JPS61258501A - Microwave variable reactance element - Google Patents
Microwave variable reactance elementInfo
- Publication number
- JPS61258501A JPS61258501A JP10069085A JP10069085A JPS61258501A JP S61258501 A JPS61258501 A JP S61258501A JP 10069085 A JP10069085 A JP 10069085A JP 10069085 A JP10069085 A JP 10069085A JP S61258501 A JPS61258501 A JP S61258501A
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- metal rod
- variable reactance
- microwave
- short
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
Landscapes
- Waveguide Connection Structure (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
この発明は、金属棒の挿入長により調整を行うマイクロ
波可変リアクタンス素子において・該金属棒と該導波管
との間に短絡面を形成することにより、
放電等の障害を防止して、安定な動作を確保するように
したものである。[Detailed Description of the Invention] [Summary] The present invention provides a microwave variable reactance element that is adjusted by the insertion length of a metal rod. By forming a short-circuit surface between the metal rod and the waveguide, This prevents problems such as electrical discharge and ensures stable operation.
本発明はマイクロ波立体回路に用いる可変リアクタンス
素子の改善に関する。The present invention relates to improvements in variable reactance elements used in microwave three-dimensional circuits.
例えば半導体装置の製造プロセスにおいて、プラズマ処
理によりプロセスのドライ化及び低温化、或いはパター
ンの微細化などの効果を得ているが、多量の活性種を生
成して処理量を増大するに際して、高電力を印加するこ
とができるマイクロ波による励起が行われている。For example, in the manufacturing process of semiconductor devices, plasma processing has the effect of making the process dryer and cooler, or making the pattern finer. However, in order to generate a large amount of active species and increase the throughput, high power Excitation is performed using microwaves that can apply .
この様なマイクロ波電力応用装置においても次第に大出
力が要望されており、これに使用するマイクロ波回路素
子についても取り扱う電力に対して十分に耐え、安定し
て動作することが当然に要求される。Increasingly, high output power is required in such microwave power application devices, and it is a matter of course that the microwave circuit elements used in these devices must be able to sufficiently withstand the power being handled and operate stably. .
マイクロ波電力応用の一例として、マイクロ波プラズマ
処理装置の模式図を第3図に示ず。A schematic diagram of a microwave plasma processing apparatus is shown in FIG. 3 as an example of microwave power application.
マイクロ被電Ig、11において通常マクネトロンによ
って発振された周波数2.45GIIzのマイクロ波は
、導波管によりアイソレータ12へ導かれる。アイソレ
ータ12はその内臓するフェライトにより入射波はほぼ
完全に通ずが、不整合で戻って来た反射波は90度偏向
して擬似負荷に吸収させる。このようにして導かれたマ
イクロ波は方向性結合器13で入射波、反射波の電力が
モニターされる。Microwaves with a frequency of 2.45 GIIz, which are normally oscillated by a Macnetron in the micro-electrified Ig, 11, are guided to the isolator 12 by a waveguide. The isolator 12 allows almost complete transmission of incident waves due to its built-in ferrite, but reflected waves that return due to mismatch are deflected by 90 degrees and absorbed by the pseudo load. The microwaves guided in this manner are monitored by the directional coupler 13 for the power of the incident wave and the reflected wave.
プラズマ生成室17として石英管がTEo+モード導波
管15の電界方向に挿入されており、このプラズマ生成
室17内に、例えば4弗化炭素(cp、)と酸素(0□
)との混合ガスを圧力0.1〜1OTorr程度に導入
し、このマイクロ波電力によりプラズマを励起する。こ
の際に、3本柱整合器14と短絡プランジャ整合器16
とによりマイクロ波の整合を行う。A quartz tube is inserted as a plasma generation chamber 17 in the electric field direction of the TEo+ mode waveguide 15, and in this plasma generation chamber 17, for example, carbon tetrafluoride (cp) and oxygen (0□
) is introduced at a pressure of about 0.1 to 1 O Torr, and the plasma is excited by the microwave power. At this time, the three-pillar matching box 14 and the short-circuit plunger matching box 16
Microwave matching is performed by
この様に生成されたプラズマはプラズマ処理室18に導
かれ、例えば半導体基板20のエツチング処理等が行わ
れる。なおプラズマ生成室17は冷却器19により水冷
されている。The plasma generated in this manner is led to the plasma processing chamber 18, where, for example, etching processing of the semiconductor substrate 20 is performed. Note that the plasma generation chamber 17 is water-cooled by a cooler 19.
前記例の如くマイクロ波電力応用装置では電子レンジな
ど一部の簡易な装置を除いて、電源から負荷に最大電力
を供給するために、両者の間Gこ可変リアクタンス素子
からなる整合器が挿入される。As mentioned above, in microwave power application devices, except for some simple devices such as microwave ovens, a matching box consisting of a G variable reactance element is inserted between the power source and the load in order to supply maximum power to the load. Ru.
マイクロ波立体回路のリアクタンス素子構造のうちで、
風波管の広い面から金属棒を電界に平行に挿入する構造
は、挿入長に応じてリアクタンスが容量性から直列共振
を経て誘導性に変化し、構造上挿入長の可変が容易であ
るために、可変リアクタンス素子として多く用いられる
。なおこの金属棒はスタブ(stub)と呼ばれている
。Among the reactance element structures of microwave three-dimensional circuits,
In the structure in which a metal rod is inserted parallel to the electric field from the wide surface of the wind wave tube, the reactance changes from capacitive to inductive through series resonance depending on the insertion length, and the insertion length can be easily varied due to the structure. , often used as a variable reactance element. Note that this metal rod is called a stub.
第2図(al、(blば何れも前記の金属棒を用いる可
変リアクタンス素子の従来例の断面図である。同図(a
lに示す例は基本的な構造であり、金属棒1の風波管2
への挿入長はねし構造で可変とされている。この構造で
は導波管2の内壁面を導波管2と金属棒1との接触位置
と考えているが、実際にはこの螺合部5で大きな反則を
生じたり、放電が発生して高温となり熱膨張による調整
不能、或いは融着に至るなどの障害の要因となっている
。Figure 2 (al and bl) are sectional views of conventional examples of variable reactance elements using the metal rods mentioned above.
The example shown in l is a basic structure, with a wind wave tube 2 of a metal rod 1.
The insertion length is variable due to the spring structure. In this structure, the inner wall surface of the waveguide 2 is considered to be the contact point between the waveguide 2 and the metal rod 1, but in reality, a large fouling may occur at this threaded portion 5, or an electric discharge may occur, causing a high temperature. This causes problems such as inability to adjust due to thermal expansion or fusion.
この問題に対処するために同図(b)に示す如くチョー
クフランジ構造を加えて、螺合部5をマイクロ波から隔
離することが行われている。しかしながらこの構造もマ
イクロ波電力を増大した場合には、開口近傍で放電を発
生するなどの問題を残している。In order to deal with this problem, a choke flange structure is added to isolate the threaded portion 5 from the microwaves, as shown in FIG. 5(b). However, this structure still has problems such as discharge occurring near the opening when the microwave power is increased.
以上説明した如く、金属棒の導波管内の挿入長を調整す
る可変リアクタンス素子は整合器等に最も適しているが
、従来のこの構造の可変リアクタンス素子はマイクロ波
電力を増大する場合などに放電を発生する虞が多く、そ
の改善が強く要望されている。As explained above, a variable reactance element that adjusts the insertion length of a metal bar into a waveguide is most suitable for matching devices, etc., but conventional variable reactance elements with this structure are used when increasing microwave power, etc. There is a strong possibility that this will occur, and improvements are strongly desired.
前記問題点は、例えば第1図に示す実施例の如く、
支持部材3に一端近傍において螺合する金属棒1の他端
が電界に平行に導波管2内に挿入され、該挿入長が該金
属棒1の回転により調整可能であり、
該金属棒1を周回して該金属棒1と該導波管2との間に
短絡面を形成する弾性部材4を備えてなる本発明による
マイクロ波可変リアクタンス素子により解決される。The problem is that, for example, as in the embodiment shown in FIG. 1, the other end of the metal rod 1 screwed into the support member 3 near one end is inserted into the waveguide 2 parallel to the electric field, and the insertion length is The micro according to the present invention is adjustable by the rotation of the metal rod 1 and includes an elastic member 4 that goes around the metal rod 1 to form a short-circuit surface between the metal rod 1 and the waveguide 2. This is solved by a wave variable reactance element.
本発明によるマイクロ波可変リアクタンス素子は、金属
棒と導波管との間の間隙に短絡面を設けることにより、
従来問題であった放電、反射波の発生を防止している。The microwave variable reactance element according to the present invention provides a short circuit surface in the gap between the metal rod and the waveguide.
This prevents the generation of discharge and reflected waves, which were problems in the past.
挿入長調整のための回転による金属棒の軸に垂直な方向
の位置ずれ等に対しては、この短絡面を弾性部材で形成
することにより対処している。なおこの目的に通ずる弾
性を有する導電性部材としては、例えば電気伝導性0リ
ング、成形された金属網などがある。Displacement in the direction perpendicular to the axis of the metal rod due to rotation for adjusting the insertion length is dealt with by forming this short circuit surface with an elastic member. Examples of conductive members having elasticity that can be used for this purpose include electrically conductive O-rings, molded metal nets, and the like.
以下本発明を第1図に断面図を示す実施例により具体的
に説明する。The present invention will be specifically explained below with reference to an embodiment whose cross-sectional view is shown in FIG.
同図において、■は金属棒、2は導波管、3は金属棒1
を支持する部材であり、金属棒1はその一端の近傍が螺
刻され支持部材3と螺合することは従来と同様である。In the same figure, ■ is a metal rod, 2 is a waveguide, and 3 is a metal rod 1.
The metal rod 1 is threaded near one end and is screwed into the support member 3, as in the conventional case.
本実施例では前記短絡面を形成する弾性部材4として円
環状Qこ成形した金属網を、導波管2と支持部材3との
間に設けた空隙に挿入しており、この金属網は金属棒1
の全周に接し、かつ勇2波管2に密着している。In this embodiment, a metal mesh formed into an annular Q shape is inserted into a gap provided between the waveguide 2 and the support member 3 as the elastic member 4 forming the short circuit surface, and this metal mesh is made of metal. stick 1
is in contact with the entire circumference of the tube, and is in close contact with the 2-wave tube 2.
なお先に第3図を参照して説明した装置と同様なマイク
ロ波プラズマ処理装置の3木柱整合器を本実施例の素子
で構成した場合に、整合を行わない状態では入射1.5
kHに対し反射1.1に一程度を生ずる系が、入射1.
5kWに対し反射0.3kt+程度にまで整合された。Note that when a three-wooden matching device of a microwave plasma processing apparatus similar to the apparatus described above with reference to FIG.
A system that produces a reflection of about 1 in 1.1 for kHz has an incidence of 1.1.
The reflection was matched to about 0.3kt+ for 5kW.
更に先に第2図(blに示した素子からなる3木柱整合
器では、前記のアーク放電がしばしば発生し例えば20
分間程度の動作で金属棒端の温度が170℃程度に達し
て調整操作が不可能であるのに対して、本実施例では室
温に保たれて再調整等のための操作は常時可能であり、
螺合部などに損傷も発生していない。Furthermore, in a three-wooden matching device consisting of the elements shown in FIG. 2 (bl), the aforementioned arc discharge often occurs, for example,
The temperature at the end of the metal rod reaches about 170°C after a minute of operation, making adjustment impossible.In contrast, in this embodiment, the temperature is maintained at room temperature and readjustment operations are always possible. ,
There was no damage to the threaded parts.
以上説明した如く本発明による可変リアクタンス素子は
、大電力マイクロ波電力応用装置等における放電等の障
害発生防止の効果が顕著であり、目的とするプロセスの
安定した遂行に大きく寄与する。As described above, the variable reactance element according to the present invention has a remarkable effect of preventing the occurrence of failures such as discharge in high-power microwave power application equipment, etc., and greatly contributes to the stable performance of the intended process.
第1回は本発明による可変リアクタンス素子の実施例を
示す断面図、
第2図は可変リアクタンス素子の従来例を示す断面図、
第3図はマイクロ波プラズマ処理装置の一例を示す模式
図である。
図において、
1は金属棒、
2は導波管、
3は支持部材、
4は短絡面を形成する弾性部材を示す。
可変り了7クンヌ希′+tf)突施少11〈νη′而図
面 1 図
=、、 (シ)
戸り多り了フタン2.素子司イ見来イク1トっ断面図t
b k−図Part 1 is a cross-sectional view showing an example of a variable reactance element according to the present invention, Fig. 2 is a cross-sectional view showing a conventional example of a variable reactance element, and Fig. 3 is a schematic diagram showing an example of a microwave plasma processing apparatus. . In the figure, 1 is a metal rod, 2 is a waveguide, 3 is a supporting member, and 4 is an elastic member forming a short-circuit surface. Variable 7 kunnu rare' + tf) Project 11〈νη'The drawing 1 Figure=,, (shi) The door is multiplied 2. Motoko Tsukasa's first orgasm cross-section
b k-diagram
Claims (1)
1)の他端が電界に平行に導波管(2)内に挿入され、
該挿入長が該金属棒(1)の回転により調整可能であり
、 該金属棒(1)を周回して該金属棒(1)と該導波管(
2)との間に短絡面を形成する弾性部材(4)を備えて
なることを特徴とするマイクロ波可変リアクタンス素子
。[Claims] A metal rod (
1) The other end is inserted into the waveguide (2) parallel to the electric field,
The insertion length can be adjusted by rotating the metal rod (1), and the metal rod (1) and the waveguide (
2) A microwave variable reactance element comprising an elastic member (4) forming a short-circuit surface between the element and the elastic member (4).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10069085A JPS61258501A (en) | 1985-05-13 | 1985-05-13 | Microwave variable reactance element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10069085A JPS61258501A (en) | 1985-05-13 | 1985-05-13 | Microwave variable reactance element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61258501A true JPS61258501A (en) | 1986-11-15 |
Family
ID=14280722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10069085A Pending JPS61258501A (en) | 1985-05-13 | 1985-05-13 | Microwave variable reactance element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61258501A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0314806U (en) * | 1989-06-28 | 1991-02-14 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5618001U (en) * | 1979-07-23 | 1981-02-17 | ||
JPS5930324A (en) * | 1982-08-13 | 1984-02-17 | Hitachi Ltd | Signal converting circuit |
-
1985
- 1985-05-13 JP JP10069085A patent/JPS61258501A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5618001U (en) * | 1979-07-23 | 1981-02-17 | ||
JPS5930324A (en) * | 1982-08-13 | 1984-02-17 | Hitachi Ltd | Signal converting circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0314806U (en) * | 1989-06-28 | 1991-02-14 |
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