JPS61251185A - 半導体レ−ザと変調用電気素子の複合素子 - Google Patents

半導体レ−ザと変調用電気素子の複合素子

Info

Publication number
JPS61251185A
JPS61251185A JP60094805A JP9480585A JPS61251185A JP S61251185 A JPS61251185 A JP S61251185A JP 60094805 A JP60094805 A JP 60094805A JP 9480585 A JP9480585 A JP 9480585A JP S61251185 A JPS61251185 A JP S61251185A
Authority
JP
Japan
Prior art keywords
semiconductor laser
semiconductor
type
fet
mis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60094805A
Other languages
English (en)
Japanese (ja)
Inventor
Yutaka Mihashi
三橋　豊
Yutaka Nagai
豊 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60094805A priority Critical patent/JPS61251185A/ja
Priority to US06/856,937 priority patent/US4733399A/en
Priority to DE19863614463 priority patent/DE3614463A1/de
Publication of JPS61251185A publication Critical patent/JPS61251185A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP60094805A 1985-04-30 1985-04-30 半導体レ−ザと変調用電気素子の複合素子 Pending JPS61251185A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60094805A JPS61251185A (ja) 1985-04-30 1985-04-30 半導体レ−ザと変調用電気素子の複合素子
US06/856,937 US4733399A (en) 1985-04-30 1986-04-25 Semiconductor laser device having integral optical output modulator
DE19863614463 DE3614463A1 (de) 1985-04-30 1986-04-29 Halbleiterlaservorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60094805A JPS61251185A (ja) 1985-04-30 1985-04-30 半導体レ−ザと変調用電気素子の複合素子

Publications (1)

Publication Number Publication Date
JPS61251185A true JPS61251185A (ja) 1986-11-08

Family

ID=14120270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60094805A Pending JPS61251185A (ja) 1985-04-30 1985-04-30 半導体レ−ザと変調用電気素子の複合素子

Country Status (3)

Country Link
US (1) US4733399A (enExample)
JP (1) JPS61251185A (enExample)
DE (1) DE3614463A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5091799A (en) * 1990-10-31 1992-02-25 The United States Of America As Represented By The Secretary Of The Navy Buried heterostructure laser modulator
US5283447A (en) * 1992-01-21 1994-02-01 Bandgap Technology Corporation Integration of transistors with vertical cavity surface emitting lasers
US7288821B2 (en) * 2005-04-08 2007-10-30 International Business Machines Corporation Structure and method of three dimensional hybrid orientation technology

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55117295A (en) * 1979-03-02 1980-09-09 Hitachi Ltd Semiconductor light emitting element and fabricating the same
JPS5681994A (en) * 1979-12-07 1981-07-04 Seiji Yasu Field effect type semiconductor laser and manufacture thereof
JPS5710992A (en) * 1980-06-24 1982-01-20 Sumitomo Electric Ind Ltd Semiconductor device and manufacture therefor
NL8004912A (nl) * 1980-08-29 1982-04-01 Bogey Bv Licht emitterende halfgeleiderstructuur.
US4608696A (en) * 1983-06-08 1986-08-26 Trw Inc. Integrated laser and field effect transistor
DE3411314A1 (de) * 1984-03-27 1985-10-03 Siemens AG, 1000 Berlin und 8000 München Laserdioden-array

Also Published As

Publication number Publication date
DE3614463C2 (enExample) 1989-07-20
DE3614463A1 (de) 1986-10-30
US4733399A (en) 1988-03-22

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