JPS61270818A - Liquid phase epitaxial growth equipment - Google Patents
Liquid phase epitaxial growth equipmentInfo
- Publication number
- JPS61270818A JPS61270818A JP11285285A JP11285285A JPS61270818A JP S61270818 A JPS61270818 A JP S61270818A JP 11285285 A JP11285285 A JP 11285285A JP 11285285 A JP11285285 A JP 11285285A JP S61270818 A JPS61270818 A JP S61270818A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial growth
- liquid
- liquid phase
- phase epitaxial
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、液相エピタキシャル成長装置に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a liquid phase epitaxial growth apparatus.
蓮−マ族化合物半導体を用いた半導体装置に於て、液相
エピタキシャル成長の量産は重要な技術である。特に素
子サイズの大きい太陽電池ではこの量産技術が大変重要
となってくる。Mass production using liquid phase epitaxial growth is an important technology for semiconductor devices using lotus compound semiconductors. This mass production technology is especially important for solar cells with large element sizes.
第3図はこのような用途に用いる従来の液相エピタキシ
ャル成長装置の構成を示す平面図、第4図は第3図の■
−W線での断面図そある。図において(1)は、ボート
本体で上段の室(2)、中段の室(31及び下段の室(
4)の3段構造から成り立っている。(5)は上記下段
の室(4)に挿入された結晶融液(8)を収納する念め
の引出し容器、(6)は上記上段の室(2)と上記中段
の室(3)とを仕切る@1のスライダ、(7)は上記中
段の室(3)と上記下段の室(4)とを仕切る第2のス
ライダ、(8)は結晶融液、(9)は液相エピタキシャ
ル成長させるべき基板、αQは上記上段の室(2)の結
晶融液(3)を上記中段の室[31K落下させるための
上記第1のスライダ(6)の開孔、(6)は上記中段の
室(3)の結晶融液(8ンを下段の室(4) K落下さ
せるための上記第2のスライダ(7)の開孔、(6)は
上記第1のスライダ(6)ヲ図示矢印方、向に移動させ
た時に時間遅れをもって上記第2のスライダ(7)を移
動させるL字形板、(至)は上記ボート(1)が炉内V
Cある時結晶融液(8)からの蒸発を抑えるとともにボ
ート(1)の移動の際結晶融液(8)がこぼれるのを防
ぐ蓋、(ロ)は該蓋(至)を固定するネジである。Figure 3 is a plan view showing the configuration of a conventional liquid phase epitaxial growth apparatus used for such applications, and Figure 4 is a
There is a cross-sectional view taken along the -W line. In the figure (1) is the upper chamber (2), middle chamber (31) and lower chamber (31) in the boat body.
It consists of the three-stage structure of 4). (5) is a drawer container for storing the crystal melt (8) inserted into the lower chamber (4), and (6) is the upper chamber (2) and the middle chamber (3). (7) is a second slider that partitions the middle chamber (3) and the lower chamber (4), (8) is a crystal melt, and (9) is a liquid phase epitaxial growth. αQ is the opening of the first slider (6) for dropping the crystal melt (3) in the upper chamber (2) by 31K to the middle chamber; (6) is the opening of the first slider (6); (3) The opening of the second slider (7) for dropping the crystal melt (8 mm) into the lower chamber (4), (6) is the opening of the first slider (6) in the direction of the arrow shown. , an L-shaped plate that moves the second slider (7) with a time delay when the boat (1) is moved in the furnace V
(C) is a lid that suppresses evaporation from the crystal melt (8) and prevents the crystal melt (8) from spilling when the boat (1) is moved; (B) is a screw that fixes the lid (to); be.
次に動作について説明する。Next, the operation will be explained.
従来の液相エピタキシャル成長装置では第4図に示した
状態でボート(1) ’i(炉内に入れる。ボート(1
1は移動の時、炉内で昇温されるが、その昇温の最中に
結晶融液(8)に含まれている蒸気圧の高り物質が蒸発
しないようにネジα→でM(J3が固定されている。In a conventional liquid phase epitaxial growth apparatus, the boat (1) is placed in the furnace in the state shown in Figure 4.
1 is heated in the furnace during transfer, but in order to prevent vapor pressure high substances contained in the crystal melt (8) from evaporating during the temperature rise, screw α→ M( J3 is fixed.
ボート(1)を用い九液相エピタキシャル成長では結晶
融液(8)が炉内で所定の温度に達すると、PJlのス
ライダ(6)全図示矢印方向に移動させ開孔叫から上段
の室(2)の結晶融液(8)全中段の室+31 K流入
させて基板(9) ft浸す。この状態で成長炉を徐冷
すると基板(9)に液相エピタキシャル成長が行われる
。In nine-liquid phase epitaxial growth using a boat (1), when the crystal melt (8) reaches a predetermined temperature in the furnace, the slider (6) of the PJl is moved in the direction of the arrow shown in the figure to move from the opening hole to the upper chamber (2). ) The crystal melt (8) is injected into the entire middle chamber +31 K to immerse the substrate (9) ft. When the growth furnace is slowly cooled in this state, liquid phase epitaxial growth is performed on the substrate (9).
該液相エピタキシャル成長終了後は第1のスライダ(6
)ヲさらに図示矢印方向に移動させL字形板(2)で第
2のスライダ(7)全移動させて開孔(ロ)を通じて結
晶融液(8)を中段の室(31゛から、下段の室(4)
に収容されてhる引出し容器(5)に収納する。After the liquid phase epitaxial growth is completed, the first slider (6
) is further moved in the direction of the arrow shown in the figure, and the L-shaped plate (2) is used to fully move the second slider (7) to flow the crystal melt (8) through the opening (b) from the middle chamber (31゛ to the lower chamber). Room (4)
It is stored in a drawer container (5) that is housed in a container.
従来の装置は以上の様に構成されているので、結晶融液
(8)は一旦上段の室(2) K収容されると液相エピ
タキシャル成長終了後まではキャリア・ガスであるH2
ガスに晒されることはないので、結晶融液(8)が酸化
しやすいものであればH2ガスによって還元されること
なく酸化した状態で液相エピタキシャル成長を行う欠点
があった。Since the conventional apparatus is constructed as described above, once the crystal melt (8) is contained in the upper chamber (2) K, it is used as a carrier gas H2 until after the liquid phase epitaxial growth is completed.
Since it is not exposed to gas, there is a drawback that if the crystal melt (8) is easily oxidized, liquid phase epitaxial growth is performed in an oxidized state without being reduced by H2 gas.
この発明は以上のような点に鑑みてなされたもので、酸
化された結晶融液によるエピタキシャル成長を防止でき
る液相エピタキシャル成長装置を提供するものである。The present invention has been made in view of the above points, and an object thereof is to provide a liquid phase epitaxial growth apparatus that can prevent epitaxial growth due to oxidized crystal melt.
この発明に係る液相エピタキシャル成長装置は、開口を
有し上段の室を開放状態又は密閉状態にする左右に移動
可能なスライド式の蓋を設けて、結晶融液の還元を行な
えるようにしたものである。The liquid phase epitaxial growth apparatus according to the present invention is equipped with a sliding lid that has an opening and is movable from side to side to open or close the upper chamber, so that crystal melt can be reduced. It is.
この発明においては、ボートの移動による結晶融液のこ
ぼれはスライダ式の蓋により防がれるとともに、液相エ
ピタキシャル成長前に蓋の開口によって結晶融液の還元
が行なわれ、液相エピタキシャル成長中は蓋によって結
晶融液を密閉することによシ結晶融液からの蒸発が防止
されるものである。In this invention, the slider-type lid prevents the crystal melt from spilling due to the movement of the boat, and the crystal melt is reduced by the opening of the lid before liquid phase epitaxial growth, and the lid closes during liquid phase epitaxial growth. By sealing the crystal melt, evaporation from the crystal melt is prevented.
以下、この発明の一実施例を図について説明する0
第1図はこの発明の一実施例による液相エピタキシャル
成長装置の構成を示す平面図、第2図は第1図のn−n
線での断面図を示し、図中、第3図、4!I4図と同一
符号は同一部分を示す。図において、(ト)は左右への
移動が可能で開孔(至)を有する蓋である。Hereinafter, one embodiment of the present invention will be explained with reference to the drawings. FIG. 1 is a plan view showing the configuration of a liquid phase epitaxial growth apparatus according to an embodiment of the present invention, and FIG.
3 and 4! The same symbols as in Figure I4 indicate the same parts. In the figure, (g) is a lid that can be moved from side to side and has an opening (to).
次に動作について説明する。Next, the operation will be explained.
第1のスライダ(6) 、 gp;2のスライダ(7)
全所定の位置に設置し、基板(9)は中段の室(31,
結晶融液(8)は上段の室(2)に設置し、移動可能な
スライド式蓋(至)全開孔(至)が真中になるよう設置
して上段の室(2)を開放状態とする。この状態でボー
) (1) t−移動しても結晶融液(8)と開孔(至
)までは距離があるためこぼれることはない。上段の室
(2)全開放状態のままボー) (1) を炉内に移動
させ結晶融液(8)全昇温する。1st slider (6), gp; 2nd slider (7)
The board (9) is placed in the middle chamber (31,
The crystal melt (8) is placed in the upper chamber (2), and the movable sliding lid (to) is placed so that the fully open hole (to) is in the middle, leaving the upper chamber (2) open. . In this state, (1) Even if it moves by t, it will not spill because there is a distance between the crystal melt (8) and the opening (to). Move the upper chamber (2) (1) into the furnace with it fully open and raise the temperature of the crystal melt (8).
結晶融液(8)は開孔(至)を通してキャリア・ガスで
ある!!2ガδに晒されるために酸化していた結晶融液
(8) +7該町ガスによって還元される。この後、蓋
(転)を図示矢印方向に移動し、開孔(ト)がボート(
1)本体からずれて上段の室(2)内の結晶融液(8)
が密閉された状態で液相エピタキシャル成長を行う。以
後の動作は従来装置と同じである0
本実施例装置では、開孔(至)を有する左右移動可能な
蓋(ト)を設けているが、蓋を設けることでボート移動
時の結晶融液(8)のこぼれを防ぎ、また開孔を有する
ことでH2ガスによる結晶融液(8)の還元が行われ該
結晶融液(8)の酸化を防止するため、酸化が原因と考
えられる異常液相エピタキシャル成長がなくなる。The crystal melt (8) is a carrier gas through the opening (to)! ! 2 The crystalline melt (8), which had been oxidized due to exposure to δ, is reduced by +7 the town gas. After this, move the lid (T) in the direction of the arrow shown in the figure, so that the opening (T) is aligned with the boat (
1) Crystal melt (8) in the upper chamber (2) shifted from the main body
Liquid phase epitaxial growth is performed in a sealed state. The subsequent operation is the same as that of the conventional device. In this example device, a lid (g) with an opening (to) that can be moved from side to side is provided. (8) is prevented from spilling, and the openings prevent the crystal melt (8) from being reduced by H2 gas and prevent the crystal melt (8) from being oxidized. Liquid phase epitaxial growth is eliminated.
以上のように、この発明に係る液相エピタキシャル成長
装置によれば、開孔を有する左右移動可能なスライド式
の蓋を設けたので、酸化された結晶融液(8)を還元し
て異常液相エピタキシャル成長を防止できる効果がある
。As described above, according to the liquid phase epitaxial growth apparatus according to the present invention, since the sliding lid having openings and being movable from side to side is provided, the oxidized crystal melt (8) is reduced and the abnormal liquid phase is reduced. It has the effect of preventing epitaxial growth.
第1図はこの発明の一実施例による液相エピタキシャル
成長装置の構成を示す平面図、第2図は第1図のn−n
線での断面図、第3図は従来の液相エピタキシャル成長
装置の構成を示す平面図、第4図は第3図のW−ff線
での断面図である。FIG. 1 is a plan view showing the configuration of a liquid phase epitaxial growth apparatus according to an embodiment of the present invention, and FIG.
3 is a plan view showing the configuration of a conventional liquid phase epitaxial growth apparatus, and FIG. 4 is a sectional view taken along line W-ff in FIG. 3.
Claims (1)
上段の室、液相エピタキシャル成長させるべき基板を収
容するための中段の室、上記液相エピタキシャル成長に
用いた上記結晶融液を流入し貯める引出し容器を収容す
るための下段の室、上記上段の室と上記中段の室、上記
中段の室と上記下段の室を仕切り結晶融液の上から下へ
の移動を可能にするための2枚のスライダから成るボー
ト本体と、開口を有し上記上段の室を開放状態又は密閉
状態にする左右に移動が可能なスライド式の蓋とを有す
ることを特徴とする液相エピタキシャル成長装置。1) An upper chamber for storing the crystal melt of the substance to be crystal grown, a middle chamber for accommodating the substrate to be subjected to liquid phase epitaxial growth, and a drawer into which the crystal melt used for the liquid phase epitaxial growth flows and is stored. A lower chamber for accommodating the container, two panels for partitioning the upper chamber and the middle chamber, and the middle chamber and the lower chamber to enable movement of the crystal melt from top to bottom. 1. A liquid phase epitaxial growth apparatus, comprising: a boat body consisting of a slider; and a sliding lid having an opening and movable from side to side to open or close the upper chamber.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11285285A JPS61270818A (en) | 1985-05-25 | 1985-05-25 | Liquid phase epitaxial growth equipment |
DE19863617333 DE3617333A1 (en) | 1985-05-25 | 1986-05-23 | Device for producing epitaxial growth from a liquid phase |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11285285A JPS61270818A (en) | 1985-05-25 | 1985-05-25 | Liquid phase epitaxial growth equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61270818A true JPS61270818A (en) | 1986-12-01 |
Family
ID=14597138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11285285A Pending JPS61270818A (en) | 1985-05-25 | 1985-05-25 | Liquid phase epitaxial growth equipment |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS61270818A (en) |
DE (1) | DE3617333A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10241703A1 (en) * | 2002-09-09 | 2004-03-18 | Vishay Semiconductor Gmbh | Reactor for carrying liquid phase epitaxial growth on semiconductor substrates comprises a growing chamber having an intermediate storage region for temporarily storing melts and a growing region for holding a substrate |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49131678A (en) * | 1973-04-21 | 1974-12-17 | ||
JPS5537096A (en) * | 1978-08-25 | 1980-03-14 | Rockwell International Corp | Multichannel acoustic electric volume control |
JPS5797621A (en) * | 1980-12-10 | 1982-06-17 | Mitsubishi Electric Corp | Boat for liquid phase epitaxial growth |
JPS57196528A (en) * | 1981-05-27 | 1982-12-02 | Mitsubishi Electric Corp | Liquid-phase growing device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52120765A (en) * | 1976-04-05 | 1977-10-11 | Nippon Telegr & Teleph Corp <Ntt> | Liquid-phase epitaxial growing boat |
DE3036317A1 (en) * | 1980-09-26 | 1982-05-19 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Liquid phase epitaxy appts. for mfg. semiconductor devices - where molten phase flows from cup shaped vessel into cell contg. substrates |
-
1985
- 1985-05-25 JP JP11285285A patent/JPS61270818A/en active Pending
-
1986
- 1986-05-23 DE DE19863617333 patent/DE3617333A1/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49131678A (en) * | 1973-04-21 | 1974-12-17 | ||
JPS5537096A (en) * | 1978-08-25 | 1980-03-14 | Rockwell International Corp | Multichannel acoustic electric volume control |
JPS5797621A (en) * | 1980-12-10 | 1982-06-17 | Mitsubishi Electric Corp | Boat for liquid phase epitaxial growth |
JPS57196528A (en) * | 1981-05-27 | 1982-12-02 | Mitsubishi Electric Corp | Liquid-phase growing device |
Also Published As
Publication number | Publication date |
---|---|
DE3617333A1 (en) | 1986-11-27 |
DE3617333C2 (en) | 1993-08-19 |
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