JPS61239245A - Photoresist material - Google Patents

Photoresist material

Info

Publication number
JPS61239245A
JPS61239245A JP8009085A JP8009085A JPS61239245A JP S61239245 A JPS61239245 A JP S61239245A JP 8009085 A JP8009085 A JP 8009085A JP 8009085 A JP8009085 A JP 8009085A JP S61239245 A JPS61239245 A JP S61239245A
Authority
JP
Japan
Prior art keywords
polymer
parts
molecular weight
photoresist material
photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8009085A
Other languages
Japanese (ja)
Inventor
Yoshitaka Goto
後藤 義隆
Toshiya Yazawa
矢澤 俊也
Kenichi Fujii
健一 藤井
Eiichi Yamada
栄一 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NOF Corp
Original Assignee
Nippon Oil and Fats Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Oil and Fats Co Ltd filed Critical Nippon Oil and Fats Co Ltd
Priority to JP8009085A priority Critical patent/JPS61239245A/en
Publication of JPS61239245A publication Critical patent/JPS61239245A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/008Azides
    • G03F7/012Macromolecular azides; Macromolecular additives, e.g. binders

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)

Abstract

PURPOSE:To improve adhesion between a photoresist material and a substrate and to enhance corrosion resistance of the hardened film by using a polymer having a mol.wt. of >=5,000 as a photosensitive component having partial structural units represented by specified general formula I. CONSTITUTION:The photoresist material is formed by polymerizing or co polymerizing a compd. having both of hydroxyl and azidobenzoyl groups represented by formula I where R1 being H, methyl, or ethyl and R2 being 1-3C alkyl or such alkoxy, to form a polymer having a mol.wt. of >=5,000 and partial structural units represented by formula II as a photosensitive compo nent. It is preferred to use these partial structure in an amt. of >=10wt% of the polymer.

Description

【発明の詳細な説明】 (産業上の利用分野〕 本発明はフォトレジスト材料に関するものでらり、さら
に詳しくは側鎖にアジドベンゾイルオキシ基を有する高
分子重合体を主体として成るフォトレジスト材料に関す
るものである。
Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a photoresist material, and more particularly to a photoresist material mainly composed of a high molecular weight polymer having an azidobenzoyloxy group in its side chain. It is something.

〔従来の技術〕[Conventional technology]

フォトレジストは当該業界では周知のように集積回路、
プリント配線板、金属凸版、網点グラビア、等の作製を
始め、各種金属精密加工を行なう上で必要不可欠な材料
である。このような多様な用途に応じて1種々の7オト
レジストが用いられるが、一般的に要求される性能とし
ては、使用する光源に対して感度が高いこと、解像性の
良好なこと、基板との接着性が強いこと、硬化膜の耐工
、2チング性が高いこと、保存性が良好で感光膜の熱安
定性が高いこと等である。
As is well known in the industry, photoresists are used for integrated circuits,
It is an indispensable material for various types of metal precision processing, including the production of printed wiring boards, metal letterpress printing, halftone dot gravure, etc. Various types of 7-photoresist are used depending on these various uses, but the generally required performance is high sensitivity to the light source used, good resolution, and good connection with the substrate. The adhesive properties of the cured film are strong, the cured film has high mechanical resistance and 2 ting resistance, the storage stability is good, and the photosensitive film has high thermal stability.

従来使用されているネガ型の7オトレジストは以下のよ
うに4つに大別することができる。
Conventionally used negative type 7-otoresists can be roughly divided into four types as follows.

(I)  グルー、カゼイン、セラック等の天然高分子
や、ポリビニルアルコール等の合成高分子に光架橋剤と
して重クロム酸塩類を添加したもの。
(I) Dichromates added as a photocrosslinking agent to natural polymers such as glue, casein, and shellac, or synthetic polymers such as polyvinyl alcohol.

(2)光二量化するケイ皮酸をポリとニルアルコールに
エステル化して側鎖に付与したもの(米国特許第261
0120号)。
(2) Photodimerizable cinnamic acid is esterified into poly and nyl alcohol and attached to the side chain (US Patent No. 261
No. 0120).

(3)天然や合成のゴムを環化し、これに芳香族ビスア
ジド化合物を光架橋剤として添加したもの(米国特許第
2852379号)。
(3) Natural or synthetic rubber is cyclized and an aromatic bisazide compound is added thereto as a photocrosslinking agent (US Pat. No. 2,852,379).

(4)  重合性不飽和基を有するプレポリマーに光重
合開始剤を添加したもの(特公昭45−25231号)
(4) A photopolymerization initiator added to a prepolymer having a polymerizable unsaturated group (Japanese Patent Publication No. 45-25231)
.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

ゴム自身に感光性が無いため、低分子量のビスアジド化
合物を光架橋剤として用いるため現儂時に気中の酸素に
よる感度低下が大きく、酸素をし茅へいする必要があっ
た。
Since rubber itself has no photosensitivity, a low-molecular-weight bisazide compound is used as a photocrosslinking agent, so at present there was a large drop in sensitivity due to atmospheric oxygen, and it was necessary to remove oxygen.

〔問題を解決するための手段〕[Means to solve the problem]

本発明者らは鋭意検討の結果高感度で、各種金属、ガラ
ス、シリコン等の基板と付着性が良く、先鋭な画像を与
え、硬化膜の耐蝕性が良好で、かつ熱的な安定性の高い
フォトレジスト材料を得るに到りた。
As a result of intensive studies, the present inventors found that it has high sensitivity, good adhesion to various metal, glass, silicone, etc. substrates, provides sharp images, has good corrosion resistance of the cured film, and has excellent thermal stability. A high quality photoresist material has been obtained.

すなわち1本発明は一般式(I)で示す一+CU、−C
+− 部分構造を構造単位に含む分子量5000以上の高分子
重合体を感光成分とするフォトレジスト材料である。
That is, 1 the present invention provides 1+CU, -C represented by the general formula (I)
It is a photoresist material whose photosensitive component is a high molecular weight polymer having a molecular weight of 5,000 or more and containing a +- partial structure as a structural unit.

本発明に用いる高分子重合体は、ヒドロキシル基および
アジドベンゾイル基を共に有する一般式(I[)に示さ
れる化合物を用いて、これを重合または共重合して得る
ことができる。
The high molecular weight polymer used in the present invention can be obtained by polymerizing or copolymerizing a compound represented by the general formula (I[) having both a hydroxyl group and an azidobenzoyl group.

CH2=C H クリレートまたはこのメタクリレート、2−ヒト本発明
に用いる高分子重合体の共重合成分は、通常の重合性不
飽和化合物であればほとんど全て使用可能であるが、中
でも(メタ)アクリル酸。
CH2=C H acrylate or this methacrylate, 2-human As the copolymerization component of the high molecular weight polymer used in the present invention, almost all ordinary polymerizable unsaturated compounds can be used, but among them (meth)acrylic acid .

マレイン酸、フマル酸、及びそれらのエステル。Maleic acid, fumaric acid, and their esters.

スチレン、アクリロニトリル、酢酸ビニル、アクリルア
ミド、塩化ビニル、N−ビニルピロリドン。
Styrene, acrylonitrile, vinyl acetate, acrylamide, vinyl chloride, N-vinylpyrrolidone.

N−ビニルカルバゾール等が好ましい。N-vinylcarbazole and the like are preferred.

また1本発明に用いる高分子重合体は、あらかじめ上記
の共重合成分を共重合させた後、これにパラ−アジド安
息香酸などを側鎖に付加して感光般式(I)で示す部分
構造の含有量は、高分子重合体に対して10重量係以上
が好ましく、この量が10重i悌未満では感光性が低下
する。
In addition, the high molecular weight polymer used in the present invention can be obtained by copolymerizing the above-mentioned copolymerization components in advance, and then adding para-azidobenzoic acid or the like to the side chain thereof to obtain a partial structure represented by the photosensitive general formula (I). The content is preferably 10% by weight or more relative to the high molecular weight polymer, and if this amount is less than 10% by weight, photosensitivity decreases.

また高分子重合体の分子量は5000以上が好ましく、
これ未満では感光性および硬化膜の耐工解してフォトレ
ジスト用感光液とするが、場合によつては三重項増感剤
として公知の化合物を適当量添加して感光液として使用
できる。このような増感剤としては5−ニトロアセナフ
テン、2−二トロフルオレン、1−ニトロピレン、シア
ノアクリジン等がある。
Further, the molecular weight of the high molecular weight polymer is preferably 5000 or more,
If the amount is less than this, the photosensitivity and processing resistance of the cured film will be reduced, resulting in a photosensitive solution for photoresists. However, in some cases, a suitable amount of a compound known as a triplet sensitizer may be added for use as a photosensitive solution. Examples of such sensitizers include 5-nitroacenaphthene, 2-nitrofluorene, 1-nitropyrene, and cyanoacridine.

このようにして調製されたフォトレジストは。The photoresist prepared in this way.

通常使用されている任意の支持体上に塗布される。Coated on any commonly used support.

支持体として例えは、銅、亜鉛、鉄、アルミニウム、ニ
ッケル、マクネシクム、カラス、シリコン等がある〇 塗布方法は、回転、浸漬、スプレー等の種々の方法を用
いることができる。
Examples of the support include copper, zinc, iron, aluminum, nickel, machinicum, crow, silicon, etc. Various coating methods such as rotation, dipping, and spraying can be used.

塗布後乾燥したフォトレジスト層は1選択的に露光した
後、通常の溶剤で現像するととKよシ未露光部を支持体
から除去して、所定の画像が形成される。
The coated and dried photoresist layer is selectively exposed to light and then developed with a common solvent to remove the unexposed areas from the support and form a predetermined image.

〔発明の効果〕〔Effect of the invention〕

本発明の7オトレジスト材料は、高分子中に特殊な官能
基を含むので、高分子重合体自身が高い感光性を有して
お9.また熱安定性が良好で保存性も優れている。さら
に、jll後後得られる画像も鮮明であシ、その硬化膜
の耐エツチング性も優れており、金属やガラス、シリコ
ン等の腐蝕液に対して極めて高い耐性を有している。
7. The photoresist material of the present invention contains a special functional group in the polymer, so the polymer itself has high photosensitivity. It also has good thermal stability and excellent storage stability. Furthermore, the image obtained after JLL is clear, and the cured film has excellent etching resistance, and has extremely high resistance to corrosive liquids for metals, glass, silicon, and the like.

〔実施例〕〔Example〕

以下、本発明を製造例、実施例および比較例によシ詳し
く説明する。
Hereinafter, the present invention will be explained in detail with reference to Production Examples, Examples, and Comparative Examples.

例中の部は重量部、分子量はGPC法による重量平均分
子量を表わす。
In the examples, parts are parts by weight, and molecular weights are weight average molecular weights determined by GPC method.

製造例1゜ エチルアクリレート30部、ベンジルメタクリレート2
5部、ターシャリイブチルパーオキシ−2−エチルヘキ
サノエート1部、メチルエチルケトン300部を仕込め
、窒素を吹込みつつ30分間室温に放置した後、攪拌し
ながら80℃に昇温し、5時間1合反応を行なった。反
応終了後内容物を多量のメタノール中に投入して反応物
を析出し、−過、乾燥を行い、続いてベンゼンとメタノ
ールを用いて3回再沈澱精製した。
Production example 1゜30 parts of ethyl acrylate, 2 parts of benzyl methacrylate
5 parts of tert-butylperoxy-2-ethylhexanoate and 300 parts of methyl ethyl ketone were charged, and after leaving at room temperature for 30 minutes while blowing nitrogen, the temperature was raised to 80°C while stirring, and for 5 hours. A reaction was carried out. After the reaction was completed, the contents were poured into a large amount of methanol to precipitate the reaction product, filtered and dried, and then purified by reprecipitation three times using benzene and methanol.

得られた重合体(2)の分子量は75000でToつた
O 製造例2 クリレート60部、酢酸ビニル20部、マレイン酸ジメ
チル20部、過酸化ベンゾイル1.5部、キシレン12
0m、メチルセロソルブ1sos1c仕込み、窒素を吹
き込みつつ攪拌しながら90″Cにて6時間重合反応を
行なった。反応終了後、製造例1と同様な方法により精
製した。
The molecular weight of the obtained polymer (2) was 75,000. Production Example 2: 60 parts of acrylate, 20 parts of vinyl acetate, 20 parts of dimethyl maleate, 1.5 parts of benzoyl peroxide, 12 parts of xylene.
The polymerization reaction was carried out at 90''C for 6 hours while stirring and blowing nitrogen into the solution.

得られた重合体の)の分子量は60. OOOで6うた
The molecular weight of the obtained polymer was 60. 6 songs with OOO.

製造例3 タクリレート70部、スチレン20部、メチルメタクリ
レート10部、アゾビスイソブチロニトリル1部、メチ
ルイソブチルケトン200部、トルエン100部を仕込
み製造例1と同様な方法によシ重合し、精製を行なった
Production Example 3 70 parts of tacrylate, 20 parts of styrene, 10 parts of methyl methacrylate, 1 part of azobisisobutyronitrile, 200 parts of methyl isobutyl ketone, and 100 parts of toluene were charged and polymerized in the same manner as in Production Example 1, and purified. I did this.

得られた重合体0の分子量は9 Q、 OOOであった
The molecular weight of the obtained polymer 0 was 9Q, OOO.

製造例4 攪拌機付きのフラスコにグリシジルメタクリレート50
部、イソブチルメタクリレート30部。
Production Example 4 Glycidyl methacrylate 50 in a flask with a stirrer
parts, 30 parts of isobutyl methacrylate.

メチルアクリレート20部、過酸化ベンゾイル2部、メ
チルエチルケトン200部を仕込み窒素を吹き込みなが
ら80°Cにて5時間重合反応を行なつた。反応終了後
、バラ−アジド安息香酸5B部。
20 parts of methyl acrylate, 2 parts of benzoyl peroxide, and 200 parts of methyl ethyl ketone were charged, and a polymerization reaction was carried out at 80°C for 5 hours while blowing nitrogen. After completion of the reaction, 5B parts of bara-azidobenzoic acid.

トリエチルペンジルアンモエクムクロIJ)”2部。2 parts.

−ヒドロキノン七ツメチルエーテル0.1部、メチルエ
チルケトン100部の溶液をフラスコ中に加え80″C
Kで5時間反応を行なった。反応終了後。
- A solution of 0.1 part of hydroquinone methyl ether and 100 parts of methyl ethyl ketone was added to the flask and heated to 80"C.
The reaction was carried out with K for 5 hours. After the reaction is complete.

製造例1と同様な方法によシ精製した。Purification was performed in the same manner as in Production Example 1.

得られた重合体■の分子量は75.000でおった。The molecular weight of the obtained polymer (1) was 75,000.

実施例1〜6 第1表に示すように製造例1〜4で得られた重合体(2
)〜■)をシクロヘキサノンを用いて10重量幅となる
ように溶解し、感光液とした。またこの時第1表に示す
ように増感剤として5−ニトロアセナフテン(NA)、
2−二トロフルオレン(NF)を重合体く対して10重
量係添加した感光液も調製した。
Examples 1-6 As shown in Table 1, the polymers (2
) to ■) were dissolved using cyclohexanone to give a weight range of 10% to obtain a photosensitive solution. At this time, as shown in Table 1, 5-nitroacenaphthene (NA) was used as a sensitizer.
A photosensitive solution was also prepared in which 2-nitrofluorene (NF) was added in an amount of 10% by weight based on the polymer.

これらの感光液を銅基板上に厚さ2Pとなるように回転
塗布し、乾燥した後ネガマスクパターン及びコダックス
テ、ブタブレットNOを重ね2にW超高圧水銀灯にて6
5αの距離から10秒間露光した後、トリクロルエチレ
ンにて現像した。さらに120°Cにて10分間放置し
た後422ボーメの塩化第二鉄溶液にてエツチングを行
なった。感光液の保存安定性は25°Cで6ケ月間靜置
試験を行ない、感光層の熱安定性は80°Cで30分間
の加熱試験を行ない、耐酸性は上記エツチング液による
硬化膜の変化を観察した。以上の結果を第1表に示す。
These photosensitive liquids were spin-coated onto a copper substrate to a thickness of 2P, and after drying, a negative mask pattern, Kodakste, and Butalt No.
After exposure for 10 seconds from a distance of 5α, development was performed with trichlorethylene. After being left at 120°C for 10 minutes, etching was performed using a 422 Baume ferric chloride solution. The storage stability of the photosensitive solution was determined by a storage test at 25°C for 6 months, the thermal stability of the photosensitive layer was determined by a heating test at 80°C for 30 minutes, and the acid resistance was determined by the change in the cured film due to the above etching solution. observed. The above results are shown in Table 1.

比較例1〜3 第1表に示すように、感光性重合体として、重合度50
0のポリケイ皮酸ビニル■、Eと増感剤。
Comparative Examples 1 to 3 As shown in Table 1, the photosensitive polymer had a polymerization degree of 50.
0 polyvinyl cinnamate ■, E and sensitizer.

製造例1に準じて合成した分子量3500の重合体■を
それぞれ用いて、実施例と同様に行ない試験をした。そ
の結果を第1表に示す。
Tests were carried out in the same manner as in the examples using each of the polymers (1) having a molecular weight of 3,500 synthesized according to Production Example 1. The results are shown in Table 1.

1)感度はステップタブレットの段数を示し、数値が大
きいほど高感度である。
1) Sensitivity indicates the number of steps on the step tablet, and the larger the number, the higher the sensitivity.

2)O:全く変化なし X:膨潤または部分剥離 3ンO:性能に変化なし X:性能が著しく低下 4)O:性能に変化なし Δ:3ケ月で性能低下 第1表の結果から明らかなように、実施例のものは比較
例のものより著しく高感度であ)、シかも耐酸性、熱安
定性および保存安定性も良好であることがわかる。
2) O: No change at all X: Swelling or partial peeling 3) O: No change in performance As can be seen, the samples of Examples have significantly higher sensitivity than those of Comparative Examples), and also have good acid resistance, thermal stability, and storage stability.

Claims (1)

【特許請求の範囲】 一般式( I )で示す ▲数式、化学式、表等があります▼・・・・・・( I
) 〔式中R_1は水素原子または炭素数1〜2のアルキル
基を表わし、R_2は水素原子、炭素数1〜3のアルキ
ル基または炭素数1〜3のアルコキシ基を表わす。〕 部分構造を構造単位に含む分子量5000以上の高分子
重合体を感光成分とするフォトレジスト材料。
[Claims] There are mathematical formulas, chemical formulas, tables, etc. represented by the general formula (I).
) [In the formula, R_1 represents a hydrogen atom or an alkyl group having 1 to 2 carbon atoms, and R_2 represents a hydrogen atom, an alkyl group having 1 to 3 carbon atoms, or an alkoxy group having 1 to 3 carbon atoms. ] A photoresist material whose photosensitive component is a high molecular weight polymer having a molecular weight of 5,000 or more and containing a partial structure as a structural unit.
JP8009085A 1985-04-17 1985-04-17 Photoresist material Pending JPS61239245A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8009085A JPS61239245A (en) 1985-04-17 1985-04-17 Photoresist material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8009085A JPS61239245A (en) 1985-04-17 1985-04-17 Photoresist material

Publications (1)

Publication Number Publication Date
JPS61239245A true JPS61239245A (en) 1986-10-24

Family

ID=13708498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8009085A Pending JPS61239245A (en) 1985-04-17 1985-04-17 Photoresist material

Country Status (1)

Country Link
JP (1) JPS61239245A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017047680A1 (en) * 2015-09-16 2017-03-23 国立大学法人東京大学 Copolymer and production method therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017047680A1 (en) * 2015-09-16 2017-03-23 国立大学法人東京大学 Copolymer and production method therefor
JPWO2017047680A1 (en) * 2015-09-16 2018-08-30 国立大学法人 東京大学 Copolymer and process for producing the same
TWI689523B (en) * 2015-09-16 2020-04-01 國立大學法人東京大學 Copolymer and its preparation method

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