JPS6126232B2 - - Google Patents
Info
- Publication number
- JPS6126232B2 JPS6126232B2 JP4037678A JP4037678A JPS6126232B2 JP S6126232 B2 JPS6126232 B2 JP S6126232B2 JP 4037678 A JP4037678 A JP 4037678A JP 4037678 A JP4037678 A JP 4037678A JP S6126232 B2 JPS6126232 B2 JP S6126232B2
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- transistor
- base layer
- thickness
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4037678A JPS54133087A (en) | 1978-04-07 | 1978-04-07 | Semiconductor electronic switch circuit element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4037678A JPS54133087A (en) | 1978-04-07 | 1978-04-07 | Semiconductor electronic switch circuit element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54133087A JPS54133087A (en) | 1979-10-16 |
| JPS6126232B2 true JPS6126232B2 (enrdf_load_stackoverflow) | 1986-06-19 |
Family
ID=12578919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4037678A Granted JPS54133087A (en) | 1978-04-07 | 1978-04-07 | Semiconductor electronic switch circuit element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54133087A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60117668A (ja) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | サイリスタ装置 |
-
1978
- 1978-04-07 JP JP4037678A patent/JPS54133087A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54133087A (en) | 1979-10-16 |
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