JPS61241927A - Steam drying device - Google Patents

Steam drying device

Info

Publication number
JPS61241927A
JPS61241927A JP8249385A JP8249385A JPS61241927A JP S61241927 A JPS61241927 A JP S61241927A JP 8249385 A JP8249385 A JP 8249385A JP 8249385 A JP8249385 A JP 8249385A JP S61241927 A JPS61241927 A JP S61241927A
Authority
JP
Japan
Prior art keywords
ipa
liquid
processing tank
steam drying
steam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8249385A
Other languages
Japanese (ja)
Inventor
Hiroto Nagatomo
長友 宏人
Tetsuya Takagaki
哲也 高垣
Toshio Nonaka
野中 利夫
Susumu Nanko
進 南光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Tokyo Electronics Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tokyo Electronics Co Ltd, Hitachi Ltd filed Critical Hitachi Tokyo Electronics Co Ltd
Priority to JP8249385A priority Critical patent/JPS61241927A/en
Publication of JPS61241927A publication Critical patent/JPS61241927A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Solid Materials (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To contrive the saving of usage of a liquid substance and the improvement in safety by providing a heating device for controlling the temperature inside the lower side of a processing tank to a predetermined value and arranging at least the processed material which is to be steam-dried between the upper part and the lower part side of the process tank. CONSTITUTION:Isopropyl alcohol (IPA) of 100wt% concentration is put in a process tank 11 from a supply pipe 29 and is contained a liquid collection plate 18. The wafer 27 mounted in a cartridge 28 and arranged in the above is steam- dried. The pure water deposited on the wafer 27 or the cartridge 28 take in IPA and evaporate upward, where those are cooled by a cooling device 13 and are liquefied, or the pure water take into IPA and falls downward. As a result, the concentration of the IPA contained in the liquid accepting part 18a of the liquid collection plate 18 is thinned gradually. The IPA vapor steam- dries the wafer 27 and the cartridge 28 in the above and the vapor is cooled by the cooling device 13 and liquefied and falls. The IPA is thus circulated constantly from liquid to gas, from gas to liquid repeatedly, thereby steam- drying the wafer 27 and the cartridge 28.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は、蒸気乾燥装置に関し、特にイソプロピルアル
コール(以下、IPAと略記する。)やフロンなどの蒸
気を用いて高清浄にクエハなどの被処理部材を乾燥させ
る蒸気乾燥装置に関するものである。
[Detailed Description of the Invention] [Technical Field] The present invention relates to a steam drying device, and in particular, to a steam drying device for drying workpieces such as quenchers with high purity using steam such as isopropyl alcohol (hereinafter abbreviated as IPA) or Freon. This invention relates to a steam drying device for drying.

〔背景技術〕[Background technology]

LSIの製造プルセスではウェハを水洗浄することが多
く行なわれる。たとえば、ウェハに形成したポリシリコ
ン層にシん処理を施してポリシリコン抵抗を調整する場
合におけるそのシん処理前にウェハの水洗浄が行なわれ
る。またCVD法によるナイトライド(Si8N4)膜
やポリシリコン族の形成前にも水洗浄が行なわれる。こ
れらの洗浄後、クエハをきれいに乾燥させる必要がある
。その乾燥装置として従来第3図に示すような蒸気乾燥
装置がある。
In the LSI manufacturing process, wafers are often washed with water. For example, when performing a thinning process on a polysilicon layer formed on a wafer to adjust the polysilicon resistance, the wafer is washed with water before the thinning process. Water cleaning is also performed before forming a nitride (Si8N4) film or polysilicon film by the CVD method. After these washes, the queha needs to be thoroughly dried. As a drying device, there is a conventional steam drying device as shown in FIG.

第3図は従来の蒸気乾燥装置の一例を示し、同図におい
て、lは石英やステンレスを用い、断面形状が四角形の
処理槽であって、この処理4v!1内にフロンあるいは
IPAここではIPA2が収納されている。この処理槽
1の土壁の内周面側には冷却パイプ3が巻回されるが如
く配設されている。
FIG. 3 shows an example of a conventional steam drying apparatus, and in the same figure, l is a processing tank made of quartz or stainless steel and having a square cross-sectional shape. Freon or IPA (in this case, IPA2) is stored in 1. A cooling pipe 3 is arranged so as to be wound around the inner peripheral surface of the earthen wall of the processing tank 1.

その冷却パイプ30両端は外部で電子冷熱装置に接続さ
れ、冷却パイプ3内を冷媒ここでは冷却水が循環してい
る。そして処理槽1内の上方に昇ってきたIPA蒸気2
 を冷却パイプ3からなる冷却装置3 で冷却して液化
させ下方へ戻している。
Both ends of the cooling pipe 30 are externally connected to an electronic cooling device, and a refrigerant, here cooling water, is circulated within the cooling pipe 3. Then, IPA vapor 2 rose upward in the treatment tank 1.
A cooling device 3 consisting of a cooling pipe 3 cools the liquid, liquefies it, and returns it to the bottom.

処理槽1の底部の外側にはヒータ4が配設され、処理槽
l内のIPA2t−加熱できるように構成されている。
A heater 4 is disposed outside the bottom of the processing tank 1 and is configured to heat the IPA 2t in the processing tank 1.

このような構成のもとに、処理槽l内のIPA2をヒー
タ4によυIPA蒸気発生温度まで加熱する。そして多
数のウェハ5を搭載したカートリッジ6を図示の如く処
理槽1内に配置して蒸気乾燥を行なう。即ち、IPA蒸
気2 にょシウェハ5やウェハ治具であるカートリッジ
6に付着した純水を置換して乾燥させる。つまシウェハ
5やカートリッジ6に付着している水(水滴8)にIP
Aをとシこんで、滴7として落下させたシ、あるいは水
を蒸発させて冷却装置3 にょシ液化させる。また上方
に達したIPA蒸気2′ も冷却装置3 により冷却さ
れて液体となって落下して下方に戻る。
Based on this configuration, the IPA 2 in the processing tank 1 is heated by the heater 4 to the υIPA steam generation temperature. Then, a cartridge 6 loaded with a large number of wafers 5 is placed in the processing bath 1 as shown in the figure, and steam drying is performed. That is, the IPA vapor 2 replaces the pure water adhering to the wafer 5 and the cartridge 6, which is a wafer jig, and dries it. IP is applied to water (water droplets 8) adhering to the wafer 5 and cartridge 6.
Inject A into the cooling device 3 and evaporate the water that falls as drops 7 to liquefy it. Further, the IPA vapor 2' that has reached the upper side is also cooled by the cooling device 3, becomes a liquid, and falls back downward.

しかしながら、このようにウェハ5やウェハ治具(カー
トリッジ6)が処理槽1内に一緒に水をもちこむため、
また外部へ多量のIPAが処理槽1内の上部から排気さ
れるため、IPA溶液の濃度が低下し、″!1次液量も
低下する。一方加熱温度は元のままである。従りて気相
中に占めるIPA濃度は低下することになり蒸気乾燥効
果が減る。
However, since the wafer 5 and the wafer jig (cartridge 6) bring water into the processing tank 1,
Also, since a large amount of IPA is exhausted to the outside from the upper part of the processing tank 1, the concentration of the IPA solution decreases, and the primary liquid volume also decreases.On the other hand, the heating temperature remains the same. The IPA concentration in the gas phase decreases, reducing the steam drying effect.

そこで蒸気乾燥効果を上げるために、IPAのtV多量
に投入してやる必要があシ、安全面、経済面で問題とな
る。
Therefore, in order to increase the steam drying effect, it is necessary to input a large amount of tV of IPA, which poses safety and economic problems.

以上はIPAを用いた場合であるが、フロンを用い九場
合でも同様の問題点を生ずる。九ソし、フロンを多量に
投入する場合には特に経済面で問題となる。
The above is a case where IPA is used, but similar problems occur even when Freon is used. This poses a particular economic problem when large amounts of fluorocarbons are used.

なお、従来、乾燥処理に使われている蒸気乾燥装置につ
いては、特願昭57−89664号、特願昭57−21
6925号に記載がある。
Regarding the steam drying equipment conventionally used for drying processing, please refer to Japanese Patent Application No. 57-89664 and Japanese Patent Application No. 57-21.
It is described in No. 6925.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、蒸気乾燥に使われる、水よりも沸点の
低い液体の物質(IPAやフロンなど)が低濃度でも蒸
気乾燥に有効に利用でき、従って前記液体物質の使用量
の節減を行なうことができ、経済的であると共に安全性
の向上を図ることができるようにした蒸気乾燥装fを提
供することにある。
An object of the present invention is to effectively utilize liquid substances (such as IPA and fluorocarbons) with a lower boiling point than water, even at low concentrations, for steam drying, thereby reducing the amount of liquid substances used. It is an object of the present invention to provide a steam drying device f which is economical and can improve safety.

本発明の目的は、被処理部材に対しウォータマークの発
生を防止し、均一な乾燥を行なうことができ、歩留の向
上を図ることができるようにした蒸気乾燥装置を提供す
る。ことにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a steam drying apparatus that can prevent water marks from forming on a member to be processed, perform uniform drying, and improve yield. There is a particular thing.

本発明の前記ならびにそのほかの目的と新規な特徴は、
本明細書の記述および添付図面からあきらかくなるであ
ろう。
The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.

〔発明の概要〕[Summary of the invention]

本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、下記のとおりである。
A brief overview of typical inventions disclosed in this application is as follows.

すカわち、処理槽内の上部に冷却装&を設け、前記処理
槽内の下部側に集液部を設け、かつ水よりも沸点の低い
液体の物質たとえばIPAを収納し、更に前記処理槽の
下部側に気相中の気化した前記物質の濃度が所定値以上
となるよう前記処理槽の下部側の内部を所定温度に制御
する加熱装置を設け、前記処理槽の上部と下部側との間
に少なくとも蒸気乾燥されるべき被処理部材を配置して
、蒸気乾燥を行なうことにより、液相中の前記物質の濃
度が低濃度になっても、前記加熱装置により前記処理榴
の下部側内部が前記所定温度に制御されているので、前
記物質の気化により気相中の前記物質の濃度が所定値以
上に維持され、蒸気乾燥効果を低減させることなく有効
に蒸気乾燥を続行することができる。液相中の前記液体
物質が低濃度でも利用できることから前記液体物質の使
用量の節減を図ることができ、経済的であると共に安全
性の向上を図ることができるものである。更に前記被処
理部材に対しウォータマークの発生を防止し、均一な乾
燥を行なうことができ、歩留の向上を図ることができる
ものである。
In other words, a cooling device is provided in the upper part of the processing tank, a liquid collection part is provided in the lower part of the processing tank, and a liquid substance having a boiling point lower than water, such as IPA, is stored, and A heating device is provided at the lower part of the processing tank to control the inside of the lower part of the processing tank to a predetermined temperature so that the concentration of the vaporized substance in the gas phase is higher than a predetermined value, and the upper and lower sides of the processing tank are heated. By arranging at least the member to be treated by steam drying between them and carrying out the steam drying, even if the concentration of the substance in the liquid phase becomes low, the lower side of the treated shell is heated by the heating device. Since the inside is controlled to the predetermined temperature, the concentration of the substance in the gas phase is maintained at a predetermined value or higher by vaporization of the substance, and steam drying can be effectively continued without reducing the steam drying effect. can. Since the liquid substance in the liquid phase can be used even at a low concentration, it is possible to reduce the amount of the liquid substance used, which is economical and improves safety. Furthermore, it is possible to prevent the occurrence of water marks on the member to be processed, to perform uniform drying, and to improve the yield.

〔実施例〕〔Example〕

第1図は本発明による蒸気乾燥装置の一実施例を示す簡
略構成図でtbシ、第2図は処理槽内にIPAを収納し
た場合の、液相中のIPA濃度(wt%〕と沸点(’C
)および気相中のIPA1度(wt%〕との関係を夫々
示す特性図である。以下、本発明を第1図および第2図
を用いて説明する。なお、ここでは、LSI裂造プロセ
スでの半導体ウェハの水洗浄後の乾燥処理を、IPA蒸
気を用いて行なう場合を例にとり説明する。
Fig. 1 is a simplified configuration diagram showing an embodiment of the steam drying apparatus according to the present invention, and Fig. 2 shows the IPA concentration (wt%) in the liquid phase and the boiling point when IPA is stored in the processing tank. ('C
) and IPA 1 degree (wt%) in the gas phase.Hereinafter, the present invention will be explained using FIG. 1 and FIG. 2. An example will be explained in which the drying process after water cleaning of the semiconductor wafer is performed using IPA vapor.

M1図において、11はステンレスを用いた処理槽であ
って、この処理4%!11を水平に断面した形状は四角
形である。なお処理4!111の材料として石英を用い
てもよい。また、処理槽11内の上部には、その内周面
を巻回するが如く冷却パイプt2が配設され、その両端
は図示しない、外部に設けた電子冷熱装置に接続されて
おり、その冷却パイプ12′内を冷媒とこては冷却水が
循環するようになりている。冷却装置13は冷却パイプ
12に冷却水を循環させてなるものでるる。処理槽11
の上部へ矢印14で示すように上昇してきたIPA蒸気
は冷却装置13より冷却されて液化して落下する。
In figure M1, 11 is a treatment tank using stainless steel, and this treatment is 4%! The horizontal cross-section of 11 has a rectangular shape. Note that quartz may be used as the material for processing 4!111. In addition, a cooling pipe t2 is arranged at the upper part of the processing tank 11 so as to wrap around its inner peripheral surface, and both ends of the pipe t2 are connected to an external electronic cooling device (not shown) for cooling. A refrigerant and cooling water are circulated within the pipe 12'. The cooling device 13 is constructed by circulating cooling water through the cooling pipe 12. Processing tank 11
The IPA vapor that has risen to the top as shown by the arrow 14 is cooled by the cooling device 13, liquefied, and falls.

処理4!11の下部側には、集液部15が設けられてい
る。この集液部15は1枚の分岐板16を支持棒17に
て2枚の集液板18に接続してなるものを複数組ここで
は3組上下方向に配設してなるものである。分岐板16
は断面形状が図示の如くへ字状の部材であって、処理1
11の対向する両内壁(紙面に平行な内壁)に当接する
ように設けられている。また集液板18は図示の如く端
部が折シ曲げられて液受は部18aが形成されておシ、
処理槽11の対向する両内壁(紙面に平行な内壁)に当
接するように設けられている。そして各集液板18の一
端は処理槽11の内壁に溶着されている。分岐板16は
たとえば左右2箇所ずつ計4箇所で夫々支持棒17の一
端に取付けられ、その支持棒17の他端は集液板18に
取付けられている。
A liquid collecting section 15 is provided on the lower side of the processing 4!11. The liquid collection section 15 is formed by a plurality of sets (in this case three sets) arranged vertically in which one branch plate 16 is connected to two liquid collection plates 18 by a support rod 17. Branch plate 16
is a member whose cross-sectional shape is F-shaped as shown in the figure, and the processing 1
11 (inner walls parallel to the plane of the paper) facing each other. Further, as shown in the figure, the liquid collecting plate 18 has an end bent to form a liquid receiving portion 18a.
It is provided so as to come into contact with both opposing inner walls of the processing tank 11 (inner walls parallel to the paper surface). One end of each liquid collecting plate 18 is welded to the inner wall of the processing tank 11. The branch plates 16 are attached to one end of a support rod 17, for example, at four locations, two on the left and right, respectively, and the other end of the support rod 17 is attached to a liquid collection plate 18.

また処理槽11の底部の外側には加熱装置としてのヒー
タ19が配設され、処理槽11の下部側の集液部15全
体が83〜81℃に制御されるようになっている。
Further, a heater 19 as a heating device is disposed outside the bottom of the processing tank 11, so that the entire liquid collecting section 15 on the lower side of the processing tank 11 is controlled at 83 to 81°C.

また処理[11の下部の側壁には排液パイプ20が接続
されており、弁21を開にすることにより処理槽11の
底部に貯りた多量の水分金倉んだIPAのみを排液でき
るようになっている。
In addition, a drain pipe 20 is connected to the side wall at the bottom of the processing tank 11, and by opening the valve 21, only the IPA containing a large amount of moisture accumulated at the bottom of the processing tank 11 can be drained. It has become.

また処理槽11の上端にはN、ガス(不活性ガスでもよ
い>1一方何から他方側に向って流して処理槽11の開
口部22にN、カーテンを形成するための部材23が開
口部22t−取り巻くように取付けられている。この部
材23は一方側にN。
Further, at the upper end of the processing tank 11, N gas (an inert gas may be used) flows from one side toward the other side to the opening 22 of the processing tank 11, and a member 23 for forming a curtain is placed at the opening. 22t - mounted in a surrounding manner.This member 23 has an N on one side.

ガス供給口24を、他方側に排気口25t−有しており
、紙面に平行な両側は閉塞されている。即ち紙面に垂直
方向の両側のみ、N、ガスを供給したシ排気したシでき
るように図示の如く開口されている。この部材23の上
には蓋26が開閉自在に設けられている。この蓋26を
開いたときのみ部材23の一方側から他方側に向ってN
、ガスを流してN、カーテンを形成する。
A gas supply port 24 is provided on the other side, and an exhaust port 25t is provided on the other side, and both sides parallel to the plane of the paper are closed. That is, only both sides in the direction perpendicular to the plane of the paper are opened as shown in the figure so that N and gas can be supplied and exhausted. A lid 26 is provided on this member 23 so as to be openable and closable. Only when this lid 26 is opened, N is applied from one side of the member 23 to the other side.
, flow the gas to form a N curtain.

蒸気乾燥に供される被処理部材としてのウェハ27を搭
載したカートリッジ28は、蓋26を開いて処理槽11
の下部側と上部との間に配置される。ここで、カートリ
ッジ28を処理槽11内に入れるときは、開口部22に
N、ガスのカーテンを張ることにより外部からの空気の
巻き込みを防止でき、又蓋26を開いてカー) IJッ
ジ28會処理槽11外へ出すときは、N、ガスのカーテ
ンによりウェハ27やカートリッジ28に雰囲気上付着
しているIPATh排気口25の方へ飛ばしてやると共
に、外気の巻き込みを防止できる。
The cartridge 28 loaded with the wafer 27 as a member to be processed to be subjected to steam drying is opened in the processing tank 11 by opening the lid 26.
located between the lower side and the upper side of the Here, when putting the cartridge 28 into the processing tank 11, it is possible to prevent air from being drawn in from the outside by placing a N gas curtain over the opening 22, and also by opening the lid 26 and placing the cartridge 28 in the processing tank 11. When taking it out of the processing tank 11, a curtain of N gas is used to blow it toward the IPATh exhaust port 25 attached to the wafer 27 and cartridge 28 in the atmosphere, and it is possible to prevent outside air from being drawn in.

また処理槽11の側壁には、処理槽ll内の集液部14
にI PAt−供給するための供給パイプ29が取付け
られておシ、事前に及びその後の補給の際はこの供給パ
イプ29を介してIPA30を処理槽11内に供給して
やる。IPA30は供給パイプ29から矢印のように落
ち、3段の集液板18の液受は部18&に分かれて収納
されるようになっている。なおIPAを収納する受は皿
を別に用意してもよい。また31は落下する液、32は
蒸気である。
Also, on the side wall of the processing tank 11, a liquid collection part 14 in the processing tank 11 is provided.
A supply pipe 29 is attached to supply IPA 30 to the processing tank 11, and the IPA 30 is supplied into the processing tank 11 through this supply pipe 29 in advance and during subsequent replenishment. The IPA 30 falls from the supply pipe 29 in the direction of the arrow, and the liquid receivers of the three-stage liquid collecting plate 18 are divided into parts 18& for storage. Note that a separate tray may be prepared as a tray for storing IPA. Further, 31 is a falling liquid, and 32 is a vapor.

またヒータ19により処理槽11の下部側内部が83〜
81℃に制御されているので、第2図から判るように液
相のIPA濃度がこの温度に対応した略20〜40wt
%(83℃のとき略20wt%であシ、81℃のとき略
40wt%)以上の液が、即ち水分を略60〜80wt
%以下含むIPAが、蒸気乾燥処理中処理槽11の底部
に落ちるまでに気化させることができるよう分岐板16
、集液板18を多段に、ここでは図示の如く各3段に構
成されている。セして液相中のIPA濃度が第2図の温
度に対応した濃度以下となると液は気化せずに処理@1
1の底部に貯ることになる。たとえば83℃に制御され
ているとすれば、液相中のIPA濃度が20vt%以上
の液は集液部15から処理槽11の底部へ落ちるまでに
気化されることになるが、液相中のIPA濃度が20w
t%以下の液(多量に水分を含んだIPA液)は処理槽
11の底部に落ちるまでに気化せず、底部に貯るように
なりている。
In addition, the heater 19 causes the inside of the lower part of the processing tank 11 to
Since the temperature is controlled at 81℃, the IPA concentration in the liquid phase is approximately 20 to 40wt corresponding to this temperature, as shown in Figure 2.
% (approximately 20 wt% at 83°C, approximately 40 wt% at 81°C), that is, the liquid has a water content of approximately 60 to 80 wt%.
The branch plate 16 is installed so that the IPA containing less than
, the liquid collecting plates 18 are arranged in multiple stages, each of which has three stages as shown in the figure. When the IPA concentration in the liquid phase falls below the concentration corresponding to the temperature shown in Figure 2, the liquid does not vaporize and the process is completed.
It will be stored at the bottom of 1. For example, if the temperature is controlled at 83°C, a liquid with an IPA concentration of 20 vt% or more in the liquid phase will be vaporized before it falls from the liquid collection part 15 to the bottom of the processing tank 11, but in the liquid phase IPA concentration is 20w
The liquid below t% (IPA liquid containing a large amount of water) is not vaporized before it falls to the bottom of the processing tank 11, but is stored at the bottom.

以上のような構成のもとに、先ず、濃度100wt%の
IPA30t−供給パイプ29より処理槽11内に入れ
、集液板18に収納させる。そして上方に図示の如くカ
ートリッジ28に搭載されて配置されたウェハ2フに対
し蒸気乾!l!を行なう。
Based on the above configuration, first, 30 tons of IPA with a concentration of 100 wt % is introduced into the processing tank 11 through the supply pipe 29 and stored in the liquid collecting plate 18 . Then, the wafer 2 mounted on the cartridge 28 as shown above is steam-dried! l! Do the following.

このとき、蓋26は閉じられておシ、部材23の供給口
24よりNmガスは供給されていない。ウェハ27やカ
ートリッジ28に付着している純水がIPAtとυこん
で蒸発して上方へ行き、冷却装置13により冷却されて
液化し、又はその純水がIPA’tとシ込んで下方へ落
下する。これによりウェハ27やウェハ治具であるカー
トリッジ28は蒸気乾燥されると共に、集液板18の液
受は部18aなどに貯っているIPAの濃度は次第に薄
められて゛いく。一方IPA蒸気は次々に発生し、上方
のウェハ27やカートリッジ28に対し蒸気乾燥を行な
い、上部へ達した蒸気は冷却装置13により速やかに冷
却されて液化して落ちる。
At this time, the lid 26 is closed and Nm gas is not supplied from the supply port 24 of the member 23. The pure water adhering to the wafer 27 or cartridge 28 mixes with IPAt, evaporates and goes upward, is cooled by the cooling device 13 and becomes liquefied, or the pure water sinks in with IPAt and falls downward. do. As a result, the wafer 27 and the cartridge 28, which is a wafer jig, are steam-dried, and the concentration of IPA stored in the liquid receiver portion 18a of the liquid collecting plate 18 is gradually diluted. On the other hand, IPA vapor is generated one after another and vapor-dries the wafer 27 and cartridge 28 above, and the vapor that reaches the upper part is quickly cooled by the cooling device 13, liquefies, and falls.

このようにしてIPAは常に液体から気体、気体から液
体へと循環を繰り返しながら、ウェノ−27やカートリ
ッジ28に対して蒸気乾燥がなされる。
In this way, the IPA is constantly cycled from liquid to gas and from gas to liquid, and vapor drying is carried out on the wafer 27 and the cartridge 28.

ここで、液相中のIPA濃度と沸点および気相中のIP
A濃度との関係を示すと第2図の如くである。一般に液
相中のIPAは水分を60〜80wt%含むと沸点に変
曲点が発生し沸点が高くなる。ここでは第2図から判る
ように液相中のIPAが水分180wt%含むと約83
℃の沸点にて変曲点が発生し、気相中のIPA濃度も1
30 wt%より少し減シ略76wt%となる。しかし
、工PAFi水分を80wt%以上含むと沸点が急に高
くなりてしまうばかりか、気相中のIPA11度も急激
に薄くなる。液相中のIPAa度が40 wt%以上な
ら気相中のIPA濃度も80wt%以上の高濃度となり
蒸気乾燥に好適である。この蒸気乾燥効果は、気相中の
IPA濃度が少なくとも約76〜80wt%あれば十分
であるので、気相中のIPA濃度を約76wt%以上に
してやればよい。即ち液相中のIPA濃度20wt%で
も気化できるようにしてやればよい。つまシヒータ19
で処理槽11の下部側内部の温度を略83℃に制御して
やればよい。
Here, the IPA concentration and boiling point in the liquid phase and the IP in the gas phase
The relationship with the A concentration is shown in Figure 2. Generally, when IPA in the liquid phase contains 60 to 80 wt% of water, an inflection point occurs in the boiling point and the boiling point becomes high. As can be seen from Figure 2, if the IPA in the liquid phase contains 180 wt% water, it is approximately 83%
An inflection point occurs at the boiling point of °C, and the IPA concentration in the gas phase also decreases to 1
The amount decreased slightly from 30 wt% to approximately 76 wt%. However, when PAFi contains 80 wt% or more of water, not only does the boiling point suddenly rise, but also the IPA 11 degrees in the gas phase suddenly becomes diluted. If the IPAa degree in the liquid phase is 40 wt% or more, the IPA concentration in the gas phase is also high, 80 wt% or more, which is suitable for steam drying. This steam drying effect is sufficient if the IPA concentration in the gas phase is at least about 76 to 80 wt%, so the IPA concentration in the gas phase should be about 76 wt% or more. That is, it is sufficient to make it possible to vaporize even an IPA concentration of 20 wt% in the liquid phase. Tsumashihita 19
The temperature inside the lower part of the processing tank 11 may be controlled to approximately 83°C.

ここでは、前記温度が83〜81℃の範囲で制御される
ので、その温度に対応して、蒸気乾燥に有効に利用でき
る液相中のIPAm度の限界も第2図から判るように2
0〜40wt%の範囲で変化する。しかし、この場合気
相中のIPA鏡度が約76wt%以下となることはなく
問題は生じない。
Here, since the temperature is controlled in the range of 83 to 81°C, the limit of IPAm degrees in the liquid phase that can be effectively used for steam drying is also 2 as shown in Figure 2.
It varies in the range of 0 to 40 wt%. However, in this case, the IPA specularity in the gas phase never becomes less than about 76 wt%, and no problem occurs.

83〜81℃の温度のとき、液相中のIPA濃度が40
wt%以上の場合には第2図から判るように轟然に気化
が起シ、気相中のIPAI211度は80wt%以上と
なる。よって次々に入れ替シ、乾燥処理される別のカー
) +7ツジ28に搭載された別のウェハ27に対して
、液相中のIPA濃度が限界の20〜40wt%に至る
まで常に均一な蒸気乾燥を続行することができる。たと
えば、温度が83℃に常に制御されていれば、液相中の
IPA濃度が略20wt%になるまで、また温度が82
℃に常に制御されていれば、液相中のIPA濃度が略3
0wt%になるまで、夫々分岐板16や集液板18など
の液相より蒸発が行なわれ、分岐板16と集液板18と
の間隙を通シ抜けてウェハ27箇所へと上昇していき、
気相中のIPA濃度を蒸気乾燥効果に必要な濃度に維持
することができ、有効な蒸気乾燥が続行できる。
At a temperature of 83-81°C, the IPA concentration in the liquid phase is 40°C.
When the content is more than 80% by weight, vaporization occurs dramatically as shown in FIG. 2, and the IPAI 211 degrees in the gas phase becomes 80% by weight or more. Therefore, another wafer 27 mounted on the +7 wafer 28 is continuously replaced with another car and subjected to drying processing, and the wafer 27 is constantly and uniformly vapor dried until the IPA concentration in the liquid phase reaches the limit of 20 to 40 wt%. can continue. For example, if the temperature is constantly controlled at 83°C, until the IPA concentration in the liquid phase reaches approximately 20wt%, the temperature is kept at 82°C.
If the temperature is constantly controlled at ℃, the IPA concentration in the liquid phase will be approximately 3.
Evaporation is performed from the liquid phase of the branching plate 16 and the liquid collecting plate 18 until it becomes 0 wt%, passing through the gap between the branching plate 16 and the liquid collecting plate 18, and rising to 27 locations on the wafer. ,
The IPA concentration in the gas phase can be maintained at the concentration required for steam drying effectiveness, and effective steam drying can continue.

次にIPAの補給について述べる。たとえば83℃で常
時集液部15が制御されていたとすると、液相中のIP
A濃度が20wt%以乍となると、蒸発が起らなくなる
ので、液相中のIPA濃夏が20wt%になりたらIP
Aを供給パイプ29より補給してやれば、常に気相中の
IPA濃度は約76%以上の高濃度で蒸気乾燥を行なう
ことができる。ここで液相中のIPA11度が20wt
%になる時間は予め計算できるので、実際は所定時間経
過したら供給パイプ29より所定量のIFAを補給して
やればよい。よって83〜81’Cで制御する場合でも
、同様に液相中のIPA@度が、蒸発が行なわれない濃
度になりたら、即ち予め設定した時間になったらIPA
O補給をしてやれによい。
Next, we will discuss replenishment of IPA. For example, if the liquid collection part 15 is constantly controlled at 83°C, the IP in the liquid phase
When the A concentration becomes 20 wt% or more, evaporation will no longer occur, so when the IPA concentration in the liquid phase reaches 20 wt%, IP
By replenishing A through the supply pipe 29, steam drying can be carried out at a high IPA concentration of approximately 76% or more in the gas phase. Here, IPA 11 degrees in the liquid phase is 20wt
% can be calculated in advance, so in reality, it is sufficient to replenish a predetermined amount of IFA from the supply pipe 29 after a predetermined time has elapsed. Therefore, even when controlling at 83 to 81'C, when the IPA temperature in the liquid phase reaches a concentration at which evaporation does not occur, that is, when the preset time has elapsed, IPA
Good for replenishing O.

なお、一定時間すると、処理槽11の底部に蒸気乾燥に
利用できない、水分を十分含んだIPA液が所定量針る
(温度83℃で制御する場合には液相中のIPA濃度2
0%以下の液が貯る。)ので、弁21を開として排液パ
イプ20t−通して排液すれはよい。
In addition, after a certain period of time, a predetermined amount of IPA liquid containing sufficient moisture that cannot be used for steam drying is deposited at the bottom of the processing tank 11 (when controlling at a temperature of 83°C, the IPA concentration in the liquid phase is 2).
Less than 0% fluid accumulates. ), the valve 21 can be opened and the liquid can be drained through the drain pipe 20t.

以上から判るように、温度83〜81℃で制御される場
合には、液相中のIPA濃度が20〜40wt%以上の
液のみ蒸発させることができ、液相中のIPA龜度が2
0〜40wt%の低濃度(水分を60〜80wt%含む
IPA)になりても蒸発させることができ、従って気相
中のIPA濃度は常に約76%以上の高濃度に維持する
ことができ、蒸気乾燥効果を低減させることなく有効に
蒸気乾燥を続行できる。このように液相中のIPAa度
が低濃度になっても有効に利用できる(蒸気乾燥を実施
できる)ことから、IPAの使用量の大巾な節減を図る
ことができ、経済的であると共に安全性の向上を図るこ
とができる。
As can be seen from the above, when the temperature is controlled at 83 to 81°C, only the liquid with an IPA concentration of 20 to 40 wt% or more in the liquid phase can be evaporated, and the IPA concentration in the liquid phase is 2.
Even if the concentration is as low as 0 to 40 wt% (IPA containing 60 to 80 wt% of water), it can be evaporated, so the IPA concentration in the gas phase can always be maintained at a high concentration of about 76% or more. Steam drying can be continued effectively without reducing the steam drying effect. In this way, even if the IPAa concentration in the liquid phase becomes low, it can be used effectively (steam drying can be carried out), so it is possible to significantly reduce the amount of IPA used, which is not only economical but also Safety can be improved.

また被処理部材であるウェハ27にクォータマークが発
生するのを防止でき、均一な乾燥を行なうことができ、
歩留の向上が図られる。
In addition, it is possible to prevent quarter marks from occurring on the wafer 27, which is the member to be processed, and it is possible to perform uniform drying.
Yield is improved.

また蒸気乾燥中は処理槽11の上部は蓋26により閉じ
られているのでIPA蒸気が外部へ従来の如く放出され
るのを防止でき、IPAの損失分を大巾に減らすことが
できる。
Furthermore, since the upper part of the processing tank 11 is closed by the lid 26 during steam drying, IPA vapor can be prevented from being released to the outside as in the conventional case, and the loss of IPA can be greatly reduced.

〔効果〕〔effect〕

(1)水よりも沸点の低い液体の物質の、液相中の濃度
が低濃度になっても、加熱装置により気相中の前記物質
の温度が所定値以上となるように処理槽の下部側の内部
が所定温度に制御されているので、前記物質の気化によ
り気相中の前記物質の濃度が所定値以上に維持され、こ
のため被処理部材に対する蒸気乾燥効果を低減させるこ
となく、有効に蒸気乾燥を続行させることができる。
(1) Even if the concentration of a liquid substance with a boiling point lower than that of water in the liquid phase becomes low, a heating device is used to maintain the temperature of the substance in the gas phase at a predetermined value or higher in the lower part of the treatment tank. Since the inside of the side is controlled to a predetermined temperature, the concentration of the substance in the gas phase is maintained at a predetermined value or higher by vaporizing the substance, and therefore, the vapor drying effect on the workpiece is not reduced and is effectively dried. Steam drying can be continued.

(2)液相中の前記物質が低濃度となると、従来は前記
物質を多量に補給する必要があるが、本発明では液相中
の前記物質が低濃度でも、蒸気乾燥を有効に実施できる
ことから、前記物質の使用量の節減を図ることができ、
もって経済的であると共に安全性の向上が図れる。
(2) When the concentration of the substance in the liquid phase becomes low, conventionally it is necessary to replenish the substance in large quantities, but in the present invention, even if the concentration of the substance in the liquid phase is low, steam drying can be carried out effectively. Therefore, it is possible to reduce the amount of the substance used,
This makes it possible to improve safety while being economical.

(3)蒸気乾燥すべき被処理部材に対し、ウォータマー
クの発生を防止し、均一な乾燥を行なうことができ、歩
留の向上を図ることができる。
(3) It is possible to prevent the occurrence of water marks on the workpiece to be steam-dried, and it is possible to perform uniform drying, thereby improving the yield.

(4)水洗浄後の部材の乾燥処理を行なうことができる
ほか、部材に付着した油の洗浄(乾燥)をも行なうこと
ができる。
(4) In addition to being able to dry the member after washing with water, it is also possible to wash (dry) oil adhering to the member.

(5)  蒸気乾燥中は、処理槽に蓋をすることにより
、前記物質が蒸気として外部へ放出されるのを防ぐこと
ができ、前記物質の損失を減らすことができる。
(5) During steam drying, by covering the processing tank, it is possible to prevent the substance from being released to the outside as steam, thereby reducing the loss of the substance.

以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが、本発明は上記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることはいうまでもない。たとえば、集液部15
は集液板18に分岐板16を支持棒17を介して取付け
、集液板18を処理槽11の内壁に取付けているが、処
理〜11の底壁に一端を溶着した支持棒を底壁の左右両
側に夫々たとえば2本ずつ適宜な位置に直立させこれら
の支持棒を各集液板182分岐板16に穿設し九孔に通
してこれらの支持棒と各集液板18、分岐板16とを前
記孔部で溶着したものを用いてもよい。
Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the above Examples and can be modified in various ways without departing from the gist thereof. Nor. For example, the liquid collection part 15
The branch plate 16 is attached to the liquid collection plate 18 via the support rod 17, and the liquid collection plate 18 is attached to the inner wall of the processing tank 11. For example, two support rods are made to stand upright at appropriate positions on both the left and right sides of the liquid collection plate 182, and these support rods are bored in each liquid collection plate 182 and branch plate 16, and passed through nine holes to connect these support rods and each liquid collection plate 18 and branch plate. 16 may be welded at the hole.

また、処理槽ll内の集液部15全体が加熱装置として
のヒータ19によ#)83〜81℃にたとえばセンサ(
熱電対)を用いて制御されるようになりているが、集液
部15の温度分布を最上段の分岐板16.集液板18の
方では81℃に制御し、下段の方へ行くに従って温度が
高くなるようにして最下段の集液板18およびそれ以下
では83℃になるように制御してもよい。この場合には
、IPAfi度の高い液は上方で蒸発させることができ
る。またヒータ19t−処理槽11の底部側だけでなく
、処理槽11の下部側の側壁の外周囲に上下方向に別個
のヒータを複数個配設して、夫々センナ(熱電対)を用
いて前述した温度分布となるように制御してやるとよい
In addition, the entire liquid collection part 15 in the processing tank 11 is heated to 83 to 81°C by a heater 19 as a heating device, for example, by a sensor (
The temperature distribution in the liquid collecting section 15 is controlled using a branch plate 16. The liquid collecting plate 18 may be controlled at 81° C., and the temperature may be increased as it goes toward the lower stage, so that the temperature at the lowermost liquid collecting plate 18 and below is 83° C. In this case, the liquid with a high IPAfi degree can be evaporated above. Heater 19t - A plurality of separate heaters are disposed not only on the bottom side of the processing tank 11 but also around the outer circumference of the side wall on the lower side of the processing tank 11 in the vertical direction, and each heater is provided with a senna (thermocouple). It is best to control the temperature so that it has a certain temperature distribution.

またウェハの水洗浄後の乾燥処理の場合について説明し
たが、種々の部材に付着した油の洗浄(乾燥)も行なう
ことができる。この場合には、IPAの他、フロンやI
PAとフロンの混合液を用いることができる。
Furthermore, although the case of drying treatment after washing the wafer with water has been described, it is also possible to perform cleaning (drying) of oil adhering to various members. In this case, in addition to IPA, fluorocarbons and I
A mixed solution of PA and Freon can be used.

〔利用分野〕[Application field]

以上の説明では王として本発明者によってなされた発明
をその背景となり7ヒ利用分野でるるLSI製造プロセ
スでの半導体クエハの水洗浄後の転傾処理に適用した場
合について説明したが、それに限定されるものではなく
、たとえは、微細パターン製品やその他の部材の水洗浄
後の乾燥処理などに適用できる。この場合における水の
蒸気乾燥には水よりも沸点が低い液体物質であるIPA
e用いると効果的である。更に本発明をたとえば、半導
体装置に使うパルプやコネクタなどに機械加工上ついた
油をとるための洗浄、即ち乾燥にも適用できる。この場
合には、IPAやフロンやIPAとフロンの混合液など
を用いると効果的である。
In the above explanation, the invention made by the present inventor is mainly applied to the tilting treatment after water washing of semiconductor wafers in the LSI manufacturing process in the field of application, but the invention is not limited to this. For example, it can be applied to the drying process of fine patterned products and other parts after washing with water. In this case, IPA, a liquid substance with a lower boiling point than water, is used for steam drying of water.
It is effective to use e. Furthermore, the present invention can also be applied to, for example, cleaning or drying of pulp used in semiconductor devices, connectors, etc. to remove oil from machining. In this case, it is effective to use IPA, fluorocarbons, or a mixture of IPA and fluorocarbons.

要するに本発明は水洗浄後の乾燥の他、油をとるための
洗浄(即ち乾燥)にも適用できる。
In short, the present invention can be applied not only to drying after washing with water but also to washing (that is, drying) to remove oil.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による蒸気乾燥装置の一実施例を示す簡
略構成図、 第2図は液相中のIPA濃度と沸点および気相中のIP
A濃度との関係を示す特性図、第3図は従来の蒸気乾燥
装置の一例を示す簡略構成図である。 11・・・処理槽、12・・・冷却パイプ、13・・・
冷却装置、15・・・集液部、16・・・分岐板、18
・・・集液板、19・・・ヒータ、20・・・排液パイ
プ、21・・・弁、22・・・開口部、26・・・蓋、
27・・・ウェハ、28・・・カートリッジ、29・・
・供給パイプ、30・・・IPA。 31・・・液。 代理人 弁理士  小 川 勝 男11.。
Fig. 1 is a simplified configuration diagram showing an embodiment of the steam drying apparatus according to the present invention, and Fig. 2 shows the IPA concentration and boiling point in the liquid phase and the IP in the gas phase.
A characteristic diagram showing the relationship with the A concentration, and FIG. 3 is a simplified configuration diagram showing an example of a conventional steam drying apparatus. 11... Processing tank, 12... Cooling pipe, 13...
Cooling device, 15... Liquid collecting section, 16... Branch plate, 18
... Liquid collection plate, 19 ... Heater, 20 ... Drain pipe, 21 ... Valve, 22 ... Opening, 26 ... Lid,
27...Wafer, 28...Cartridge, 29...
- Supply pipe, 30...IPA. 31...liquid. Agent: Patent Attorney Katsuo Ogawa 11. .

Claims (1)

【特許請求の範囲】 1、処理槽内の上部に冷却装置を設け、前記処理槽内の
下部側に集液部を設け、かつ水よりも沸点の低い液体の
物質を収納し、更に前記処理槽の下部側に気相中の気化
した前記物質の濃度が所定値以上となるよう前記処理槽
の下部側の内部を所定温度に制御する加熱装置を設ける
ようにしたことを特徴とする蒸気乾燥装置。 2、前記集液部は、分岐板と集液板とを上下方向に交互
に配置して多段構成してなり、上の段から下の段へと流
れ落ちるようにし、かつ蒸発した前記物質が上昇しうる
通路が設けられるようにした特許請求の範囲第1項記載
の蒸気乾燥装置。 3、前記液体の物質として、イソプロピルアルコールや
フロンなどを用いてなる特許請求の範囲第1項又は第2
項記載の蒸気乾燥装置。 4、処理槽の下部より排液しうるように構成してなる特
許請求の範囲第1項ないし第3項のいずれかに記載の蒸
気乾燥装置。 5、処理槽の上端部に不活性ガスやN_2ガスによるカ
ーテンを形成しうるようにした特許請求の範囲第1項な
いし第4項のいずれかに記載の蒸気乾燥装置。 6、処理槽に開閉自在の蓋を設けてなる特許請求の範囲
第1項ないし第5項のいずれかに記載の蒸気乾燥装置。
[Claims] 1. A cooling device is provided in the upper part of the processing tank, a liquid collection part is provided in the lower part of the processing tank, and a liquid substance having a boiling point lower than water is stored, and Steam drying, characterized in that a heating device is installed at the lower part of the tank to control the inside of the lower part of the processing tank to a predetermined temperature so that the concentration of the vaporized substance in the gas phase is equal to or higher than a predetermined value. Device. 2. The liquid collection section has a multi-stage configuration in which branch plates and liquid collection plates are arranged alternately in the vertical direction, so that the liquid flows down from the upper stage to the lower stage, and the evaporated substance rises. 2. A steam drying apparatus according to claim 1, wherein said steam drying apparatus is provided with a passageway that allows said steam to dry. 3. Claims 1 or 2 in which isopropyl alcohol, chlorofluorocarbon, or the like is used as the liquid substance.
Steam drying equipment as described in Section 1. 4. The steam drying apparatus according to any one of claims 1 to 3, which is configured so that liquid can be drained from the lower part of the processing tank. 5. The steam drying apparatus according to any one of claims 1 to 4, which is capable of forming a curtain of inert gas or N_2 gas at the upper end of the processing tank. 6. The steam drying apparatus according to any one of claims 1 to 5, wherein the processing tank is provided with a lid that can be opened and closed.
JP8249385A 1985-04-19 1985-04-19 Steam drying device Pending JPS61241927A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8249385A JPS61241927A (en) 1985-04-19 1985-04-19 Steam drying device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8249385A JPS61241927A (en) 1985-04-19 1985-04-19 Steam drying device

Publications (1)

Publication Number Publication Date
JPS61241927A true JPS61241927A (en) 1986-10-28

Family

ID=13776016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8249385A Pending JPS61241927A (en) 1985-04-19 1985-04-19 Steam drying device

Country Status (1)

Country Link
JP (1) JPS61241927A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01287928A (en) * 1987-12-29 1989-11-20 Mitsubishi Electric Corp Vapor drying method and device thereof
US5956859A (en) * 1997-05-22 1999-09-28 Ryoden Semiconductor System Emgineering Corporation Drying apparatus for processing surface of substrate
US5996242A (en) * 1997-04-04 1999-12-07 Ryoden Semiconductor System Engineering Corporation Drying apparatus and method
US6032382A (en) * 1997-05-22 2000-03-07 Mitsubishi Denki Kabushiki Kaisha Drying apparatus and method using IPA of a semiconductor wafer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01287928A (en) * 1987-12-29 1989-11-20 Mitsubishi Electric Corp Vapor drying method and device thereof
US5996242A (en) * 1997-04-04 1999-12-07 Ryoden Semiconductor System Engineering Corporation Drying apparatus and method
US5956859A (en) * 1997-05-22 1999-09-28 Ryoden Semiconductor System Emgineering Corporation Drying apparatus for processing surface of substrate
US6032382A (en) * 1997-05-22 2000-03-07 Mitsubishi Denki Kabushiki Kaisha Drying apparatus and method using IPA of a semiconductor wafer

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