JPS61226625A - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JPS61226625A
JPS61226625A JP6649985A JP6649985A JPS61226625A JP S61226625 A JPS61226625 A JP S61226625A JP 6649985 A JP6649985 A JP 6649985A JP 6649985 A JP6649985 A JP 6649985A JP S61226625 A JPS61226625 A JP S61226625A
Authority
JP
Japan
Prior art keywords
strain gauge
water
pressure sensor
plastic housing
lock
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6649985A
Other languages
Japanese (ja)
Other versions
JPH0654271B2 (en
Inventor
Norio Moriyama
森山 則夫
Terumi Nakazawa
照美 仲沢
Shinichi Yamaguchi
真一 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Automotive Systems Engineering Co Ltd
Original Assignee
Hitachi Automotive Engineering Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Automotive Engineering Co Ltd, Hitachi Ltd filed Critical Hitachi Automotive Engineering Co Ltd
Priority to JP6649985A priority Critical patent/JPH0654271B2/en
Publication of JPS61226625A publication Critical patent/JPS61226625A/en
Publication of JPH0654271B2 publication Critical patent/JPH0654271B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE:To improve water resistance without the invasion of water into the sensor by providing the wall for water-proof so as to surround the circumference of the air introducing hole together with the locking part in the projected height direction of the locking part. CONSTITUTION:A wall 19 for water-proof is formed by molding in a single body with a plastic housing 2 at the same height as the locking part 7 so as to surround the circumference of an air introducing hole 4 together with the locking part 7 at the whole circumference of a connector part 5 projected and formed to a plastic housing 2. Consequently, the air introducing hole 4 is opened at one edge surface side by the wall for water-proof, other whole circumference is covered, and therefore, the water pressure is not loaded directly and the invasion of the water in a space 20 from the air introducing hole 4 can be prevented.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、例えば、自動車用エンジンマニホールド圧検
知器として好適な半導体圧力センサの改良に関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to an improvement in a semiconductor pressure sensor suitable as, for example, an engine manifold pressure detector for an automobile.

〔発明の背景〕[Background of the invention]

この種半導体圧力センサに関連し特開昭55−1034
38が知られている。第3図は従来の半導体圧力センサ
の断面図、第4図は第3図のコネクタ部及びロック部の
付近の底面図である。図において、1は半導体歪ゲージ
、2はプラスチックハウジング、3は厚膜回路基板、4
はプラスチックハウジング2に設けられた大気導入穴、
5はコネクタ部、6は歪ゲージl収納部のキャップ、7
は直差しコネクタ部のロック部であシコネクタ部5と共
にプラスチックハウジングと一体成形により突出形成さ
れている。8は歪ゲージ1の収納部をプラスチックハウ
ジング2に固定した接着剤、9はチップ増幅器(CCB
チップ)、10はチップコンデンサ、11は接続用バッ
トでそれぞれはんだ12によシ厚膜回路基板3に接続さ
れ、厚膜回路基板3は接着剤8によシブラスチック/1
ウジング2に固定されている。
Regarding this kind of semiconductor pressure sensor, Japanese Patent Application Laid-Open No. 55-1034
38 are known. FIG. 3 is a sectional view of a conventional semiconductor pressure sensor, and FIG. 4 is a bottom view of the vicinity of the connector portion and lock portion of FIG. 3. In the figure, 1 is a semiconductor strain gauge, 2 is a plastic housing, 3 is a thick film circuit board, and 4
is the atmosphere introduction hole provided in the plastic housing 2,
5 is the connector part, 6 is the cap of the strain gauge l storage part, 7
1 is a locking portion of the direct-insertion connector portion, which is integrally molded with the plastic housing and protrudes together with the connector portion 5. 8 is the adhesive that fixed the storage part of the strain gauge 1 to the plastic housing 2, and 9 is the chip amplifier (CCB).
chip), 10 is a chip capacitor, 11 is a connection bat, and each is connected to the thick film circuit board 3 by solder 12, and the thick film circuit board 3 is connected to the thick film circuit board 3 by adhesive 8.
Fixed to Uzing 2.

13はキャップ6の大気導通穴、14は歪ゲージ1と接
続用パラ)11とを接続するニッケル線、15は厚膜回
路基板3上の接続パッド11、チップコンデンサ10及
びCCBチップ9等の電子部品を覆い保護するために注
入された樹脂である。
13 is an atmospheric conduction hole in the cap 6, 14 is a nickel wire that connects the strain gauge 1 and the connection plate 11, and 15 is an electronic wire such as the connection pad 11 on the thick film circuit board 3, the chip capacitor 10, and the CCB chip 9. A resin injected to cover and protect parts.

16はターミナル端子で、はぼ長円形断面を有して突出
されたコネクタ部5内に一端側を突出され他端側は、プ
ラスチックハウジング2の成形時にプラスチツクハウジ
ング2内部に突出成形され、プラスチックハウジング2
内で厚膜回路基板3rcはんだ付接続されたリードフレ
ーム17と樹脂15上面の空間20でスポット溶接によ
シミ気的に接続されている。18Fi歪ゲージlに対す
る圧力導入管、21は蓋であろう そして、圧力導入管18から圧力P1が印加されると、
圧力PIは歪ゲージlに歪を生じ電流に変化され、即ち
、圧力P1は電気信号に変換され、この電気信号はニッ
ケル線14にて厚膜回路基板3に伝えられCCBテップ
9にて増幅され、その信号はリードフレーム17、ター
ミナル端子16を経て外部へ取り出されコントロールユ
ニット等へ伝達される。そして、ロック部7の凸出部は
相手の凹部(図示せず)に嵌合固着されるようになって
おシ、コネクタ部5にはおすカプラーが挿入されるよう
になっている。
Reference numeral 16 denotes a terminal terminal, which has a roughly oval cross section and has one end protruding into the protruding connector portion 5, and the other end thereof is protruded into the plastic housing 2 when the plastic housing 2 is molded, and the plastic housing 2
Inside, the thick film circuit board 3rc is connected by spot welding to the lead frame 17 connected by soldering and the space 20 above the resin 15 in a spot welding manner. A pressure introduction pipe for the 18Fi strain gauge l, 21 is a lid, and when pressure P1 is applied from the pressure introduction pipe 18,
The pressure PI causes strain in the strain gauge l and is changed into a current, that is, the pressure P1 is converted into an electrical signal, and this electrical signal is transmitted to the thick film circuit board 3 through the nickel wire 14 and amplified by the CCB step 9. The signal is taken out to the outside via the lead frame 17 and the terminal terminal 16 and transmitted to a control unit or the like. The protruding portion of the lock portion 7 is fitted into a mating recess (not shown), and a male coupler is inserted into the connector portion 5.

上記の構造において、ロック部7に大気導入穴4を設け
ておシ、大気導入穴4は、大気圧を基準とする相対圧形
歪ゲージlを採用しているため、絶対不可欠の構造であ
る。そして、コネクタ部5は電気的導通部分が長円形の
コネクタ部5の凸出部分で覆われ防水性を有しているが
、ロック部7に設けた大気導入穴4は防水性を有してい
ないため、走行中等の場合に直接水圧が加えられ水の浸
入がメジ、ターミナル端子16及びリードフレーム17
の接続部が空間20内に露出しておシ、圧力センサ内部
、即ち、厚膜回路基板3に電蝕が発生する欠点がある。
In the above structure, the lock part 7 is provided with an atmosphere introduction hole 4, and the atmosphere introduction hole 4 is an absolutely essential structure because it uses a relative pressure type strain gauge l based on atmospheric pressure. . The electrically conductive portion of the connector portion 5 is covered with the protruding portion of the oval connector portion 5 and is waterproof, but the air introduction hole 4 provided in the lock portion 7 is not waterproof. Therefore, water pressure is directly applied during driving, etc., and water does not enter the terminal terminal 16 and lead frame 17.
There is a drawback that the connecting portion of the pressure sensor is exposed in the space 20, and electrolytic corrosion occurs inside the pressure sensor, that is, the thick film circuit board 3.

尚、大気導入穴に水滴が入フセンサ内部に浸入する欠点
は、耐水試験、J工5DO203,8IX30分を行な
うことで明らかである。
The drawback of water droplets entering the air inlet hole and entering the inside of the sensor becomes clear by conducting a water resistance test for 30 minutes.

〔発明の目的〕[Purpose of the invention]

本発明は上記の状況に鑑みなされたものであシ、センサ
内部に水の浸入することなく耐水性を向上できると共に
取付場所の自由度が高められる半導体圧力センサを提供
することを目的としたものである。
The present invention was made in view of the above situation, and an object of the present invention is to provide a semiconductor pressure sensor that can improve water resistance without water intrusion into the sensor, and can increase the degree of freedom in mounting location. It is.

〔発明の概要〕[Summary of the invention]

本発明の半導体圧力センサは、外部からの圧力を電気信
号に変換する半導体歪ゲージと、該歪ゲージの出力を増
幅するチップ増幅器並びにチップコンデンサを取り付け
上面を樹脂で被覆された混成厚膜回路基板及び上記歪ゲ
ージを内蔵し該樹脂及び上記歪ゲージ上面に空間が形成
され蓋で覆われたプラスチックハウジングと、該プラス
チックハウジングに固着し突設され外部に対し電気的に
接続されるターミナル端子を内蔵する直差しコネクタ部
及びロック部と、該ロック部の内側に設けられ上記空間
と連通し上記歪ゲージの基準圧を形成する大気導入穴と
を設けて表シ、上記ロック部の突出高さ方向に上記大気
導入穴の周囲を該ロック部と共に囲むように防水用壁を
設けたものである。
The semiconductor pressure sensor of the present invention includes a semiconductor strain gauge that converts external pressure into an electrical signal, a chip amplifier that amplifies the output of the strain gauge, and a hybrid thick film circuit board that is equipped with a chip capacitor and whose upper surface is covered with resin. and a plastic housing containing the strain gauge and having a space formed above the resin and the strain gauge and covered with a lid, and a built-in terminal terminal that is fixed to and protrudes from the plastic housing and is electrically connected to the outside. A direct plug connector portion and a lock portion are provided, and an atmosphere introduction hole is provided inside the lock portion and communicates with the space to form a reference pressure of the strain gauge. A waterproof wall is provided to surround the air introduction hole and the lock portion.

〔発明の実施例〕[Embodiments of the invention]

以下本発明の半導体圧力センサを実施例を用い従来と同
部品は同符号で示し同部分の構造の説明は省略し第1図
、第2図によシ説明する。第1図は第3図のコネクタ部
及びロック部と同部分付近の底面図、第2図は第1図の
正面図である。図において、19は防水用壁であり、プ
ラスチックハウジング2に突出形成されたコネクタ部5
の全周にロック部7と共に大気導入穴4の周囲を囲むよ
うに、ロック部7と同じ高さにプラスチックハウジング
2と一体成形によシ形成されている。従って、大気導入
穴4が防水用壁19で1個の端面側は開口されているが
その他の全周は覆われているので、直接水圧がかかるこ
とがなく大気導入穴4がら空間20内への水の浸入を防
止できる。尚、コネクタ部5のほぼ全周に設けられた防
水用壁19はおすカプラーの着脱には全く支障がない。
Hereinafter, the semiconductor pressure sensor of the present invention will be explained using an embodiment, referring to FIGS. 1 and 2, in which the same parts as those in the conventional art are denoted by the same reference numerals, and the explanation of the structure of the same parts will be omitted. 1 is a bottom view of the vicinity of the same parts as the connector section and lock section of FIG. 3, and FIG. 2 is a front view of FIG. 1. In the figure, reference numeral 19 denotes a waterproof wall, and the connector portion 5 is formed protruding from the plastic housing 2.
It is integrally formed with the plastic housing 2 at the same height as the lock part 7 so as to surround the atmosphere introduction hole 4 together with the lock part 7 on the entire circumference. Therefore, one end side of the air inlet hole 4 is opened in the waterproof wall 19, but the other entire circumference is covered, so water pressure is not applied directly and the air inlet hole 4 flows into the space 20. can prevent water from entering. It should be noted that the waterproof wall 19 provided around the entire circumference of the connector portion 5 does not impede attachment and detachment of the male coupler at all.

このように本実施例の半導体圧力センサは、コネクタ部
の全周にロック部と共に大気導入穴の周囲を囲むように
ロック部と同じ高さの防水用壁をプラスチック・・ウジ
ングから一体成形により突出を防ぐことができるので、
厚膜混成回路に電蝕の発生することを防止でき耐環境性
、特に耐水性にすぐれ信頼性を向上できる。1九、耐水
性にすぐれている九め、エンジンルームに装着する場合
も取付場所を狭い範囲内に限定することなく、取付位置
の自由度が向上できる。
In this way, the semiconductor pressure sensor of this embodiment has a waterproof wall that is integrally molded with the lock part and has the same height as the lock part so as to surround the atmosphere inlet hole and protrude from the plastic housing all around the connector part. Because it can prevent
It can prevent electrolytic corrosion from occurring in thick film hybrid circuits, has excellent environmental resistance, especially water resistance, and can improve reliability. 19. Excellent water resistance. 9. Even when installed in the engine room, the installation location is not limited to a narrow range, and the degree of freedom in the installation location can be improved.

尚、上記実施例は、防水用壁19をコネクタ部の長円形
部の外側を囲むように設けた場合について述べたが、上
記長円形部の外側を囲まないでロック部に対向する部分
のコネクタ部を利用し大気導入穴の周りを囲むように防
水用壁を設けても作用効果は同じである。□ 〔発明の効果〕 以上記述した如く本発明の半導体圧力センサは、センサ
内部に水の浸入することなく耐水性を向上できると共に
取付場所の自由度を高めることができる効果を有するも
のである。
In the above embodiment, the case where the waterproof wall 19 is provided so as to surround the outside of the oval part of the connector part has been described. The effect is the same even if a waterproof wall is provided to surround the air inlet hole. □ [Effects of the Invention] As described above, the semiconductor pressure sensor of the present invention has the effect of being able to improve water resistance without water infiltrating inside the sensor, and increasing the degree of freedom in mounting location.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の半導体圧力センサの実施例であって第
3図のコネクタ部及びロック部と同部分付近の底面図、
第2図は第1図の正面図、第3図は従来の半導体圧力セ
ンサの断面図、第4図は第3図のコネクタ部及びロック
部付近の底面図である。
FIG. 1 shows an embodiment of the semiconductor pressure sensor of the present invention, and is a bottom view of the vicinity of the same parts as the connector section and lock section of FIG. 3;
2 is a front view of FIG. 1, FIG. 3 is a sectional view of a conventional semiconductor pressure sensor, and FIG. 4 is a bottom view of the vicinity of the connector portion and lock portion of FIG. 3.

Claims (2)

【特許請求の範囲】[Claims] 1.外部からの圧力を電気信号に変換する半導体歪ゲー
ジと、該歪ゲージの出力を増幅するチップ増幅器並びに
チップコンデンサを取り付け上面を樹脂で被覆された混
成厚膜回路基板及び上記歪ゲージを内蔵し該樹脂及び上
記歪ゲージ上面に空間が形成され蓋で覆われたプラスチ
ックハウジングと、該プラスチックハウジングに固着し
突設され外部に対し電気的に接続されるターミナル端子
を内蔵する直差しコネクタ部及びロック部と、該ロック
部の内側に設けられ上記空間と連通し上記歪ゲージの基
準圧を形成する大気導入穴とを設けたものにおいて、上
記ロック部の突出高さ方向に上記大気導入穴の周囲を該
ロック部と共に囲むように防水用壁を設けたことを特徴
とする半導体圧力センサ。
1. A semiconductor strain gauge that converts external pressure into an electrical signal, a chip amplifier that amplifies the output of the strain gauge, and a hybrid thick film circuit board whose top surface is coated with resin and has a chip capacitor attached thereto, and a built-in strain gauge. A plastic housing with a space formed on the upper surface of the strain gauge and covered with a lid, a direct plug connector part and a lock part that have built-in terminal terminals that are fixed to and protrude from the plastic housing and are electrically connected to the outside. and an atmosphere inlet hole provided inside the lock part and communicating with the space to form the reference pressure of the strain gauge, wherein the periphery of the atmosphere inlet hole is provided in the direction of the protruding height of the lock part. A semiconductor pressure sensor characterized in that a waterproof wall is provided to surround the lock portion.
2.上記防水用壁が、上記ロック部の高さに該ロック部
と共に上記コネクタ部の外周を包囲するように形成され
ている特許請求の範囲第1項記載の半導体圧力センサ。
2. 2. The semiconductor pressure sensor according to claim 1, wherein the waterproof wall is formed at a height of the lock portion so as to surround the outer periphery of the connector portion together with the lock portion.
JP6649985A 1985-04-01 1985-04-01 Semiconductor pressure sensor Expired - Lifetime JPH0654271B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6649985A JPH0654271B2 (en) 1985-04-01 1985-04-01 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6649985A JPH0654271B2 (en) 1985-04-01 1985-04-01 Semiconductor pressure sensor

Publications (2)

Publication Number Publication Date
JPS61226625A true JPS61226625A (en) 1986-10-08
JPH0654271B2 JPH0654271B2 (en) 1994-07-20

Family

ID=13317569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6649985A Expired - Lifetime JPH0654271B2 (en) 1985-04-01 1985-04-01 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPH0654271B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0238831A (en) * 1988-07-28 1990-02-08 Nec Corp Stem for semiconductor
US6532650B1 (en) * 1999-06-24 2003-03-18 Remy Kirchdoerffer Process of making an encapsulated electronic device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0238831A (en) * 1988-07-28 1990-02-08 Nec Corp Stem for semiconductor
US6532650B1 (en) * 1999-06-24 2003-03-18 Remy Kirchdoerffer Process of making an encapsulated electronic device

Also Published As

Publication number Publication date
JPH0654271B2 (en) 1994-07-20

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