JPS61252143A - Manufacture of transparent conductive film - Google Patents

Manufacture of transparent conductive film

Info

Publication number
JPS61252143A
JPS61252143A JP60093406A JP9340685A JPS61252143A JP S61252143 A JPS61252143 A JP S61252143A JP 60093406 A JP60093406 A JP 60093406A JP 9340685 A JP9340685 A JP 9340685A JP S61252143 A JPS61252143 A JP S61252143A
Authority
JP
Japan
Prior art keywords
transparent conductive
film
conductive film
transparent
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60093406A
Other languages
Japanese (ja)
Other versions
JPH0425865B2 (en
Inventor
博 山口
実 長田
千代倉 守成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lincstech Circuit Co Ltd
Original Assignee
Hitachi Condenser Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Condenser Co Ltd filed Critical Hitachi Condenser Co Ltd
Priority to JP60093406A priority Critical patent/JPS61252143A/en
Publication of JPS61252143A publication Critical patent/JPS61252143A/en
Publication of JPH0425865B2 publication Critical patent/JPH0425865B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Laminated Bodies (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は透明導電性フィルムの製造方法に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a method for producing a transparent conductive film.

(従来の技術) 従来、ガラス板に透明導′IR膜を形成した透明導電性
ガラスが液晶やEL、エレクトロクロミック等のディス
プレーの電極、太陽電池の電極あるいは帯電防止、N!
i波遮断等のために使われている。
(Prior Art) Conventionally, transparent conductive glass, in which a transparent conductive IR film is formed on a glass plate, has been used as electrodes for displays such as liquid crystal, EL, and electrochromic, electrodes for solar cells, antistatic, and N!
It is used for I-wave blocking, etc.

しかしながら透明導電性ガラスはガラス板を基材として
用いているために可撓性、加工性、耐衝撃性に劣り、用
途によっては好ましくないことも多い。そのため最近ガ
ラス板の代りに高分子フィルムを基材に用いた透明導電
性フィルムが注目を浴びるようになり、透明導電性ガラ
スでは不可能であった入出力装置の透明スイッチの電極
などへも利用され始めた。
However, since transparent conductive glass uses a glass plate as a base material, it is inferior in flexibility, workability, and impact resistance, and is often undesirable depending on the application. For this reason, transparent conductive films that use polymer film as a base material instead of glass plates have recently attracted attention, and are now being used for electrodes of transparent switches in input/output devices, which was not possible with transparent conductive glass. It started to happen.

しかし、高分子フィルムは、通常、ガラス板よりも耐熱
性が大きく劣るため、200℃以上の高温に加熱しなが
ら透明導1!膜を形成する方法を用いることができない
。そのために真空蒸着法により透明導電膜を形成する場
合には、先ず低温で成膜して高抵抗で不透明な膜を形成
し、次に後処理として高分子フィルムが耐えうる温度で
長時間かけて加熱酸化処理を行ない、低抵抗で透明な膜
にする必要がある。またイオンブレーティング法やスパ
ッタリング法により成膜する場合、真空蒸着法に比べて
低抵抗で高通過率の膜ができるが、低温で成膜した場合
、機械的耐久性が劣るため、やはり加熱処理を行なって
いる。
However, polymer films usually have much lower heat resistance than glass plates, so they are heated to a high temperature of 200 degrees Celsius or more while being heated to a transparent conductor. A method of forming a film cannot be used. For this reason, when forming a transparent conductive film using a vacuum evaporation method, it is first deposited at a low temperature to form a high-resistance, opaque film, and then post-treated at a temperature that the polymer film can withstand for a long period of time. It is necessary to perform a thermal oxidation treatment to create a low-resistance, transparent film. Furthermore, when depositing a film using ion blasting or sputtering, a film with lower resistance and higher pass rate can be obtained compared to vacuum evaporation. is being carried out.

(発明が解決しようとする問題点) しかしながら、片面に透明導電膜を形成した高分子フィ
ルムを加熱すると、透明導電膜形成側の面と反対面とで
熱収縮率が大きく異なるために、一方にカールするとい
う欠点があり、また、反対面から低分子量分が析出しフ
ィルム面が白濁する欠点がある。そのために、加熱温度
を比較的低温にして処理する方法もあるが、加熱時間が
長くなり、製造に時間がかかる欠点があった。
(Problem to be Solved by the Invention) However, when a polymer film with a transparent conductive film formed on one side is heated, the thermal shrinkage rate differs greatly between the side on which the transparent conductive film is formed and the opposite side. It has the disadvantage of curling, and also has the disadvantage that low molecular weight components precipitate from the opposite side, resulting in a cloudy film surface. For this purpose, there is a method in which the heating temperature is set to a relatively low temperature, but this method has the drawback that the heating time is long and the manufacturing time is time-consuming.

また、透明導電性フィルムを透明スイッチ用電極等に用
いた場合、透明導N躾の機械的耐久性のみならず、フィ
ルムの反対側のバック面の耐摩耗性も要求されるが、従
来の方法では、十分な耐摩耗性が得られず、損傷し易い
欠点があった。
In addition, when a transparent conductive film is used as an electrode for a transparent switch, not only the mechanical durability of the transparent conductive layer but also the abrasion resistance of the back surface on the opposite side of the film are required, but conventional methods However, this had the disadvantage that sufficient wear resistance could not be obtained and it was easily damaged.

本発明の目的は、以上の欠点を改良し、カールを防止で
き、バック面の耐摩耗性を向上でき、短時間に製造しつ
る透明導電性フィルムの製造方法を提供するものである
The object of the present invention is to provide a method for producing a transparent conductive film that can improve the above-mentioned drawbacks, prevent curling, improve the abrasion resistance of the back surface, and be produced in a short time.

(問題点を解決するための手段) 本発明は、上記の目的を達成するために、高分子フィル
ムの片面に透明導電膜を形成する透明導電性フィルムの
製造方法において、高分子フィルムの透明導電膜形成面
と反対側の面にバック層を形成した後に加熱処理するこ
とを特徴とする透明導電性フィルムの製造方法を提供す
るものである。
(Means for Solving the Problems) In order to achieve the above object, the present invention provides a transparent conductive film manufacturing method in which a transparent conductive film is formed on one side of a polymer film. The present invention provides a method for producing a transparent conductive film, characterized in that a back layer is formed on the surface opposite to the film-forming surface and then heat-treated.

(作用) すなわち、本発明は、高分子フィルムの片面に[n20
s等からなる透明導IInを形成するとともに、他方の
面に)n20s 、 Sn 02 、 ALzOs 、
Zt” Oz 、Cu S、Ru O,Si 02 。
(Function) That is, in the present invention, [n20
While forming a transparent conductor IIn consisting of s, etc., on the other side) n20s, Sn02, ALzOs,
Zt”Oz, CuS, RuO, Si02.

T+  02  、Zn O,Zn S、  Mg F
、An  、Ag 。
T+ 02, ZnO, ZnS, MgF
, An, Ag.

Pd 、Pt等のうら少なくとも181I類を主成分と
するバック層を形成し、その後、熱処理するもので、フ
ィルム両面の熱収縮率を同一かあるいはそれに近い値に
できるためにカールを防止でき、またバック層によりフ
ィルム内からの低分子量分の析出を防止して白濁を防止
できるとともに耐摩耗性を向上でき、さらに比較的高温
で加熱処理できるために製造時間が短縮される。
A back layer containing Pd, Pt, etc. as the main component is formed, and then heat treatment is performed.The heat shrinkage rate on both sides of the film can be made to be the same or close to it, which prevents curling. The back layer can prevent precipitation of low molecular weight components from within the film, thereby preventing clouding and improving abrasion resistance.Furthermore, since heat treatment can be performed at a relatively high temperature, manufacturing time can be shortened.

(実施例) 以下、本発明を実施例に基づいて説明する。(Example) Hereinafter, the present invention will be explained based on examples.

高分子フィルムとして厚さ100μ扉のポリエチレンテ
レフタレートフィルムを用い、高周波イオンブレーティ
ング法により次の条件でフィルムの片面に透明導電膜を
形成する。
A polyethylene terephthalate film with a thickness of 100 μm was used as the polymer film, and a transparent conductive film was formed on one side of the film by high frequency ion blating under the following conditions.

a)基材温度   常温 b)蒸発材料   In −5wt%3nc)RFパワ
ー  500W d)成膜速度   15人7sec e)膜   厚     1000A そして、酸素ガスを5 X 10= Torrの圧力で
槽内に注入する。
a) Base material temperature Room temperature b) Evaporation material In -5wt%3nc) RF power 500W d) Film formation speed 15 people 7 seconds e) Film thickness 1000A Then, oxygen gas is injected into the tank at a pressure of 5 x 10 = Torr. .

ポリエチレンテレフタレートフィルムの片面に透明導電
膜を形成後、他方の面に電子ビーム蒸着により厚さ10
00人のS+02膜を形成する。
After forming a transparent conductive film on one side of the polyethylene terephthalate film, the other side is coated with a thickness of 10 mm by electron beam evaporation.
Form 00 S+02 membranes.

5iQz膜を形成後、フィルムを空気中において温度1
70℃で60分間加熱する。
After forming the 5iQz film, the film was placed in the air at a temperature of 1
Heat at 70°C for 60 minutes.

加熱処理の際のフィルムの変形を観察したところ、カー
ルは起こらず、白濁もみられなかった。
When the deformation of the film was observed during the heat treatment, no curling occurred and no clouding was observed.

また、透明導1!膜とS+02膜とをガーゼにより10
0g/cIiの圧ツノで1000回摩擦したが、表面に
損傷が生じなかった。
Also, transparent guide 1! Seal the membrane and S+02 membrane with gauze for 10 minutes.
Although it was rubbed 1000 times with a pressure horn of 0 g/cIi, no damage was caused to the surface.

なお、比較例1として上記実施例と同じ条件でポリエチ
レンテレフタレートフィルムに透明導電膜を形成した後
、5i0211を形成せずに、実施例と同じ条件で加熱
処理をしたところ、カールが生じ白濁した。また、実施
例と同じ条件でガーゼによりフィルム両面を摩擦したと
ころ、透明導電膜は損傷しなかったが、反対面にはキズ
が発生していた。
As Comparative Example 1, a transparent conductive film was formed on a polyethylene terephthalate film under the same conditions as in the above example, and then heat-treated under the same conditions as in the example without forming 5i0211, resulting in curling and clouding. Furthermore, when both sides of the film were rubbed with gauze under the same conditions as in Examples, the transparent conductive film was not damaged, but scratches were found on the opposite side.

また、比較例2として、実施例と同じ条件でポリエチレ
ンテレフタレートフィルムに透明導ml!及びS’+O
z膜を形成し加熱処理をしない透明導電性フィルムを用
い、両膜面をガーゼにより100 g/aiの圧力で1
00回摩擦したところ両膜面にキズが発生した。
In addition, as Comparative Example 2, transparent ml was applied to a polyethylene terephthalate film under the same conditions as in the example. and S'+O
Using a transparent conductive film that forms a Z film and does not undergo heat treatment, both film surfaces are covered with gauze at a pressure of 100 g/ai.
When rubbed 00 times, scratches occurred on both film surfaces.

(発明の効果) 以上の通り、本発明によれば、高分子フィルムの片面に
透明導′l71111を形成し、他方の面にバック層を
形成した後、熱処理を行うことにより、熱処理によるカ
ール、白濁がなく導電面、バック面共に機械的強度のす
ぐれたかつ、製造時間を短縮しうる透明導電性フィルム
の製造方法が得られる。
(Effects of the Invention) As described above, according to the present invention, a transparent conductor is formed on one side of a polymer film, a back layer is formed on the other side, and then heat treatment is performed to prevent curling due to heat treatment. A method for producing a transparent conductive film that is free from cloudiness, has excellent mechanical strength on both the conductive surface and the back surface, and can shorten the production time is obtained.

特許出願人 日立コンデンサ株式会社 手続補正書(自発) 昭和60年5 月14 日Patent applicant: Hitachi Capacitor Co., Ltd. Procedural amendment (voluntary) May 14, 1985

Claims (2)

【特許請求の範囲】[Claims] (1)高分子フィルムの片面に透明導電膜を形成する透
明導電性フィルムの製造方法において、高分子フィルム
の透明導電膜形成面と反対側の面にバック層を形成した
後に加熱処理することを特徴とする透明導電性フィルム
の製造方法。
(1) In a method for manufacturing a transparent conductive film in which a transparent conductive film is formed on one side of a polymer film, heat treatment is performed after forming a back layer on the side opposite to the transparent conductive film forming side of the polymer film. A method for manufacturing a transparent conductive film.
(2)バック層がIn_2O_3、SnO_2、Al_
2O_3、ZrO_2、CuS、RuO、SiO_2、
TiO_2、ZnO、ZnS、MgF、An、Ag、P
d、Ptのうち少なくとも1種類を主成分とする特許請
求の範囲第1項記載の透明導電性フィルムの製造方法。
(2) Back layer is In_2O_3, SnO_2, Al_
2O_3, ZrO_2, CuS, RuO, SiO_2,
TiO_2, ZnO, ZnS, MgF, An, Ag, P
The method for producing a transparent conductive film according to claim 1, which contains at least one of Pt and Pt as a main component.
JP60093406A 1985-04-30 1985-04-30 Manufacture of transparent conductive film Granted JPS61252143A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60093406A JPS61252143A (en) 1985-04-30 1985-04-30 Manufacture of transparent conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60093406A JPS61252143A (en) 1985-04-30 1985-04-30 Manufacture of transparent conductive film

Publications (2)

Publication Number Publication Date
JPS61252143A true JPS61252143A (en) 1986-11-10
JPH0425865B2 JPH0425865B2 (en) 1992-05-01

Family

ID=14081416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60093406A Granted JPS61252143A (en) 1985-04-30 1985-04-30 Manufacture of transparent conductive film

Country Status (1)

Country Link
JP (1) JPS61252143A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009226767A (en) * 2008-03-24 2009-10-08 Mitsubishi Plastics Inc Laminated polyester film for transparent conductive film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009226767A (en) * 2008-03-24 2009-10-08 Mitsubishi Plastics Inc Laminated polyester film for transparent conductive film

Also Published As

Publication number Publication date
JPH0425865B2 (en) 1992-05-01

Similar Documents

Publication Publication Date Title
JPS59214183A (en) Heat generating transparent unit
JPS6179647A (en) Manufacture of transparent conductive laminate
JPH0215243A (en) Electrochromium type variable transmitting glass plate
JPS61252143A (en) Manufacture of transparent conductive film
JPS61176012A (en) Manufacture of transparent electrode
JP4132191B2 (en) Electrode member for resistive film type transparent touch panel
JPS61183809A (en) Transparent conductive laminate body and manufacture thereof
JP2000108244A (en) Transparent conductive film, its manufacture, and base having transparent conductive film
JP2005071901A (en) Transparent conductive laminated film
JPH02221365A (en) Production of transparent conductive laminate
JPS6057572B2 (en) liquid crystal display
JPS60131711A (en) Transparent conductive laminate
JPH01100260A (en) Manufacture of laminated body of transparent conductive film
JPS6224505A (en) Formation of light transmitting conductive film
JPS6143805B2 (en)
CN216014837U (en) Conductive film
JPH0417212A (en) Transparent electric conductive film and manufacture thereof
JPH0414705A (en) Transparent conductive film and manufacture thereof
JP3192249B2 (en) Gas and moisture barrier film and method for producing the same
JPH0345485B2 (en)
JPH0432106A (en) Transparent conductive film and its manufacture
JP3331670B2 (en) Transparent conductive film
JPH0266158A (en) Production of transparent laminate
JPS60258460A (en) Manufacture of electrically conductive transparent film
JP3027316B2 (en) Laminated film