-
When the same conditions as in Example 4 were used except that trimethylsilylphenol was used, it was possible to form an NO turn with a film thickness of 1.2 μm or more that faithfully reflected the z6 turn in the upper layer.

(Example 6) As a silicon compound represented by general formula (I), 3-
The same conditions as in Example 4 were used except that (0-hydoxyphenoquinepropyl)-trimethylsilane was used. It was possible to form a pattern that faithfully reflected the upper layer pattern and had a film thickness of 15 μm or more.

(Example 7) A 20 centipoise solution of OFPR-800 was
After coating with a spinner on a condensed wafer, it was heated to 200°C for 20
It was baked for 1 minute to form a lower layer film with a thickness of 10 μm. Next was a commercially available positive type electron beam resist (trade name: Reiki-t).

For 100 parts by weight of a 16 centistoke solution of STRE 5000P (manufactured by Hitachi Chemical Co., Ltd.), 2
゜4bis(trimethylsilyl)phenolwo7ffl
It part was added to prepare a resist solution. This resist solution was applied with a spinner to the silicon wafer 1- on which the lower layer film was formed, and baked in air at 100° C. for 20 minutes to form an upper layer film with a thickness of 09 μm, which was used as an electron beam irradiation sample. This sample was subjected to electron beam irradiation in a test pattern using an electron beam exposure device at an acceleration voltage of 3 QKV and an electron beam irradiation amount of 4 x 10-6 corons/cm2, and then exposed to tetramethyl hydroxide. Ammonium2.
By immersing it in a 5 weight percent aqueous solution as a developer for 40 seconds, the layered resist film was developed to obtain a positive pattern containing a silicon compound. Using this upper resist as a protective film, RIE with oxygen was carried out under the same conditions as in Example 1.
As a result of the transfer, the film thickness is over 16/1 m.
] It was possible to form a pattern that faithfully reflected the layer pattern.

(Example 8) As a silicon compound represented by the general formula +1+, m-
) A resist pattern was formed under the same conditions as in Example 7 except that IJ methylsolylphenol was used, and as a result, the film thickness was 1
A pattern of 2 μm or more that faithfully reflected the upper layer pattern could be formed.

(Example 9) - As a silicon compound represented by the general formula (I1, 3-
The same conditions as in Example 7 were used except that (0-hydroxyphenoxyprobyl)-trimethylsilane was used. This also has a film thickness of 1.5μ, which faithfully reflects the upper layer pattern.
It was possible to form a pattern of m or more.

(Example 10) A 20 centipoise solution of OFPR-800 was applied to a silicon wafer using a spinner, and then incubated at 200° C. for 20 minutes to form a lower layer film with a thickness of 1.0 μm. Next, Maruzen resin (polyvinylphenol, Maruzen Sekiyu Co., Ltd. trade name, weight average molecular weight 3000), DEN-431 (
Dow Evoquin Novolac resin), 3,3'-diaditone phenylsulfo/2,4-bis(trimethylsilyl)phenol in a mixing ratio of 100:33:20 near 0 by weight. It was used as a resist liquid. This resist solution was applied with a spinner onto the silicon wafer on which the lower layer film had been formed, and baked in air at 80° C. for 20 minutes to form an upper layer film with a thickness of 1.0 μm, which was used as an electron beam irradiation sample.

This sample was exposed to an accelerating voltage of 30K using an electron beam exposure device.
V, after performing electron beam irradiation of the test pattern at an electron beam irradiation dose of 1 x 10-5 electrons/cm2,
-L
The layered resist film was developed to obtain a negative pattern containing the recon compound.

When this upper layer resist was used as a protective film and was transferred by oxygen RIE under the same conditions as in Example 1, the film thickness was 17 μm.
It was possible to form a pattern that faithfully reflected the upper layer pattern and had a length of more than m.

(Example 11) As a silicon compound represented by general formula (I), m-
A resist pattern was formed using trimethylsilylphenol under the same conditions as in Example 10 except that trimethylsilylphenol was used.

In this case as well, it was possible to form a pattern that faithfully reflected the upper layer pattern and had a film thickness of 1.3 μm or more.

(Example 12) As a silicon compound represented by the general formula tll, 3-
When a resist pattern was formed under the same conditions as in Example 10 except that (0-hydroxyphenoxypropyl)trimethylsilane was used, a pattern that faithfully reflected the upper layer pattern was formed with a film thickness of 1.6 μm or more. was completed.

〔Effect of the invention〕

As explained in detail above, the resist film formed by the radiation-sensitive composition according to the present invention can be formed by irradiation with radiation including visible light such as ultraviolet light, electron beam, ion beam, and The film has high resolution and is highly resistant to oxygen RIEI, making it particularly suitable for microfabrication of substrates with steps.

The two-layer resist process according to the present invention can simplify the resist pattern formation process compared to the conventional three-layer resist process, and has great practical value.

Claims (1)

[Scope of Claims] 1. A radiation-sensitive composition characterized by containing a silicon compound having a phenolic hydroxyl group and a phenol resin represented by the following general formula (I). ▲There are mathematical formulas, chemical formulas, tables, etc.▼・・・・・・・・・
・・・・・・・・・(I) [In the formula, R_1 is Si(CH_3
), OSi(CH_3)_3, and O(CH_2)nS
i(CH_3)_3 (n>1) represents a substituent selected from the group consisting of R_2, R_3, R_4 and R_5
are Si(CH_3)_3, OSi(CH_3)_3, O
(CH_2)nSi(CH_3)_3(n>1), hydrogen, halogen, hydroxy group, alkyl group, nitro group, alkylamino group, acyl group, dialkylamino group, alkoxy group, sulfonic acid, sulfonic acid ester, carboxylic acid and esters of carboxylic acids. 2. The composition of the radiation-sensitive composition is selected from the group consisting of a silicon compound having a phenolic hydroxyl group represented by the general formula (I), a phenol resin, and a quinone diazide compound, an azide compound, a compound having an epoxy group, and a polyolefin sulfone. The radiation-sensitive composition according to claim 1, which contains one or more selected compounds. 3. The composition range of the radiation-sensitive composition is such that the weight ratio of the silicon compound having a phenolic hydroxyl group represented by the general formula (I) to 1 part of the phenolic resin is 0.1 to 2 parts,
Quinonediazide compound: 0.05-1, azide compound: 0.02-1, compound having an epoxy group: 0.05-1
1. The radiation-sensitive composition according to claim 2, wherein the polyolefin sulfone content is in the range of 0.05 to 0.35. 4. The composition range of the radiation-sensitive composition is such that the weight ratio of the silicon compound having a phenolic hydroxyl group represented by the general formula (I) to 1 of the phenolic resin is 0.2 to 1.
, 0.1 to 0.5 for the quinonediazide compound, 0.1 to 0.5 for the azide compound, and 0.5 for the compound having an epoxy group.
1 to 1, and the polyolefin sulfone content is in the range of 0.1 to 0.2. 5. Oxygen reactive ion etching (
A lower resist made of an organic polymeric material removable by RIE) is formed, and a radiation-sensitive resin containing a silicon compound having a phenolic hydroxyl group represented by the following general formula (I) and a phenolic resin is placed on the upper part of the lower resist. The method is characterized in that an upper layer resist is formed using a chemical composition, a desired pattern is made to appear on the upper layer resist and this is used as a mask, and the pattern of the upper layer resist is transferred to the lower layer resist by the oxygen RIE. Pattern formation method using two-layer resist. ▲There are mathematical formulas, chemical formulas, tables, etc.▼・・・・・・・・・
・・・・・・(I) [In the formula, R_1 is Si(CH_3)
_3, OSi(CH_3)_3, and O(CH_2)n
represents a substituent selected from the group consisting of Si(CH_3)_3 (n>1), R_2, R_3, R_4 and R_
5 is Si(CH_3)_3, OSi(CH_3)_3,
O(CH_2)nSi(CH_3)_3 (n>1), hydrogen, halogen, hydroxy group, alkyl group, nitro group,
Represents a substituent selected from the group consisting of an alkylamino group, an acyl group, a dialkylamino group, an alkoxy group, a sulfonic acid sulfonic acid ester, a carboxylic acid, and an ester of a carboxylic acid. ] 6. The process of revealing a desired pattern on the upper resist layer is by forming a coating film using a radiation-sensitive composition and irradiating the coating film of the radiation-sensitive composition with radiation having a desired pattern. Claim 5, characterized in that the method comprises a process of causing a difference in the solubility of a developer between a portion irradiated with radiation and a portion not irradiated with radiation, and causing a desired pattern to appear on the upper resist layer using the developer. Pattern formation method described in section. 7. The composition of the radiation-sensitive composition is selected from the group of a silicon compound having a phenolic hydroxyl group represented by the general formula (I), a phenol resin, a quinone diazide compound, an azide compound, a compound having an epoxy group, and a polyolefin sulfone. 7. The pattern forming method according to claim 5 or 6, characterized in that the pattern forming method contains one or more kinds of compounds.