JPS61294746A - Scanning type electron microscope - Google Patents
Scanning type electron microscopeInfo
- Publication number
- JPS61294746A JPS61294746A JP13600485A JP13600485A JPS61294746A JP S61294746 A JPS61294746 A JP S61294746A JP 13600485 A JP13600485 A JP 13600485A JP 13600485 A JP13600485 A JP 13600485A JP S61294746 A JPS61294746 A JP S61294746A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- lens
- electron
- objective lens
- electron gun
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、走査型電子顕微鏡(SEM)に係り、特に超
高分解能二次電子像w4察に好適な電子光学系に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a scanning electron microscope (SEM), and particularly to an electron optical system suitable for ultra-high resolution secondary electron image w4 observation.
従来の二次電子像分解能は20人が最高であり、その電
子光学系は文献(走査型電子顕微鏡の基礎と応用;共立
出版・、昭和58年12月、ページ14、図2.7 (
b))に記載のように、第1図た一次電子線8は加速レ
ンズ2.コンデンサレンズ3.対物レンズ4により約2
0人の電子線径に絞られて試料5に照射される。試料5
で励起された二次電子9は検出器6により検出される。Conventional secondary electron image resolution is highest at 20 people, and its electron optical system is described in the literature (Basics and Applications of Scanning Electron Microscopes; Kyoritsu Shuppan, December 1980, page 14, Figure 2.7)
As described in b)), the primary electron beam 8 shown in FIG. Condenser lens 3. Approximately 2 depending on objective lens 4
The sample 5 is irradiated with the electron beam diameter narrowed to zero. Sample 5
The secondary electrons 9 excited are detected by the detector 6.
電子線8は偏向器7により試料9上を二次元的に走査
”される。The electron beam 8 is scanned two-dimensionally over the sample 9 by the deflector 7
“It will be done.
一方近年、前記文献の2429図3,12のように試料
5を対物レンズ4の内部に挿入し、短焦点、低収差化を
はかり、電子線径を15人に絞つった。On the other hand, in recent years, as shown in FIGS. 3 and 12 of the above-mentioned document, the sample 5 was inserted into the objective lens 4 to achieve a short focus and low aberration, and the diameter of the electron beam was narrowed down to 15.
第1図の場合は、対物レンズ4が長焦点なために収差が
大きく電子線8を細く絞れないという欠点があった。ま
た、第2図の場合は熱電子銃のために、電子線8のエネ
ルギーの広がりが大きく、色収差が大きくなってやはり
電子線8を細く絞れないという欠点があった。In the case of FIG. 1, since the objective lens 4 has a long focal point, the aberration is large and the electron beam 8 cannot be narrowed down. Furthermore, in the case of FIG. 2, because of the thermionic electron gun, the energy of the electron beam 8 spreads widely and chromatic aberration increases, which also has the disadvantage that the electron beam 8 cannot be narrowed down.
従って本発明の目的は、電子線径を従来以上に細く絞り
、二次電子を高効率で検出できる電子光学系を備えた走
査型電子顕微鏡を提供することにある。Therefore, an object of the present invention is to provide a scanning electron microscope equipped with an electron optical system that can narrow down the electron beam diameter to a smaller diameter than before and detect secondary electrons with high efficiency.
上記目的を達成するために本発明においては、電子銃と
して電界放射型電子銃を用い、試料を対物レンズの内部
に配置し、二次電子検出器を対物レンズに接近して電子
銃側に配置して走査型電子顕微鏡を構成したことを特徴
としている。つまり、本発明は下記の考え方を基礎にし
てなされたものである。In order to achieve the above object, in the present invention, a field emission type electron gun is used as the electron gun, the sample is placed inside the objective lens, and the secondary electron detector is placed close to the objective lens on the electron gun side. The feature is that a scanning electron microscope is constructed using the following methods. That is, the present invention was made based on the following idea.
すなわち、電子線を出来る限り細く絞るためには、エネ
ルギーの広がりが小さな電子銃と低収差なレンズ系を用
いればよい、また、二次電子の検出効率を上げるために
は、二次電子の通路に遮蔽物を配置しないような構成と
すればよい。In other words, in order to focus the electron beam as narrowly as possible, it is sufficient to use an electron gun with a small energy spread and a lens system with low aberration.In addition, in order to increase the detection efficiency of secondary electrons, it is necessary to The configuration may be such that no shielding object is placed in the area.
以下、本発明の一実施例を第3図により説明する。電子
銃1は電子線8のエネルギーの広がりの小さなFE電子
銃を用い、低収差化をはかるために試料5は対物レンズ
4の内部に配置されている。An embodiment of the present invention will be described below with reference to FIG. The electron gun 1 is an FE electron gun in which the energy spread of the electron beam 8 is small, and the sample 5 is placed inside the objective lens 4 in order to reduce aberrations.
また、二次電子9の高検出効率化をはかるために、検出
器6は対物レンズ4に接近して配置する。そのために対
物レンズ4のレンズコイル41は、試料5に対して検出
器6と反対側に配置している。Furthermore, in order to improve the efficiency of detecting the secondary electrons 9, the detector 6 is placed close to the objective lens 4. For this purpose, the lens coil 41 of the objective lens 4 is arranged on the opposite side of the detector 6 with respect to the sample 5.
以上の構成以外は従来と同一であり、動作原理も従来と
同一である。The configuration other than the above is the same as the conventional one, and the operating principle is also the same as the conventional one.
次に、上記対物レンズ4の磁極形状について、収差と二
次電子9の高検出効率化との観点より、その実用的な形
状について述べる。そのために。Next, the practical shape of the magnetic pole of the objective lens 4 will be described from the viewpoint of aberrations and high detection efficiency of the secondary electrons 9. for that.
対物レンズ4の磁極部分を拡大した一例を第4図に、そ
してそのレンズ磁場と2次電子の回転半径の一例を第5
図に示す、また、磁極形状によるレンズ特性を第6〜8
図に示す。Figure 4 shows an example of an enlarged view of the magnetic pole portion of the objective lens 4, and Figure 5 shows an example of the lens magnetic field and the radius of rotation of secondary electrons.
In addition, the lens characteristics according to the magnetic pole shape are shown in the 6th to 8th figures.
As shown in the figure.
一般に、試料51を保持する試料台52は幅51以上を
要す、二次電子像のamでは少なくとも30°以上の傾
斜角を可能にしたいので、磁極42.43のギャップS
は3m以上は必要となる。Generally, the sample stage 52 that holds the sample 51 needs to have a width of 51 or more, and since it is desired to enable an inclination angle of at least 30° in the am of the secondary electron image, the gap S between the magnetic poles 42 and 43 is required.
3m or more is required.
一方、試料51で励起された二次電子が磁極42゜43
に衝突されにくくするためには、第1磁極42の穴径b
1と第2磁極43の穴径b2にはbt>btの方がよい
、このような条件のもとに計算機シミュレーションで球
面収差係数Ca9色収色収差係数C用使用励磁/〜r−
等をもとめ第6〜8図に示した。ここで、工はレンズコ
イル電流。On the other hand, the secondary electrons excited in the sample 51 are at the magnetic poles 42°43
In order to make it difficult to collide with
It is better that bt>bt for the hole diameter b2 of the first and second magnetic poles 43. Under these conditions, a computer simulation was performed to obtain the excitation used for the spherical aberration coefficient Ca9 and the chromatic aberration coefficient C.
etc., and are shown in Figures 6-8. Here, engineering is the lens coil current.
Nはレンズコイルの巻き数、Eは加速電圧である。N is the number of turns of the lens coil, and E is the acceleration voltage.
第6〜8図は、試料51をレンズ中心に配設し、b、と
b2をbx>bzの条件のもとに変化させて。In FIGS. 6 to 8, the sample 51 is placed at the center of the lens, and b and b2 are varied under the condition of bx>bz.
(b1+b、)/2で規格化したときの平均値で糸しで
ある。これらの特性図より、実用性も考慮し用いれば、
C’<3園、C’<3mmとなるような対物レンズ4を
作ることが可能となる。このようなと
対物レンズ4を用いれば、加速電圧Effi20KVで
電子線8を数Å以下に絞ることができ、極めて高い分解
能を有す、る2次電子像が得られる。This is the average value when normalized by (b1+b,)/2. From these characteristic diagrams, if you consider practicality and use it,
It becomes possible to manufacture the objective lens 4 such that C'<3 mm and C'<3 mm. If such an objective lens 4 is used, the electron beam 8 can be narrowed down to several angstroms or less with an accelerating voltage Effi of 20 KV, and a secondary electron image with extremely high resolution can be obtained.
ここで、代表的な対物レンズ(S==8国、b1==8
mm、 b2=2no)、加速電圧20Kvに対する軸
上磁場分布12とr=□(ここでrは二次電子の回転半
径9mは電子の質量、eは電子の電荷、■は2次電子エ
ネルギー、Bはレンズ磁場を示す)式による二次電子9
の回転半径(r)13を第第5図に示す。磁極42がこ
の回転半径13より軸外にあれば二次電子9は磁極42
に衝突す二次電子9は広がっておらず、検出器6の方に
引き寄せられる。従って実用的には、磁極42の開き角
θは30″以上あれば特に問題はない、このような磁極
42では高効率な二次電子検出が可能となる。Here, a typical objective lens (S==8 countries, b1==8
mm, b2 = 2no), on-axis magnetic field distribution 12 for acceleration voltage 20Kv and r = □ (where r is the radius of rotation of the secondary electron 9 m is the mass of the electron, e is the charge of the electron, ■ is the secondary electron energy, B indicates the lens magnetic field) Secondary electrons according to the formula 9
The radius of rotation (r) 13 of is shown in FIG. If the magnetic pole 42 is located off-axis with respect to the rotation radius 13, the secondary electrons 9 will move to the magnetic pole 42.
The secondary electrons 9 colliding with the detector 6 do not spread out, but are drawn toward the detector 6. Therefore, in practice, there is no particular problem as long as the opening angle θ of the magnetic pole 42 is 30'' or more, and such a magnetic pole 42 allows highly efficient secondary electron detection.
第5〜8図は、試料51を対物レンズ4中心に配置した
ものに対して示したが、対物レンズ4中にあれば上記し
た条件で低収差、高検出効率なレンズであることが計算
機シミュレーションで分かつている。従って、試料5は
対物レンズ4中にあればよい。5 to 8 are shown with the sample 51 placed at the center of the objective lens 4, but computer simulations show that if the sample 51 is placed in the objective lens 4, it is a lens with low aberrations and high detection efficiency under the above conditions. I understand that. Therefore, the sample 5 only needs to be placed inside the objective lens 4.
本発明によれば、電子線エネルギーの広がりが小さく、
かつ低収差なレンズが実現できるので。According to the present invention, the spread of electron beam energy is small;
This also makes it possible to create a lens with low aberrations.
極めて細く電子線を絞ることができ1.走査型電子顕微
鏡の分解能を向上できる効果がある。The electron beam can be focused extremely thinly.1. This has the effect of improving the resolution of scanning electron microscopes.
また、二次電子の検出効率を高めることができるので、
S/N改善2画質向上の効果がある。In addition, the detection efficiency of secondary electrons can be increased, so
S/N improvement 2 This has the effect of improving image quality.
第1,2図は、従来のSEMの電子光学系の基本構成を
示した図、第3図は1本発明のSEMの電子光学系の基
本構成を示した図、第4図は、本発明の対物レンズ磁極
形状を示す図、第5図はレンズ磁極に対するレンズ磁場
と二次電子の回転半径を示す図、第6〜8図は、本発明
のレンズ特性を示すもので、それぞれ球面2色収差係数
、レンズ励磁の特性を示す図である。
1・・・電界放射型電子銃、2・・・加速レンズ、3・
・・コンデンサレンズ、4・・・対物レンズ、5・・・
試料、6・・・検出器、7・・・偏向器、8・・・−吹
型子線、9・・・二次電子、11・・・熱電子銃、12
・・・レンズ磁場、13・・・二次電子の回転半径、4
1・・・レンズコイル、42・・・第一磁極、43・・
・第二磁極、51・・・試料、菖 1 図
石2 図
夏 3 図
遁 4 図
fJ 7 図
2 と塾飢ノ
百 3 図1 and 2 are diagrams showing the basic configuration of the electron optical system of a conventional SEM, FIG. 3 is a diagram showing the basic configuration of the electron optical system of the SEM of the present invention, and FIG. Figure 5 is a diagram showing the lens magnetic field and radius of rotation of secondary electrons relative to the lens magnetic pole, and Figures 6 to 8 are diagrams showing the lens characteristics of the present invention, including spherical dichromatic aberration, respectively. FIG. 3 is a diagram showing characteristics of coefficients and lens excitation. 1... Field emission type electron gun, 2... Accelerating lens, 3...
...Condenser lens, 4...Objective lens, 5...
Sample, 6...Detector, 7...Deflector, 8...-Blow mold beam, 9...Secondary electron, 11...Thermionic gun, 12
... Lens magnetic field, 13 ... Rotation radius of secondary electron, 4
1... Lens coil, 42... First magnetic pole, 43...
・Second magnetic pole, 51...sample, irises 1 Figure
Stone 2 Figure Summer 3 Figure Release 4 Figure fJ 7 Figure 2 and Jukuki no Hyaku 3 Figure
Claims (1)
二次元的に走査し、上記試料内で励起された二次電子を
検出してブラウン管上に表示する走査型電子顕微鏡にお
いて、上記電子銃として電界放射型電子銃を用い、上記
試料は対物レンズの内部に配置し、上記試料から出てく
る二次電子を検出する検出器は上記対物レンズに接近し
て上記電子銃側に配置してなることを特徴とする走査型
電子顕微鏡。 2、上記対物レンズは、そのレンズコイルが上記試料に
対して上記検出器とは逆側になるように配置され、レン
ズ磁路の磁極形状がギャップSを3mm≦S≦12mm
、上記電子銃側の第1磁極径b_1と上記レンズコイル
側の磁極径b_2に対してb_1>b_2、2mm≦(
b_1+b_2)/2≦16mm、上記第1磁極の半開
口角θ_1をθ_1≧30°とされてなることを特徴と
する第1項記載の走査型電子顕微鏡。[Claims] 1. A scanning type in which an electron beam taken out from an electron gun and narrowed down is scanned two-dimensionally over a sample, and secondary electrons excited within the sample are detected and displayed on a cathode ray tube. In the electron microscope, a field emission electron gun is used as the electron gun, the sample is placed inside an objective lens, and a detector for detecting secondary electrons coming out of the sample is placed close to the objective lens. A scanning electron microscope characterized by being placed on the electron gun side. 2. The objective lens is arranged such that its lens coil is on the opposite side of the sample from the detector, and the magnetic pole shape of the lens magnetic path has a gap S of 3 mm≦S≦12 mm.
, with respect to the first magnetic pole diameter b_1 on the electron gun side and the magnetic pole diameter b_2 on the lens coil side, b_1>b_2, 2mm≦(
2. The scanning electron microscope according to claim 1, wherein b_1+b_2)/2≦16 mm, and the half-opening angle θ_1 of the first magnetic pole is θ_1≧30°.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60136004A JP2533478B2 (en) | 1985-06-24 | 1985-06-24 | Scanning electron microscope |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60136004A JP2533478B2 (en) | 1985-06-24 | 1985-06-24 | Scanning electron microscope |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61294746A true JPS61294746A (en) | 1986-12-25 |
JP2533478B2 JP2533478B2 (en) | 1996-09-11 |
Family
ID=15164937
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60136004A Expired - Lifetime JP2533478B2 (en) | 1985-06-24 | 1985-06-24 | Scanning electron microscope |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2533478B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109585245A (en) * | 2015-01-30 | 2019-04-05 | 松定精度株式会社 | Charged particle line apparatus and scanning electron microscope |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51136278A (en) * | 1975-05-21 | 1976-11-25 | Hitachi Ltd | Non-spot aberration compensator for electron microscope having electri c field radiation gun |
JPS5423465A (en) * | 1977-07-25 | 1979-02-22 | Jeol Ltd | Electronic microscope |
JPS5670965U (en) * | 1980-11-06 | 1981-06-11 | ||
JPS5780645A (en) * | 1980-11-06 | 1982-05-20 | Jeol Ltd | Magnetic field type objective lens |
-
1985
- 1985-06-24 JP JP60136004A patent/JP2533478B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51136278A (en) * | 1975-05-21 | 1976-11-25 | Hitachi Ltd | Non-spot aberration compensator for electron microscope having electri c field radiation gun |
JPS5423465A (en) * | 1977-07-25 | 1979-02-22 | Jeol Ltd | Electronic microscope |
JPS5670965U (en) * | 1980-11-06 | 1981-06-11 | ||
JPS5780645A (en) * | 1980-11-06 | 1982-05-20 | Jeol Ltd | Magnetic field type objective lens |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109585245A (en) * | 2015-01-30 | 2019-04-05 | 松定精度株式会社 | Charged particle line apparatus and scanning electron microscope |
CN109585245B (en) * | 2015-01-30 | 2021-03-23 | 松定精度株式会社 | Charged particle beam device and scanning electron microscope |
Also Published As
Publication number | Publication date |
---|---|
JP2533478B2 (en) | 1996-09-11 |
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