JPS61284819A - Magneto-resistance effect type reproducing head - Google Patents

Magneto-resistance effect type reproducing head

Info

Publication number
JPS61284819A
JPS61284819A JP12605285A JP12605285A JPS61284819A JP S61284819 A JPS61284819 A JP S61284819A JP 12605285 A JP12605285 A JP 12605285A JP 12605285 A JP12605285 A JP 12605285A JP S61284819 A JPS61284819 A JP S61284819A
Authority
JP
Japan
Prior art keywords
signal
circuit
bias
magneto
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12605285A
Other languages
Japanese (ja)
Inventor
Katsuyuki Tanaka
克之 田中
Norio Goto
典雄 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12605285A priority Critical patent/JPS61284819A/en
Publication of JPS61284819A publication Critical patent/JPS61284819A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a magneto-resistance effect type reproducing head preventing generation of a thermal noise, by making a sampling period of a sample holding circuit coincide with a period of a bias use high frequency current. CONSTITUTION:A high frequency current circuit is connected to a bias conductor, and also an output signal of a magneto-resistance effect element is divided into two, one is supplied to a differential amplifier 10, and the other is supplied to the differential amplifier 10 through a sample holding circuit 9. In this case, said signal is converted to a signal having an envelope by executing an operation by the sample holding circuit 9 and the differential circuit 10. By processing this signal by a detecting/rectifying circuit 11, an electric signal corresponding to an input magnetic field signal of an MR element 1 is obtained in an output terminal 12.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、バイアス磁界を印加するようにした磁気抵抗
効果型再生ヘッドに関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a magnetoresistive read head to which a bias magnetic field is applied.

〔発明の背景〕[Background of the invention]

従来、磁気抵抗効果素子をリニアリティ良く用いるため
に、磁気抵抗素子に近接して設けた導体すなわち、バイ
アス導体に電流を流すことにより、磁気抵抗効果素子に
バイアス磁界を印加するようにした磁気抵抗効果型再生
ヘッドが知られている(たとえば、特開昭51−112
320号公報、特開昭58−182125号公報)。し
かし、かかる構成においては、磁気抵抗効果素子に生ず
る熱雑音により、再生信号波形の歪が生ずるという問題
があった。
Conventionally, in order to use a magnetoresistive element with good linearity, a bias magnetic field is applied to the magnetoresistive element by passing a current through a conductor provided close to the magnetoresistive element, that is, a bias conductor. type playback heads are known (for example, Japanese Patent Laid-Open No. 51-112
320, JP-A-58-182125). However, such a configuration has a problem in that the reproduced signal waveform is distorted due to thermal noise generated in the magnetoresistive element.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、かかる従来技術の問題点を解消し、熱
雑音の発生を防止した磁気抵抗効果型再生ヘッドを提供
するにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a magnetoresistive reproducing head which eliminates the problems of the prior art and prevents the generation of thermal noise.

〔発明の概要〕[Summary of the invention]

磁気抵抗効果は素子に流した電流と磁気スピンの相互作
用であり、電子と電子の相互作用に基づく熱抵抗変化と
本質的に異なる。熱雑音は素子温度がテープ摺動により
温度T1がT2に変化することにともない、第5図に示
した矢印→のようにシフトすることに起因する。上記目
的を達成するために6本発明は第5図において。
The magnetoresistive effect is an interaction between a current passed through an element and magnetic spin, and is essentially different from a change in thermal resistance based on the interaction between electrons. Thermal noise is caused by the element temperature shifting as indicated by the arrow → in FIG. 5 as the temperature T1 changes to T2 due to tape sliding. In order to achieve the above object, the present invention is shown in FIG.

B、 −A、 =B2−A2となっていることに着目し
、磁気抵抗効果素子に印加するバイアス磁界を十分大片
<シ、この場合のポイン)AI、A2での抵抗値を参照
し、動作ポイン)Bl、B2のそれぞれとの差分を再生
信号として取り出すことにより。
Paying attention to the fact that B, -A, = B2 - A2, set the bias magnetic field applied to the magnetoresistive element to a sufficiently large value. Point) By extracting the difference between Bl and B2 as a reproduced signal.

熱雑音を無くすことができろようにした点に特徴がある
The feature is that it eliminates thermal noise.

〔発明の実施例〕[Embodiments of the invention]

以下1本発明の実施例を図面により説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図は本発明による磁気抵抗効果型再生ヘッドの一実
施例を示す構成図であって、1は磁気抵抗効果素子(以
下、MR素子といつ)、2は絶縁体、3はバイアス導体
、 4a 、 4bはバイアス導体接続端子、 5a 
、 5bはMR素子接続端子。
FIG. 1 is a block diagram showing an embodiment of a magnetoresistive reproducing head according to the present invention, in which 1 is a magnetoresistive element (hereinafter referred to as MR element), 2 is an insulator, 3 is a bias conductor, 4a and 4b are bias conductor connection terminals, 5a
, 5b is the MR element connection terminal.

6a 、 6b 、 6c 、 6(Iはリード線、7
は高周波バイアス回路、8はMR素子゛亀流回路、9は
サンプルホールド回路、IOは差動回路、 11は検波
整流回路、12は再生信号出力端子である。
6a, 6b, 6c, 6 (I is lead wire, 7
8 is a high frequency bias circuit, 8 is an MR element current circuit, 9 is a sample hold circuit, IO is a differential circuit, 11 is a detection rectifier circuit, and 12 is a reproduced signal output terminal.

同図において、バイアス導体3は接続端子4a。In the figure, the bias conductor 3 is a connection terminal 4a.

4bに電流を流した時に発生する磁界がMR素子10幅
方向(接続端子5a 、 5blC対して直交方向)に
回転させるように、MR素子に近接して配置されていれ
ば良く1本実施例ではMR素子1をパイアース導体3の
上に絶縁体2を介して配置している。
In this embodiment, it is only necessary that the MR element be placed close to the MR element so that the magnetic field generated when a current is passed through 4b rotates the MR element 10 in the width direction (orthogonal direction to the connecting terminals 5a and 5blC). An MR element 1 is placed on a bias conductor 3 with an insulator 2 interposed therebetween.

MR素子1には、MR素子電流回路8より第2図1a)
に示すように、直流定電流がリード線6d接続端子5b
 、 5aおよび接地されたリード線6bを介して流れ
ている。また、リード線6dにはサンプルホールド回路
9.差動回路10.検波整流回路11が順に接続され、
MR素子1の再生信号が出力端子12に出力される構成
となっている。バイアス導体3には、高周波バイアス電
流回路7より第2図(blに示したように、 Ib、 
、 Ib2の2値間を変化する高周波電流がリード線6
c 、接続端子4b 、 4aおよび接地されているリ
ード6aを介して流れている。この高周波電流の周波数
は信号周波数の上限の2倍以上あればよく1本実施例は
この上限を50kHzとし、 50kHzの高周波電流
を用いた。
The MR element 1 is connected to the MR element current circuit 8 in Fig. 2 (1a).
As shown in FIG.
, 5a and a grounded lead 6b. Further, the lead wire 6d has a sample hold circuit 9. Differential circuit 10. The detection rectifier circuits 11 are connected in order,
The configuration is such that the reproduction signal of the MR element 1 is output to an output terminal 12. As shown in FIG. 2 (bl), the high frequency bias current circuit 7 supplies the bias conductor 3 with Ib,
, A high frequency current that changes between two values of Ib2 flows through the lead wire 6.
c, it flows through the connecting terminals 4b, 4a and the grounded lead 6a. The frequency of this high frequency current may be at least twice the upper limit of the signal frequency. In this embodiment, this upper limit is set to 50 kHz, and a high frequency current of 50 kHz is used.

第3図はMR素子10入力磁界Hに対する抵抗値変化Δ
ψを示す動作曲線であり、動作点は高周波バイアス電流
により、 )(rbt l HIb2の間を交互に変化
している。12は入力信号磁界であり。
Figure 3 shows the resistance change Δ against the input magnetic field H of the MR element 10.
This is an operating curve showing ψ, and the operating point changes alternately between )(rbt l HIb2) due to the high frequency bias current. 12 is the input signal magnetic field.

高周波バイアス電流によって発生した磁界に重畳された
状態になっている。13はMR素子lの出力信号を示し
たものであり、そのエンベロープが入力信号となった高
周波信号となっている。
It is in a state where it is superimposed on the magnetic field generated by the high frequency bias current. Reference numeral 13 indicates the output signal of the MR element 1, which is a high frequency signal whose envelope is the input signal.

また、Aで示した部分が通常の再生状態、Bで示した部
分がたとえば、摩擦熱によって素子温度が上昇し、全体
的に高抵抗側にシフトし、再生信号としてはレベル変動
がある状態である。
Also, the part marked A is in a normal playback state, and the part marked B is a state in which, for example, the element temperature rises due to frictional heat, the overall resistance shifts to the high resistance side, and the playback signal has level fluctuations. be.

ここで、第1図に示したサンプルホールド回路9.差動
回路10により、第3図でのαn  Aの演算を行うこ
とにより、第4図に示すようなエンベロープを持つ信号
に変換される。この信号を検波整流回路11によって処
理することにより。
Here, the sample hold circuit 9 shown in FIG. By performing the calculation of αn A in FIG. 3 by the differential circuit 10, the signal is converted into a signal having an envelope as shown in FIG. 4. By processing this signal by the detection rectifier circuit 11.

出力端子12にMR素子1の入力磁界信号に応じた電気
信号が得られる。バイアス動作点HIblをΔψ−H曲
線のスロープの急な所に設定することが再生感度を高め
ることになることは言うまでもない。
An electrical signal corresponding to the input magnetic field signal of the MR element 1 is obtained at the output terminal 12. It goes without saying that setting the bias operating point HIbl at a steep slope of the Δψ-H curve increases the reproduction sensitivity.

〔発明の効果〕〔Effect of the invention〕

以上説明したように1本発明によれば、磁気抵抗効果素
子単体では回避が困難な熱雑音発生を防止できるので、
熱雑音のない再生信号を得ることができ、上記従来技術
の欠点を除いて優れた機能の磁気抵抗効果型再生ヘッド
を提供できる。
As explained above, according to the present invention, it is possible to prevent the generation of thermal noise that is difficult to avoid with a single magnetoresistive element.
A reproduction signal free of thermal noise can be obtained, and a magnetoresistive reproduction head with excellent functions can be provided without the drawbacks of the prior art described above.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による磁気抵抗効果型再生ヘッドの一実
施例を示す構成図、第2図ta>は第1図の磁気抵抗効
果素子に印加され゛る電流を示す波形図、第2図fbl
は第1図における高周波バイアス電流の波形図、第3図
は第1図に示した実施例の動作説明図、第4図はその出
力信号を示す波形図、第5図は本発明の動作原理図であ
る。 l・・・磁気抵抗効果素子。 3・・・バイアス導体1゜ 7・・・高周波バイアス電流回路。 9・・・サンプルホールド回路。 10・・・差動回路。 〈炉 代理人弁理士 小 川 勝 騙ニ 筋 1 m
FIG. 1 is a configuration diagram showing an embodiment of the magnetoresistive reproducing head according to the present invention, FIG. 2 is a waveform diagram showing the current applied to the magnetoresistive element of FIG. 1, and FIG. fbl
is a waveform diagram of the high frequency bias current in FIG. 1, FIG. 3 is an explanatory diagram of the operation of the embodiment shown in FIG. 1, FIG. 4 is a waveform diagram showing its output signal, and FIG. 5 is the operating principle of the present invention. It is a diagram. l...Magnetoresistive element. 3...Bias conductor 1゜7...High frequency bias current circuit. 9...Sample hold circuit. 10...Differential circuit. <Reactor agent Masaru Ogawa, deceiver 1 m

Claims (1)

【特許請求の範囲】[Claims] 磁気抵抗効果素子に近接して設けたバイアス導体に電流
を流すことによつて発生する磁界により、該磁気抵抗効
果素子の動作点を定める構成の磁気抵抗効果型再生ヘッ
ドにおいて、該バイアス導体に高周波電流回路を接続す
るとともに、磁気抵抗効果素子の出力信号を2分し、一
方を差動増幅器に供給するとともに、他方をサンプルホ
ールド回路を介して該差動増幅器に供給し、該サンプル
ホールド回路のサンプリング周期をバイアス用高周波電
流の周期に一致せしめたことを特徴とした磁気抵抗効果
型再生ヘッド。
In a magnetoresistive read head configured to determine the operating point of the magnetoresistive element by a magnetic field generated by passing a current through a bias conductor provided close to the magnetoresistive element, a high frequency wave is applied to the bias conductor. In addition to connecting the current circuit, the output signal of the magnetoresistive element is divided into two, one is supplied to the differential amplifier, and the other is supplied to the differential amplifier via the sample and hold circuit. A magnetoresistive reproducing head characterized in that a sampling period is made to match the period of a bias high-frequency current.
JP12605285A 1985-06-12 1985-06-12 Magneto-resistance effect type reproducing head Pending JPS61284819A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12605285A JPS61284819A (en) 1985-06-12 1985-06-12 Magneto-resistance effect type reproducing head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12605285A JPS61284819A (en) 1985-06-12 1985-06-12 Magneto-resistance effect type reproducing head

Publications (1)

Publication Number Publication Date
JPS61284819A true JPS61284819A (en) 1986-12-15

Family

ID=14925448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12605285A Pending JPS61284819A (en) 1985-06-12 1985-06-12 Magneto-resistance effect type reproducing head

Country Status (1)

Country Link
JP (1) JPS61284819A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5497111A (en) * 1994-12-22 1996-03-05 International Business Machines Corporation Peak detection circuit for suppressing magnetoresistive thermal asperity transients in a data channel
EP0802525A1 (en) * 1996-04-17 1997-10-22 Koninklijke Philips Electronics N.V. System for reading magnetic information including a detector for thermal asperity

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5497111A (en) * 1994-12-22 1996-03-05 International Business Machines Corporation Peak detection circuit for suppressing magnetoresistive thermal asperity transients in a data channel
US5559460A (en) * 1994-12-22 1996-09-24 International Business Machines Corporation Peak detection circuit for suppressing magnetoresistive thermal asperity transients in a data channel
EP0802525A1 (en) * 1996-04-17 1997-10-22 Koninklijke Philips Electronics N.V. System for reading magnetic information including a detector for thermal asperity
FR2747822A1 (en) * 1996-04-17 1997-10-24 Philips Electronics Nv MAGNETIC INFORMATION READING SYSTEM WITH THERMAL ASPERITY DETECTOR
US5956197A (en) * 1996-04-17 1999-09-21 U.S. Philips Corporation System for reading magnetic information provided with a thermal asperity detector

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