JPS61247036A - Apparatus and method for forming insulative thin film - Google Patents
Apparatus and method for forming insulative thin filmInfo
- Publication number
- JPS61247036A JPS61247036A JP8786685A JP8786685A JPS61247036A JP S61247036 A JPS61247036 A JP S61247036A JP 8786685 A JP8786685 A JP 8786685A JP 8786685 A JP8786685 A JP 8786685A JP S61247036 A JPS61247036 A JP S61247036A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film forming
- vapor deposition
- raw material
- electrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 150000002500 ions Chemical class 0.000 claims abstract description 24
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 230000008021 deposition Effects 0.000 claims abstract description 3
- 238000007740 vapor deposition Methods 0.000 claims description 39
- 239000002994 raw material Substances 0.000 claims description 34
- 238000000427 thin-film deposition Methods 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008674 spewing Effects 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 7
- 238000010884 ion-beam technique Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 2
- YAFKGUAJYKXPDI-UHFFFAOYSA-J lead tetrafluoride Chemical compound F[Pb](F)(F)F YAFKGUAJYKXPDI-UHFFFAOYSA-J 0.000 description 11
- 238000000605 extraction Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000007737 ion beam deposition Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 230000009918 complex formation Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、絶縁性薄膜形成装置あそびその方法に関し
、特に絶縁性薄膜を蒸着形成する場合の膜質の均一化に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an insulating thin film forming apparatus and method thereof, and particularly relates to uniformity of film quality when forming an insulating thin film by vapor deposition.
一般に、クラスタ・イオンビーム蒸着法による薄膜蒸着
方法は、真空槽内において、基板に蒸着すべき物質の蒸
気を噴出して該蒸気中の多数の原子が緩く結合したクラ
スタ（塊状原子集団）を生成し、該クラスタに電子のシ
ャワーを浴びせて該クラスタをそのうち１個の原子がイ
オン化されたクラスタ・イオンにし、該クラスタ・イオ
ンを加速して基板に衝突せしめ、これにより基板に薄膜
を蒸着形成する方法である。この蒸着法を用い絶絶性薄
膜形成を実施する装置として、従来第２図、第３図に示
すものがあった。第２図は従来の薄膜蒸着装置を模式的
に示す構成断面図、第３図はその主要部を一部断面で示
す斜視図である。図において、（１１は所定の真空度Ｃ
：保持された真空槽、（２）は該真空槽（１）内の排気
を行なうための排気通路で、これは図示しない真空排気
装置に接続されている。（３）は該排気通路（２）を開
閉する真空用バルブである。（４）は直径ＩＩＩＩＩ〜
２諷のノズル（４ａ）が設けられた密閉形るつぼで、こ
れには蒸着原料（５１、例えば弗化鉛（ＰＩ）Ｆりが収
容される。（６）は上記るつぼ（４）の加熱を行なうた
めの加熱用フイラメン） 、 （７１は該フィラメント
（６）からの輻射熱を遮断する熱シールド板であり、上
記るつぼ（４）、加熱用フィラメント（６）及び熱シー
ルド板（７）により、蒸着原料を上記真空槽１１１１’
９ Ｃ噴出してクラスタを生成せしめる薄膜蒸着源（８
）が形成されている。なお、（１９は上記熱シールド板
（７）を支持する絶縁支持部材、■は上記るつぼ（４）
を支持する支持台である。In general, a thin film deposition method using cluster ion beam deposition involves ejecting the vapor of a substance to be deposited onto a substrate in a vacuum chamber to generate clusters (massive atomic groups) in which many atoms in the vapor are loosely bonded. The cluster is then showered with electrons to form a cluster ion in which one atom is ionized, and the cluster ion is accelerated to collide with a substrate, thereby depositing a thin film on the substrate. It's a method. Conventionally, there are apparatuses shown in FIGS. 2 and 3 for forming an instable thin film using this vapor deposition method. FIG. 2 is a cross-sectional view schematically showing a conventional thin film deposition apparatus, and FIG. 3 is a perspective view partially showing a main part thereof in cross section. In the figure, (11 is the predetermined degree of vacuum C
: A vacuum chamber is maintained, and (2) is an exhaust passage for evacuating the inside of the vacuum chamber (1), which is connected to a vacuum evacuation device (not shown). (3) is a vacuum valve that opens and closes the exhaust passage (2). (4) is diameter III~
This is a closed crucible equipped with two nozzles (4a), which accommodates a vapor deposition raw material (51, e.g. lead fluoride (PI)).(6) heats the crucible (4). (71 is a heat shield plate that blocks radiant heat from the filament (6), and the crucible (4), heating filament (6), and heat shield plate (7) The raw material is transferred to the vacuum chamber 1111'
A thin film deposition source (8
) is formed. Note that (19 is an insulating support member that supports the heat shield plate (7), and ■ is the crucible (4)
It is a support stand that supports.
＋９１はイオン化用の熱電子（１３を放出するイオン化
フィラメント、αｌは該イオン化フィラメントＴ９１か
ら放出された熱電子０を加速する電子引き出し電極、α
υはイオン化フィラメント（９１からの輻射熱を遮断す
る熱シールド板であり、上記イオン化フィラメント（９
Ｊ、電子引き出し電極部及び熱シールド仮住υにより、
上記薄膜蒸着源１８１からのクラスタをイオン化するた
めのイオン化手段住りが形成されている。な詔、（ハ）
は熱シールド板αυを支持する絶縁支持部材である。０
は上記イオン化されたクラスタ・イオンαＱを加速して
これをイオン化されていない中性クラスタ（Ｌ！１９と
共に薄膜形成用基板（１８） Ｃ衝突させて薄膜を蒸着
させる加速手段すなわち加速電極であり、これは電子引
き出し電極Ｑｌとの間に電位を印加できる構造となって
いる。なお、（至）は１速電極（１荀を支持する絶縁支
持部材、のは基板（１ｇ＋を支持する基板ホルダー、（
２）１は該基板ホルダー圏を支持する絶縁支持部材、α
力はクラスタ・イオンｕｌと中性クラスタａ９とからな
るクラスタ・ビームである。+91 is an ionization filament that emits thermionic electrons (13) for ionization, αl is an electron extraction electrode that accelerates thermionic electrons (0) emitted from the ionization filament T91, α
υ is a heat shield plate that blocks radiant heat from the ionized filament (91);
J, due to the electron extraction electrode part and heat shield temporary residence υ,
An ionization means housing for ionizing the clusters from the thin film deposition source 181 is formed. An edict, (ha)
is an insulating support member that supports the heat shield plate αυ. 0
is an accelerating means, that is, an accelerating electrode, which accelerates the ionized cluster ion αQ and causes it to collide with the non-ionized neutral cluster (L!19) on the thin film forming substrate (18) C to deposit a thin film; This has a structure that allows a potential to be applied between it and the electron extraction electrode Ql. Note that (to) is the insulating support member that supports the 1-speed electrode (1g+), and the substrate (substrate holder that supports 1g+) (
2) 1 is an insulating support member that supports the substrate holder area, α
The force is a cluster beam consisting of cluster ions ul and neutral cluster a9.
次に動作について説明する。Next, the operation will be explained.
基板餞に弗化鉛薄膜を蒸着形成する場合について説明す
ると、まず弗化鉛【５：をるつぼ（４）内に充填し、上
記真空排気装置により真空槽１１１内の空気を排気して
該真空槽（１）円を１０ Ｔｏｒｒ程度の真空度Ｃ：す
る。次いで、加熱用フィラメント（６１に通電して発熱
せしめ、該加熱用フィラメント（６］からの輻射熱によ
り、または該フィラメント（６１から放出される熱電子
をるつぼ（４１に衝突させると、即ち電子衝撃によって
、該るつぼ（４１内の弗化鉛（５）を加熱し蒸発せしめ
る。そして該るつぼ（４１内が弗化鉛（５）の蒸気圧が
０．１〜数ＩＱＴｏｒｒ程度になる温度：：昇温すると
、ノズル（４１）から噴出した蒸気は、るつぼ（４）と
真空槽（１）との圧力差により断熱膨張してクラスタと
呼ばれる多数の原子が緩く結合した塊状原子集団となる
。To explain the case of forming a lead fluoride thin film on a substrate by vapor deposition, first, lead fluoride [5] is filled into a crucible (4), and the air in the vacuum chamber 111 is evacuated by the vacuum evacuation device to remove the vacuum. The tank (1) is vacuumed to a degree of vacuum of approximately 10 Torr. Next, the heating filament (61) is energized to generate heat, and the thermoelectrons emitted from the heating filament (6) collide with the crucible (41), that is, by electron impact. , the lead fluoride (5) in the crucible (41) is heated and evaporated.Then, the temperature is increased so that the vapor pressure of the lead fluoride (5) in the crucible (41) is about 0.1 to several IQ Torr. Then, the steam ejected from the nozzle (41) expands adiabatically due to the pressure difference between the crucible (4) and the vacuum chamber (1), and becomes a massive atomic group called a cluster, in which many atoms are loosely bonded.
このクラスタ・ビームαηは、イオン化フィラメント（
９）から電子引き出し電極Ｑｌによって引き出された熱
電子０と衝突するため、その一部のクラスタはそのうち
の１個の原子がイオン化されてクラスタ・イオンαｅと
なる。このクラスタ・イオン（１１１９は加速電極Ｉと
電子引き出し電極αｑとの間に形成された電界により適
度に加速され、イオン化されていない中性クラスタ霞が
るつぼ（４）から噴射される時運動エネルギーでもって
基板（１＆に衝突するのと共に基板αｇに衝突し、これ
により該基板（１８１上に弗化鉛薄膜が蒸着形成される
。This cluster beam αη is formed by an ionized filament (
9) collides with the thermoelectron 0 extracted by the electron extraction electrode Ql, so one atom of some of the clusters is ionized and becomes a cluster ion αe. These cluster ions (1119) are moderately accelerated by the electric field formed between the accelerating electrode I and the electron extraction electrode αq, and when the non-ionized neutral cluster haze is injected from the crucible (4), it has kinetic energy. As a result, the lead fluoride thin film is deposited on the substrate (181) by colliding with the substrate (1&) and the substrate αg.
ここで形成される薄膜の密度及び基板に対する付着力は
、加速電圧を高くしイオン電流を多くするにつれて大き
くなる。The density of the thin film formed here and the adhesion force to the substrate increase as the accelerating voltage increases and the ion current increases.
ところが、加速電圧を高くし、イオン電流を多くすると
、蒸着される薄膜が絶縁性であるため、イオンによるチ
ャージアップが生じ部分的な放電のため、膜質の均一性
がそこなわれ、例えば弗化鉛を用いた赤外線用の透過膜
Ｃついては、付着力と透過特性の両方の特性を同時に満
足するような薄膜は形成できないという問題点を有して
いた。However, when the accelerating voltage is increased and the ion current is increased, the thin film to be deposited is insulating, so charge-up due to ions occurs and partial discharge occurs, which impairs the uniformity of the film quality. The infrared transmission film C using lead has a problem in that it is impossible to form a thin film that satisfies both adhesion and transmission characteristics at the same time.
この発明は上記のような問題点を解消するためになされ
たもので、イオンを用いた蒸着Ｃ：より絶縁性薄膜を形
成する場合≦：、絶縁性薄膜上Ｃニイオンがチャージア
ップするのを防ぎ、放電が起こらないような状態を作る
ことにより、均質な絶縁性薄膜を形成する装置およびそ
の方法を提供することを目的とする。This invention was made to solve the above-mentioned problems, and it is possible to prevent the charge-up of C ions on an insulating thin film by vapor deposition using ions when forming a more insulating thin film. An object of the present invention is to provide an apparatus and method for forming a homogeneous insulating thin film by creating a condition in which no discharge occurs.
本発明に係る絶縁性薄膜形成装置は、蒸着原料を噴出す
る薄膜蒸着源、この薄膜蒸着源２：対向して配置された
薄膜形成用基板、上記蒸着原料をイオン化するイオン化
手段、イオン化された上記蒸着原料を加速して上記薄膜
形成用基板Ｃ：衝突させる加速手段、および上記薄膜形
成用基板１：電子を照射して上記イオン化された蒸着原
料のイオンによるチャージアップを減少させる電子発生
手段を真空槽内に備えたものである。An insulating thin film forming apparatus according to the present invention includes a thin film deposition source that spouts out a vapor deposition raw material, a thin film deposition source 2: a thin film forming substrate disposed opposite to each other, an ionization unit that ionizes the vapor deposition raw material, and an ionized thin film deposition source that ejects a vapor deposition raw material. An accelerating means for accelerating the vapor deposition raw material to collide with the thin film forming substrate C: and an electron generating means for irradiating electrons to reduce the charge-up due to ions of the ionized vapor deposition raw material. It is provided inside the tank.
また、本発明の別の発明に係る絶縁性薄膜形成方法は、
蒸着原料を噴出する第１の工程、噴出した上記蒸着原料
をイオン化する第２の工程、イオン化した上記蒸着原料
を薄膜形成用基板に衝突するよう１：加速する第３の工
程、および上記薄膜形成用基板冨：電子を照射して上記
イオン化した蒸着原料のイオンＣ：よるチャージアップ
を減少させる第４の工程、以上の工程を真空中で施すこ
とにより上記薄膜形成用基板に上記蒸着原料を蒸着する
ものである。Moreover, an insulating thin film forming method according to another invention of the present invention includes:
a first step of ejecting the vapor deposition raw material, a second step of ionizing the ejected vapor deposition raw material, a third step of accelerating the ionized vapor deposition raw material so that it collides with the thin film forming substrate, and the thin film formation. A fourth step of reducing the charge-up due to ions C of the ionized vapor deposition raw material by irradiating the substrate with electrons, and depositing the vapor deposition raw material on the thin film forming substrate by performing the above steps in a vacuum. It is something to do.
本発明：：おける薄膜形成用基板に照射される電子は、
上記薄膜形成用基板上におけるイオンを薄膜形成時に中
性化することにより絶縁性薄膜形成時におけるチャージ
アップを減少させ、膜質を均質化できる。The electrons irradiated onto the thin film forming substrate in the present invention:
By neutralizing the ions on the thin film forming substrate during forming the thin film, charge-up during forming the insulating thin film can be reduced and the film quality can be made homogeneous.
以下、この発明の一実施例を図をもとに説明する。第１
図において、■は電子銃であり、フィラメント（２６ａ
）とアノード（２６ｂ）からなる。■は電子引き出し電
極であり、■はこれら電子銃（２６１よび電子引き出し
電極（５）よりなる電子発生手段である。An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, ■ is an electron gun, and the filament (26a
) and an anode (26b). (2) is an electron extraction electrode, and (2) is an electron generating means consisting of these electron guns (261) and the electron extraction electrode (5).
次（−動作について説明する。Next (-Explain the operation.
クラスタ・イオンビーム住ηの発生法は従来法と同様で
あり、これと並行するかたちで電子（至）を発生させ基
板（１８１上の絶縁性薄膜形成領域全体！＝照射する。The method of generating the cluster ion beam is the same as the conventional method, and in parallel, electrons are generated and the entire insulating thin film formation region on the substrate (181) is irradiated.
電子ｃ！Ｉを発生するｆ二はフィラメント（２６ａ）を
加熱し、このフィラメント（２６ａ）とアノード（２６
ｂ）間に数ｌＯ〜数１００ｖ程度の電圧を印加すればよ
く、更に電子引き出し電極−とフィラメント（２６ｂ）
間Ｃ：も数１０〜１０００ Ｖ程度の電圧を印加すれば
、電子（至）は基板ａｌ上の絶縁性薄膜形成領域全体に
照射される。Electronic c! f2 that generates I heats the filament (26a), and this filament (26a) and the anode (26
b) It is sufficient to apply a voltage of several lO to several hundreds of volts between the electron extraction electrode and the filament (26b).
When a voltage of about several 10 to 1000 V is applied, electrons are irradiated onto the entire insulating thin film formation region on the substrate Al.
電子（至）の照射は絶縁性薄膜蒸着中に同時Ｃ：行なわ
れ、かつクラスタ・イオンｔｔｅの量と同量もしくはそ
れ以上の量の電子（ハ）を照射するのが望ましく、基板
αａ上に形成される絶縁性薄膜上でのチャージアップを
防ぎ、放電か発生し得ない状態で絶縁性薄膜を形成する
ことができる。The irradiation of electrons (C) is carried out simultaneously during the deposition of the insulating thin film, and it is desirable to irradiate the same amount of electrons (C) as the amount of cluster ions tte or more. Charge-up on the insulating thin film to be formed can be prevented, and the insulating thin film can be formed in a state where discharge cannot occur.
第１表に本方法を用いて硫化亜鉛基板上に形成した弗化
鉛薄膜の形成条件及び形成された薄膜の特性を従来の方
法と比較して示す。表から明らかなように、本方法を用
いることで、弗化錯形成時Ｃ：弗化鉛薄膜上でのイオン
のチャージアップが解消され、基板全面にわたり均質な
薄膜が形成され、付着力と透過特性の両方の特性を同時
（−満足する弗化鉛薄膜を得ることができ、この薄膜は
光学デバイスなどに用いることができる。Table 1 shows the formation conditions of a lead fluoride thin film formed on a zinc sulfide substrate using this method and the characteristics of the formed thin film in comparison with a conventional method. As is clear from the table, by using this method, the charge-up of ions on the lead fluoride thin film during fluoride complex formation is eliminated, and a homogeneous thin film is formed over the entire surface of the substrate, resulting in improved adhesion and permeability. It is possible to obtain a lead fluoride thin film that satisfies both properties simultaneously, and this thin film can be used for optical devices and the like.
第 １ 表
なお、上記実施例では噴出された蒸着原料がクラスタを
形成しているクラスタイオンビーム蒸着法にこの発明を
適用した場合について説明したが、例えばイオンビーム
デポジションなど他のイオンビームを用いた蒸着法にも
適用できるのは明白である。Table 1 Note that in the above embodiments, the present invention was applied to a cluster ion beam evaporation method in which the ejected evaporation raw material forms clusters, but other ion beams such as ion beam deposition may also be used. It is obvious that the present invention can also be applied to other vapor deposition methods.
また、上記実施例では蒸着原料が弗化鉛の場合について
説明したが、例えば二酸化硅素や亜鉛など他の絶縁物で
あっても上記実施例と同様の効果が得られる。Further, in the above embodiments, the case where the vapor deposition raw material is lead fluoride has been described, but the same effects as in the above embodiments can be obtained even if other insulating materials such as silicon dioxide or zinc are used.
以上のように、この発明によれば、蒸着原料を噴出する
薄膜蒸着源、この薄膜蒸着源に対向して配置された薄膜
形成用基板、上記蒸着原料をイオン化するイオン手段、
イオン化された上記蒸着原料を加速しで上記薄膜形成用
基板に衝突させる加速手段、および上記薄膜形成用基板
に電子を照射して上記イオン化された蒸着原料のイオン
によるチャージアップを減少させる電子発生手段を真空
槽内Ｃ：備えたので、均質な絶縁性薄膜が得られる効果
がある。As described above, according to the present invention, there is provided a thin film deposition source that spouts out a vapor deposition raw material, a thin film forming substrate disposed opposite to the thin film deposition source, an ion means for ionizing the vapor deposition raw material,
Accelerating means for accelerating the ionized vapor deposition raw material to collide with the thin film forming substrate; and electron generating means for irradiating the thin film forming substrate with electrons to reduce charge-up of the ionized vapor deposition raw material due to ions. C: in the vacuum chamber, it is effective to obtain a homogeneous insulating thin film.
また、本発明の別の発明によれば、蒸着原料を噴出する
第１の工程、噴出した上記蒸着原料をイオン化する第２
の工程、イオン化した上記蒸着原料を薄膜形成用基板に
衝突するように加速する第３の工程、および上記薄膜形
成用基板に電子を照射して上記イオン化した蒸着原料の
イオンによるチャージアップを減少させる第４の工程、
以上の工程を真空中で施すことにより上記薄膜形成用基
板に上記蒸着原料を蒸着するので、均質な絶縁性薄膜が
得られる効果がある。According to another aspect of the present invention, the first step is to blow out the vapor deposition raw material, and the second step is to ionize the spouted vapor deposition material.
a third step of accelerating the ionized vapor deposition raw material so that it collides with the thin film forming substrate, and irradiating the thin film forming substrate with electrons to reduce charge-up of the ionized vapor deposition raw material due to ions. The fourth step,
By carrying out the above steps in a vacuum, the vapor deposition raw material is vapor-deposited onto the thin film forming substrate, so that a homogeneous insulating thin film can be obtained.
第１図はこの発明の一実施例を示す構成断面図、第２図
は従来の絶縁性薄膜形成装置を示す構成断面図、第３図
は第２図の主要部を一部断面で示す斜視図である。
図において、［１１は真空槽、（４）は密閉形るつぼ、
（５）は蒸着原料、（６）は加熱用フィラメント、（７
）は熱シールド板、（８１は薄膜蒸着源、１９１はイオ
ン化フィラメント、Ｑ（１は電子引き出し電極、αυは
熱シールド板、αりはイオン化手段、Ｉは加速電極、（
１８１は薄膜形成用基板、■は電子銃、（２）は電子引
き出し電極、（ハ）は電子発生手段、（至）は電子であ
る。
なお、各図中同一符号は同一または相当部分を示すもの
とする。FIG. 1 is a cross-sectional view showing an embodiment of the present invention, FIG. 2 is a cross-sectional view showing a conventional insulating thin film forming apparatus, and FIG. 3 is a perspective view partially showing the main parts of FIG. 2. It is a diagram. In the figure, [11 is a vacuum chamber, (4) is a closed crucible,
(5) is a vapor deposition raw material, (6) is a heating filament, (7
) is a heat shield plate, (81 is a thin film deposition source, 191 is an ionization filament, Q (1 is an electron extraction electrode, αυ is a heat shield plate, α is an ionization means, I is an accelerating electrode, (
181 is a substrate for forming a thin film, (2) is an electron gun, (2) is an electron extraction electrode, (C) is an electron generating means, and (to) is an electron. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (6)
に対向して配置された薄膜形成用基板、上記蒸着原料を
イオン化するイオン化手段、イオン化された上記蒸着原
料を加速して上記薄膜形成用基板に衝突させる加速手段
、および上記薄膜形成用基板に電子を照射して上記イオ
ン化された蒸着原料のイオンによるチャージアップを減
少させる電子発生手段を真空槽内に備えた絶縁性薄膜形
成装置。(1) A thin film deposition source that spouts out a vapor deposition source, a thin film forming substrate placed opposite to the thin film deposition source, an ionization unit that ionizes the vapor deposition raw material, and an ionized vapor deposition source that is accelerated to form the thin film. An insulating thin film forming apparatus comprising, in a vacuum chamber, an accelerating means for colliding the thin film forming substrate with electrons, and an electron generating means for irradiating the thin film forming substrate with electrons to reduce charge-up due to ions of the ionized vapor deposition raw material.
許請求の範囲第１項記載の絶縁性薄膜形成装置。(2) The insulating thin film forming apparatus according to claim 1, wherein the ejected vapor deposition raw material forms clusters.
れた蒸着原料の量以上である特許請求の範囲第１項また
は第２項記載の絶縁性薄膜形成装置。(3) The insulating thin film forming apparatus according to claim 1 or 2, wherein the amount of electrons irradiated onto the thin film forming substrate is greater than or equal to the amount of ionized vapor deposition raw material.
着原料をイオン化する第２の工程、イオン化した上記蒸
着原料を薄膜形成用基板に衝突するように加速する第３
の工程、および上記薄膜形成用基板に電子を照射して上
記イオン化した蒸着原料のイオンによるチャージアップ
を減少させる第４の工程、以上の工程を真空中で施すこ
とにより上記薄膜形成用基板に上記蒸着原料を蒸着する
絶縁性薄膜形成方法。(4) A first step of spewing out the vapor deposition raw material, a second step of ionizing the spouted vapor deposition raw material, and a third step of accelerating the ionized vapor deposition raw material so that it collides with the thin film forming substrate.
and a fourth step of irradiating the thin film forming substrate with electrons to reduce charge-up due to ions of the ionized vapor deposition raw material. By performing the above steps in a vacuum, the thin film forming substrate has the above described A method for forming an insulating thin film by evaporating a deposition raw material.
請求の範囲第４項記載の絶縁性薄膜形成方法。(5) The insulating thin film forming method according to claim 4, wherein the ejected vapor deposition raw material forms clusters.
た蒸着原料の量以上である特許請求の範囲第４項または
第５項記載の絶縁性薄膜形成方法。(6) The insulating thin film forming method according to claim 4 or 5, wherein the amount of electrons irradiated onto the thin film forming substrate is greater than or equal to the amount of ionized vapor deposition raw material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8786685A JPS61247036A (en) | 1985-04-24 | 1985-04-24 | Apparatus and method for forming insulative thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8786685A JPS61247036A (en) | 1985-04-24 | 1985-04-24 | Apparatus and method for forming insulative thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61247036A true JPS61247036A (en) | 1986-11-04 |
Family
ID=13926797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8786685A Pending JPS61247036A (en) | 1985-04-24 | 1985-04-24 | Apparatus and method for forming insulative thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61247036A (en) |
-
1985
- 1985-04-24 JP JP8786685A patent/JPS61247036A/en active Pending
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