JPS6128925A - Optical modulating device - Google Patents
Optical modulating deviceInfo
- Publication number
- JPS6128925A JPS6128925A JP15008584A JP15008584A JPS6128925A JP S6128925 A JPS6128925 A JP S6128925A JP 15008584 A JP15008584 A JP 15008584A JP 15008584 A JP15008584 A JP 15008584A JP S6128925 A JPS6128925 A JP S6128925A
- Authority
- JP
- Japan
- Prior art keywords
- axial direction
- substrate
- axial
- temperature
- coefficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は、光変調装置に関するものであって、詳しくは
、先導波路を通過する光を強度変調するように構成され
たニオブ酸リチウム(LiNbOl)基板を用いた光変
調装置の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an optical modulation device, and more particularly, a lithium niobate (LiNbOl) substrate configured to intensity-modulate light passing through a guiding waveguide. This paper relates to improvements to the optical modulation device used.
ニオブ酸リチウム(LjNbO0)のような電気光学材
料よりなる基板にチタン(Ti)などの金属不純物を熱
拡散することにより基板よりも屈折率の高い光導波路が
形成され、電気光学効果の効率の極めて高い6光導波路
体が得られる。このような先導波路に電界を加えると、
光導波路を通過する光は電気光学効果により強度変調さ
れる。By thermally diffusing metal impurities such as titanium (Ti) into a substrate made of an electro-optic material such as lithium niobate (LjNbO0), an optical waveguide with a higher refractive index than the substrate is formed, making the electro-optic effect extremely efficient. A high 6 optical waveguide body can be obtained. When an electric field is applied to such a leading wavepath,
The light passing through the optical waveguide is intensity-modulated by the electro-optic effect.
このような光導波路体の一種に、第2図に示すような分
岐干渉形光導波路体がある。One type of such an optical waveguide body is a branching interference type optical waveguide body as shown in FIG.
第2図において、10は基板、20は分岐干渉形光導波
路、30は電極、40は信号源である。In FIG. 2, 10 is a substrate, 20 is a branched interference type optical waveguide, 30 is an electrode, and 40 is a signal source.
基板10は電気光学効果を有するニオブ酸リチウム(L
jNbO,)で構成されたものであり、第3図に示すよ
うにX、z軸が水平面となりY軸が垂直面となるように
カットされている。分岐干渉形光導波路20は基板10
にチタン(T1)のような金属不純物を熱拡散すること
により線状に形成され基板10よりも高い屈折率を有す
るものであり、Y字形の分岐部21.互い一平行な位相
推移Y$22及びY字形の結合部23がX軸方向に光を
通すようにして連続的に一体化されている。The substrate 10 is made of lithium niobate (L), which has an electro-optic effect.
As shown in FIG. 3, it is cut so that the X and Z axes are horizontal planes and the Y axis is a vertical plane. The branch interference type optical waveguide 20 is connected to the substrate 10
It is formed into a linear shape by thermally diffusing a metal impurity such as titanium (T1) into the substrate 10, and has a higher refractive index than the substrate 10, and has a Y-shaped branch portion 21. The mutually parallel phase shift Y$22 and the Y-shaped coupling portion 23 are continuously integrated so as to transmit light in the X-axis direction.
電極30は分岐干渉形光導波路20を通過する光を強度
変調するために分岐干渉形光導波路20に電界を・印加
するものであり、位相推移部22を挟むようにして第1
の電極31および第2の電極32が基板10上に設けら
れている。信号源40は電界を供給するものであり、第
1の電極31と第2の電極32との間に接続されている
。なお、分岐干渉形光導波路20の7字形の分岐部21
の端部にはレーザダイオードなどの光源からの光を伝送
するための光ファイバーが接続され、7字形の結合部2
3の端部には強度変調された光をフォトトランジスタな
どの受光素子に伝送するための光ファイバーが接続され
るが図示しない。The electrodes 30 apply an electric field to the branching interference type optical waveguide 20 in order to intensity-modulate the light passing through the branching interference type optical waveguide 20.
An electrode 31 and a second electrode 32 are provided on the substrate 10. The signal source 40 supplies an electric field and is connected between the first electrode 31 and the second electrode 32. Note that the figure 7-shaped branch portion 21 of the branch interference type optical waveguide 20
An optical fiber for transmitting light from a light source such as a laser diode is connected to the end of the figure-7 coupling part 2.
An optical fiber for transmitting intensity-modulated light to a light-receiving element such as a phototransistor is connected to the end of 3, but is not shown.
このような構成において、分岐干渉形光導波路20の7
字形の分岐部21の端部に光源からの光が加えらると、
光は分岐部21で2分割されて位相推移部22に伝送さ
れる。位相推移部22では2分割された光の間に電極3
0を介して加えられる信号[40の出力の大きさに応じ
た位相差が与えられる。そして、位相差を有するこれら
光は結合部23で再び結合される。これにより、結合部
23の端部から強度変調された光が送出されることにな
る。ここで、位相推移部22にλ/4の位相差を与えて
強度変調された光を受光素子に加えることにより電極3
0を介して加えられる信号源40の出力の大きさに応じ
た電気信号を得ることができる。In such a configuration, 7 of the branching interference type optical waveguide 20
When light from a light source is applied to the end of the branch part 21 of the letter,
The light is split into two by the branching section 21 and transmitted to the phase shifting section 22 . In the phase shift section 22, an electrode 3 is placed between the two divided lights.
A phase difference is given according to the magnitude of the output of the signal [40] applied through the signal [40]. Then, these lights having a phase difference are combined again at the coupling part 23. As a result, intensity-modulated light is sent out from the end of the coupling section 23. Here, by applying a phase difference of λ/4 to the phase shift section 22 and applying intensity-modulated light to the light receiving element, the electrode 3
It is possible to obtain an electrical signal depending on the magnitude of the output of the signal source 40 applied via the signal source 40.
このような構成において、基板10の特性に着目すると
、Z軸方向の屈折率Tlcは2.17となって2軸方向
の電気光学係数r、、は30X10−’5III/Vと
なることから高感度特性が得られるものの、2軸方向の
屈折率TIcの温度係数は−6,0X10−’/’0と
なって2軸方向の電気光学係数resの温度係数は4.
9×10−’/ ”Oになることから感度が温度変化に
応じて大きく変化するという欠点がある。In such a configuration, focusing on the characteristics of the substrate 10, the refractive index Tlc in the Z-axis direction is 2.17, and the electro-optic coefficient r, in the two-axis directions is 30X10-'5III/V, so it is high. Although sensitivity characteristics are obtained, the temperature coefficient of the refractive index TIc in the biaxial direction is -6.0X10-'/'0, and the temperature coefficient of the electro-optic coefficient res in the biaxial direction is 4.0.
9 x 10-'/''O, which has the disadvantage that the sensitivity changes greatly in response to temperature changes.
本発明は、このような従来の欠点を解決したものであり
、その目的は、温度変化による特性変化の小さな光変調
装置を提供することにある。The present invention solves these conventional drawbacks, and an object of the present invention is to provide an optical modulation device whose characteristics change little due to temperature changes.
このような目的を達成する本発明は、X、z軸が水平面
となりY軸が垂直面となるようにカットされたニオブ酷
リチウム(LiNbO,)よりなる基板の表面に、Z軸
方向に光を通すように分岐干渉形光導波路を設けたこと
を特徴とする。The present invention, which achieves these objectives, irradiates light in the Z-axis direction onto the surface of a substrate made of lithium niobium (LiNbO,) cut so that the X and Z axes are horizontal planes and the Y axis is a vertical plane. It is characterized in that a branching interference type optical waveguide is provided so as to pass through the optical waveguide.
以下、図面を用いて詳細に説明する。 Hereinafter, a detailed explanation will be given using the drawings.
第1図は本発明の一実施例を示す構成説明図であり、第
2図と同等部分には同一符号を付けている。第1図にお
いて、基板10としては第2図の装置と同様に第3図に
示すようにx、z軸が水平面となりY軸が垂直面となる
ようにカットされたニオブ酌リチウム(LiNbO,)
を用いるが、基板10の表面には分岐干渉形光導波路2
0を第2図の装置とは異なる2軸方向に光を通すように
して連続的に一体化する。FIG. 1 is a configuration explanatory diagram showing one embodiment of the present invention, and parts equivalent to those in FIG. 2 are given the same reference numerals. In FIG. 1, the substrate 10 is made of niobium-dipped lithium (LiNbO), which is cut so that the x and z axes are horizontal planes and the Y axis is a vertical plane, as shown in FIG.
However, on the surface of the substrate 10 there is a branched interference type optical waveguide 2.
0 is continuously integrated in such a way that light passes in two axial directions different from that of the device shown in FIG.
このような構成において、基板10の特性に着目すると
、X軸方向の屈折率noは2.25となってX軸方向の
電気光学係l#r @@は6〜8 XIO−”m/Vと
なることから第3図の装置よりは多少感度が低下するも
のの、X軸方向の屈折率noの温度係数は−1,4X1
0−”PCとなってX軸方向の電気光学係数r■の温度
係数はほぼ0になることから感度の温度変化による変動
を小さくすることができる。また、基板lOの表面に分
岐干渉形光導波路20を設けているので、結晶の方向性
の角度のずれに起因する特性の変動を差動出力をとるこ
とによって補償できる。In such a configuration, focusing on the characteristics of the substrate 10, the refractive index no in the X-axis direction is 2.25, and the electro-optic index l#r@@ in the X-axis direction is 6 to 8 XIO-''m/V. Therefore, although the sensitivity is somewhat lower than that of the device in Figure 3, the temperature coefficient of the refractive index no in the X-axis direction is -1.4X1
0-" PC, and the temperature coefficient of the electro-optic coefficient r in the Since the wave path 20 is provided, it is possible to compensate for variations in characteristics caused by angular deviations in crystal orientation by providing differential outputs.
このような構成によれば、例えば信号源の出力信号の大
きさを電気的に完全に絶縁した状態で測定できる光電圧
計が実現できるのをはじめ、光通信システムにおける各
種の光信号処理装置に用いることができる。According to such a configuration, for example, it is possible to realize an optical voltmeter that can measure the magnitude of the output signal of a signal source in a completely electrically isolated state, and it can also be used in various optical signal processing devices in optical communication systems. be able to.
〔発明の効果〕
これらから明らかなように、本発明によれば、温度変化
による特性変化の小さな光変調装置が実現できる。[Effects of the Invention] As is clear from the above, according to the present invention, an optical modulation device whose characteristics change little due to temperature changes can be realized.
第1図は本発明の一実施例を示す構成説明図、第2図は
従来の装置の一例を示す構成説明図、第3図は本発明で
用いる基板の結晶方位説明図である。
10・・・基板、20・・・先導波路、30・・・電極
、40・・・信号源。
第1図
第2図
第3図FIG. 1 is an explanatory diagram of the configuration of an embodiment of the present invention, FIG. 2 is an explanatory diagram of the configuration of an example of a conventional device, and FIG. 3 is an explanatory diagram of the crystal orientation of a substrate used in the present invention. DESCRIPTION OF SYMBOLS 10... Substrate, 20... Leading wave path, 30... Electrode, 40... Signal source. Figure 1 Figure 2 Figure 3
Claims (1)
トされたニオブ酸リチウム〔LiNbO_■〕よりなる
基板の表面に、Z軸方向に光を通すように分岐干渉形光
導波路を設けたことを特徴とする光変調装置。[Claims] Branching interference is applied to the surface of a substrate made of lithium niobate [LiNbO_■], which is cut so that the X and Z axes are horizontal planes and the Y axis is a vertical plane, so that light passes in the Z-axis direction. An optical modulation device characterized by being provided with a shaped optical waveguide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15008584A JPS6128925A (en) | 1984-07-19 | 1984-07-19 | Optical modulating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15008584A JPS6128925A (en) | 1984-07-19 | 1984-07-19 | Optical modulating device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6128925A true JPS6128925A (en) | 1986-02-08 |
Family
ID=15489182
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15008584A Pending JPS6128925A (en) | 1984-07-19 | 1984-07-19 | Optical modulating device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6128925A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63170728U (en) * | 1987-04-28 | 1988-11-07 | ||
JPH0324505A (en) * | 1989-06-21 | 1991-02-01 | Hitachi Metals Ltd | Lithium niobate optical element |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5891434A (en) * | 1981-11-26 | 1983-05-31 | Omron Tateisi Electronics Co | Light deflection element |
-
1984
- 1984-07-19 JP JP15008584A patent/JPS6128925A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5891434A (en) * | 1981-11-26 | 1983-05-31 | Omron Tateisi Electronics Co | Light deflection element |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63170728U (en) * | 1987-04-28 | 1988-11-07 | ||
JPH0324505A (en) * | 1989-06-21 | 1991-02-01 | Hitachi Metals Ltd | Lithium niobate optical element |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5015053A (en) | Reduction of modulator non-linearities with independent bias angle control | |
US7447389B2 (en) | Optical modulator | |
EP1918761A1 (en) | Light fsk/ssb modulator having intensity balance function | |
JPS6261123B2 (en) | ||
US4856094A (en) | Arrangement for polarization control, such as for an optical heterodyne or homodyne receiver | |
JPH0758375B2 (en) | Polarization independent photoelectron directional coupler | |
US4904038A (en) | Guided wave optical frequency shifter | |
US20180284352A1 (en) | Optical modulator | |
EP0165555B1 (en) | Method for modulating a carrier wave | |
CA2130825C (en) | Method and sensor for measuring electric voltages and/or electric field intensities | |
JPH0422246B2 (en) | ||
JPS6128925A (en) | Optical modulating device | |
CN206178309U (en) | Light modulator and light modulating system | |
CN214375657U (en) | Hybrid integrated photoelectric chip, optical modulator and fiber-optic gyroscope | |
JPS6147929A (en) | Photovoltage sensor | |
JP4793550B2 (en) | Optical carrier suppressed double sideband (DSB-SC) modulation system capable of high extinction ratio modulation | |
JPH019933Y2 (en) | ||
JPS60257325A (en) | Photovoltage sensor | |
JPH0354283B2 (en) | ||
JPS59197012A (en) | Optical modulator | |
JP2673485B2 (en) | Electric field detection method | |
EP0211113A1 (en) | Guided wave optical frequency shifter | |
JP2841863B2 (en) | Ring interferometer | |
JPH0422245B2 (en) | ||
CA1254642A (en) | Guided wave optical frequency shifter |