JPS6123367A - Light sensitive element - Google Patents
Light sensitive elementInfo
- Publication number
- JPS6123367A JPS6123367A JP59143341A JP14334184A JPS6123367A JP S6123367 A JPS6123367 A JP S6123367A JP 59143341 A JP59143341 A JP 59143341A JP 14334184 A JP14334184 A JP 14334184A JP S6123367 A JPS6123367 A JP S6123367A
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- bonding wire
- bonding
- light
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims 3
- 239000007789 gas Substances 0.000 abstract description 10
- 239000011521 glass Substances 0.000 abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000919 ceramic Substances 0.000 abstract description 7
- 238000007789 sealing Methods 0.000 abstract description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 230000002950 deficient Effects 0.000 abstract description 2
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 2
- 239000003822 epoxy resin Substances 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 229920000647 polyepoxide Polymers 0.000 abstract description 2
- 229920001187 thermosetting polymer Polymers 0.000 abstract description 2
- 239000005394 sealing glass Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は光導電膜上に速光性導電膜を設けた受光素子に
関し、特（；透光性導電膜とボンディングワイヤとの接
続部の信頼性を向上させた受光素子（＝係る。Detailed Description of the Invention [Technical field to which the invention pertains] The present invention relates to a light-receiving element in which a light-fast conductive film is provided on a photoconductive film, and particularly relates to A light-receiving element with improved reliability.
近年アモルファスシリコン等の光導電体膜と電荷転送素
子等の固体走査素子とを組合せた固体撮像素子等の受光
素子が開発されている。このような受光素子は、例えば
第１図に示すよう（＝、半導体プロセス（ユよシ形成さ
れた走査回路を有する半導体チップ（２）上には光導電
体膜（４）及び透光性導電膜（６）が形成されている。In recent years, light-receiving devices such as solid-state image sensors have been developed that combine photoconductor films such as amorphous silicon and solid-state scanning devices such as charge transfer devices. For example, as shown in FIG. A membrane (6) is formed.
半導体チップ（２）はセラミックパッケージ（８）内（
ニマウントされ、半導体チップ（２）４二設けられたポ
ンディングパッド（９）及び透光性導磁膜（６）はボン
ディングワイヤＱａ、（Ｉｉ＋＝よりまだパッケージＣ
二取付けられた端子ａ１へ電気的ζ二接続されている。The semiconductor chip (2) is placed inside the ceramic package (8) (
The bonding pad (9) and the light-transmitting magnetically conductive film (6) mounted on the semiconductor chip (2) 4 are connected to the bonding wire Qa, (Ii+=) and the package C
Two electrical connections are made to the two attached terminals a1.
そしてセラミックパッケージ（８） ｌ＝はガラス窓（
ｔＱが−ンダＵａｔ＝よシ気密封止されている。And ceramic package (8) l = glass window (
tQ is hermetically sealed.
透光性導電膜（６）とボンディングワイヤｔｔｉとのボ
ンディング（＝おいては、光導電体膜（４）がもろく透
光性４尾膜（６）とボンディングワイヤ１１→とのボン
ディング接続が困難である。このため、第２図及び第３
図或は第５図（−示すよう（−、ボンディング部（＝お
いて光導電体膜（４）と半導体チップ（２）との間で半
導体チップ（２）上にアルミニウムからなる補助パッド
ＩＺＩを設けると共（−１光導電膜（４）及び透光性導
電膜（６）１ニスリツト状等の開孔（２湯を形成してい
る。Bonding between the transparent conductive film (6) and the bonding wire tti (=In the case of bonding between the transparent conductive film (6) and the bonding wire tti, the photoconductor film (4) is fragile and the bonding connection between the transparent 4-tail film (6) and the bonding wire 11→ is difficult. Therefore, Figures 2 and 3
As shown in FIG. At the same time, a photoconductive film (4) and a transparent conductive film (6) are provided, and a slit-like opening (2) is formed.
そしてポーンディングワイヤ（財）を第４図に示すよう
に、透光性導電膜（６）を包み込むよう（ニボンデイン
グして、透光性４嘔膜（６）とボンディングワイヤＩと
を電気的に接続している。Then, as shown in Figure 4, the bonding wire is wrapped around the transparent conductive film (6) to electrically connect the transparent conductive film (6) and the bonding wire I. is connected to.
ところで、このよう（＝して形成された受光素子では、
前述したよう（＝ガラス窓をセラミックパッケージ（＝
気密封着する際、不活性ガス雰囲気例えば窒素中で気密
封着が行なわれる。このガラス窓の気密封着時（＝は、
ボンディング部も高温にな９、ボンディングワイヤが例
えばアルミニウムからなる場合（＝は透光性導電膜と接
している部分のボンディングワイヤが金属酸化物、例え
ば工・Ｔ・０（工ｎｄｉＬＩｒｎ−Ｔｉｎ・０ｘｉｄｅ
）からなる透光性導電膜中の酸素と反応する。このため
、ボンディングワイヤと透光性導電膜との電気的接続が
劣化する不都合がある。By the way, in the light-receiving element formed in this way,
As mentioned above (= Glass window is packaged with ceramic (=
When hermetically sealing, the hermetic sealing is performed in an inert gas atmosphere, for example, nitrogen. When this glass window is hermetically sealed (= is,
The bonding part also becomes high temperature 9. If the bonding wire is made of aluminum, for example (= means that the part of the bonding wire in contact with the transparent conductive film is made of a metal oxide, such as T.O.
) reacts with oxygen in the transparent conductive film. Therefore, there is a problem that the electrical connection between the bonding wire and the transparent conductive film deteriorates.
本発明は前述の不都合を解消し、透光性導電膜とボンデ
ィングワイヤとの電気的歳紐を良好にした受光素子を提
供するものでめる。The present invention solves the above-mentioned disadvantages and provides a light-receiving element in which the electrical relationship between the transparent conductive film and the bonding wire is improved.
本発明は、特（ニボンデイング部を還元性ガス中（：気
密封止した受光素子であり、還元性ガス中でガラス窓を
セラミックパッケージに封着すること（＝よシ、透光性
導電膜中の酸素でボンディングワイヤが酸化されること
が防止され、信頓性の高いボンディング接続部が得られ
る。The present invention is a light-receiving element in which the bonding part is hermetically sealed in a reducing gas, and a glass window is sealed to a ceramic package in a reducing gas. The oxygen contained therein prevents the bonding wire from being oxidized, resulting in a highly reliable bonding connection.
受光素子の概略構成及びボンディング部の構造は、上述
した背景技術のものと同様につき説明は省略する。以下
、本発明の要点であるボンディングワイヤ接続後におけ
るガラス窓封着時の熱処理とボン、ディングワイヤと透
光性導電膜間の電気抵抗Ｃ二ついて、実施例及び比較例
４二基づき′説明する。The general configuration of the light receiving element and the structure of the bonding portion are the same as those in the background art described above, and therefore their explanation will be omitted. Hereinafter, the key points of the present invention, such as heat treatment during glass window sealing after bonding wire connection and electrical resistance C between the bonding wire and the transparent conductive film, will be explained based on Example and Comparative Example 4. .
実施例１
ガラス窓を熱硬化盤のエポキシ樹脂を使用して、１５０
℃の温度で１時間の熱処理し、また気密封着する雰囲気
ガスとして水素を１０％含む窒素ガス（１０饅フオー、
ミングガス）を用いて気密封着した。Example 1 A glass window was made using a thermosetting epoxy resin.
Heat treatment was performed at a temperature of
Hermetic sealing was carried out using chlorine gas).
尚受光素子としては、透光性導電膜としてＩ−Ｔ・０を
使用し、またボンディングワイヤとしてアルミニウムを
用い、透光性導電膜とボンディングワイヤ４との接続を
２ケ所で行なった。そして気密封着前後で両ボンディン
グワイヤ間の抵抗値の変化ヲ調べた。サンプル１０個に
ついて調べた結果を表１≦＝示す。For the light-receiving element, IT.0 was used as the light-transmitting conductive film, aluminum was used as the bonding wire, and the light-transmitting conductive film and the bonding wire 4 were connected at two locations. The change in resistance value between both bonding wires was then investigated before and after hermetic sealing. Table 1≦=shows the results of examining 10 samples.
以下余白
表 １
実施例２
ガラス窓を融点２３５℃の５ｎ７ｓｂハンダ（ＳｂＪ１
３．５〜５チ）を用いて、２５０℃の温度で１０分間で
気密封着した。雰囲気ガスは純水素で行った。受光素子
の他の条件は実施例１と同じである。２本のボンディン
グワイヤ間の抵抗値の変化を、１０個のサンプルについ
て調べた結果な衣２０示す。Margin table below 1 Example 2 Glass windows were soldered with 5n7sb solder (SbJ1) with a melting point of 235℃.
3.5 to 5 cm) for 10 minutes at a temperature of 250°C. The atmosphere gas was pure hydrogen. Other conditions for the light receiving element are the same as in Example 1. Figure 20 shows the results of examining changes in resistance between two bonding wires for 10 samples.
比較例
実施例１と同一条件で雰囲気ガスを屋素とした場合の抵
抗値の変化を表３１ユ示す。また実施例２と同一条件で
雰囲気ガスを窒素とした場合の抵抗値の変化な衣４く；
示す。これら比較例もそれぞれ１０個のサンプルについ
て試験を行った。Comparative Example Table 31 shows the change in resistance value under the same conditions as in Example 1, using nitrogen as the atmospheric gas. Also, the change in resistance value when the atmospheric gas is nitrogen under the same conditions as in Example 2;
show. These comparative examples were also tested on 10 samples each.
表３
以下余白
表 ４
〔発明の効果〕
実施例１．２及び比較例から明らかなよりに、ガラス窓
をセラミックパッケージに気密封着する際の雰囲気ガス
として不活性ガスでおる窒素を用いたものでは、ボンデ
ィング依絖部の電気抵抗が大きく増加することが判る。Table 3 Below is a blank table 4 [Effects of the invention] As is clear from Example 1.2 and Comparative Examples, nitrogen gas, which is an inert gas, is used as the atmospheric gas when the glass window is hermetically sealed to the ceramic package. It can be seen that the electrical resistance of the bonding dependent portion increases significantly.
これに対し、還元性ガス中で気密封着したものでは、ボ
ンディング接続部の電気抵抗の増大を低く抑えることが
できる。On the other hand, if the bonding is performed in a reducing gas atmosphere and hermetically sealed, the increase in electrical resistance of the bonding connection portion can be suppressed to a low level.
従って本発明Ｃ二よれば、ボンディング接続部の抵抗増
大に起因する不良品の発生を少なくできる。Therefore, according to the present invention C2, it is possible to reduce the occurrence of defective products due to increased resistance of the bonding connection portion.
第１図は受光素子の＠面を示す図、第２図はボンディン
グ接続部の平面図、＄３図は第２図４＝おける接続部の
断面図、第４図はボンディングした状態を示す図、第５
図はボンディング殻続部の他の例を示す平面図である。
（２）・・・半導体チップ、 （４）・・・光４ｉＪ
、（６）・・・透光性導電膜、 （８）・・・セラミ
ックパッケージ、Ｉ・・・ボンディングワイヤ、 ｄｅ
・・・ガラス窓、（至）・・・補助パッド。
代理人 弁理士 則 近 ｙｆｔ 佑（ほか１名）第
１ 図
第 ！ 図
第 ３ 図
第′４ 図
第 ５ 図Figure 1 is a diagram showing the @ plane of the light receiving element, Figure 2 is a plan view of the bonding connection part, Figure 3 is a cross-sectional view of the connection part in Figure 2 4, and Figure 4 is a diagram showing the bonded state. , 5th
The figure is a plan view showing another example of the bonding shell connection part. (2)...Semiconductor chip, (4)...Optical 4iJ
, (6)...transparent conductive film, (8)...ceramic package, I...bonding wire, de
...Glass window, (to)...Auxiliary pad. Agent Patent Attorney Nori Chika YFT Yu (and 1 other person) Figure 1! Figure 3 Figure '4 Figure 5
Claims (3)
電体膜上に設けられた透光性導電膜および透光性導電膜
にボンディングされたボンディングワイヤとを備えた受
光素子において、前記ボンディングワイヤのボンディン
グ部で前記基板と前記光導電体膜との間に補助パッドを
備え、前記ボンディングワイヤは前記透光性導電膜と前
記補助パッドの双方に接続されてなり、且つボンディン
グ部は還元性ガス中に気密封止されていることを特徴と
する受光素子。(1) A light receiving element comprising a substrate, a photoconductor film provided on the substrate, a transparent conductive film provided on the photoconductor film, and a bonding wire bonded to the transparent conductive film. In the bonding portion of the bonding wire, an auxiliary pad is provided between the substrate and the photoconductor film, the bonding wire is connected to both the transparent conductive film and the auxiliary pad, and A light receiving element characterized in that the part is hermetically sealed in a reducing gas.
特徴とする特許請求の範囲第１項記載の受光素子。(2) The light-receiving element according to claim 1, wherein the light-transmitting conductive film is made of a metal oxide.
ることを特徴とする特許請求の範囲第２項記載の受光素
子。(3) The light receiving element according to claim 2, wherein the bonding wire is made of aluminum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59143341A JPS6123367A (en) | 1984-07-12 | 1984-07-12 | Light sensitive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59143341A JPS6123367A (en) | 1984-07-12 | 1984-07-12 | Light sensitive element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6123367A true JPS6123367A (en) | 1986-01-31 |
Family
ID=15336532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59143341A Pending JPS6123367A (en) | 1984-07-12 | 1984-07-12 | Light sensitive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6123367A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5818094A (en) * | 1995-01-20 | 1998-10-06 | Kyocera Corporation | Package for housing a semiconductor element |
| JP2008277395A (en) * | 2007-04-26 | 2008-11-13 | Kyocera Corp | Window member for optical element, package for housing optical element and optical module |
-
1984
- 1984-07-12 JP JP59143341A patent/JPS6123367A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5818094A (en) * | 1995-01-20 | 1998-10-06 | Kyocera Corporation | Package for housing a semiconductor element |
| JP2008277395A (en) * | 2007-04-26 | 2008-11-13 | Kyocera Corp | Window member for optical element, package for housing optical element and optical module |
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