JPS6121992A - Device for preparation single crystal heated with convergent infrared ray - Google Patents
Device for preparation single crystal heated with convergent infrared rayInfo
- Publication number
- JPS6121992A JPS6121992A JP14169684A JP14169684A JPS6121992A JP S6121992 A JPS6121992 A JP S6121992A JP 14169684 A JP14169684 A JP 14169684A JP 14169684 A JP14169684 A JP 14169684A JP S6121992 A JPS6121992 A JP S6121992A
- Authority
- JP
- Japan
- Prior art keywords
- lamp
- crystal
- state
- single crystal
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は赤外線集光加熱単結晶製造装置(以下yz波装
置略記)に関し、特に結晶育成を自動制御する?2装置
の改良に関するものである。[Detailed Description of the Invention] [Technical Field] The present invention relates to an infrared condensed heating single crystal production device (hereinafter abbreviated as a YZ wave device), and particularly to an apparatus for automatically controlling crystal growth. This paper relates to improvements to two devices.
従来、yz装置において、自動制御は殆んど行なわれて
おらず、ラインセンサあるいはエリセンサ等の光学セン
サを用いた製造方法が提唱されているのみである。Conventionally, automatic control has hardly been performed in YZ devices, and only manufacturing methods using optical sensors such as line sensors or ELI sensors have been proposed.
この場合育成結晶からの元信号と、背景の迷光とを分離
する為、回転楕円面鏡の一部を無反射状態とすることが
必要条件とされている。In this case, in order to separate the original signal from the grown crystal from background stray light, it is a necessary condition that a part of the spheroidal mirror be in a non-reflecting state.
但しこの場合、ランプの焦点が明確に定まらずパワーの
ロス、ランプ寿命の問題となる。However, in this case, the focus of the lamp is not clearly determined, resulting in problems of power loss and lamp life.
本発明は以上の問題点を解決するもので、その目的とす
るところは、長時間(10時間以上)安定して結晶育成
を行なうと同時に、ランプの焦点合せを容易に行ない、
パワーロスの防止、及びランプの長寿命化をはかること
にある。The present invention is intended to solve the above problems, and its purpose is to stably grow crystals for a long time (10 hours or more), and at the same time, to easily focus the lamp.
The purpose is to prevent power loss and extend the life of the lamp.
本発明の′1!z装置は、ラインセンサあるいは工リア
センサ等の光学センサを用いて、溶融帯の直径、高さ、
外形形状等を測定し、これをランブノくワー、あるいは
溶融帯の高さたフィードバックするものである。'1 of the present invention! The z device uses optical sensors such as line sensors or factory sensors to measure the diameter, height, and temperature of the melted zone.
It measures the external shape, etc., and feeds this back to the lamp head or the height of the molten zone.
第1図に従来の?2装置の概要を示す。Figure 1 shows the conventional? An overview of the two devices is shown below.
ここで1は回転楕円面鏡、2はノ・ロゲンランフ、5は
石英管、4はガス導入口、5はガス排出口、6は原料棒
、7は種結晶、8は溶融帯、9は上部シャフト、10は
下部シャフト、11はレンズ(含プリズム、フィルター
)、12はスクリーンである。Here, 1 is a spheroidal mirror, 2 is a logen lamp, 5 is a quartz tube, 4 is a gas inlet, 5 is a gas outlet, 6 is a raw material rod, 7 is a seed crystal, 8 is a molten zone, and 9 is an upper part 10 is a lower shaft, 11 is a lens (including a prism and a filter), and 12 is a screen.
上部シャフト9に、原料棒6をセットし、下部シャフト
10に種結晶7をセットする。The raw material rod 6 is set on the upper shaft 9, and the seed crystal 7 is set on the lower shaft 10.
ハロゲンランプ2のパワーを上げ、回転楕円面鏡1によ
り該ハロゲンランプの光を、石英管3の中央部に集光す
る。この時ガス導入口4から雰囲気ガスを導入し、ガス
排出口5から雰囲気ガスを排出する。The power of the halogen lamp 2 is increased, and the spheroidal mirror 1 focuses the light from the halogen lamp onto the center of the quartz tube 3. At this time, atmospheric gas is introduced from the gas inlet 4 and exhausted from the gas exhaust port 5.
集光部において、原料棒6の先端と、種結晶7の先端と
を溶融接触させて、溶融帯8を形成する。この時王部シ
ャフト9及び下部シャフト10は、同方向ないしは逆方
向に回転させ、上下のシャフトが同時に下方へ移動する
ことにより、結晶が育成され、レンズ11を経てスクリ
ーン12上へ写し出された画像を観察しながら、ランプ
パワーの制御及びギャップ調整を行なう。In the light condensing section, the tip of the raw material rod 6 and the tip of the seed crystal 7 are brought into molten contact to form a molten zone 8. At this time, the king shaft 9 and the lower shaft 10 are rotated in the same direction or in opposite directions, and the upper and lower shafts move downward at the same time, so that crystals are grown and an image is projected onto the screen 12 through the lens 11. Control the lamp power and adjust the gap while observing the
第2図に本発明の自動制御システムのブロック図を示す
。FIG. 2 shows a block diagram of the automatic control system of the present invention.
ここで21は光学系、22はセンサ部、23はAD変換
器、24はコントローラ部、25は表示部、26はキー
人力部、27はプリンタ一部、28はギャップ調整部、
29はDA変換器、30はランプパワーコントロール部
である。Here, 21 is an optical system, 22 is a sensor section, 23 is an AD converter, 24 is a controller section, 25 is a display section, 26 is a key manual section, 27 is a printer part, 28 is a gap adjustment section,
29 is a DA converter, and 30 is a lamp power control section.
溶融帯の像は光学系21を経て、センサ部22に到達し
、AD変換器23を経てコントローラ部24で演算処理
される。処理された信号は、DA変換器29を経て、ラ
ンプパワ−コントロール部30でランプパワーを調節し
、溶融帯の温度を制御する。あるいはギャップ調整部2
8で融液の高さを調節する。The image of the melted zone passes through the optical system 21, reaches the sensor section 22, passes through the AD converter 23, and is processed by the controller section 24. The processed signal passes through a DA converter 29, and a lamp power control section 30 adjusts the lamp power to control the temperature of the melting zone. Or gap adjustment part 2
Adjust the height of the melt in step 8.
さを調節する。Adjust the brightness.
一部キー人力部26は、各種定数を千°めインプットし
、その後も必要に応じて随時変更を行なう。表示部25
はその時のランプパワー、測定径等の表示を行ない、プ
リンタ一部27は所定の時間毎にランプパワー、測定径
、溶融帯の高さ等をプリントアウトする。The partial key human power section 26 inputs various constants every 1,000 degrees, and thereafter makes changes as needed. Display section 25
displays the lamp power, measured diameter, etc. at that time, and the printer part 27 prints out the lamp power, measured diameter, height of the molten zone, etc. at predetermined intervals.
結晶育成を自動制御する場合、回転楕円面鏡の一部を無
反射状態とすることが必要条件である。When automatically controlling crystal growth, it is a necessary condition that a part of the spheroidal mirror be in a non-reflecting state.
即ち、第5図にスクリーン上の映像の例を示すが、従来
のTZ装置では、原料棒31.育成結晶32 、溶融1
fis 3の他に、ランプのフィラメント像34が観察
され、溶融帯の信号が十分に得られない。そこで、ラン
プの、フィラメント像を消去する為、第4図に示す如く
、回転楕円面鏡41の内部で、石英管44を中心にして
、レンズ45とほぼ対称の位置に、反射防止板43を設
けている。That is, as shown in FIG. 5, which shows an example of an image on the screen, in the conventional TZ apparatus, the raw material rod 31. Growing crystal 32, melting 1
fis 3, a filament image 34 of the lamp is observed, and the signal of the melting zone is not sufficiently obtained. Therefore, in order to eliminate the filament image of the lamp, an anti-reflection plate 43 is placed inside the spheroidal mirror 41 at a position approximately symmetrical to the lens 45 with the quartz tube 44 in the center. It is set up.
この反射防止板43により、ハロゲンランプ42の像牽
消去し、溶融帯の信号レベルを得ている。This anti-reflection plate 43 eliminates the image of the halogen lamp 42 and obtains the signal level of the molten zone.
しかし、ハロゲンランプの焦点を谷わせることは、省エ
ネルギーあるいはランプの寿命の点からも重要な条件で
あり、その改善策が望まれている〔実施例〕
以下、本発明について、実施例に基づき詳細に説明する
。However, making the focal point of a halogen lamp valley is an important condition from the point of view of energy saving and lamp life, and improvement measures are desired. Explain in detail.
〔実施例−1〕
反射状態は従来のFZ装置のまま、回転楕円面鏡(金メ
ツキ面)を使用し、その上に反射防止板を設ける方式。[Example 1] The reflection state is the same as the conventional FZ device, but a spheroidal mirror (gold-plated surface) is used, and an anti-reflection plate is provided on top of it.
第5図に回転円面鏡の平面図を示す。FIG. 5 shows a plan view of the rotating circular mirror.
ここで51は回転楕円面鏡、52は下地基板、53は反
射防止板である。Here, 51 is a spheroidal mirror, 52 is a base substrate, and 53 is an antireflection plate.
反射防止板としては、できる限り反射率が低く、しかも
黒色の素材が要求され、例えば、反射防止板を鉄系の材
料で作製し、黒染め、あるいは艷消しの黒色琺瑯仕上げ
を施す方法。The anti-reflection plate needs to be made of a black material with as low reflectance as possible. For example, the anti-reflection plate is made of iron-based material and given a black dyed or black enamel finish.
又、反射防止板を金属材料で作製し、その表面に黒色の
セラミックを溶射するζあるいはセラミックの表面にカ
ーボンペーストを焼き付けた基板を挿入する方法。Another method is to make an anti-reflection plate from a metal material and thermally spray black ceramic onto its surface, or insert a substrate with carbon paste baked onto the ceramic surface.
反射防止板を直接、黒色のセラミック、グラファイトで
作製する方法等が挙げられる。Examples include a method in which the antireflection plate is directly made of black ceramic or graphite.
これらは、いずれも回転楕円面鏡にネジ穴を設け、下地
基板及び反射防止板をネジ止めする。In both of these, screw holes are provided in the spheroidal mirror, and the base substrate and antireflection plate are screwed together.
〔実施例−2〕
反射状態、無反射状態とも基板を作製し、回転楕円面鏡
の後部にいずれかをセットする方式。[Example 2] A method in which substrates are prepared in both a reflective state and a non-reflective state, and either one is set at the rear of a spheroidal mirror.
第6図に回転楕円面鏡の正面図を示す。FIG. 6 shows a front view of the spheroidal mirror.
ことで61は回転楕円面鏡、62は基板である。Thus, 61 is a spheroidal mirror, and 62 is a substrate.
基板62は予め設けられた溝に横から挿入する方法であ
る。The substrate 62 is inserted from the side into a pre-provided groove.
反射状態の基板は回転楕円面鏡と同材質、同等の表面仕
上げとし、無反射状態は実施例1と同様の素材を使用す
る。The substrate in the reflective state is made of the same material and has the same surface finish as the spheroidal mirror, and the same material as in Example 1 is used in the non-reflective state.
以上述べたように1本発明によれば、回転楕円面鏡の表
面を容易に反射、及び無反射状態とするわとが可能であ
り、無反射状態で長時間安定した結晶育成が可能である
。As described above, according to the present invention, it is possible to easily make the surface of the spheroidal mirror reflective and non-reflective, and stable crystal growth for a long time in the non-reflective state is possible. .
しかも反射状態が簡便に得られる為、ランプ交換時の焦
点合せが容易となり、ランプの長寿命化及びパワーのロ
ス防止に大きな効果を有する。Furthermore, since the reflective state can be easily obtained, focusing is facilitated when replacing the lamp, which has a great effect on extending the life of the lamp and preventing power loss.
従って、ルビー、サファイア、アレキサンドライト等の
宝石用単結晶は勿論、Y工G 、 YAG 。Therefore, not only single crystals for gemstones such as ruby, sapphire, and alexandrite, but also YAG, YAG, etc.
GGG等の工業用単結晶の育成にも大きく貢献する効果
を有する。It also has the effect of greatly contributing to the growth of industrial single crystals such as GGG.
第1図は従来のFZ装置のa要を示す。
第2図は本発明の自動制御システムのブロック図を示す
。
第5図はスクリーン上の映像の例を示す図。
第4図は回転楕円面鏡の平面図を示す。
第5図は本発明の実施例を示す回転楕円面鏡の平面図を
示す。
第6図は本発明の実施例を示す回転楕円面鏡の正面図を
示す。
第1図
m−」
第2図
第3図
鵡
第4図FIG. 1 shows the main features of a conventional FZ device. FIG. 2 shows a block diagram of the automatic control system of the present invention. FIG. 5 is a diagram showing an example of an image on the screen. FIG. 4 shows a plan view of the spheroidal mirror. FIG. 5 shows a plan view of a spheroidal mirror showing an embodiment of the present invention. FIG. 6 shows a front view of a spheroidal mirror showing an embodiment of the present invention. Figure 1 m-'' Figure 2 Figure 3 Parrot Figure 4
Claims (1)
鏡、又はレンズを用いて集光し、該集光部において、原
料棒と種結晶とを、溶融帯を仲介として結合して、フロ
ーティングゾーンを形成し、該フローティングゾーンを
、一定速度で移動することにより、前記種結晶上に結晶
を析出させる赤外線集光加熱単結晶製造装置において、
回転楕円面鏡の一部を、反射状態と無反射状態に変更可
能とすることを特徴とする赤外線集光加熱単結晶製造装
置。Light emitted from a high-temperature light source such as a halogen lamp is focused using a reflecting mirror or lens, and in the focusing section, the raw material rod and the seed crystal are combined via the molten zone to create a floating zone. In an infrared condensed heating single crystal manufacturing apparatus that deposits crystals on the seed crystal by forming a floating zone and moving the floating zone at a constant speed,
An infrared condensed heating single crystal production device characterized in that a part of a spheroidal mirror can be changed between a reflective state and a non-reflective state.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14169684A JPH0247434B2 (en) | 1984-07-09 | 1984-07-09 | SEKIGAISENSHUKOKANETSUTANKETSUSHOSEIZOSOCHI |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14169684A JPH0247434B2 (en) | 1984-07-09 | 1984-07-09 | SEKIGAISENSHUKOKANETSUTANKETSUSHOSEIZOSOCHI |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6121992A true JPS6121992A (en) | 1986-01-30 |
JPH0247434B2 JPH0247434B2 (en) | 1990-10-19 |
Family
ID=15298080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14169684A Expired - Lifetime JPH0247434B2 (en) | 1984-07-09 | 1984-07-09 | SEKIGAISENSHUKOKANETSUTANKETSUSHOSEIZOSOCHI |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0247434B2 (en) |
-
1984
- 1984-07-09 JP JP14169684A patent/JPH0247434B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0247434B2 (en) | 1990-10-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |