JPS61240220A - Optical beam shaping method for semiconductor laser - Google Patents

Optical beam shaping method for semiconductor laser

Info

Publication number
JPS61240220A
JPS61240220A JP8127285A JP8127285A JPS61240220A JP S61240220 A JPS61240220 A JP S61240220A JP 8127285 A JP8127285 A JP 8127285A JP 8127285 A JP8127285 A JP 8127285A JP S61240220 A JPS61240220 A JP S61240220A
Authority
JP
Japan
Prior art keywords
semiconductor laser
optical beam
light beam
emitted
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8127285A
Other languages
Japanese (ja)
Inventor
Masahide Tsujii
辻井 正秀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP8127285A priority Critical patent/JPS61240220A/en
Publication of JPS61240220A publication Critical patent/JPS61240220A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To simplify an axial alignment of an optical beam and a photodetector, and its fine adjustment by making an elliptical optical beam incident and transmit on and through two pieces of triangular pyramid-shaped prisms which is placed so that the position can be adjusted freely and have specified the vertical angle, shaping it to a true circular optical beam, and emitting it in parallel to the axial direction of an emitted optical beam from a semiconductor laser. CONSTITUTION:An elliptical optical beam collimated an emitted beam from a semiconductor laser 1 is made incident and transmit on and through two pieces of triangular pyramid-shaped prisms 3, 4 of a vertical angle alpha, which is placed so that the position can be adjusted freely. By adjusting the placed position of two pieces of prisms 3, 4, a transmitting optical beam is shaped to a true circle, and also emitted in parallel to the axial direction of the emitted optical beam from the semiconductor laser 1. In this way, an axial alignment of the optical beam which is shaped to a true circle and the photodetector, and its fine adjustment are executed very easily, also no making loss is generated, and also this method can be applied to the semiconductor laser having various broadening angles.

Description

【発明の詳細な説明】 (技術分野) 本発明はプリズムを用いた半導体レーザの光ビーム整形
方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a method of shaping a light beam of a semiconductor laser using a prism.

(従来技術) 従来、半導体レーザから受光素子に光ビームを投入する
場合、半導体レーザの直前に球レンズ、円柱状レンズ等
のコリメーターレンズを配設し半導体レーザからの出射
光ビームをフリメートして受光素子に投入していたが、
コリメートされた光ビームは惰円形を有しているために
受光素子への投入損が生じる。この投入損を無くするた
めにコリメートされた惰円形の光ビームを一個のプリズ
ムに透過させて円形に整形する方法が提案されているが
、半導体レーザから出射される光ビームは個々の半導体
レーザによってその広がり角度が異なるために、広がり
角度に合わせた多種多様のプリズムを設計用意しなけれ
ばならず、また、−個のプリズムを用いて光ビームを円
形に整形すると、第2図に示すように半導体レーザ10
からの出射光ビームの軸方向とプリズム11に透過し円
形に整形した後の光ビームの軸方向との間に図示するよ
うに傾きが生じるため、整形光ビームと受光素子との軸
合せ及び微調整が極めて困itであるなどの問題点があ
った。
(Prior art) Conventionally, when a light beam is input from a semiconductor laser to a light receiving element, a collimator lens such as a ball lens or a cylindrical lens is placed just before the semiconductor laser to filimate the light beam emitted from the semiconductor laser. I was putting it into the photodetector, but
Since the collimated light beam has an inertial circular shape, a loss occurs in inputting the light beam to the light receiving element. In order to eliminate this input loss, a method has been proposed in which a collimated circular light beam is transmitted through a single prism and shaped into a circular shape, but the light beam emitted from the semiconductor laser is Since the spread angles are different, it is necessary to design and prepare a wide variety of prisms according to the spread angles. Also, when the light beam is shaped into a circle using - prisms, as shown in Figure 2, Semiconductor laser 10
As shown in the figure, there is an inclination between the axial direction of the emitted light beam and the axial direction of the light beam after passing through the prism 11 and shaping it into a circular shape. There were problems such as extremely difficult adjustment.

(本発明の構成) 本発明方法は上記点に鑑みなされたもので、半導体レー
ザからの出射光ビームをコリメートした後の惰円形の光
ビームを、位置調整自在に配置した頂角αの二個の三角
錐状プリズムに入射透過させて真円形光ビームに整形し
半導体レーザからの出射光ビームの軸方向と平行に出射
させることを特徴とするものである。
(Structure of the present invention) The method of the present invention has been made in view of the above points, and the method is to collimate the light beam emitted from the semiconductor laser, and then collimate the light beam into two circular light beams with an apex angle α arranged so that the position can be freely adjusted. It is characterized in that the light beam enters and passes through a triangular pyramidal prism, is shaped into a perfectly circular light beam, and is emitted in parallel to the axial direction of the light beam emitted from the semiconductor laser.

(本発明の実施例) 以下、本発明方法の一実施例を図面により説明するに、
第1図において1は半導体レーザ、2は半導体レーザー
の直前にセットされた球レンズ、円柱状レンズ等からな
るコリメーターレンズ、3は頂角αの三角錐状プリズム
、番は上記三角錐状プリズム3と対称的に配置された頂
角αの三角錐状プリズムで、両プリズムを、 屈折率n = sinα= aidβ、 、 、 、 
(1)プリズムの傾は角r=β−α、  、  、  
、 (2)楕円形ビームの短軸径d′&長軸径dとの関
係かになるように上記玉代を満足させるように位置調整
し、各種広がり角を有する半導体レーザーからづ の出射光ビームをコリメーターレンズ2でコリメーター
た後の惰円形光ビームを真円形d°°に整形し、半導体
レーザーからの出射光ビームの軸方向と平行に出射させ
る。
(Example of the present invention) Hereinafter, an example of the method of the present invention will be explained with reference to the drawings.
In Fig. 1, 1 is a semiconductor laser, 2 is a collimator lens consisting of a spherical lens, a cylindrical lens, etc. set immediately in front of the semiconductor laser, 3 is a triangular pyramidal prism with an apex angle α, and the number is the triangular pyramidal prism mentioned above. 3 and a triangular pyramidal prism with an apex angle α arranged symmetrically, both prisms have refractive index n = sin α = aid β, , , ,
(1) The inclination of the prism is the angle r=β−α, , ,
, (2) Adjust the position so as to satisfy the above beam width so as to satisfy the relationship between the minor axis diameter d' and the major axis diameter d of the elliptical beam, and emit light from a semiconductor laser with various spread angles. After collimating the beam with the collimator lens 2, the circular light beam is shaped into a perfect circle d° and is emitted in parallel to the axial direction of the light beam emitted from the semiconductor laser.

(本発明の効果) 本発明方法は上述のようになり、半導体レーザ1からの
出射光ビームをコリメートした後の惰円形光ビームを、
位置調整自在に配置した頂角αの二個の三角錐状プリズ
ム3、番に入射透過させ、上記二個のプリズム3、番の
配置位置を調整することによって透過光ビームを真円形
に整形すると共に半導体レーザ1からの出射光ビームの
軸方向と平行に出射させるので、真円形に整形された光
ビームと受光素子との軸合せ及び微調整が極めて簡単に
行え、しかも、投入損が生じることもなく、さらに、各
種広がり角を有する半導体レーザに適泪しうるという優
れた利点がある。
(Effects of the present invention) The method of the present invention is as described above, and after collimating the light beam emitted from the semiconductor laser 1, the inertial circular light beam is
The light beam enters and passes through two triangular pyramid-shaped prisms 3 and 3 whose apex angles are arranged so that their positions can be adjusted freely, and the transmitted light beam is shaped into a perfect circle by adjusting the arrangement positions of the two prisms 3 and 3. At the same time, since the light beam is emitted parallel to the axial direction of the light beam emitted from the semiconductor laser 1, alignment and fine adjustment between the perfectly circularly shaped light beam and the light receiving element can be carried out extremely easily, and moreover, no input loss occurs. Moreover, it has the excellent advantage of being suitable for semiconductor lasers having various divergence angles.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す説明図、第2図は従来
の光ビーム整形方法を示す説明図である。
FIG. 1 is an explanatory diagram showing an embodiment of the present invention, and FIG. 2 is an explanatory diagram showing a conventional light beam shaping method.

Claims (1)

【特許請求の範囲】[Claims] 半導体レーザからの出射光ビームをコリメートした後の
惰円形の光ビームを、位置調整自在に配置した頂角αの
二個の三角錐状プリズムに入射透過させて真円形光ビー
ムに整形し半導体レーザからの出射光ビームの軸方向と
平行に出射させることを特徴とする半導体レーザの光ビ
ーム整形方法。
After collimating the emitted light beam from the semiconductor laser, the circular light beam enters and passes through two triangular pyramidal prisms with an apex angle of α arranged so that the position can be adjusted freely, and is shaped into a perfect circular light beam. A method for shaping a light beam of a semiconductor laser, the method comprising emitting a light beam parallel to the axial direction of the light beam emitted from the semiconductor laser.
JP8127285A 1985-04-18 1985-04-18 Optical beam shaping method for semiconductor laser Pending JPS61240220A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8127285A JPS61240220A (en) 1985-04-18 1985-04-18 Optical beam shaping method for semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8127285A JPS61240220A (en) 1985-04-18 1985-04-18 Optical beam shaping method for semiconductor laser

Publications (1)

Publication Number Publication Date
JPS61240220A true JPS61240220A (en) 1986-10-25

Family

ID=13741729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8127285A Pending JPS61240220A (en) 1985-04-18 1985-04-18 Optical beam shaping method for semiconductor laser

Country Status (1)

Country Link
JP (1) JPS61240220A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01257387A (en) * 1988-04-07 1989-10-13 Toshiba Corp Dye laser apparatus
US5596456A (en) * 1994-02-25 1997-01-21 New Focus, Inc. Achromatic anamorphic prism pair
CN105328330A (en) * 2015-10-29 2016-02-17 广东正业科技股份有限公司 CO2 laser and outer optical path transmission method and system of CO2 laser
CN105562925A (en) * 2016-01-28 2016-05-11 广东正业科技股份有限公司 CO2 laser cutting device and optical path transmission method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01257387A (en) * 1988-04-07 1989-10-13 Toshiba Corp Dye laser apparatus
US5596456A (en) * 1994-02-25 1997-01-21 New Focus, Inc. Achromatic anamorphic prism pair
CN105328330A (en) * 2015-10-29 2016-02-17 广东正业科技股份有限公司 CO2 laser and outer optical path transmission method and system of CO2 laser
CN105328330B (en) * 2015-10-29 2017-05-10 广东正业科技股份有限公司 CO2 laser and outer optical path transmission method and system of CO2 laser
CN105562925A (en) * 2016-01-28 2016-05-11 广东正业科技股份有限公司 CO2 laser cutting device and optical path transmission method thereof

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