JPS6129150B2 - - Google Patents

Info

Publication number
JPS6129150B2
JPS6129150B2 JP55039408A JP3940880A JPS6129150B2 JP S6129150 B2 JPS6129150 B2 JP S6129150B2 JP 55039408 A JP55039408 A JP 55039408A JP 3940880 A JP3940880 A JP 3940880A JP S6129150 B2 JPS6129150 B2 JP S6129150B2
Authority
JP
Japan
Prior art keywords
layer
terminal
collector
epitaxial layer
load resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55039408A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56135961A (en
Inventor
Masatoshi Sekine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO ERU ESU AI GIJUTSU KENKYU KUMIAI filed Critical CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority to JP3940880A priority Critical patent/JPS56135961A/ja
Publication of JPS56135961A publication Critical patent/JPS56135961A/ja
Publication of JPS6129150B2 publication Critical patent/JPS6129150B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Static Random-Access Memory (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Memories (AREA)
JP3940880A 1980-03-27 1980-03-27 Semiconductor memory device Granted JPS56135961A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3940880A JPS56135961A (en) 1980-03-27 1980-03-27 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3940880A JPS56135961A (en) 1980-03-27 1980-03-27 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS56135961A JPS56135961A (en) 1981-10-23
JPS6129150B2 true JPS6129150B2 (en, 2012) 1986-07-04

Family

ID=12552158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3940880A Granted JPS56135961A (en) 1980-03-27 1980-03-27 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS56135961A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0245809U (en, 2012) * 1988-09-27 1990-03-29

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0245809U (en, 2012) * 1988-09-27 1990-03-29

Also Published As

Publication number Publication date
JPS56135961A (en) 1981-10-23

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