CN216901167U - Semiconductor laser collimation light path - Google Patents
Semiconductor laser collimation light path Download PDFInfo
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- CN216901167U CN216901167U CN202220142141.7U CN202220142141U CN216901167U CN 216901167 U CN216901167 U CN 216901167U CN 202220142141 U CN202220142141 U CN 202220142141U CN 216901167 U CN216901167 U CN 216901167U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 230000006835 compression Effects 0.000 claims abstract description 26
- 238000007906 compression Methods 0.000 claims abstract description 26
- 230000003287 optical effect Effects 0.000 claims abstract description 19
- 230000008859 change Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
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Abstract
The utility model provides a semiconductor laser collimation light path. The collimating optical path comprises a semiconductor laser, a fast axis compression lens, a first lens and a second lens, wherein the semiconductor laser, the fast axis compression lens, the first lens and the second lens are sequentially arranged along an optical axis; the fast axis compression mirror is used for pre-compressing the fast axis direction of the output light of the semiconductor laser to reduce a divergence angle; the effective clear aperture of the first lens is matched with the size of the laser beam output by the fast axis compression mirror, and the effective clear aperture of the second lens is matched with the size of the laser beam output by the first lens; the first lens and the second lens are a concave-convex lens combination. The semiconductor laser collimation light path provided by the utility model can realize higher collimation degree of the output light beam of the semiconductor laser under the condition of smaller overall dimension of a light path system, and can also give consideration to the light-emitting efficiency of the laser to achieve the matching of the light-emitting efficiency and the size of a collimation system; on the other hand, the light path debugging process of the collimation scheme is relatively simple, the consistency of the light path is easy to realize, and the light emitting effect is good.
Description
Technical Field
The utility model belongs to the field of semiconductor lasers, and relates to a semiconductor laser collimation light path.
Background
The semiconductor laser has the characteristics of light weight, high modulation efficiency, small volume and the like, and is widely applied in the fields of civilian use, military use, medical treatment and the like. The special structure of the semiconductor laser determines that the divergence angle of the semiconductor laser is asymmetric in two directions which are parallel to and vertical to a junction plane, as shown in the attached drawings 1 and 2 in the specification, wherein fig. 1 is a schematic diagram of the divergence angle of laser in a fast axis direction of the semiconductor laser, and fig. 2 is a schematic diagram of the divergence angle of laser in a slow axis direction of the semiconductor laser. As shown in fig. 1 and 2, since the laser beam output by the semiconductor laser 101 has different divergence angles in the fast axis direction and the slow axis direction, resulting in uneven light intensity distribution, a long and narrow elliptical spot in the far field, and poor beam quality, the laser beam emitted by the semiconductor laser must be shaped and then used.
The existing methods for collimating the light beam of the semiconductor laser include the following two methods:
(1) single lens collimation
Because the divergence angle of the semiconductor laser in the fast axis direction is large, if a high light-emitting efficiency is to be obtained, a large-caliber single lens is required to collimate an emitted light beam, and the use of the large-caliber single lens often causes the overall dimension of the whole device to be overlarge.
(2) Double cylindrical mirror collimation
Two mutually perpendicular cylindrical mirrors are used for respectively collimating the fast axis and the slow axis of the laser beam. Although the dual cylindrical mirror can obtain better light-emitting efficiency and collimation degree, the collimating light path needs to be debugged by a special tool due to the non-rotational symmetry of the lens of the used cylindrical mirror, so that the mass production is not facilitated.
Therefore, the two kinds of semiconductor laser collimation devices commonly used at present, the single lens collimation device cannot give consideration to the overall dimension of the device and the light-emitting efficiency of the semiconductor laser, and the collimation scheme of the double-cylindrical lens leads to a complicated debugging process and is not beneficial to controlling the consistency of the light path, thereby influencing the light-emitting effect.
SUMMERY OF THE UTILITY MODEL
In view of various inconveniences of the prior semiconductor laser collimation device, the utility model provides a novel semiconductor laser collimation light path, and the specific technical scheme is as follows.
A semiconductor laser collimation optical path comprises a semiconductor laser, a fast axis compression mirror, a first lens and a second lens, wherein the semiconductor laser, the fast axis compression mirror, the first lens and the second lens are sequentially arranged along an optical axis;
the fast axis compression mirror is used for pre-compressing the fast axis direction of the output light of the semiconductor laser and reducing the divergence angle;
the effective clear aperture of the first lens is matched with the size of the laser beam output by the fast axis compression mirror, and the effective clear aperture of the second lens is matched with the size of the laser beam output by the first lens;
the first lens and the second lens are a concave-convex lens combination.
Preferably, the output light of the semiconductor laser is single-mode laser or multi-mode laser.
Preferably, the fast axis compression mirror is packaged inside the semiconductor laser.
Preferably, the first lens is an arbitrary rotationally symmetric surface type concave lens.
Preferably, the second lens is a convex lens with any rotational symmetry plane.
Preferably, the distance between the first lens and the fast axis compression mirror is adjustable, and the position of the second lens is adjusted according to the change of the distance from the first lens to the fast axis compression mirror.
According to the scheme, the semiconductor laser collimation light path provided by the utility model has the advantages that the divergence angle of the semiconductor laser beam in the fast axis direction is compressed by the fast axis compression mirror, so that the light spot output effect basically consistent with the slow axis divergence angle is realized; the effective clear aperture of the concave lens is matched with the size of the compressed laser beam, so that the laser divergence effect is realized; the effective clear aperture of the convex lens is matched with the size of the laser beam after divergence, so that the collimation effect on the laser is realized; the concave-convex lens is a group of lens combination, and the combination can realize longer equivalent focal length and shorter collimation system length. Therefore, the collimating light path provided by the utility model can realize high laser collimation degree and high light-emitting efficiency, and simultaneously reduces the overall dimension. In addition, concave lens and convex lens among this novel use are arbitrary rotational symmetry face type, have reduced the installation and have transferred the degree of difficulty, have promoted assembly efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic diagram illustrating the principle of the divergence angle of the disclosed fast axis laser;
FIG. 2 is a schematic illustration of the principle of slow axis laser divergence disclosed in the present invention;
FIG. 3 is a schematic diagram of the optical effect of the disclosed fast axis compression mirror;
fig. 4 is a schematic diagram of the collimated light path of the fast axis compressed laser through the meniscus combination.
In the figure, 100, packaged semiconductor laser 101, semiconductor laser 102, fast axis compression mirror 200, concave lens 300, convex lens 400, optical axis.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment provides a semiconductor laser collimation optical path.
As shown in fig. 3 in the specification, in order to correct the situation that the divergence angles of the semiconductor laser 101 in the fast axis and the slow axis are not consistent, a fast axis compression mirror 102 is used to compress the originally larger divergence angle of the laser in the fast axis direction, and the fast axis compression mirror 102 can be integrated in the package structure 100 of the semiconductor laser; the laser light having passed through the fast axis compression mirror 102 has a divergence angle in the fast axis direction that is the same as that in the slow axis direction.
As shown in fig. 4, the packaged semiconductor laser 100, the concave lens 200, and the convex lens 300 are sequentially arranged along the optical axis 400, and the centers thereof are located on the optical axis. The size of the semiconductor laser beam compressed by the fast axis is matched with the effective light-passing aperture of the concave lens 200, and after passing through the concave lens 200, the laser beam is dispersed and continuously transmitted along the direction of the optical axis; the aperture of the laser beam subjected to the divergence effect is matched with the effective light-passing aperture of the convex lens 300, and the laser beam is collimated and emitted after passing through the convex lens 300.
In this embodiment, the concave lens 200 and the convex lens 300 are both arbitrary rotationally symmetrical surface type lenses.
In this embodiment, the semiconductor laser 101 may be a single mode or multimode laser output.
In addition, in the collimation light path in this embodiment, the distance between the concave lens 200 and the fast axis compression mirror 102 is adjustable, and the position of the convex lens 300 is adjusted according to the change of the distance between the concave lens 200 and the fast axis compression mirror 102.
Due to the fact that the light-passing apertures in the collimation light path are matched, the collimation light path can achieve high light-emitting efficiency; and the concave-convex lens in the optical path is a group of lens combination, and the longer equivalent focal length of the optical path and the shorter length of the collimation optical path system can be realized through the combination. Therefore, the semiconductor laser collimation light path provided by the embodiment can realize higher laser collimation degree on one hand, and simultaneously reduces the overall dimension of the collimation system; on the other hand, the concave-convex lens in the light path is in a rotational symmetry plane type, so that the relative direction of the concave-convex lens and the fast and slow axes does not need to be considered, the assembling and adjusting difficulty of the collimation system is reduced, and the assembly efficiency of the system is improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the utility model, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (6)
1. A semiconductor laser collimation light path is characterized in that the light path comprises a semiconductor laser, a fast axis compression lens, a first lens and a second lens, wherein the semiconductor laser, the fast axis compression lens, the first lens and the second lens are sequentially arranged along an optical axis;
the fast axis compression mirror is used for pre-compressing the fast axis direction of the output light of the semiconductor laser and reducing the fast axis divergence angle;
the effective clear aperture of the first lens is matched with the size of the laser beam output by the fast axis compression mirror, and the effective clear aperture of the second lens is matched with the size of the laser beam output by the first lens;
the first lens and the second lens are a concave-convex lens combination.
2. The collimated optical path of a semiconductor laser as claimed in claim 1, wherein the semiconductor laser outputs either single mode laser light or multimode laser light.
3. The collimated optical path for a semiconductor laser as claimed in claim 1, wherein the fast axis compression mirror is integrated within the package structure of the semiconductor laser.
4. The collimated optical path of a semiconductor laser as claimed in claim 1, wherein the first lens is a concave lens with any rotational symmetry.
5. The collimated optical path of a semiconductor laser as claimed in claim 4, wherein the second lens is a convex lens with any rotational symmetry plane.
6. The collimating optical path of a semiconductor laser as claimed in claim 1, wherein: the distance between the first lens and the fast axis compression mirror is adjustable, and the position of the second lens is adjusted according to the change of the distance from the first lens to the fast axis compression mirror.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220142141.7U CN216901167U (en) | 2022-01-19 | 2022-01-19 | Semiconductor laser collimation light path |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220142141.7U CN216901167U (en) | 2022-01-19 | 2022-01-19 | Semiconductor laser collimation light path |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216901167U true CN216901167U (en) | 2022-07-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202220142141.7U Active CN216901167U (en) | 2022-01-19 | 2022-01-19 | Semiconductor laser collimation light path |
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| Country | Link |
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| CN (1) | CN216901167U (en) |
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2022
- 2022-01-19 CN CN202220142141.7U patent/CN216901167U/en active Active
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Effective date of registration: 20240513 Address after: 511517 area B, no.27-9 Baijia Industrial Park, Qingyuan high tech Zone, Guangdong Province Patentee after: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. Country or region after: China Address before: 239064 No.100 Nanjing Road, Langya Economic Development Zone, Chuzhou City, Anhui Province Patentee before: Anhui Guangzhi Technology Co.,Ltd. Country or region before: China |
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