JPS612428A - Digital/analog converter - Google Patents

Digital/analog converter

Info

Publication number
JPS612428A
JPS612428A JP12172184A JP12172184A JPS612428A JP S612428 A JPS612428 A JP S612428A JP 12172184 A JP12172184 A JP 12172184A JP 12172184 A JP12172184 A JP 12172184A JP S612428 A JPS612428 A JP S612428A
Authority
JP
Japan
Prior art keywords
bits
ladder
current
buffer amplifier
digital
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12172184A
Other languages
Japanese (ja)
Inventor
Shinichi Hayashi
林 晋一
Kenji Maio
健二 麻殖生
Masao Hotta
正生 堀田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12172184A priority Critical patent/JPS612428A/en
Publication of JPS612428A publication Critical patent/JPS612428A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve a nonlinear error or monotonousness without increasing chip size of the area of an IC by connecting a buffer amplifier group between an R-2R ladder consisting of low-order n bits and a current switch group or changing the ratio of the resistance values of the uppermost two resistors of an R-2R ladder resistor consisting of upper m bits so that the nonlinear error (monotonousness) is improved. CONSTITUTION:The buffer amplifiers 4 having the same shape are inserted between the R-2R ladder consisting of the low-order n bits and the current switches as shown in a broken line. Consequently, the nonlinear error is not deteriorated even if the high-order n bits are switched. The resistance values of two resistors R1, R2 shown in the broken line out of the R-2R ladder resistor consisting of upper m bits are set to a specific ratio.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、ディジタルアナログ変換器(以下、DA変換
器と記す)に関し、特に、1チツプIC化に適し、信号
帯域が200MHz以上の高速DA変換器に関する。
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a digital-to-analog converter (hereinafter referred to as a DA converter), and is particularly suitable for use in a single-chip IC, and is suitable for high-speed DA conversion with a signal band of 200 MHz or more. Concerning vessels.

〔発明の背景〕[Background of the invention]

従来のDA変換器としては、例えば、R−2R抵抗ラダ
ー形のもの、あるいは、等電流加算形のもの等が用いら
れている。特に、第1図に示すように、上位mビットが
電流加算形で、下位nビットがR−2Rラダー形の折衷
型が、高速性・低グリッチの観点から、良く使用されて
いる。同図は、(m+n)ビットのディジタル入力を加
えて、アナログ出力を取り出すものである。上位mビッ
トディジタル入力は、セグメントデコーダ1により、(
2”−1)個の電流スイッチを順次オフ状態からオン状
態へ切り替えていく。ディジタル入カバターンに応じて
、アナログ出力が得られる。下位nビットディジタル入
力は、ヒグメントデコーダと同じ遅延時間を持つバッフ
ァ2を経由して、n個の電流スイッチを任意にオフ状態
からオン状態へ切替えていく。ディジタル入カバターン
に応じて、R−2Rラダー抵抗網を経由してアナログ出
力が得られる。同図のDA変換器の利点は5次のとおり
である。
As a conventional DA converter, for example, an R-2R resistance ladder type or an equal current addition type is used. In particular, as shown in FIG. 1, a compromise type in which the upper m bits are of the current addition type and the lower n bits are of the R-2R ladder type is often used from the viewpoint of high speed and low glitch. In the figure, (m+n) bits of digital input are added and an analog output is taken out. The upper m-bit digital input is processed by segment decoder 1 as (
2"-1) current switches are sequentially switched from off to on. Analog output is obtained according to the digital input cover turn. The lower n-bit digital input has the same delay time as the higment decoder. The n current switches are arbitrarily switched from the off state to the on state via the buffer 2. Depending on the digital input cover turn, an analog output is obtained via the R-2R ladder resistor network. The advantages of this DA converter are as follows.

(1)R−2Rラダー抵抗網と上位2n−1個の電流ス
イッチとの間のバッファにより、ラダー抵抗網と(2”
−1)個の電流スイッチのトランジスタの寄生容量で決
まる時定数を小さくでき、高速化できる。
(1) The buffer between the R-2R ladder resistance network and the upper 2n-1 current switches connects the ladder resistance network to (2”
-1) The time constant determined by the parasitic capacitance of the transistors of the current switches can be reduced, and the speed can be increased.

(2)セグメント電流加算のため、グリッチを小さくで
きる。
(2) Glitches can be reduced due to segment current addition.

反面、バッファアンプのベース電流が混入してくるため
、上位mビットと下位nビットの切替りに誤差が入り、
非直線性誤差が悪くなり、単調性がくずれるという欠点
があった。
On the other hand, since the base current of the buffer amplifier is mixed in, an error occurs in switching between the upper m bits and the lower n bits.
This has the disadvantage that non-linearity errors become worse and monotonicity breaks down.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、バッファアンプを使用した高速DA変
換器において、チップサイズあるいはICの面積を増加
させずに、非直線性誤差あるいは単調性を向上させたD
A変換器を提供することにある。
An object of the present invention is to improve the nonlinearity error or monotonicity of a high-speed DA converter using a buffer amplifier without increasing the chip size or IC area.
The purpose of the present invention is to provide an A converter.

【発明の概要〕[Summary of the invention]

バッファアンプを使用した高速DA変換器の単調性を悪
くしている原因は、バッファアンプにある。下位nビッ
トのR−2Rラダーと電流スイッチとの間に、上記バッ
ファアンプを設けて、非直線性誤差(単調性)を良くす
る。あるいは、下位nビットのR−2Rラダー抵抗の最
上位の2つの抵抗R1とR2の比率を変えれば、非直線
性誤差(単調性)が良くなる。
The buffer amplifier is the cause of poor monotonicity in high-speed DA converters using buffer amplifiers. The buffer amplifier described above is provided between the R-2R ladder of lower n bits and the current switch to improve non-linearity error (monotonicity). Alternatively, non-linearity error (monotonicity) can be improved by changing the ratio of the two most significant resistors R1 and R2 of the R-2R ladder resistors of the lower n bits.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例と、第1図と第2図により説明
する。その前に、第1図により、その原理を説明する。
An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. Before that, the principle will be explained with reference to FIG.

同図のバッファアンプ3の所で、増幅率である。したが
って、次のようになる。
The amplification factor is shown at the buffer amplifier 3 in the figure. Therefore, it becomes as follows.

ここで、R−2Rラダーが均一に等分されているとする
と、下位nビットの2n″L、S、B、は、i6Rであ
るのに上位mビットの2″”L、S、Bこで、上位mビ
ットが切替わるごとに、理想値かだけずれることになる
。このため、上位mビットが変化する度に、非直線性誤
差が生じ、単調性を±−!−L、S、B、以内に押えら
れなくなる。2n°1〉(β+1)のとき、単調性は±
IL、S、B。
Here, if the R-2R ladder is evenly divided, the lower n bits 2n''L, S, B are i6R, but the upper m bits 2''L, S, B are i6R. Therefore, each time the upper m bits change, it will deviate by the ideal value. Therefore, every time the upper m bits change, a nonlinear error will occur, and the monotonicity will be changed to ±-!-L, S, B, it becomes impossible to press within 2n°1〉(β+1), monotonicity is ±
IL, S, B.

以上となる。この原因は、バッファアンプに流れ込むベ
ース電流ibにある。
That's all. The cause of this is the base current ib flowing into the buffer amplifier.

電流増幅率βを無限に大きくすることは不可能なので、
以下、述べる方法で単調性(非直線性誤差)を改善する
。第2図において、下位nビットのR−2Rラダーと電
流スイッチとの間に、破線に示すごとく、同一形状のバ
ッファアンプ4を挿入する。各々のバッファアンプで、
式1の関係が成立するようにする。このとき、上位mビ
ットの2h″IL、S、B、も、下位nビットの2n″
’L、S、B。
Since it is impossible to increase the current amplification factor β infinitely,
The monotonicity (nonlinearity error) is improved by the method described below. In FIG. 2, a buffer amplifier 4 having the same shape is inserted between the R-2R ladder of the lower n bits and the current switch, as shown by the broken line. With each buffer amplifier,
Make sure that the relationship in Equation 1 holds true. At this time, the upper m bits of 2h''IL, S, B, and the lower n bits of 2n''
'L, S, B.

ットが切替わっても、非直線性誤差が悪くなることはな
い。
Even if the cut is switched, the nonlinearity error will not worsen.

もう1つの改善方法として、第1図の上位mビットのR
−2Rラダー抵抗のうち、破線内に示すR2およびR2
を、次の関係が成り立つようにする。
As another improvement method, R of the upper m bits in FIG.
- Of the 2R ladder resistors, R2 and R2 shown within the broken line
Let the following relationship hold.

このとき、上位mビットの2n″L、S、B、も、下位
のnビットの2n+1L、S、B、もi、XRとなり、
上位mビットが切替わっても、非直線性誤差が悪くなる
ことはない。(式3)を書き直すと(式4)のようにな
る。
At this time, the upper m bits of 2n''L, S, B, and the lower n bits of 2n+1L, S, B become i, XR,
Even if the upper m bits are switched, the nonlinearity error does not get worse. (Formula 3) is rewritten as (Formula 4).

〔発明の効果〕〔Effect of the invention〕

本発明によれば、高速性をねらったバッファアンプによ
って生じる単調性(非直線性誤差)の悪化を、ICチッ
プサイズの増加を招かずに、R−2Rの比率の変化、あ
るいは、バッファアンプの挿入により防ぐことができる
According to the present invention, deterioration of monotonicity (non-linearity error) caused by a buffer amplifier aiming at high speed can be solved by changing the ratio of R-2R or by changing the ratio of the buffer amplifier without increasing the IC chip size. This can be prevented by insertion.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図、第2図は、本発明によるDA変換器の回路を示
す図である。 R啜、R2・・・単調性(非直線誤差)を補償する抵抗
FIGS. 1 and 2 are diagrams showing circuits of a DA converter according to the present invention. R, R2...Resistance to compensate for monotonicity (non-linear error).

Claims (1)

【特許請求の範囲】 (m+n)ビットのディジタルに入力信号のうち、上位
mビットに対しては電流出力形式のセグメント形DA変
換回路、下位nビットに対してはR−2Rラダー形DA
変換回路、その間にエミッタを上記mビットの電流出力
端子に、コレクタを下位nビットのR−2Rラダーの出
力端子に、ベースを適当な電位(Vo)に接続した1つ
のトランジスタから成るバッファアンプを設けた、組合
せ形のディジタルアナログ変換手段において、上位mビ
ットのディジタルアナログ変換の基本単位(2^n^+
^1L、S、B、L、S、B=Least Signi
fi−cant Bit)と下位nビットのディジタル
アナログ変換の基本単位(2^n^+^1L、S、B、
)との間で、バッファアンプのベース電流により生じた
誤差を補償するための回路、すなわち、 (1)下位ビットの各々のR−2Rラダーと各々の電流
スイッチとの間に、エミッタを電流スイッチに、コレク
タをR−2R抵抗に、ベースを上記電位に接続したトラ
ンジスタから成るバッファアンプを設けた手段あるいは (2)上位mビットの電流スイッチと下位nビットの電
流スイッチとの間にある2個の抵抗(R_1とR_2)
の比率をR_1/R_2=β−1/β+1(βは上記バ
ッファアンプの電流増幅率)かつR_4+R_2=2R
(R:R−2R抵抗のR抵抗)とした手段を設けたこと
を特徴とするディジタルアナログ変換器。
[Claims] Of the (m+n) bits of digital input signal, the upper m bits are processed by a current output type segment type DA converter, and the lower n bits are processed by an R-2R ladder type DA converter.
A conversion circuit, between which a buffer amplifier consisting of one transistor, whose emitter is connected to the m-bit current output terminal, whose collector is connected to the output terminal of the lower n-bit R-2R ladder, and whose base is connected to an appropriate potential (Vo), is installed. In the combined digital-to-analog conversion means provided, the basic unit of digital-to-analog conversion of the upper m bits (2^n^+
^1L, S, B, L, S, B=Least Signi
fi-cant Bit) and the basic unit of digital-to-analog conversion of the lower n bits (2^n^+^1L, S, B,
) between each R-2R ladder of the lower bits and each current switch, the emitter is connected to the current switch. (2) A buffer amplifier consisting of a transistor whose collector is connected to an R-2R resistor and whose base is connected to the above potential, or (2) two current switches between the current switch of the upper m bits and the current switch of the lower n bits. resistance (R_1 and R_2)
The ratio of R_1/R_2=β-1/β+1 (β is the current amplification factor of the above buffer amplifier) and R_4+R_2=2R
(R: R resistance of R-2R resistance).
JP12172184A 1984-06-15 1984-06-15 Digital/analog converter Pending JPS612428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12172184A JPS612428A (en) 1984-06-15 1984-06-15 Digital/analog converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12172184A JPS612428A (en) 1984-06-15 1984-06-15 Digital/analog converter

Publications (1)

Publication Number Publication Date
JPS612428A true JPS612428A (en) 1986-01-08

Family

ID=14818233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12172184A Pending JPS612428A (en) 1984-06-15 1984-06-15 Digital/analog converter

Country Status (1)

Country Link
JP (1) JPS612428A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010213222A (en) * 2009-03-12 2010-09-24 Renesas Electronics Corp Semiconductor device for signal amplification

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010213222A (en) * 2009-03-12 2010-09-24 Renesas Electronics Corp Semiconductor device for signal amplification

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