JPS61236181A - Driving circuit for semiconductor laser - Google Patents
Driving circuit for semiconductor laserInfo
- Publication number
- JPS61236181A JPS61236181A JP60077821A JP7782185A JPS61236181A JP S61236181 A JPS61236181 A JP S61236181A JP 60077821 A JP60077821 A JP 60077821A JP 7782185 A JP7782185 A JP 7782185A JP S61236181 A JPS61236181 A JP S61236181A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- current
- semiconductor laser
- pulse signal
- peak value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光通信システムに使用する半導体レーザの駆
動回路に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a driving circuit for a semiconductor laser used in an optical communication system.
半導体レーザな用いた光通信システムでは、−4のバイ
アス電流を加え、これにパルス信号電流を重畳して、変
W4す行なう。発振しきい値電流は温度変動、半導体レ
ーザの劣化により大きく変化するので、通常バイアス電
流を自動制御して安定化を図っている。自動制御すべき
目標値はバイアス電流にパルス信号電流が1畳した波形
のピーク値である。In an optical communication system using a semiconductor laser, a bias current of -4 is added and a pulse signal current is superimposed on this to perform the change W4. Since the oscillation threshold current changes greatly due to temperature fluctuations and deterioration of the semiconductor laser, the bias current is usually automatically controlled to stabilize it. The target value to be automatically controlled is the peak value of the waveform obtained by multiplying the bias current by 1 tatami of the pulse signal current.
ところで、本発明の対象とする半導体レーザ駆動回路は
、半導レーザのカソードと負電圧源との間に並列にバイ
アス電流制御回路とパルス信号電圧・電流変換回路とを
設けたものであるから、重畳電流を直接検出できず、何
らかの方法でパルス信号電流の平均値を一検出し、この
値をピーク値に換算した後、バイアス電流値に加算して
重畳電流のピーク値を求めて、安定化な図るようにして
いた。By the way, since the semiconductor laser drive circuit to which the present invention is directed is one in which a bias current control circuit and a pulse signal voltage/current conversion circuit are provided in parallel between the cathode of the semiconductor laser and the negative voltage source, The superimposed current cannot be detected directly, so the average value of the pulse signal current is detected by some method, this value is converted to a peak value, and then added to the bias current value to obtain the peak value of the superimposed current and stabilized. I was trying to do something.
上記の、個別的にパルス信号電流平均値、バイアス電流
値を求めて加算する方法では、入力するパルス信号電圧
のマーク率が変化すると、パルス信号電流平均値が変わ
るので、正しいビ−り値な与えず、半導体レーザ電流の
安定化ができない欠点があった。In the above method of calculating and adding the average pulse signal current value and bias current value individually, if the mark rate of the input pulse signal voltage changes, the average pulse signal current value changes, so the correct beam value cannot be determined. However, there was a drawback that the semiconductor laser current could not be stabilized.
本発明の目的は、上記の欠点を除去し半導体レーザ駆動
回路に直接ピーク電流値検出回路を組込み、パルス信号
電圧のマーク率Kか〜わらず、安定した光出力を得るこ
とのできる回路を提供することにある。An object of the present invention is to provide a circuit that eliminates the above drawbacks, incorporates a peak current value detection circuit directly into a semiconductor laser drive circuit, and can obtain stable optical output regardless of the mark rate K of the pulse signal voltage. It's about doing.
本発明の対象とする半導体レーザ駆動電流回路は、第1
図に示すように、半導体レーザ3のカソードと負電圧源
(−E)との間に並列にパルス信号電圧・電流変換回路
1とバイアス電流制御回路2とが接続された回路である
。本発明では前記半導体レーザ3のアノードとアース間
に電流・電圧変換回路4とこの変換回路4の出力電圧の
ピーク値を検出するピーク値検出回路5とを設ける。ピ
ーク値検出回路5の出力値がバイアス電流を制御する自
動制御ループの目標値として供給される。The semiconductor laser drive current circuit that is the subject of the present invention has a first
As shown in the figure, a pulse signal voltage/current conversion circuit 1 and a bias current control circuit 2 are connected in parallel between the cathode of a semiconductor laser 3 and a negative voltage source (-E). In the present invention, a current/voltage conversion circuit 4 and a peak value detection circuit 5 for detecting the peak value of the output voltage of the conversion circuit 4 are provided between the anode of the semiconductor laser 3 and the ground. The output value of the peak value detection circuit 5 is supplied as a target value to an automatic control loop that controls the bias current.
〔作用〕
本発明の回路では、アノード側にバイアス電流とパルス
信号電流との重畳した電流が流れ、この電流から直接的
にピーク電流値な検出することができる。この検出値を
目標値として半導体レーザのバイアス電流を制御すれば
、パルス信号電圧のマーク率が変化しても安定化が可能
に々る。[Function] In the circuit of the present invention, a current in which a bias current and a pulse signal current are superimposed flows on the anode side, and a peak current value can be directly detected from this current. By controlling the bias current of the semiconductor laser using this detected value as a target value, it is possible to stabilize the voltage even if the mark rate of the pulse signal voltage changes.
本発明の一実施例につき、図面な参照して説明する。第
2図が実施例の回路図である。An embodiment of the present invention will be described with reference to the drawings. FIG. 2 is a circuit diagram of the embodiment.
パルス信号電圧・電流変換回路1はトランジスタTR1
と抵抗RtとからなるエミッタホロワでトランジスタT
RIのベース端子にパルス信号電圧を印加することでパ
ルス信号電流を変化させる。バイアス電流制御回路2は
トランジスタTRzと抵抗R−とからなるエミッタホロ
ワで、トランジスタT&のペース端子にバイアス電流制
御電圧を印加する。半導レーザ電流を電圧に変化する電
流・電圧変換回路4としては簡単に抵抗R4の電圧、舜
下を利用している。ピーク値検出回路5はコンデンサC
IS+抵抗R5の並列回路の一端をダイオード5を介し
て抵抗R4の一端に接続した回路である。Pulse signal voltage/current conversion circuit 1 is transistor TR1
An emitter follower consisting of a transistor T and a resistor Rt.
The pulse signal current is changed by applying a pulse signal voltage to the base terminal of the RI. The bias current control circuit 2 is an emitter follower consisting of a transistor TRz and a resistor R-, and applies a bias current control voltage to the pace terminal of the transistor T&. The current/voltage conversion circuit 4 that changes the semiconductor laser current into voltage simply uses the voltage of the resistor R4. The peak value detection circuit 5 is a capacitor C
This is a circuit in which one end of a parallel circuit of IS+resistance R5 is connected to one end of resistor R4 via a diode 5.
本発明の回路において、パルス信号電圧が印加されない
ときKは、バイアス電流制御電圧によりきまる電流が半
導体レーザ3を流れ、抵抗R4の一端P点の電位が低下
しコンデンサC5はダイオードDsすとおる電流で充電
され、コンデンサC5の電圧がP点の電位と等しくなる
値で、充電が終了し一定値になる。In the circuit of the present invention, when the pulse signal voltage is not applied, a current determined by the bias current control voltage flows through the semiconductor laser 3, the potential at one end of the resistor R4 at point P decreases, and the capacitor C5 is a current flowing through the diode Ds. When the capacitor C5 is charged and the voltage becomes equal to the potential at point P, charging ends and becomes a constant value.
次にパルス信号電圧が印加され”H”になると、P点の
電位がさらに低下するので、コンデンサCsの電圧も低
下する。パルス信号電圧が1L″になると、P点電位が
上昇し、ダイオードD5はオフになる。抵抗R5が充分
高いと、コンデンサCSの電圧が維持されピーク値とし
て、端子Qからピーク検出値を出力するととKなる。時
定数CIIRBを適切に選択することで、パルス信号の
マー゛j′率にか瓦わらずレープ電“流のピーク値を検
出−することができる。Next, when a pulse signal voltage is applied and becomes "H", the potential at point P further decreases, so the voltage of capacitor Cs also decreases. When the pulse signal voltage reaches 1L'', the potential at point P rises and the diode D5 turns off.If the resistor R5 is high enough, the voltage of the capacitor CS is maintained and the peak detected value is output from the terminal Q as the peak value. By appropriately selecting the time constant CIIRB, the peak value of the rape current can be detected regardless of the margin j' ratio of the pulse signal.
以上、詳しく説明したように、本発明の半導体レーザ駆
動回路では、ピーク値電圧が常に出力され、しかもこの
値は入力されるパルス信号のマーク率に無関係である。As described above in detail, in the semiconductor laser drive circuit of the present invention, the peak value voltage is always output, and furthermore, this value is unrelated to the mark rate of the input pulse signal.
したがって、このピーク値電圧を利用して、半導体レー
ザ電流の安定化を図ることが容易にできるから、光通信
システムの信頼度向上に極めて有効である。Therefore, it is possible to easily stabilize the semiconductor laser current by utilizing this peak value voltage, which is extremely effective in improving the reliability of the optical communication system.
第1図は、本発明の構成を示すブロック図、第2図は一
実施例の回路図である。
1・・・パルス信号電圧・電流変換回路、2・・・バイ
アス電流制御回路、
3・・・半導体レーザ、
4・・・電流・電圧変換回路、
5・・・ピーク値検出回路。FIG. 1 is a block diagram showing the configuration of the present invention, and FIG. 2 is a circuit diagram of one embodiment. DESCRIPTION OF SYMBOLS 1... Pulse signal voltage/current conversion circuit, 2... Bias current control circuit, 3... Semiconductor laser, 4... Current/voltage conversion circuit, 5... Peak value detection circuit.
Claims (1)
レーザのカソードと負電圧源との間に、並列にパルス信
号電圧・電流変換回路とバイアス電流制御回路とが接続
されてなる半導体レーザ駆動回路において、前記半導体
レーザのアノードとアース間に接続された電流・電圧変
換回路と該変換回路の出力電圧のピーク値を検出するピ
ーク値検出回路とを具備したことを特徴とする半導体レ
ーザ駆動回路。In a semiconductor laser drive circuit, the anode of the semiconductor laser is connected to ground, and a pulse signal voltage/current conversion circuit and a bias current control circuit are connected in parallel between the cathode of the semiconductor laser and a negative voltage source, A semiconductor laser drive circuit comprising: a current/voltage conversion circuit connected between the anode of the semiconductor laser and ground; and a peak value detection circuit for detecting the peak value of the output voltage of the conversion circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60077821A JPS61236181A (en) | 1985-04-12 | 1985-04-12 | Driving circuit for semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60077821A JPS61236181A (en) | 1985-04-12 | 1985-04-12 | Driving circuit for semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61236181A true JPS61236181A (en) | 1986-10-21 |
Family
ID=13644699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60077821A Pending JPS61236181A (en) | 1985-04-12 | 1985-04-12 | Driving circuit for semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61236181A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07193306A (en) * | 1993-12-27 | 1995-07-28 | Nec Corp | Optical fiber amplifier and controlling method thereof |
-
1985
- 1985-04-12 JP JP60077821A patent/JPS61236181A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07193306A (en) * | 1993-12-27 | 1995-07-28 | Nec Corp | Optical fiber amplifier and controlling method thereof |
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