JPS60221386A - Manufacturing apparatus of single crystal by infrared-condensing heating - Google Patents

Manufacturing apparatus of single crystal by infrared-condensing heating

Info

Publication number
JPS60221386A
JPS60221386A JP7399184A JP7399184A JPS60221386A JP S60221386 A JPS60221386 A JP S60221386A JP 7399184 A JP7399184 A JP 7399184A JP 7399184 A JP7399184 A JP 7399184A JP S60221386 A JPS60221386 A JP S60221386A
Authority
JP
Japan
Prior art keywords
melt zone
optical system
crystal
diaphragm
prism
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7399184A
Other languages
Japanese (ja)
Other versions
JPH0251876B2 (en
Inventor
Kuniharu Yamada
邦晴 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP7399184A priority Critical patent/JPS60221386A/en
Publication of JPS60221386A publication Critical patent/JPS60221386A/en
Publication of JPH0251876B2 publication Critical patent/JPH0251876B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • C30B13/22Heating of the molten zone by irradiation or electric discharge
    • C30B13/24Heating of the molten zone by irradiation or electric discharge using electromagnetic waves

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To grow automatically and stably a crystal for many hours by providing a filter and a diaphragm to an optical system in the titled apparatus for automatically controlling by the observation of an image of the melt zone from the port of a spheroidal mirror. CONSTITUTION:The image of a melt zone is focused on an optical sensor from the port provided at a part of a spheroidal mirror through an optical system consisting of a lens, a prism, a half mirror, a reflector, etc., and the diameter or the external shape of the melt zone is fed back to the lamp power or the height of the melt zone to control automatically in the titled apparatus. In the apparatus, the optical system is constituted of a melt zone 41, a filter 42, a lens 43 (including a prism), a diaphragm 44, an optical sensor 45, and a front panel 46. When the luminance of the melt zone is changed because the required power is varied in accordance with the kind of materials of the crystal, the change can be coped with by the exchange of filters and the opening degree of the diaphragm. Consequently, the crystal can be stably grown for many hours (>=10hr).

Description

【発明の詳細な説明】 〔技術分野〕 本発明は、Fz装置(赤外線集中加熱単結晶製造装置に
関し、特に結晶育成を自動的に行なうF2装置に関する
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an Fz apparatus (infrared concentrated heating single crystal manufacturing apparatus), and particularly to an F2 apparatus that automatically grows crystals.

〔従来技術〕[Prior art]

従来、Fz装置での結晶合成に自動制御は行なわれてお
らず、回転楕円面鏡の一箇所に設けられた孔からの、画
像をスクリーン上で観察するのみであった。
Conventionally, crystal synthesis in an Fz apparatus has not been automatically controlled, and only images from a hole provided at one location of a spheroidal mirror are observed on a screen.

従って、結晶育成を行なうためには、常時画像を監視し
、ランプパワーあるいはギャップ調整を手動で行なわな
ければならなかった。
Therefore, in order to grow crystals, it was necessary to constantly monitor images and manually adjust the lamp power or gap.

〔目的〕〔the purpose〕

本発明は以上の問題点を解決するもので、その目的とす
るところは、長時間(10時間以上)安定して、結晶育
成を行なうFZ装置を提供することにある。
The present invention is intended to solve the above problems, and its purpose is to provide an FZ apparatus that can stably grow crystals for a long time (10 hours or more).

〔概要〕〔overview〕

本発明のFZ装置は、レンズ、プリズム、ハーフミラ−
1反射鏡等の光学系の中間に、フィルター及び絞りを設
け、回転楕円面鏡の一部に設けた孔から、溶融帯の像を
該光学系を経て、光学センサ上に結像させ、該光学セン
サからの信号を処理して結晶の自動育成を行なうもので
、光学センサにおける信号のSN比が高く、制御精度の
高いことを特徴とする。
The FZ device of the present invention includes lenses, prisms, and half mirrors.
1. A filter and a diaphragm are provided in the middle of an optical system such as a reflecting mirror, and an image of the molten zone is formed on an optical sensor through the optical system through a hole provided in a part of the spheroidal mirror. This system automatically grows crystals by processing signals from an optical sensor, and is characterized by a high signal-to-noise ratio of the signal from the optical sensor and high control accuracy.

第1図に従前の?Z波装置概要を示す。Figure 1 is the old one? An overview of the Z-wave device is shown.

ここで、1は回転楕円面鏡、2はハロゲンランプ#8は
石英管、4はガス導入口、5はガス排出口、6は原料棒
、7は種結晶、8は溶融帯、9は上部シャフト、10は
下部シャフト、11はレンズ(含プリズム)、12はス
クリーンである。
Here, 1 is a spheroidal mirror, 2 is a halogen lamp #8 is a quartz tube, 4 is a gas inlet, 5 is a gas outlet, 6 is a raw material rod, 7 is a seed crystal, 8 is a molten zone, and 9 is an upper part 10 is a lower shaft, 11 is a lens (including a prism), and 12 is a screen.

上部シャフト9に原料棒6をセットし、下部シャフト1
0に種結晶7をセットする。 。
The raw material rod 6 is set on the upper shaft 9, and the lower shaft 1
Set seed crystal 7 to 0. .

ハロゲンランプ2のパワーを投入し、回転楕円面鏡1に
より該ハロゲンランプの光を石英管3の中央部に集光す
る。
The power of the halogen lamp 2 is turned on, and the spheroidal mirror 1 focuses the light from the halogen lamp onto the center of the quartz tube 3.

この時、ガス導入口4から雰囲気ガスを導入し、ガス排
出口5から雰囲気ガスを排出する。
At this time, atmospheric gas is introduced through the gas inlet 4 and exhausted through the gas exhaust port 5.

集光部において、原料棒6の先端と種結晶7の先端とを
溶融接触させて、溶融帯8を形成する。
In the light condensing section, the tip of the raw material rod 6 and the tip of the seed crystal 7 are brought into molten contact to form a molten zone 8.

この時、上部シャフト9及び下部シャフト10は、同方
向なりしは逆方向に回転させ、上下のシャフトが同時に
下方へ移動する。
At this time, the upper shaft 9 and the lower shaft 10 are rotated in the same direction or in opposite directions, and the upper and lower shafts simultaneously move downward.

該集光部の状況をレンズ11(含プリズム)及び反射鏡
を経て、スクリーン12上に投映し、常時、該投映像を
監視しつつ、ランプバフ−あるいは原料棒と種結晶の間
隔(ギャップ)を調節しながら、結晶育成を行なう。
The state of the light condensing section is projected onto the screen 12 via the lens 11 (including the prism) and the reflecting mirror, and the distance (gap) between the lamp buff or raw material rod and the seed crystal is adjusted while constantly monitoring the projected image. Crystal growth is performed while making adjustments.

第2図に従前のFZ装置の光学系の概要を示す。FIG. 2 shows an overview of the optical system of the previous FZ device.

ここで(、z)は平面図、(b)は側面図である。Here, (, z) is a plan view, and (b) is a side view.

21は溶融帯、22はレンズ(含プリズム)、28は反
射鏡、24はスクリーン、25はフロントパネルである
21 is a melting zone, 22 is a lens (including a prism), 28 is a reflecting mirror, 24 is a screen, and 25 is a front panel.

第8図に本発明のFZ装置で使用する自動制御システム
のブロック図を示す。
FIG. 8 shows a block diagram of an automatic control system used in the FZ device of the present invention.

ここで31は光学系、32はセンサ部、38はコントロ
ーラ部、84はキー人力部、85はDA変換器、36は
AD変換器、37は表示部、88はプリンタ一部、39
はランプパワーコントロール部、40はギャップ調整部
である。
Here, 31 is an optical system, 32 is a sensor section, 38 is a controller section, 84 is a key power section, 85 is a DA converter, 36 is an AD converter, 37 is a display section, 88 is a printer part, 39
4 is a lamp power control section, and 40 is a gap adjustment section.

溶融帯の像は、光学系31を経て、センサ部32に到達
し、コントロール部89でランプパワーを調節し、溶融
帯の温度を制御するか、又はギャップ調整部40で融液
の高さを調節する。
The image of the melted zone passes through the optical system 31 and reaches the sensor section 32, where the control section 89 adjusts the lamp power to control the temperature of the melted zone, or the gap adjustment section 40 adjusts the height of the melt. Adjust.

ランプパワー、あるいはギャップは、AD変換器36を
経て、コントローラ部88に再度フィードバックされる
The lamp power or gap is fed back to the controller section 88 via the AD converter 36.

一方キー人力部84では、初期の各種定数をインフット
し、表示部87は、その時のランプパワー等を表示する
。更にプリンタ一部88では、所定の時間毎に、ランプ
パワー、溶融帯径、溶融帯の高さ等をプリントアウトす
る。
On the other hand, the key input section 84 inputs various initial constants, and the display section 87 displays the lamp power and the like at that time. Furthermore, the printer part 88 prints out the lamp power, melting zone diameter, melting zone height, etc. at predetermined intervals.

自動制御を行なう場合に、光学センサにおける信号のS
N比は、その後の演算処理に極めて大きな影響を与え、
SN比の高すことが必須条件となる。
When performing automatic control, the S of the signal at the optical sensor
The N ratio has an extremely large influence on subsequent calculation processing,
A high signal-to-noise ratio is an essential condition.

〔実施例〕〔Example〕

以下、本発明について、実施例に基づき詳細に説明する
Hereinafter, the present invention will be described in detail based on examples.

第4図及び第5図に本発明装置の光学系の平面図を示す
FIGS. 4 and 5 show plan views of the optical system of the apparatus of the present invention.

ここで41及び51は溶融帯、42及び52はフィルタ
ー、43及び58はレンズ(含プリズム)、44及び5
4は絞シ、45及び55は光学セy+、46及び56は
フロントパネル、5’lt、ノーーフミラー、58は反
射鏡、59はスクリーンである。
Here, 41 and 51 are melting zones, 42 and 52 are filters, 43 and 58 are lenses (including prisms), and 44 and 5
4 is an aperture, 45 and 55 are optical sensors, 46 and 56 are front panels, 5'lt is a nauf mirror, 58 is a reflector, and 59 is a screen.

1 第6図に光学センサとしてラインセンサを使用し、
演算処理を行なった時のオシロスコープによる信号波形
を示す。
1 In Figure 6, a line sensor is used as an optical sensor,
This shows the signal waveform measured by an oscilloscope when performing arithmetic processing.

ここで61はセンサの光量レベルの直接値であシ、62
はこれを二値化した値である。
Here, 61 is the direct value of the light level of the sensor, and 62
is the value obtained by binarizing this.

(α)は絞りを絞フすぎた場合、(b)は適正値、(C
)は絞りを開けすぎた場合である。
(α) is the correct value when the aperture is set too far, (b) is the appropriate value, and (C
) is the case when the aperture is opened too much.

(α)の絞りを絞りすぎた場合、二値化信号がXの如く
途中で切れる為、誤った径の判定をしてしまい、逆に(
C)の絞りを開けすぎた場合、光量の直接値がYの如く
端で上昇する為、径の両端の判定が不正確になってしま
う。
If the aperture (α) is narrowed down too much, the binarized signal will be cut off in the middle as shown in
If the aperture in C) is opened too much, the direct value of the amount of light increases at the ends like Y, making the determination of both ends of the diameter inaccurate.

結晶の材質によって、所要パワーが異なる為、溶融帯の
輝度が変化するが、本発明では、フィルターの交換と、
絞ルの開閉状況により、これに対応できる。
Since the required power differs depending on the crystal material, the brightness of the molten zone changes, but in the present invention, it is possible to replace the filter and
This can be handled by changing the opening/closing status of the throttle.

〔効果〕〔effect〕

以上述べたように、本発明によれば、結晶の材質が変化
しても、適正な信号レベルが得られ、長時間安定して結
晶を育成することが可能である。
As described above, according to the present invention, even if the material of the crystal changes, an appropriate signal level can be obtained and the crystal can be grown stably for a long time.

従って、ルビー、サファイア、アレキサ/ドライド等の
宝石用単結晶は勿論、Y工G 、 YAG 、 GGG
等の工業用単結晶にも使用可能であり、色ムラ、気泡、
欠陥等の無い、高品質な単結晶を育成できる。
Therefore, not only single crystals for gemstones such as ruby, sapphire, alexa/dried, etc., but also YAG, YAG, GGG, etc.
It can also be used for industrial single crystals such as
High-quality single crystals without defects can be grown.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従前のFZ装置の概要を示す。 第2図は従前のFZ装置の光学系の概要を示す。 第3図は本発明のFZ装置で使用する自動制御システム
のブロック図を示す。 第4図は本発明のFZ装置の光学系の概要を示す。 第5図は本発明のFZ装置の他の光学系の概要を示す。 第6図は本発明のFZ装置においてラインセンサを使用
したときの、信号波形を示す。 第1図 (久)(1)ノ 第2図 第3図 α−9′ = Q”−”” ” 第5図
FIG. 1 shows an outline of a conventional FZ device. FIG. 2 shows an outline of the optical system of a conventional FZ device. FIG. 3 shows a block diagram of an automatic control system used in the FZ device of the present invention. FIG. 4 shows an outline of the optical system of the FZ device of the present invention. FIG. 5 shows an outline of another optical system of the FZ device of the present invention. FIG. 6 shows signal waveforms when a line sensor is used in the FZ device of the present invention. Figure 1 (Kyu) (1) Figure 2 Figure 3 α-9' = Q”-”” ” Figure 5

Claims (1)

【特許請求の範囲】[Claims] 回転楕円面鏡の一部に設けた孔から、レンズ、プリズム
、ハーフミラ−1反射鏡等の光学系を経て、光学センサ
に溶融帯の像を結像し、溶融帯の直径、又は外形形状を
、ランプパワーあるいは、溶融帯の高さにフィードバッ
クして自動制御を行なう赤外線集光加熱単結晶製造装置
において、該光学系に、フィルター及び絞りを設けるこ
とを特徴とする赤外線集光加熱単結晶製造装置。
An image of the molten zone is formed on an optical sensor through a hole provided in a part of the spheroidal mirror, through an optical system such as a lens, prism, and half mirror 1 reflector, and the diameter or external shape of the molten zone is measured. , an infrared condensed heating single crystal manufacturing apparatus that performs automatic control by feeding back the lamp power or the height of the melting zone, characterized in that the optical system is provided with a filter and an aperture. Device.
JP7399184A 1984-04-13 1984-04-13 Manufacturing apparatus of single crystal by infrared-condensing heating Granted JPS60221386A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7399184A JPS60221386A (en) 1984-04-13 1984-04-13 Manufacturing apparatus of single crystal by infrared-condensing heating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7399184A JPS60221386A (en) 1984-04-13 1984-04-13 Manufacturing apparatus of single crystal by infrared-condensing heating

Publications (2)

Publication Number Publication Date
JPS60221386A true JPS60221386A (en) 1985-11-06
JPH0251876B2 JPH0251876B2 (en) 1990-11-08

Family

ID=13534087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7399184A Granted JPS60221386A (en) 1984-04-13 1984-04-13 Manufacturing apparatus of single crystal by infrared-condensing heating

Country Status (1)

Country Link
JP (1) JPS60221386A (en)

Also Published As

Publication number Publication date
JPH0251876B2 (en) 1990-11-08

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