JPS61231758A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS61231758A JPS61231758A JP60073701A JP7370185A JPS61231758A JP S61231758 A JPS61231758 A JP S61231758A JP 60073701 A JP60073701 A JP 60073701A JP 7370185 A JP7370185 A JP 7370185A JP S61231758 A JPS61231758 A JP S61231758A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- solid
- polyimide
- coating layer
- resin coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920005989 resin Polymers 0.000 claims abstract description 16
- 239000011347 resin Substances 0.000 claims abstract description 16
- 239000011247 coating layer Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000003384 imaging method Methods 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 15
- 239000010410 layer Substances 0.000 abstract description 17
- 239000004642 Polyimide Substances 0.000 abstract description 12
- 229920001721 polyimide Polymers 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 238000001020 plasma etching Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000002161 passivation Methods 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 235000019892 Stellar Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、固体撮像装置のパッシベーション層構造に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a passivation layer structure for a solid-state imaging device.
本発明は、絶縁性基板上に作製された固体撮像装置にお
いて、最上部に、透明有機系樹脂コーティング層を形成
して前記固体撮像装置の表面の段差を緩和し、さらに該
透明有機系樹脂コーディング層上に、無機質薄膜を、ス
テラ／カバレッジ住良く形成し、しかもホト１工程で、
前記透明有機系樹脂コーティング層及び前記無機質薄膜
のパッド部分に、パッドオープン孔を設けることにより
、耐湿性あるいは耐環境性のすぐれた固体撮像装置を・
ホト１工程だけで作製できるようにしたものである。The present invention provides a solid-state imaging device fabricated on an insulating substrate, in which a transparent organic resin coating layer is formed on the top to reduce level differences on the surface of the solid-state imaging device, and the transparent organic resin coating layer is further provided. An inorganic thin film is formed on the layer with good stellar/coverage, and in one photo process,
By providing pad open holes in the pad portions of the transparent organic resin coating layer and the inorganic thin film, a solid-state imaging device with excellent moisture resistance or environmental resistance can be obtained.
It can be manufactured with only one photo process.
従来の薄膜トランジスタを用いた固体撮像装置は第１６
同面体素子及び材料フン７アレンス予稿集（Ｋｘｔｅｎ
ａｅｄ Ａｂｓｔｒａｃｔｓ ｏｆ ｔｈｅ１６ｔｈ
Ｃｏｎｆｅｒｅｎｃｅ ｏｎ ５ｏｌｉｄ
ＢｔａｔｅＤｅｖｉｃｅｓ ａｎｄ Ｍａｔ
ｅｒｉａｌｓ、Ｋｏ’ｂｅ、１９８４、ｐｐ、５５９−
５６２）に記載されているように、固体撮像装置の最上
部にパッジページヨシ層を設けるものであった。The solid-state imaging device using conventional thin film transistors is the 16th
Isohedral elements and materials
aed Abstracts of the16th
Conference on 5olid
BtateDevices and Mat
erials, Ko'be, 1984, pp, 559-
562), a pad page reed layer was provided on the top of the solid-state imaging device.
〔発明が解決しようとする問題点及び目的〕しかし・前
述の従来技術では、有機系樹脂を用いてパッシベーショ
ン層を一層だけ設けるのが一般的である。有機系樹脂は
一般的に、無機質薄膜（例えば、二酸化ケイ素）に比べ
て透湿性が大きい。そのため、固体撮像装置の耐湿性の
向上は期待できない。例えば、アルミ配線の腐蝕のよう
な故障が発生する。一方、ワイヤボンディング後に、シ
リコン系樹脂あるいはエポキシ系樹脂により完全にモー
ルドしてしまう方法も考えられるが、固体撮像装置のよ
うに光を電気に変換するような装置の場合には完全に透
明な膜でパッシベーション層を形成しなければならない
。従９て、前記シリコン系樹脂あるいはエポキシ系樹脂
でのモールドはできない。そこで本発明はこのような問
題点を解決するもので、その目的とするところは、耐湿
性及び信頼性の高い固体撮像装置を提供するところにあ
る。[Problems and Objectives to be Solved by the Invention] However, in the prior art described above, it is common to provide only one passivation layer using an organic resin. Organic resins generally have higher moisture permeability than inorganic thin films (eg, silicon dioxide). Therefore, improvement in the moisture resistance of solid-state imaging devices cannot be expected. For example, failures such as corrosion of aluminum wiring occur. On the other hand, it is possible to completely mold with silicone resin or epoxy resin after wire bonding, but in the case of devices that convert light into electricity, such as solid-state imaging devices, a completely transparent film is required. A passivation layer must be formed. Therefore, molding with the silicone resin or epoxy resin is not possible. The present invention is intended to solve these problems, and its purpose is to provide a solid-state imaging device with high moisture resistance and reliability.
本発明の固体撮像装置は、絶縁性基板上に、受光素子と
、該受光素子を駆動させる薄膜トランジスタとを形成し
て成る固体撮像装置において、最上部に透明有機系樹脂
コーティング層上に、無機質薄膜を有し、さらに前記透
明有機系樹脂コーディング層及び無機質薄膜のパッド部
分に、パッドオープン孔を設けたことを特徴とする◇〔
作 用〕
本発明の上記の構成によれば、アルミ配線の段差が、段
差被覆性の極めて良好な透明有機系樹脂コーティング層
によって緩和されるので、透湿性の極めて小さい無機質
薄膜を、ステップカバレッジ性良く形成することができ
る。また、最上部の無機質薄膜をマスクとして透明有機
系樹脂コーティング層をエツチングすることができるの
で、ホト１工程だけで、パッドオープン孔を設けること
ができる。The solid-state imaging device of the present invention includes a light-receiving element and a thin film transistor for driving the light-receiving element formed on an insulating substrate. ◇[
[Function] According to the above configuration of the present invention, the step difference in the aluminum wiring is alleviated by the transparent organic resin coating layer which has extremely good step coverage. Can be formed well. Furthermore, since the transparent organic resin coating layer can be etched using the uppermost inorganic thin film as a mask, pad open holes can be provided with only one photo process.
第１図は、本発明の実施例における構造断面図であり、
同図（ａ）は薄膜トランジスタ及び受光素子付近を示し
、同図（ｂ）はパッドオープン孔の部分を示す図である
０ここでは、多結晶シリコン薄膜トランジスタ及び、ａ
−Ｓｌ：Ｕ（水素化アモルファスＳ１）受光素子を用い
た場合の実施例を述べる。同図（α）において１は絶縁
性基板、２は多結晶シリコン、３はゲート酸化膜、４は
ゲート電極、５は層間絶縁膜、６はアルミ電極、７はα
−３１：Ｈ２Ｓは透明電極（工ＴＯなど）である０パツ
シベ一シヨン層は９と１０であり、９は透明宥機系樹脂
コーティング層であり、ここでは半導体に使用できる程
度に高純度なポリイミド（例えばＮαが０．５℃ｐｍ以
下）を用いる。ポリイミド層の形成方法としては、ディ
ッピングあるいはスピン塗布法がある。キーア後のポリ
イミドの透明度は可視光波長領域（４５０７１笥〜７０
０ ｘｒｎ ）で、透過率は９０％以下は必要である。FIG. 1 is a structural sectional view in an embodiment of the present invention,
Figure (a) shows the thin film transistor and the vicinity of the light-receiving element, and figure (b) shows the area of the pad open hole.
An example will be described in which a -Sl:U (hydrogenated amorphous S1) light receiving element is used. In the same figure (α), 1 is an insulating substrate, 2 is polycrystalline silicon, 3 is a gate oxide film, 4 is a gate electrode, 5 is an interlayer insulating film, 6 is an aluminum electrode, and 7 is α
-31: H2S is a transparent electrode (TO, etc.). Passive layers are 9 and 10, and 9 is a transparent resin coating layer. (For example, Nα is 0.5° C. pm or less). Methods for forming the polyimide layer include dipping and spin coating. The transparency of polyimide after Kier is in the visible light wavelength range (45071~70
0 xrn ), and the transmittance must be 90% or less.
１０は無機質薄膜である。該無機質薄膜としては、二酸
化ケイ素（ｓｌｏ、）あるいは窒化膜（ｓ１３Ｎ、）な
どがある。α−３ｉ：Ｈは約６５０℃以上で欠陥を補償
している水素が放出されるため、光電性が劣化する。従
って、ＳｉＯ□やＳ ｉ、 Ｎ、の形成にはプラズマＣ
ＶＤ法あるいはスパッタ法などのように低温（約３００
℃以下）の形成方法で行なわなケレばならない。同図（
ｂ）はパッドオーブン孔ノ部分である◇１１はパッドオ
ープン孔を示し、１２はワイヤボンディングを示してい
る。パッドオープン孔に注目して、本発明による二層の
パッシベーション層の形成方法を、第２図に従って説明
する◇第２図（ｈ）において、薄膜トランジスタ及び受
光素子まで作りこまれた基板に、スピン塗布法などによ
り、ポリイミド層９を形成する。ポリイミド溶液の粘度
あるいはスピンナーの回転数などにより、任意の膜厚を
得ることができる◇前述したとおり、α−３ＩＨの特性
劣化をさける為に３００℃以下でキエアする。その上に
プラズマＣＶＤ法あるいはスパッタ法などで３１０．膜
１ｏを堆積させる。さらにフォトレジスト層を塗布し、
パッドオーブンのレジストマスク１３を形成する。次に
同図（ｂ）に示すように、前記５１０２膜を７ツ酸（Ｈ
Ｆ）水溶液などでエツチングする。この時ポリイミドは
７ツ酸水溶液にはエツチングされない０そこで続いてｏ
２ プラズマエツチングを行なう。同時にレジストマス
ク１３もエツチングされる。従ってポリイミドのエツチ
ングとレジスト剥離を同時に行なうことができる。ポリ
イミドがエツチングされる前にレジストマスクがなくな
っても、５１０２膜がエツチングマスクの役目をはたす
為、まったく問題は起こらない。10 is an inorganic thin film. Examples of the inorganic thin film include silicon dioxide (slo) or nitride film (s13N). In α-3i:H, since hydrogen compensating for defects is released at temperatures above about 650° C., photoelectricity deteriorates. Therefore, plasma C is required for the formation of SiO□, Si, N,
Low temperature (approximately 300℃) such as VD method or sputtering method
(℃ or below). Same figure (
b) is the pad oven hole portion. ◇11 indicates a pad open hole, and 12 indicates wire bonding. The method for forming a two-layer passivation layer according to the present invention will be explained with reference to FIG. 2, focusing on pad open holes. ◇ In FIG. A polyimide layer 9 is formed by a method or the like. Any film thickness can be obtained depending on the viscosity of the polyimide solution or the rotational speed of the spinner.◇As mentioned above, in order to avoid deterioration of the properties of α-3IH, the temperature is 300°C or lower. On top of that, 310. Deposit film 1o. Further apply a photoresist layer,
A resist mask 13 for a pad oven is formed. Next, as shown in the same figure (b), the 5102 film was
F) Etching with an aqueous solution. At this time, the polyimide is not etched by the aqueous solution of hexanic acid.
2 Perform plasma etching. At the same time, the resist mask 13 is also etched. Therefore, polyimide etching and resist stripping can be performed simultaneously. Even if the resist mask disappears before the polyimide is etched, no problem occurs because the 5102 film serves as an etching mask.
以上述べたように、本発明によれば、段差被覆性の極め
て良好なポリイミドなどの透明有機系樹脂コーティング
層を用いてアルミ配線の段差を緩和し、その上に本来ス
テップカバレッジ性の悪いプラズマＣ！ＶＤＳｉＯ，膜
やスパンタＳｉｎ、膜を、段差部でのマイクロクラック
などが生じないようにステップカバレッジ性良く形成さ
れることとなり、これらの無機質薄膜の特徴であるとこ
ろの良好な耐湿性を充分に活用することが可能となり、
従って、耐湿性のよい、高信頼性の固体撮像装置を実現
できるという大きな効果を有するものである。しかも、
従来どおりの工程数であり、ホト工程が増えることはな
い。このように本発明は、有機系樹脂及び無機質薄膜の
特徴を最大限に活用し、しかもホト工程数を増やすこと
なく高信頼性の固体撮像装置を提供するものである。As described above, according to the present invention, a transparent organic resin coating layer such as polyimide, which has extremely good step coverage, is used to alleviate the steps of the aluminum wiring, and a plasma coating layer, which originally has poor step coverage, is coated on top of the layer. ! The VDSiO film and spunter Sin film are formed with good step coverage to prevent microcracks from occurring at the stepped portions, making full use of the good moisture resistance that is a characteristic of these inorganic thin films. It becomes possible to
Therefore, it has the great effect of realizing a highly reliable solid-state imaging device with good moisture resistance. Moreover,
The number of steps remains the same as before, and there is no increase in the number of photo steps. As described above, the present invention provides a highly reliable solid-state imaging device that makes full use of the characteristics of organic resins and inorganic thin films, and without increasing the number of photo steps.
第１図（α）と（ｂ）は本発明の固体撮像装置の主要断
面図である＠
第２図（α）から（１）は、本発明の固体撮像装置の作
製方法の一実施例を示す工程図である。
１・・・絶縁性基板
６・・・アルミ電極
９・・・透明有機系コーティング層（ポリイミド）１０
・・・無機質薄膜（ｓ１ｏ２）
以 上Figures 1 (α) and (b) are main cross-sectional views of the solid-state imaging device of the present invention @ Figures 2 (α) to (1) show an example of the method for manufacturing the solid-state imaging device of the present invention. FIG. 1... Insulating substrate 6... Aluminum electrode 9... Transparent organic coating layer (polyimide) 10
...Inorganic thin film (s1o2)
Claims (1)
薄膜トランジスタとを形成して成る固体撮像装置におい
て、最上部に透明有機系樹脂コーティング層を有し、該
透明有機系樹脂コーティング層上に、さらに無機質薄膜
を有し、さらに、前記透明有機系樹脂コーティング層及
び無機質薄膜のパッド部分に、パッドオープン孔を設け
たことを特徴とする固体撮像装置。In a solid-state imaging device comprising a light receiving element and a thin film transistor for driving the light receiving element formed on an insulating substrate, a transparent organic resin coating layer is provided on the top, and a transparent organic resin coating layer is formed on the transparent organic resin coating layer. . A solid-state imaging device, further comprising an inorganic thin film, and further comprising a pad open hole provided in a pad portion of the transparent organic resin coating layer and the inorganic thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60073701A JP2707533B2 (en) | 1985-04-08 | 1985-04-08 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60073701A JP2707533B2 (en) | 1985-04-08 | 1985-04-08 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61231758A true JPS61231758A (en) | 1986-10-16 |
| JP2707533B2 JP2707533B2 (en) | 1998-01-28 |
Family
ID=13525780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60073701A Expired - Lifetime JP2707533B2 (en) | 1985-04-08 | 1985-04-08 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2707533B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010258261A (en) * | 2009-04-27 | 2010-11-11 | Seiko Epson Corp | Method of manufacturing photoelectric converter |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56138362A (en) * | 1980-03-31 | 1981-10-28 | Canon Inc | Photoelectric converter |
| JPS57141977A (en) * | 1981-11-25 | 1982-09-02 | Shunpei Yamazaki | Photoelectric transducing semiconductor device |
| JPS59117277A (en) * | 1982-12-24 | 1984-07-06 | Hitachi Ltd | Photo detector |
| JPS59109157U (en) * | 1983-01-14 | 1984-07-23 | 沖電気工業株式会社 | Same size reading sensor |
| JPS6022881A (en) * | 1983-07-19 | 1985-02-05 | Seiko Epson Corp | Solid-state image sensor |
-
1985
- 1985-04-08 JP JP60073701A patent/JP2707533B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56138362A (en) * | 1980-03-31 | 1981-10-28 | Canon Inc | Photoelectric converter |
| JPS57141977A (en) * | 1981-11-25 | 1982-09-02 | Shunpei Yamazaki | Photoelectric transducing semiconductor device |
| JPS59117277A (en) * | 1982-12-24 | 1984-07-06 | Hitachi Ltd | Photo detector |
| JPS59109157U (en) * | 1983-01-14 | 1984-07-23 | 沖電気工業株式会社 | Same size reading sensor |
| JPS6022881A (en) * | 1983-07-19 | 1985-02-05 | Seiko Epson Corp | Solid-state image sensor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010258261A (en) * | 2009-04-27 | 2010-11-11 | Seiko Epson Corp | Method of manufacturing photoelectric converter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2707533B2 (en) | 1998-01-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4152195A (en) | Method of improving the adherence of metallic conductive lines on polyimide layers | |
| US20050248014A1 (en) | Resin-encapsulated semiconductor apparatus and process for its fabrication | |
| JP2773660B2 (en) | Semiconductor device | |
| JPH10270611A (en) | Resin sealed semiconductor device and manufacture thereof | |
| JP2001230505A (en) | Electric wiring of integrated circuit and its manufacturing method | |
| JPS61231758A (en) | Solid-state image pickup device | |
| JPH03179778A (en) | Insulating board for forming thin film semiconductor | |
| JP2631659B2 (en) | Semiconductor device | |
| JPH038581B2 (en) | ||
| JPS6373559A (en) | Solid-state image sensing device | |
| JP2000323691A (en) | Semiconductor image sensor | |
| JPH05234991A (en) | Semiconductor device | |
| JPS62232962A (en) | Solid-state image sensing device | |
| JPS6197839A (en) | Manufacture of semiconductor device | |
| JPS58135645A (en) | Manufacture of semiconductor device | |
| JPS6341072A (en) | Solid state image sensing device | |
| JPH02146750A (en) | Semiconductor integrated circuit and manufacture thereof | |
| JPH0419707B2 (en) | ||
| JPH0629400A (en) | Semiconductor device and manufacture thereof | |
| JPH01183845A (en) | Manufacture of solid-state image sensing device | |
| JPS62221149A (en) | Manufacture of solid-state image pickup device | |
| JPS615550A (en) | Semiconductor device and manufacture thereof | |
| JP2942063B2 (en) | Method for manufacturing semiconductor device | |
| JPS62221150A (en) | Solid-state image pickup device | |
| JP3233698B2 (en) | Semiconductor device |