JPS6123317A - Charged particle beam apparatus - Google Patents

Charged particle beam apparatus

Info

Publication number
JPS6123317A
JPS6123317A JP14396084A JP14396084A JPS6123317A JP S6123317 A JPS6123317 A JP S6123317A JP 14396084 A JP14396084 A JP 14396084A JP 14396084 A JP14396084 A JP 14396084A JP S6123317 A JPS6123317 A JP S6123317A
Authority
JP
Japan
Prior art keywords
stage
charged particle
signal
particle beam
vibration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14396084A
Other languages
Japanese (ja)
Inventor
Moriyuki Isobe
磯部 盛之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK filed Critical Jeol Ltd
Priority to JP14396084A priority Critical patent/JPS6123317A/en
Publication of JPS6123317A publication Critical patent/JPS6123317A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To accurately irradiate charged particle beam onto a material to be irradiated even when a stage has an inherent vibration by controlling the charged particle beam depending on a correction signal obtained through integration of only the frequency components based on the inherent vibration of the stage among output signals of an accelerometer. CONSTITUTION:A signal detected by an accelerometer 7 is amplified by an amplifier 7 and is then applied to a band-pass filter 9 which allows only the component based on the inherent vibration of stage 6 to pass through. The inherent vibration component of stage obtained through this filter 9 is integrated twice by a first integration circuit 10 and a second integral circuit 11, resulting in displacement based on the inherent vibration of the stage. After adjustment of amplitude with an amplitude adjusting amplifier 12, this signal is applied to an adder circuit 13 as a correction signal which cancels displacement of stage due to the vibration and is added with a drawing signal sent form a computer 14, and applied to a deflector 4 as a deflection signal for electron beam, whereby electron beam is irradiated accurately to the position on the drawing material 3.

Description

【発明の詳細な説明】 [産業上の利用分野1 本発明は、材料の定められた位置に荷電粒子線を照射す
る必要のある、例えば、電子線描画装置等に使用して好
適な荷電粒子線装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field 1] The present invention is directed to a charged particle beam suitable for use in, for example, an electron beam lithography system that requires irradiation of a charged particle beam onto a predetermined position of a material. Regarding line equipment.

[従来技術] 電子線描画装置では、被描画材料を載置したステージの
移動誤差があると、超微細な図形を高精度で描画するこ
とができない。特公昭49−24519号に記載の技術
においては、材料を載置したステージにレーザ干渉計の
ミラーを固定し、該ステージの移動量、変動量をレーザ
干渉計によって測定している。この測定された移動口、
変動量に応じた信号は電子線の偏向手段に供給され、電
子線の偏向によってステージの移動誤差等の補正を行う
ようにしている。
[Prior Art] In an electron beam drawing apparatus, if there is a movement error of a stage on which a material to be drawn is placed, ultrafine figures cannot be drawn with high precision. In the technique described in Japanese Patent Publication No. 49-24519, a mirror of a laser interferometer is fixed to a stage on which a material is placed, and the amount of movement and variation of the stage is measured by the laser interferometer. This measured moving mouth,
A signal corresponding to the amount of variation is supplied to an electron beam deflection means, and the movement error of the stage is corrected by deflecting the electron beam.

[発明が解決しようとする問題点] ところで、材料を載置したステージは、描画室内で移動
できる構成となっている関係上、そのステージの構造に
応じた固有の周波数で、描画室や電子光学カラムに対し
て振動している。このステージの固有振動による変位は
、数ナノメータ以下であるものの、ナノメータの精度で
描画を行う場合には、この固有振動によるステージ、す
なわち、材料の変位は無視できない。しかしながら、上
述したレーザ干渉計を使用した補正技術は、使用するレ
ーザの波長によって制限され、この技術による補正分解
能は、5nlIIPi!度である。この5nmの分解能
では、゛固有振動による変位分を検出することができな
いため、当然のことながら該変位分の補正はできず、ナ
ノメータ線幅を描画すると、描画線の直線性が損われる
ことになる。
[Problems to be Solved by the Invention] By the way, the stage on which the material is placed is configured to be movable within the drawing chamber, and therefore the stage has a unique frequency that corresponds to the structure of the stage and is vibrating against the column. Although the displacement due to the natural vibration of this stage is several nanometers or less, when writing is performed with nanometer precision, the displacement of the stage, that is, the material due to this natural vibration, cannot be ignored. However, the above-mentioned correction technique using a laser interferometer is limited by the wavelength of the laser used, and the correction resolution of this technique is 5nlIIPi! degree. With this resolution of 5 nm, it is not possible to detect the displacement due to natural vibration, so naturally it is not possible to correct the displacement, and if a nanometer line width is drawn, the linearity of the drawn line will be impaired. Become.

従って、本発明の主目的は、ナノメータ図形の描画が可
能な荷電粒子線装置を提供することである。
Therefore, the main object of the present invention is to provide a charged particle beam device capable of drawing nanometer figures.

[問題点を解決するための手段] 本発明に基づく荷電粒子線装置は、材料上に照射される
荷電粒子線を発生する手段と、該荷電粒子線の該材料上
の照射位置を移動させるための荷電粒子線偏向手段と、
該材料を載置するステージと、該ステージを駆動する手
段と、該ステージに設【ノられた加速度計ど、該加速度
計の出力信号が供給されるバンドパスフィルターと、該
フィルターの出力信号を積分する手段とを備え、該積分
した信号に基づいて、該荷電粒子線偏向手段により該材
料に照射される荷電粒子線を偏向するように構成したこ
とを特徴としている。
[Means for Solving the Problems] A charged particle beam device based on the present invention includes means for generating a charged particle beam to be irradiated onto a material, and for moving the irradiation position of the charged particle beam on the material. charged particle beam deflection means;
A stage on which the material is placed, a means for driving the stage, an accelerometer installed on the stage, a bandpass filter to which the output signal of the accelerometer is supplied, and a bandpass filter that receives the output signal of the filter. The method is characterized in that the charged particle beam deflecting means deflects the charged particle beam irradiated onto the material based on the integrated signal.

[実施例] 以下、本発明の実施例を添附図面に基づいて詳述づる。[Example] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

図面は本発明を使用した荷電粒子線描画装置を示してお
り、図中1は電子銃である。該電子銃から発生し、加速
された電子線は、集束レンズ2によってttA Fl、
 3上に細く集束される。該材料3上の電子線照射位置
は、静電偏向器4に印加される電圧に応じて変えられる
。該材料3は、駆動機構5によって移動されるステージ
6上に載置されている。該ステージ6には加速度計7が
取り付けられており、該加速度■7の出力信号は、増幅
器8に供給される。該増幅器8によって増幅された信号
は、バンドパスフィルタ9によって特定周波数成分の信
号のみが第1の積分回路10.第2の積分回路11に供
給されて2回積分される。該第2の積分回路11の出力
信号は、振幅調整増幅器12を介して加算回路13に供
給される。該加算回路13には、ステージ駆動機構4等
を制御する]ンピユータ14からD−A変換器15を介
して描画信号が供給されており、該加算回路13は、該
描画信号と該振幅調整増幅器12からの補正信号とを加
算して前記静電偏向器4に供給する。尚、該静電偏向器
、加速度計、バンドパスフィルタ、積分回路等の各回路
は、実際にはX方向とY方向用に夫々設けられているが
、説明を簡単にするために一方のみを図示している。
The drawing shows a charged particle beam lithography apparatus using the present invention, and numeral 1 in the drawing is an electron gun. The electron beam generated from the electron gun and accelerated is ttA Fl,
It is narrowly focused on 3. The electron beam irradiation position on the material 3 is changed depending on the voltage applied to the electrostatic deflector 4. The material 3 is placed on a stage 6 that is moved by a drive mechanism 5. An accelerometer 7 is attached to the stage 6, and an output signal of the acceleration 7 is supplied to an amplifier 8. The signal amplified by the amplifier 8 is filtered by a bandpass filter 9 so that only signals of specific frequency components are passed to the first integrating circuit 10 . The signal is supplied to the second integration circuit 11 and integrated twice. The output signal of the second integration circuit 11 is supplied to an addition circuit 13 via an amplitude adjustment amplifier 12. The adding circuit 13 is supplied with a drawing signal from a computer 14 (which controls the stage drive mechanism 4, etc.) via a D-A converter 15, and the adding circuit 13 receives the drawing signal and the amplitude adjustment amplifier. The correction signal from 12 is added and supplied to the electrostatic deflector 4. Note that each circuit, such as the electrostatic deflector, accelerometer, bandpass filter, and integration circuit, is actually provided for the X direction and the Y direction, but for the sake of simplicity, only one will be shown. Illustrated.

上述した如き構成において、材料3の描画は、ステージ
6の移動と、コンピュータ14からの描画信号の偏向器
4への供給に基づく電子線の偏向とによって行われる。
In the configuration as described above, drawing of the material 3 is performed by moving the stage 6 and deflecting the electron beam based on the supply of drawing signals from the computer 14 to the deflector 4.

ここで・、ステージ6は固有の周波数fで振動している
場合、その振動によるステージの変位ff1A、振動の
速度■、振動の加速度αは、振動の振幅を2Ao、振動
の角速度をω(2πf)とすれば、次のように表わすこ
とができる。
Here, when the stage 6 is vibrating at a unique frequency f, the stage displacement ff1A due to the vibration, the vibration speed ■, and the vibration acceleration α are the amplitude of the vibration 2Ao and the angular velocity of the vibration ω(2πf ), it can be expressed as follows.

、A=Ao sin ωt ■=ωAOCO5ωt α−=A’oω2sin(I)t 従って、振動の加速度が判明すれば、その加速度を2回
積分することにより、振動による変位量を求めることが
できる。本実施例において、加速度計7によって検出さ
れた信号は、増幅器8によって増幅された後、ステージ
の固有の振動に基づく成分のみを通過させるバンドパス
フィルタ9に供給される。該フィルタ9によって得られ
たステージ固有振動成分は、第1の積分回路10.第2
の積分回路11によって2回積分されてステージの固有
振動に基づく変位量が求められる。該変位量に対応した
信号は、振幅調整増幅器12によってその振幅が調整さ
れた後、該振動によるステージの変位を打′消す補正信
号として加□算回路13に供給され、コンピュータ14
からの描画信号と加算される。該加算信号は偏向器4に
電子線の・偏向信号として供給されることから、・ステ
ージの固有振動に基づくステージの変位に影響されず、
・被描画材料3の正確な位置に電子線を照射することが
可能となる。ここで、ステージの固有振動によるステー
ジの最大変位量2Aoは、ステージの固有振動の周波数
f lfi 70Hz 、加速度αがα−1On+oa
l (10x 10−3 cm/冗2)とすれば、 2A−2α/2πf −2x10x10J3/ (2xπX70)2=  1
,07 X 10−7 Cm となる。加速度計としては、分解能1moalのものが
あり、従って、本発明により、レーザ干渉翳1では不可
能な1ナノメータ以下の変位量の検出が可能となる。こ
の検出された変位間に相当する信号は、電子線の材vj
上の照射位置を変化させるために用いられ、その結果、
材わ1上の正確な位置に電子線を照射することができる
ことになり、ナノメータの精度で超微細図形の描画を行
うことができる。
, A=Ao sin ωt ■=ωAOCO5ωt α−=A′oω2 sin(I)t Therefore, if the acceleration of the vibration is known, the amount of displacement due to the vibration can be determined by integrating the acceleration twice. In this embodiment, the signal detected by the accelerometer 7 is amplified by an amplifier 8 and then fed to a bandpass filter 9 that passes only components due to the natural vibrations of the stage. The stage natural vibration component obtained by the filter 9 is transmitted to a first integrating circuit 10. Second
It is integrated twice by the integrating circuit 11 to determine the amount of displacement based on the natural vibration of the stage. The amplitude of the signal corresponding to the amount of displacement is adjusted by the amplitude adjustment amplifier 12, and then supplied to the addition circuit 13 as a correction signal to cancel the displacement of the stage due to the vibration, and then sent to the computer 14.
is added to the drawing signal from. Since the added signal is supplied to the deflector 4 as an electron beam deflection signal, it is not affected by the displacement of the stage based on the natural vibration of the stage.
- It becomes possible to irradiate an accurate position of the drawing material 3 with an electron beam. Here, the maximum displacement amount 2Ao of the stage due to the natural vibration of the stage is the frequency f lfi 70Hz of the natural vibration of the stage, and the acceleration α is α−1On+oa
If l (10x 10-3 cm/2), then 2A-2α/2πf -2x10x10J3/ (2xπX70)2= 1
,07×10-7 Cm. Some accelerometers have a resolution of 1 moal, and therefore, according to the present invention, it is possible to detect displacements of 1 nanometer or less, which is impossible with the laser interference screen 1. The signal corresponding to this detected displacement is the material vj of the electron beam.
It is used to change the irradiation position on the
The electron beam can be irradiated to a precise position on the material 1, and ultrafine figures can be drawn with nanometer precision.

尚、上)!iした実施例においては、ステージの変位の
補正信号を1qるため、単に加速度計をステージに取り
付けた構成を示したが、実際には、該ステージの変位、
移動量は従来と同様にレーザ干渉計によっても測定され
ており、ステージの固有振動Jズ外のステージの変位、
移動は、このレーザ”干渉泪による補正系ににって補正
される。又、上述した実施例は、幾多の変形が可能であ
る。例えば、加速度計からの信号を2回積分した補正信
号を描画信号と加算して単一の偏向器に供給づ−るよう
に構成したが、偏向器を2種設置ノ、一方にはIW画信
号を供給し、他方には、補正信号を供給するJ:うに構
成しても良い。更に、加速度計は一方向に1台設けたが
、ステージの固有振動が複数存在する場合には、周波数
の異なった固有振動毎に複数の加速度計等の検出系を設
【Jるか、1台の加速度t1の出力信号を通過帯域の異
なる複数のバンドパスフィルタに供給するかして、各振
動によるステージの変位量を検出し、その変位量の合成
信号によって電子線の偏向を行うようにしても良い。更
に又、本発明を電子線描画装置に使用した場合を例に説
明したが、本発明はイオンビーム描画装置にも適用でき
ると共に、超高分解能の走査電子顕微鏡等のステージの
制御系にも使用することができる。
Furthermore, above)! In the embodiment described above, a configuration was shown in which an accelerometer was simply attached to the stage in order to obtain a correction signal for the displacement of the stage, but in reality, the displacement of the stage,
The amount of movement is also measured by a laser interferometer as in the past, and the displacement of the stage outside the stage's natural vibration J,
The movement is corrected by this laser interference correction system. Also, the embodiment described above can be modified in many ways. For example, a correction signal obtained by integrating the signal from the accelerometer twice is used. Although the configuration is such that it is added to the drawing signal and supplied to a single deflector, it is also possible to install two types of deflectors, one to supply the IW image signal, and the other to supply the correction signal. Furthermore, although one accelerometer is provided in one direction, if there are multiple natural vibrations of the stage, multiple detection systems such as accelerometers may be installed for each natural vibration with a different frequency. The amount of displacement of the stage due to each vibration can be detected by either setting up a [J] or by supplying the output signal of one acceleration t1 to multiple band-pass filters with different passbands, and then detecting the amount of displacement of the stage due to each vibration. The electron beam may be deflected.Furthermore, although the present invention has been described using an example of an electron beam lithography system, the present invention can also be applied to an ion beam lithography system, and can also be applied to ultra-high resolution It can also be used in a control system for a stage of a scanning electron microscope or the like.

[効果1 以上詳述した如く、本発明は加速度計を使用し、該加速
度計の出力信号の内、ステージの固有振動に基づく周波
数成分のみを積分して補正信号を1q、この補正信号に
基づいて荷電粒子線を制御するように構成しているため
、該ステージに固有振動があっても、荷電粒子線を正確
に被照射材料上に照射することができる。
[Effect 1] As described in detail above, the present invention uses an accelerometer, integrates only the frequency component based on the natural vibration of the stage of the output signal of the accelerometer, and generates a correction signal of 1q based on this correction signal. Since the stage is configured to control the charged particle beam, even if the stage has natural vibration, the charged particle beam can be accurately irradiated onto the irradiated material.

【図面の簡単な説明】[Brief explanation of drawings]

添附図面は本発明の一実施例である電子線描画装置を示
す図である。 1・・・電子銃    2・・・集束レンズ3・・・被
描画材料  4・・・偏向器5・・・駆動機構   6
・・・ステージ7・・・加速度計   8・・・増幅器
9・・・バンドパスフィルタ 10.11・・・積分回路 12・・・振幅調整増幅器 13・・・加算回路  14・・・コンピュータ15・
・・D−A変換器 特許用E)人 日本電子株式会社 代表者 伊藤 −夫
The accompanying drawings are diagrams showing an electron beam lithography apparatus that is an embodiment of the present invention. 1... Electron gun 2... Focusing lens 3... Material to be drawn 4... Deflector 5... Drive mechanism 6
...Stage 7...Accelerometer 8...Amplifier 9...Band pass filter 10.11...Integrator circuit 12...Amplitude adjustment amplifier 13...Addition circuit 14...Computer 15.
・・D-A converter patent E) Mr. Ito, Representative of JEOL Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims]  材料上に照射される荷電粒子線を発生する手段と、該
荷電粒子線の該材料上の照射位置を移動させるための荷
電粒子線偏向手段と、該材料を載置するステージと、該
ステージを駆動する手段と、該ステージに設けられた加
速度計と、該加速度計の出力信号が供給されるバンドパ
スフィルターと、該フィルターの出力信号を積分する手
段とを備え、該積分した信号に基づいて、該荷電粒子線
偏向手段により該材料に照射される荷電粒子線を偏向す
るように構成した荷電粒子線装置。
means for generating a charged particle beam to be irradiated onto a material; a charged particle beam deflection means for moving the irradiation position of the charged particle beam on the material; a stage on which the material is placed; an accelerometer provided on the stage; a bandpass filter to which an output signal of the accelerometer is supplied; and a means for integrating the output signal of the filter; A charged particle beam device configured to deflect a charged particle beam irradiated onto the material by the charged particle beam deflection means.
JP14396084A 1984-07-11 1984-07-11 Charged particle beam apparatus Pending JPS6123317A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14396084A JPS6123317A (en) 1984-07-11 1984-07-11 Charged particle beam apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14396084A JPS6123317A (en) 1984-07-11 1984-07-11 Charged particle beam apparatus

Publications (1)

Publication Number Publication Date
JPS6123317A true JPS6123317A (en) 1986-01-31

Family

ID=15351052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14396084A Pending JPS6123317A (en) 1984-07-11 1984-07-11 Charged particle beam apparatus

Country Status (1)

Country Link
JP (1) JPS6123317A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0442966A1 (en) * 1988-11-14 1991-08-28 Amray, Inc. Vibration cancellation system for scanning electron microscopes
GB2321555A (en) * 1997-01-27 1998-07-29 Hitachi Ltd Charged particle beam apparatus
WO1999030346A1 (en) * 1997-12-11 1999-06-17 Philips Electron Optics B.V. Particle-optical apparatus provided with an acceleration sensor for the compensation of specimen vibrations
US7057193B2 (en) 2002-08-30 2006-06-06 Canon Kabushiki Kaisha Exposure apparatus
JP2006252800A (en) * 2005-03-08 2006-09-21 Jeol Ltd Scanning electron microscope
JP2009170352A (en) * 2008-01-18 2009-07-30 Jeol Ltd Oscillation canceller for electron beam apparatus

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0442966A1 (en) * 1988-11-14 1991-08-28 Amray, Inc. Vibration cancellation system for scanning electron microscopes
GB2321555A (en) * 1997-01-27 1998-07-29 Hitachi Ltd Charged particle beam apparatus
GB2321555B (en) * 1997-01-27 1999-12-22 Hitachi Ltd Charged particle beam apparatus
US6043490A (en) * 1997-01-27 2000-03-28 Hitachi, Ltd. Vibration cancellation system for a charged particle beam apparatus
WO1999030346A1 (en) * 1997-12-11 1999-06-17 Philips Electron Optics B.V. Particle-optical apparatus provided with an acceleration sensor for the compensation of specimen vibrations
US7057193B2 (en) 2002-08-30 2006-06-06 Canon Kabushiki Kaisha Exposure apparatus
JP2006252800A (en) * 2005-03-08 2006-09-21 Jeol Ltd Scanning electron microscope
JP4607624B2 (en) * 2005-03-08 2011-01-05 日本電子株式会社 Scanning electron microscope
JP2009170352A (en) * 2008-01-18 2009-07-30 Jeol Ltd Oscillation canceller for electron beam apparatus

Similar Documents

Publication Publication Date Title
US5155523A (en) Workpiece supporting mechanism
DE19515413C2 (en) Motor control device for use in an information recording and reproducing apparatus
US4464030A (en) Dynamic accuracy X-Y positioning table for use in a high precision light-spot writing system
US5049745A (en) Phase-compensating vibration cancellation system for scanning electron microscopes
US4948971A (en) Vibration cancellation system for scanning electron microscopes
EP1755001A1 (en) Electron beam position fluctuation measurement method, electron beam position fluctuation measurement device, and electron beam recording device
JPS6123317A (en) Charged particle beam apparatus
KR20000048159A (en) Servo control method, and its application in a lithographic projection apparatus
WO2000008416A1 (en) Device for determining a rotational speed
JP4272043B2 (en) Charged particle beam equipment
US5650628A (en) Simultaneous deflections in charged-particle beams
CN109709534A (en) A kind of vehicle chassis noise problem source positioning system and localization method
JPH0760657B2 (en) Electron beam exposure system
JPH06188181A (en) Charge particle beam lithography
JPS60117721A (en) Electron-beam exposure apparatus
JP5344947B2 (en) Charged particle beam drawing apparatus and charged particle beam drawing method
JPS6231488B2 (en)
JP2010192508A (en) Charged particle beam-drawing device and charged particle beam-drawing method
JPH10111300A (en) Scanning probe microscope
JPH04103044A (en) Optical axis controller
JPH01216530A (en) Moving stage for lithography device
JPS634697B2 (en)
WO1999030346A1 (en) Particle-optical apparatus provided with an acceleration sensor for the compensation of specimen vibrations
JPH02215120A (en) Distortion correction in charged particle beam lithography
JPH04180216A (en) Charged particle beam lithography