JPS61248469A - Color solid-state image pickup device - Google Patents
Color solid-state image pickup deviceInfo
- Publication number
- JPS61248469A JPS61248469A JP60089309A JP8930985A JPS61248469A JP S61248469 A JPS61248469 A JP S61248469A JP 60089309 A JP60089309 A JP 60089309A JP 8930985 A JP8930985 A JP 8930985A JP S61248469 A JPS61248469 A JP S61248469A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- spectral characteristics
- conversion region
- color filter
- image pickup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Optical Filters (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はカラー固体撮像装置に関し、特にカラーフィル
タを積層したオンウェハ型カラー固体撮像装置に関する
。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a color solid-state imaging device, and more particularly to an on-wafer type color solid-state imaging device in which color filters are laminated.
（従来の技術）
従来、カラー用固体撮像装置は、半導体基板上に形成し
た特定波長光の選択透過性をもたないＰＮ接合を用いた
光電変換領域で形成した固体撮像装置上に、ガラス基板
上に形成した特定波長光の選択透過性を有するカラーフ
ィルタ層を貼り合せて形成されていた。しかしながら、
この貼り合せ方式においては、固体撮像装置一つ一つに
カラーフィルタを高精度で目合せするという作業を要し
量産性に適さないという問題があった。この問題点を解
決するために、半導体ウェハ上に直接カラーフィルタを
積層するオンウェハ型力２−固体撮像装置が試みられる
ようになった。(Prior Art) Conventionally, a color solid-state imaging device has a glass substrate on a solid-state imaging device formed of a photoelectric conversion region using a PN junction, which is formed on a semiconductor substrate and does not have selective transmittance for light of a specific wavelength. It was formed by bonding a color filter layer formed thereon that has selective transmittance for light of a specific wavelength. however,
This bonding method requires the work of aligning the color filters to each solid-state imaging device with high precision, which poses a problem that it is not suitable for mass production. In order to solve this problem, attempts have been made to develop an on-wafer type solid-state imaging device in which color filters are directly stacked on a semiconductor wafer.
（発明が解決しようとする問題点）
しかしながら、カラーフィルタの分光特性に関し、従来
のガラス基板上形成においては、カラーフィルタ製造途
中及びカラーフィルタ製造後にかかわらず力２−フィル
タの分光特性の測定は可能である。一方、オンウェハ型
カラー固体撮像装置においては製造途中でのフィルタ分
光特性の測定はできない。即ち、シリコン基板上に積層
されるオンウェハ型カラー固体撮像装置においてはシリ
コン基板従来のガラス基板はどの光透過性をもちえない
為に製品完成後にカラーフィルタを透過した光による光
電変換領域での信号電荷発生からカー）−フィルタの分
光特性を推定する方法がとられている。(Problem to be Solved by the Invention) However, regarding the spectral characteristics of color filters, in the conventional formation on a glass substrate, it is possible to measure the spectral characteristics of the filter both during and after manufacturing the color filter. It is. On the other hand, in an on-wafer type color solid-state imaging device, it is not possible to measure the filter spectral characteristics during the manufacturing process. In other words, in an on-wafer type color solid-state imaging device stacked on a silicon substrate, since the silicon substrate and the conventional glass substrate do not have any light transmittance, the signal in the photoelectric conversion region due to the light transmitted through the color filter after the product is completed is A method is used to estimate the spectral characteristics of a Kerr filter from charge generation.
本発明の目的は、力２−フィルタ製造途中においてカラ
ーフィルタの分光特性を推定できるカラー固体撮像装置
を提供することにある。An object of the present invention is to provide a color solid-state imaging device that can estimate the spectral characteristics of a color filter during the process of manufacturing the filter.
（問題点を解決するための手段）
本発明の力２−固体撮像装置は、半導体基板上に行列状
に配置された光電変換領域および信号伝達領域と、信号
増幅器と、前記光電変換領域上に特定の波長の光を選択
的に透過するフィルタを任意の種類、規則正しく配置し
て構成されるオンウェハ型のカラー固体撮像装置におい
て、該固体撮像装置の周辺に前記光電変換領域と同一構
造を有する分光特性測定用光電変換領域を設け、該分光
特性測定用光電変換領域上に前記フィルタと同等のフィ
ルタを積層し、かつ前記分光特性測定用光電変換領域で
光電変換された信号電荷を増幅する増幅器を設けること
によ抄構成される。(Means for Solving the Problems) A second feature of the present invention - a solid-state imaging device includes photoelectric conversion regions and signal transmission regions arranged in a matrix on a semiconductor substrate, a signal amplifier, and In an on-wafer color solid-state imaging device configured by regularly arranging any type of filter that selectively transmits light of a specific wavelength, a spectroscopic device having the same structure as the photoelectric conversion region around the solid-state imaging device. A photoelectric conversion region for measuring characteristics is provided, a filter equivalent to the filter is laminated on the photoelectric conversion region for measuring spectral characteristics, and an amplifier for amplifying signal charges photoelectrically converted in the photoelectric conversion region for measuring spectral characteristics is provided. The abstract is composed by providing.
（実施例） 次に、本発明の実施例について図面を用いて説明する。(Example) Next, embodiments of the present invention will be described using the drawings.
第１図は本発明の一実施例の平面図である。FIG. 1 is a plan view of one embodiment of the present invention.
半導体基板１には固体撮像装置の撮像用絵素（光電変換
領域、信号伝達領域及び信号増幅器にて構成される）領
域２を配置し、更に本発明によって付加するカラーフィ
ルタ分光特性測定用装置３−１ 、３−２ 、３−３を
半導体基板１の周辺部に配置する。ここで上記のカラー
フィルタ分光特性測定用装置は、例えば、カラーフィル
タを緑、赤、青の３色で形成する原色タイプの場合には
、それぞれの色に対応した３種類３−１ 、３−２ 、
３−３が好ましい。また、カラーフィルタが４色で構成
される場合には、そｎぞｎのフィルタ特性別に４つのカ
ラーフィルタ分光特性測定用装置金膜けるのが好ましい
。An imaging pixel (consisting of a photoelectric conversion region, a signal transmission region, and a signal amplifier) region 2 of a solid-state imaging device is arranged on a semiconductor substrate 1, and a color filter spectral characteristic measurement device 3 added according to the present invention is further arranged. -1 , 3-2 , and 3-3 are arranged around the semiconductor substrate 1 . Here, for example, in the case of a primary color type in which the color filter is formed with three colors of green, red, and blue, the above-mentioned color filter spectral characteristic measuring device has three types 3-1, 3- 2,
3-3 is preferred. Further, when the color filter is composed of four colors, it is preferable to use four color filter spectral characteristic measuring devices for each filter characteristic.
第２図（ａ）、Φ）は第１図に示すカラーフィルタ分光
特性測定用装置の一例の構成を説明するための模式的平
面図及び断面図である。FIG. 2(a), Φ) is a schematic plan view and a sectional view for explaining the configuration of an example of the color filter spectral characteristic measuring device shown in FIG. 1.
半導体基板１に分光特性測定用光電変換領域４、拡散層
７を形成し、また、絶縁膜を介してトランス７アゲート
６を設ける。そして、分光特性測定用光電変換領域４の
上に絶縁膜を介してカラーフィルタ５を積層する。拡散
層７への信号電荷による電圧変化の検出回路として前記
拡散層７のリセヤト用トランジスタ１０および拡散層７
の電圧変化を一段のソースフォロアで検出する検出用ト
ランジスタ１１および１２を配置する。これらのトラン
ジスタ１０〜１２で増幅器８を構成する。尚、分光特性
測定用光電変換領域４は絵素領域２内の光電変換領域と
同じ構造にする。A photoelectric conversion region 4 for measuring spectral characteristics and a diffusion layer 7 are formed on a semiconductor substrate 1, and a transformer 7 and an agate 6 are provided via an insulating film. Then, a color filter 5 is laminated on the photoelectric conversion region 4 for measuring spectral characteristics with an insulating film interposed therebetween. The reset transistor 10 of the diffusion layer 7 and the diffusion layer 7 serve as a detection circuit for a voltage change due to a signal charge applied to the diffusion layer 7.
Detection transistors 11 and 12 are arranged to detect a voltage change in the voltage using a single source follower. These transistors 10 to 12 constitute an amplifier 8. The photoelectric conversion area 4 for measuring spectral characteristics has the same structure as the photoelectric conversion area in the picture element area 2.
このような構造にすると、カラーフィルタ５を透過して
きた光は分光特性測定用光電変換領域４で電荷に変換さ
ｎｌこの電荷は増幅器８を通して電気信号として取出さ
れる。即ち、分光特性を電気的に検出することが可能と
なる。従って、オンウェハ型のカラー固体撮像装置の製
造工程の一つの工程であるカラーフィルタの製造工程途
中においてカッ−フィルタの分光特性が推定でき、早期
に分光特性の適否を判断することが可能となる。With this structure, the light transmitted through the color filter 5 is converted into an electric charge in the photoelectric conversion region 4 for measuring spectral characteristics, and this electric charge is extracted through the amplifier 8 as an electric signal. That is, it becomes possible to electrically detect the spectral characteristics. Therefore, the spectral characteristics of the cut filter can be estimated during the color filter manufacturing process, which is one of the steps in the on-wafer type color solid-state imaging device manufacturing process, and it is possible to determine whether the spectral characteristics are appropriate at an early stage.
さらにまた、ウェハ状態での特性検査が可能となるばか
りでなくウェハの位置及びウニへ間の特性変動などの測
定も容易となる。Furthermore, it is not only possible to inspect the characteristics in the wafer state, but also to easily measure the position of the wafer and the variation in characteristics between the wafers.
上記実施例において、増幅器８は１段のソースフォロア
で構成したが、増幅器８はその他の回路で構成しても良
いことはもちろんである。また分光特性測定用光電変換
領域の大きさも絵素部の光電変換領域と同じ形状にする
のが好ましいが安定した信号を得る為に大きくしても良
い。In the above embodiment, the amplifier 8 is configured with a one-stage source follower, but it goes without saying that the amplifier 8 may be configured with other circuits. Further, it is preferable that the size of the photoelectric conversion area for measuring spectral characteristics is the same as that of the photoelectric conversion area of the picture element portion, but it may be made larger in order to obtain a stable signal.
（発明の効果）
以上説明したように、本発明によれば、カラーフィルタ
製造途中においてカラーフィルタの分光特性を推定でき
、早期に分光特性の適否を判断することができるカラー
固体撮像装置を得ることができる。(Effects of the Invention) As described above, according to the present invention, it is possible to obtain a color solid-state imaging device that can estimate the spectral characteristics of a color filter during the manufacturing process of the color filter, and can determine the suitability of the spectral characteristics at an early stage. I can do it.
第１図は本発明の一実施例の平面図、第２図（ａ）。
（ｂ）は第１図に示すカラーフィルタ分光特性測定用装
置の一例の構成を説明するための模式的平面図及び断面
図である。
１・・・・・・半導体基板、２・・・・・・絵素領域、
３−１．３−２．３−３・・・・・・カラーフィルタ分
光特性測定用装置、４・・・・・・分光特性測定用光電
変換領域、５・・・・・・カラーフィルタ、６・・・・
・・トランス７アゲート、７・・・・・・拡散層、８・
・・・・・増幅器、９・・・・・・出力端子、１０・・
・・・・リセット用トランジスタ、１１．１２・・・・
・・検出用トランジスタ。
墾２図FIG. 1 is a plan view of an embodiment of the present invention, and FIG. 2(a) is a plan view of an embodiment of the present invention. (b) is a schematic plan view and a cross-sectional view for explaining the configuration of an example of the device for measuring color filter spectral characteristics shown in FIG. 1; 1... Semiconductor substrate, 2... Picture element area,
3-1.3-2.3-3... Apparatus for measuring color filter spectral characteristics, 4... Photoelectric conversion region for measuring spectral characteristics, 5... Color filter, 6...
...Transformer 7 agate, 7...Diffusion layer, 8.
...Amplifier, 9...Output terminal, 10...
...Reset transistor, 11.12...
...Detection transistor. plot 2
Claims (1)
び信号伝達領域と、信号増幅器と、前記光電変換領域上
に特定の波長の光を選択的に透過するフィルタを任意の
種類、規則正しく配置して構成されるオンウェハ型のカ
ラー固体撮像装置において、該固体撮像装置の周辺に前
記光電変換領域と同一構造を有する分光特性測定用光電
変換領域を設け、該分光特性測定用光電変換領域上に前
記フィルタと同等のフィルタを積層し、かつ前記分光特
性測定用光電変換領域で光電変換された信号電荷を増幅
する増幅器を設けたことを特徴とするカラー固体撮像装
置。A photoelectric conversion region and a signal transmission region arranged in a matrix on a semiconductor substrate, a signal amplifier, and a filter that selectively transmits light of a specific wavelength are regularly arranged in any type on the photoelectric conversion region. In the on-wafer type color solid-state imaging device configured, a photoelectric conversion region for measuring spectral characteristics having the same structure as the photoelectric conversion region is provided around the solid-state imaging device, and the filter is placed on the photoelectric conversion region for measuring spectral characteristics. What is claimed is: 1. A color solid-state imaging device comprising: a stack of filters equivalent to the above, and an amplifier for amplifying signal charges photoelectrically converted in the photoelectric conversion region for measuring spectral characteristics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60089309A JPS61248469A (en) | 1985-04-25 | 1985-04-25 | Color solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60089309A JPS61248469A (en) | 1985-04-25 | 1985-04-25 | Color solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61248469A true JPS61248469A (en) | 1986-11-05 |
Family
ID=13967062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60089309A Pending JPS61248469A (en) | 1985-04-25 | 1985-04-25 | Color solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61248469A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02114664A (en) * | 1988-10-25 | 1990-04-26 | Dainippon Printing Co Ltd | Color image sensing element and manufacture thereof |
| JP2017181361A (en) * | 2016-03-31 | 2017-10-05 | パイオニア株式会社 | Wavelength selection device and spectroscopic measurement device |
-
1985
- 1985-04-25 JP JP60089309A patent/JPS61248469A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02114664A (en) * | 1988-10-25 | 1990-04-26 | Dainippon Printing Co Ltd | Color image sensing element and manufacture thereof |
| JP2017181361A (en) * | 2016-03-31 | 2017-10-05 | パイオニア株式会社 | Wavelength selection device and spectroscopic measurement device |
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