JPS61267207A - Compound superconductor - Google Patents
Compound superconductorInfo
- Publication number
- JPS61267207A JPS61267207A JP60108724A JP10872485A JPS61267207A JP S61267207 A JPS61267207 A JP S61267207A JP 60108724 A JP60108724 A JP 60108724A JP 10872485 A JP10872485 A JP 10872485A JP S61267207 A JPS61267207 A JP S61267207A
- Authority
- JP
- Japan
- Prior art keywords
- compound superconducting
- critical current
- compound
- superconducting wire
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、化合物超電導線に係り、特に、高い臨界電流
値が得られるようにした化合物超電導線に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a compound superconducting wire, and particularly to a compound superconducting wire capable of obtaining a high critical current value.
周知のように、現在最も特性の優れている化合物超電導
体は、Ｎｂ５Ｓｎであり、このＮｂ３３ｎ線を使用した
超電導磁石が多方面で利用されている。As is well known, the compound superconductor with the most excellent characteristics at present is Nb5Sn, and superconducting magnets using this Nb33n wire are used in many fields.
しかしながら、このＮｂａＳｎ線を使用した超電導磁石
では、高々１１〜２０Ｔの磁界しか発生させることがで
きない。したがって、さらに高磁界を発生させるために
新たな超電導材料の開発が望まれ、現在種々の研究が行
われている。このような研究の結果、ＮｂＮ、ＮｂＣ，
ＮｂＣＮ、ＭｏＮ。However, a superconducting magnet using this NbaSn wire can only generate a magnetic field of 11 to 20 T at most. Therefore, there is a desire to develop new superconducting materials to generate even higher magnetic fields, and various studies are currently being conducted. As a result of such research, NbN, NbC,
NbCN, MoN.
Ｎｂ３ Ｇｅ、Ｎｂａ Ｇａ、Ｎｂ５Ａ ｌ 、Ｎｂｓ
ＡＩＱｅ等の化合物超電導体が有望視されている。Nb3Ge, NbaGa, Nb5A l, Nbs
Compound superconductors such as AIQe are considered promising.
これらの化合物は、非平衡相であるため、一般的には蒸
着法、スパッタ法、気相成長法等の真空薄膜作製法によ
って作製される。今までの研究で臨界温度ＴＯ１臨界時
間ＢＣ２，，臨界電流密度Ｊｃの高い値が報告されてい
る。しかし、実用化には至っていない。その理由は、超
電導磁石に応用する場合には上述した特性の外に高い臨
界電流１ｃを要求されるからである。真空薄膜作製法で
作製された膜は必然的に非常に薄い。このため、たとえ
ば臨界電流密度Ｊｃが１０５Ａ／ｃｎと言った高いもの
でも臨界電流１ｃは数１００ｍＡと非常に小さい。実際
に超電導磁石に応用するには数１０〜数１０ＯＡのＩｃ
を必要とする。したがって、このままでは実用化はでき
ない。Since these compounds are in non-equilibrium phases, they are generally produced by vacuum thin film production methods such as vapor deposition, sputtering, and vapor phase growth. Previous studies have reported high values of critical temperature TO1, critical time BC2, and critical current density Jc. However, it has not been put into practical use. The reason for this is that when applied to a superconducting magnet, a high critical current 1c is required in addition to the above-mentioned characteristics. Films produced by vacuum thin film production methods are necessarily very thin. For this reason, even if the critical current density Jc is as high as 105 A/cn, the critical current 1c is extremely small at several 100 mA. In order to actually apply it to superconducting magnets, Ic of several tens to several tens of OA is required.
Requires. Therefore, it cannot be put to practical use as it is.
そこで、化合物超電導層の膜厚を増すことが考えられる
が、真空薄膜作製法を採用した場合、膜厚を増すと結晶
粒が粗大化し、これが原因して臨界電流密度Ｊｃが劣化
し、やはり実用化することはできない。Therefore, it is possible to increase the thickness of the compound superconducting layer, but if a vacuum thin film fabrication method is adopted, increasing the thickness will coarsen the crystal grains, which will cause the critical current density Jc to deteriorate. cannot be converted into
（発明の目的〕
本発明は、このような事情に鑑みてなされたもので、そ
の目的とするところは、真空薄膜作製法１ でしか
化合物超電導層を形成することができない化合物超電導
線において、臨界電流Ｉｃを充分大きくすることができ
、もって発生磁界の大きい超電導磁石の実現に寄与でき
る化合物超電導線を提供することにある。(Objective of the Invention) The present invention has been made in view of the above circumstances, and its purpose is to improve critical The object of the present invention is to provide a compound superconducting wire that can make the current Ic sufficiently large and thereby contribute to the realization of a superconducting magnet that generates a large magnetic field.
本発明によれば、化合物超電導層と常電導層とが交互に
積層されてなる化合物超電導線が提供される。According to the present invention, a compound superconducting wire is provided in which compound superconducting layers and normal conducting layers are alternately laminated.
ざらに詳しく述べると、各化合物超電導層は。To explain in detail, each compound superconducting layer is as follows.
臨界電流密度Ｊｃがほぼ最大となる膜厚に設定されてい
る。The film thickness is set so that the critical current density Jc is approximately the maximum.
本発明によれば、独立した化合物超電導層が複数層並列
的に存在していることになる。したがって、この超電導
線全体の臨界電流１ｃは、各化合物超電導層の臨界電流
を合計した値となる。このため、臨界電流１ｃの大きい
超電導線を得ることができる。この場合、各化合物超電
導層の膜厚をそれぞれ最大の臨界電流密度Ｊｃが得られ
る値に設定すると化合物超電導層の暦数をそれほど増す
ことなく大きな臨界電流Ｉｃのものを得ることができる
。According to the present invention, a plurality of independent compound superconducting layers exist in parallel. Therefore, the critical current 1c of the entire superconducting wire is the sum of the critical currents of each compound superconducting layer. Therefore, a superconducting wire with a large critical current 1c can be obtained. In this case, if the thickness of each compound superconducting layer is set to a value that provides the maximum critical current density Jc, a large critical current Ic can be obtained without increasing the number of compound superconducting layers.
以下２本発明の実施例を図面を参照しながら説明する。 Two embodiments of the present invention will be described below with reference to the drawings.
第１図は１本発明の一実施例に係る化合物超電導線を局
部的に取り出して示す図である。FIG. 1 is a diagram partially showing a compound superconducting wire according to an embodiment of the present invention.
同図において、１は銅、アルミチ、サファイア。In the figure, 1 is copper, aluminum, and sapphire.
ＡＩＮなどの基板を示し、この基板１の一方の面上にば
ＮｂＮ’、ＮｂＣ，ＮｂＣＮ、’ＭＯＮ。A substrate such as AIN is shown, and on one side of this substrate 1 are NbN', NbC, NbCN, and 'MON.
Ｎｂ３Ｇｅ、Ｎ”ｔｇ’ＡＩ、 Ｎｂａ ＡｌＧｅ。Nb3Ge, N"tg'AI, NbaAlGe.
Ｎｂ３’Ｇａなどの化合物超電導層２が形成されている
。そして、化合物超電導層２の上面にはＣｕ。A compound superconducting layer 2 such as Nb3'Ga is formed. Further, the upper surface of the compound superconducting layer 2 is made of Cu.
ＡＩなどの常電導層３が形成ぎれており、この常電導層
３の上面には化合物超電導層２が形成されている。以下
、同様に常電導層３と化合物超電導層２とが交互に積層
状態に形成されている。A normal conducting layer 3 such as AI is partially formed, and a compound superconducting layer 2 is formed on the upper surface of this normal conducting layer 3. Thereafter, similarly, normal conductive layers 3 and compound superconducting layers 2 are alternately formed in a laminated state.
化合物超電導層２は、゛蒸着法、スパッタ法、″イオン
ブレーティング法、熱ＣＶＤ法、プラズマＣＶＤ法など
の真空薄膜作製法と、これに必要に応じて熱処理工程を
組み合わせた方法によって形成されている。そして、各
化合物超電導層２ば。The compound superconducting layer 2 is formed by a vacuum thin film production method such as evaporation method, sputtering method, ion blating method, thermal CVD method, or plasma CVD method, and a method that combines this with a heat treatment process as necessary. Then, each compound superconducting layer 2.
臨界電流密度Ｊｃが最大になる膜厚に形成されている。The film thickness is formed to maximize the critical current density Jc.
また、常電導層３は、同じく蒸着法、スパッタ法、イオ
ンブレーティング法、熱ＣＶＤ法。Further, the normal conductive layer 3 can be formed using the same vapor deposition method, sputtering method, ion blating method, or thermal CVD method.
プラズマＣＶＤ法などの真空薄膜作製法で形成されてい
る。It is formed by a vacuum thin film manufacturing method such as a plasma CVD method.
このような、構成であると、化合物超電導層２の数に比
例した臨界電流１ｃに設定できる。すなわち、前述した
化合物超電導層を真空薄膜作製法で連続的に形成した場
合、その膜厚ｔと臨界電流Ｉｃとの間には第２図中Ａで
示すように、膜厚の増加とともに臨界電流Ｉｃが飽和す
る傾向がある。With such a configuration, the critical current 1c can be set in proportion to the number of compound superconducting layers 2. That is, when the above-described compound superconducting layer is continuously formed by a vacuum thin film manufacturing method, the critical current increases as the film thickness increases, as shown by A in FIG. 2, between the film thickness t and the critical current Ic. Ic tends to be saturated.
一方、臨界電流密度Ｊｃは、臨界電流Ｉｃを膜の断面積
で割ったものであるから第２図中８で示すように、ある
膜厚１．においてピーク値を示し、゛膜厚の増加ととも
に減少する傾向となる。この実施例では、各化合物超電
導層２の膜厚を、最大臨界電流密度Ｊｃの得られる膜厚
ｔｏに設定しているので、超電導線全体の臨界電流１ａ
・は化合物超電導層２の数に正確に比例したものとなり
、第２図中Ｃで示すように直線状に増加する。したかっ
６一
て、充分大きな臨界電流Ｉｃをもった実用的な超電導線
を得ることができ、結局、前述した効果を発揮すること
になる。On the other hand, the critical current density Jc is the critical current Ic divided by the cross-sectional area of the film, so as shown by 8 in FIG. It shows a peak value at , and tends to decrease as the film thickness increases. In this example, the thickness of each compound superconducting layer 2 is set to the thickness to that provides the maximum critical current density Jc, so the critical current 1a of the entire superconducting wire
. is exactly proportional to the number of compound superconducting layers 2, and increases linearly as shown by C in FIG. As a result, a practical superconducting wire with a sufficiently large critical current Ic can be obtained, and the above-mentioned effects can be achieved.
第１図は本発明の一実施例に係る化合物超電導線を局部
的に取り出して示（斜視図、第２図は本発明の詳細な説
明するための図である。
１・・・基板、２・・・化合物超電導層、３・・・常電
導層。
出願人代理人 弁理士 鈴江武彦
第１図
第２図FIG. 1 is a partially taken out perspective view of a compound superconducting wire according to an embodiment of the present invention, and FIG. 2 is a diagram for explaining the present invention in detail. 1...Substrate, 2 ... Compound superconducting layer, 3... Normally conducting layer. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2
Claims (4)
なることを特徴とする化合物超電導線。(1) A compound superconducting wire characterized in that compound superconducting layers and normal conducting layers are alternately laminated.
る膜厚に設定されてなることを特徴とする特許請求の範
囲第１項記載の化合物超電導線。(2) The compound superconducting wire according to claim 1, wherein the compound superconducting layer is set to have a thickness that maximizes critical current density.
Ｎ、ＭｏＮ、Ｎｂ＿３Ｇｅ、Ｎｂ＿３Ｇａ、Ｎｂ＿３Ａ
ｌ、Ｎｂ＿３ＡｌＧｅの中の何れかで形成されているこ
とを特徴とする特許請求の範囲第１項記載の化合物超電
導線。(3) The compound superconducting layer is NbN, NbC, NbC
N, MoN, Nb_3Ge, Nb_3Ga, Nb_3A
2. The compound superconducting wire according to claim 1, wherein the compound superconducting wire is formed of any one of Nb_3AlGe and Nb_3AlGe.
とも一つで形成されていることを特徴とする特許請求の
範囲第１項記載の化合物超電導線。(4) The compound superconducting wire according to claim 1, wherein the normal conductive layer is made of at least one of Cu and Al.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60108724A JPS61267207A (en) | 1985-05-21 | 1985-05-21 | Compound superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60108724A JPS61267207A (en) | 1985-05-21 | 1985-05-21 | Compound superconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61267207A true JPS61267207A (en) | 1986-11-26 |
Family
ID=14491942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60108724A Pending JPS61267207A (en) | 1985-05-21 | 1985-05-21 | Compound superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61267207A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63211518A (en) * | 1987-02-26 | 1988-09-02 | Sumitomo Electric Ind Ltd | Superconductive conductor |
| JPS643908A (en) * | 1987-06-26 | 1989-01-09 | Hitachi Ltd | Composite conductor |
| JPH07263765A (en) * | 1994-03-24 | 1995-10-13 | Agency Of Ind Science & Technol | Insulating gate field effect transistor, production thereof, and integrated circuit device of insulating gate field effect transistor |
-
1985
- 1985-05-21 JP JP60108724A patent/JPS61267207A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63211518A (en) * | 1987-02-26 | 1988-09-02 | Sumitomo Electric Ind Ltd | Superconductive conductor |
| JPS643908A (en) * | 1987-06-26 | 1989-01-09 | Hitachi Ltd | Composite conductor |
| JPH07263765A (en) * | 1994-03-24 | 1995-10-13 | Agency Of Ind Science & Technol | Insulating gate field effect transistor, production thereof, and integrated circuit device of insulating gate field effect transistor |
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