JPS61214564A - Contact-type image sensor substrate - Google Patents
Contact-type image sensor substrateInfo
- Publication number
- JPS61214564A JPS61214564A JP60056408A JP5640885A JPS61214564A JP S61214564 A JPS61214564 A JP S61214564A JP 60056408 A JP60056408 A JP 60056408A JP 5640885 A JP5640885 A JP 5640885A JP S61214564 A JPS61214564 A JP S61214564A
- Authority
- JP
- Japan
- Prior art keywords
- light
- film
- resin
- image sensor
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 24
- 239000011347 resin Substances 0.000 claims abstract description 35
- 229920005989 resin Polymers 0.000 claims abstract description 35
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 11
- 238000002834 transmittance Methods 0.000 claims abstract description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000004925 Acrylic resin Substances 0.000 claims description 4
- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000009719 polyimide resin Substances 0.000 claims description 3
- 229920002050 silicone resin Polymers 0.000 claims description 3
- 229920002614 Polyether block amide Polymers 0.000 claims description 2
- 229920006122 polyamide resin Polymers 0.000 claims description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims 1
- 239000000969 carrier Substances 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 239000011521 glass Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- IDCBOTIENDVCBQ-UHFFFAOYSA-N TEPP Chemical compound CCOP(=O)(OCC)OP(=O)(OCC)OCC IDCBOTIENDVCBQ-UHFFFAOYSA-N 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229920001342 Bakelite® Polymers 0.000 description 1
- 235000006693 Cassia laevigata Nutrition 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 241000522641 Senna Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229940124513 senna glycoside Drugs 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は密着形イメージセンサ基板の改良に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement of a contact type image sensor substrate.
第２図は、例えば日経エレクトロニクス１９８２年４月
２６日号に掲載された従来の密着形イメージセンサ基板
を示す断面図であり、図において、（１）はセラミック
またはガラスから成る絶縁性基板、（２）は絶縁性基板
（１）上に形成されたクロムなどの材料から成る個別電
極、（３）はアモルファスシリコン、（４）はＩＴＯ（
インジウム・スズ・酸化物）などの透光性導電膜から成
る共通電極、Ｌは被写体原稿からの反射光である。FIG. 2 is a cross-sectional view showing a conventional contact image sensor substrate published in the April 26, 1982 issue of Nikkei Electronics, for example. In the figure, (1) is an insulating substrate made of ceramic or glass; 2) is an individual electrode made of a material such as chromium formed on an insulating substrate (1), (3) is amorphous silicon, and (4) is ITO (
The common electrode is made of a transparent conductive film such as indium, tin, oxide), and L is the reflected light from the subject document.
次いで動作について説明する。アモルファスシリコン（
３）のうち、共通電極（４）を透過した原稿からの反射
光りが照射された部分の電気抵抗が急減する。従ってそ
の部分の個別電極（２）と共通電極（４）との間に流れ
る電流が急変し、光が検出される０〔発明が解決しよう
とする問題点〕
従来の密着形イメージセンサ基板は以上のように構成さ
れておシ、透光性導電膜からなる共通電極が光検出部の
保護作用を兼ねていた。共通電極は厚さが通常１０００
〜２０００人と非常に薄いので、保護膜として不十分で
あシ、また共通電極自身が腐食を受けるなど、センサ特
性が外部環境の影響を受けやすく、信頼性に乏しいなど
の問題点があった。Next, the operation will be explained. Amorphous silicon (
Among 3), the electrical resistance of the portion irradiated with the reflected light from the original that has passed through the common electrode (4) decreases rapidly. Therefore, the current flowing between the individual electrode (2) and the common electrode (4) in that part suddenly changes, and light is detected.[Problem to be solved by the invention] The conventional contact image sensor substrate is The common electrode made of a transparent conductive film also served as a protection for the photodetector. The thickness of the common electrode is usually 1000 mm.
~2,000 Since it is extremely thin, it is insufficient as a protective film, and the common electrode itself is subject to corrosion, making the sensor characteristics susceptible to the influence of the external environment and resulting in poor reliability. .
この発明は上記のような問題点を解消するためになされ
たもので、湿気などの外部環境Ｏ影響を受けない、信頼
性ある密着形イメージセンサ基板を得ることを目的とす
る０
〔問題点を解決するための手段〕
この発明に係る密着形イメージセンサ基板は、共通電極
の上層を高透明の絶縁性樹脂被膜で被覆したものでるる
。This invention was made to solve the above-mentioned problems, and aims to provide a reliable contact type image sensor substrate that is not affected by the external environment such as humidity. Means for Solving the Problem] The contact type image sensor substrate according to the present invention is one in which the upper layer of the common electrode is coated with a highly transparent insulating resin film.
この発明における高透明の絶縁性樹脂被膜は、被写体原
稿からの反射光をほとんど減衰させることなく光検出素
子に透過せしめると共に、共通電極および光検出素子を
外部環境から保護する。The highly transparent insulating resin film of the present invention allows reflected light from the subject document to pass through the photodetecting element with almost no attenuation, and protects the common electrode and the photodetecting element from the external environment.
第１図はこの発明の一実施例の構成を示し、図Ａはその
断面図、図Ｂはその平面図で、前述の第２図の従来例と
同一符号は同等部分を示し、その重複説明を避ける。第
２図において、（５）は共通電極（４）の上を覆うよう
に形成された透光性樹脂被膜Ｉ；
である。なお、個別電極（２）は図Ｂ４ （２ａ） −
（２ｂＬ （２ｃ）で示すように配列されている。FIG. 1 shows the configuration of an embodiment of the present invention, FIG. A is a sectional view thereof, and FIG. B is a plan view thereof. The same reference numerals as in the conventional example shown in FIG. Avoid. In FIG. 2, (5) is a transparent resin film I formed to cover the common electrode (4). In addition, the individual electrode (2) is shown in Figure B4 (2a) -
(2bL) They are arranged as shown in (2c).
アモルファスシリコン（３）のうち、透光性樹脂被膜（
５）及び共通電極（４）を透過した被写体原稿からの反
射光が照射された部分の電気抵抗が急減する０従って、
その部分の個別電極（２）と共通電極（４）との間に流
れる電流が急変し、光が検出される。アモルファスシリ
コン（３）のうち光検出部は共通電極（４）と透光性樹
脂被膜（５）とによって２重に保護される。Among amorphous silicon (3), transparent resin coating (
5) and the electrical resistance of the part irradiated with the reflected light from the subject original that has passed through the common electrode (4) decreases rapidly.
The current flowing between the individual electrode (2) and the common electrode (4) in that part suddenly changes, and light is detected. The photodetecting portion of the amorphous silicon (3) is doubly protected by a common electrode (4) and a transparent resin coating (5).
また、アモルファスシリコン（３）のうち共通電極（４
）で被覆されていない部分も透光性樹脂被膜（５）Ｋよ
って保護される。In addition, the common electrode (4) of the amorphous silicon (3)
) is also protected by the transparent resin coating (5)K.
透光性樹脂被膜（５）の硬度が硬すぎると基板・センサ
素子材料との熱膨張係数の差に寄因する機械的応力が大
きくな〕センナ素子が破壊するので、透光性樹脂被膜（
５）はエンピッ硬度３Ｈよシ軟らかいことが望ましい。If the hardness of the translucent resin coating (5) is too hard, the mechanical stress due to the difference in thermal expansion coefficient between the substrate and the sensor element material will become large] and the Senna element will be destroyed.
5) is preferably softer than 3H in hardness.
アモルファスシリコン（３）中に十分な光励起キャリア
を発生させるためには透光性樹脂被膜（５）に波長６０
０ｎｍの可視光の透過率９０チ以上が要求される０この
必要透過率と使用可能な樹脂レジンの粘度、耐環境性等
を総合すると、透光性樹脂被膜（５）の膜厚は１〜２０
０μｍに限定される。体積抵抗率はセンサ駆動上１０
Ωａｍ以上は必要である。以上の条件を満たす樹脂の
ガラス転移温度は一り０℃〜３９０’Ｃに限定される。In order to generate sufficient photoexcited carriers in the amorphous silicon (3), the transparent resin coating (5) must be coated with a wavelength of 60 nm.
A transmittance of 90 cm or more for visible light at 0 nm is required. Considering this required transmittance and the viscosity, environmental resistance, etc. of usable resins, the film thickness of the transparent resin coating (5) is 1 to 1. 20
Limited to 0 μm. Volume resistivity is 10 on sensor drive
Ωam or more is required. The glass transition temperature of a resin that satisfies the above conditions is limited to 0°C to 390'C.
く具体例１〉
個別電極（２）、アモルファスシリコン（３）、共通電
極（４）のパターン（以下、光検出素子と記す）が形成
されたガラス基板上に、テトロン１００メツシユ、乳剤
３０μｍのスクリーン版を用い、ＥＣＲ／Ｈ−７１００
（注文ベークライト製）などの透光性エポキシ樹脂を、
スクリーンギャップ２ｍｍ、スキージダウンストップ０
．５ｍｍ、速度１０ｍｍ／ｓｅｃの条件で所定形状にス
クリーン印刷した。これを温度８５°Ｃで３０分間放置
し、温度上昇に伴うエポキシ樹脂の粘度低下を利用し、
脱泡・レベリングを行なった。しかる後、これを温度１
００℃で１時間、１２０’Ｑで３時間保持することによ
って、エポキシ樹脂を硬化せしめ、膜厚３６μｍの所定
形状の透光性樹脂被膜（５）を得た。Specific Example 1 A screen with a Tetron 100 mesh and an emulsion of 30 μm was placed on a glass substrate on which patterns of individual electrodes (2), amorphous silicon (3), and a common electrode (4) (hereinafter referred to as photodetecting elements) were formed. Using a plate, ECR/H-7100
Translucent epoxy resin such as (made by custom Bakelite),
Screen gap 2mm, squeegee down stop 0
．． Screen printing was performed in a predetermined shape under conditions of 5 mm and a speed of 10 mm/sec. This was left at a temperature of 85°C for 30 minutes, and taking advantage of the decrease in viscosity of the epoxy resin as the temperature rose,
Defoaming and leveling were performed. After that, this temperature is 1
The epoxy resin was cured by holding at 00° C. for 1 hour and at 120′Q for 3 hours to obtain a translucent resin film (5) having a predetermined shape and a thickness of 36 μm.
く具体例２〉
光検出素子が形成されたガラス基板上に、テトロン１０
０メツシユ、乳剤３０μｍのスクリーン版を用い、ＫＥ
１０９Ａ／Ｂ （信越化学製）などの透光性シリコーン
樹脂を、スクリーンギャップ１．５ｍｍ、スキージダウ
ンストップ０．５ｍｍ、速度１０ｍｍ／ｓｅｃの条件で
所定形状にスクリーン印刷した。これを真空中に２０分
間放置して脱泡した後、大気中で２０分間放置してレベ
リングを行なった。しかる後、温度１２０℃で２時間保
持することによってシリコーン樹脂を硬化せしめ、膜厚
２９μｍの所定形状の透光性樹脂被膜（５）を得た０
く具体例３〉
光検出素子が形成されたガラス基板上に、ＰＩＸ−２４
００（日立化成製）などの透光性ポリイミド樹脂を、１
０００ ｒｐｍ 、 ６０ ｅθＣの条件でスピンコー
ドし、窒素雰囲気中、温度１３０℃で３０分間、２００
℃で画分間保持し、ポリイミド樹脂を半硬化させた０そ
の上に０ＭＲ８り （東京応化工業製）などのネガ形レ
ジストをホトリソグラフィー法によシパターエンダし、
温度１３０℃で１時間ポストベークした０ヒドラジン・
エチレンジアミン系のエッチャントを用い、ネガ形レジ
ストをマスクにポリイミドをエツチングした後、Ｋ２Ｏ
２（東京応化工業＃）などの剥離液を用いネガ形レジス
トを剥離した０これを窒素雰囲気中、温度２５０℃で３
０分、３００’Ｑで１時間保持することによってポリイ
ミドを硬化させ、膜厚３．５μｍの所定形状の透光性樹
脂被膜（５）を得た０ＡＬ−２００（宇部興産層）など
の透光性ポリアミド樹脂、ＨＬ−１２００（日立化成製
）などの透光性ポリエーテルアミド樹脂についても同様
のプロセスにより、所定形状の透光性樹脂被膜（５）を
得た０く具体例４〉
光検出素子が形成されたガラス基板上に、ａ −０８６
６（日本化薬層）などの紫外線硬化形透光性アクリル樹
脂を１１０００ｒｐ 、 ６０ｓｅｃの条件でスピンコ
ードした後、メタルマスクを用いて光検出部を含む所定
部分に紫外線を照射すること忙よシ、紫外線照射部分の
アクリル樹脂を硬化させたｏトリクロルエチレンなどの
有機溶剤を用いて未硬化のアクリル樹脂を溶解・除去せ
しめ、膜厚９μｍの所定形状の透光性樹脂被膜（５）を
得た。Specific example 2> Tetron 10 was placed on a glass substrate on which a photodetecting element was formed.
Using a screen plate with 0 mesh and 30 μm emulsion, KE
A translucent silicone resin such as 109A/B (manufactured by Shin-Etsu Chemical) was screen printed into a predetermined shape under conditions of a screen gap of 1.5 mm, a squeegee downstop of 0.5 mm, and a speed of 10 mm/sec. This was left in a vacuum for 20 minutes to remove bubbles, and then left in the air for 20 minutes for leveling. Thereafter, the silicone resin was cured by holding at a temperature of 120° C. for 2 hours to obtain a translucent resin film (5) in a predetermined shape with a film thickness of 29 μm.Specific Example 3 A photodetector element was formed. PIX-24 on the glass substrate
Translucent polyimide resin such as 00 (manufactured by Hitachi Chemical), 1
Spin coded at 000 rpm and 60 eθC for 30 minutes at 130 °C in a nitrogen atmosphere at 200 °C.
A negative resist such as 0MR8 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) is cypater-endered on the semi-cured polyimide resin by photolithography.
0 hydrazine post-baked at a temperature of 130°C for 1 hour.
After etching the polyimide using an ethylenediamine-based etchant and using a negative resist as a mask, K2O
2 (Tokyo Ohka Kogyo #) or other stripping solution was used to remove the negative resist. This was removed at a temperature of 250°C in a nitrogen atmosphere.
The polyimide was cured by holding at 0 minutes and 300'Q for 1 hour to obtain a transparent resin coating (5) with a thickness of 3.5 μm and a predetermined shape, such as 0AL-200 (Ube Industries). A similar process was applied to transparent polyetheramide resins such as polyamide resin and HL-1200 (manufactured by Hitachi Chemical) to obtain a transparent resin coating (5) in a predetermined shape.Specific Example 4> Photodetection On the glass substrate on which the element was formed, a-086
After spin-coding an ultraviolet curable translucent acrylic resin such as No. 6 (Nippon Kayaku Layer) at 11,000 rp and 60 seconds, a metal mask was used to irradiate ultraviolet rays to a predetermined area including the photodetector. The uncured acrylic resin was dissolved and removed using an organic solvent such as o-trichlorethylene, which cured the acrylic resin in the ultraviolet irradiated area, to obtain a translucent resin film (5) in a predetermined shape with a film thickness of 9 μm. .
スピラツクＴ−５０２（昭和高分子製）などの紫外線硬
化形透光性スピロアセタール樹脂についても同様のプロ
セスによシ、所定形状の透光性樹脂被膜（５）を得た。A translucent resin coating (5) having a predetermined shape was obtained using a similar process using an ultraviolet curable translucent spiroacetal resin such as Spirac T-502 (manufactured by Showa Kobunshi).
次に本発明の作用効果を各具体例について示す０第１表
は光検出素子に各具体例の透光性樹脂被膜を被覆した場
合に、素子イ能（樹脂自体のリーク電流を含む）、また
は樹脂の透光性または外観（クラック、剥離など）に実
使用上の支障をきたす時間、回数等を試験項目別Ｋまと
め、透光性樹脂被膜をほどこさない場合と比較したもの
であるＯ第１表から明らかなように、本発明による密着
形イメージセンサ基板は、外部環境の影響を受けに＜＜
、非常に高い信頼性を有している。Next, Table 1 shows the effects of the present invention for each specific example. When a photodetecting element is coated with the transparent resin film of each specific example, the device performance (including leakage current of the resin itself), Or, the time, number of times, etc. that cause problems in actual use with the translucency or appearance (cracks, peeling, etc.) of the resin are summarized by test item, and compared with the case where no translucent resin coating is applied. As is clear from Table 1, the contact type image sensor substrate according to the present invention is not affected by the external environment.
, has very high reliability.
第１表
註 （ト）：素子性能に支障
ＣＢ） ：透光性に支障
（０）：外観に支障
なお、上記実施例では感光材料としてアモルファスシリ
コンを用いたものについて説明したが、これは硫化カド
ミウムであってもよく、上記実施例と同様の効果を奏す
る０
〔発明の効果〕
以上のように、この発明によれば光検出部を含む部分を
透光性樹脂で被覆したので、外部環境の影響を受けに＜
＜、信頼性ある密着形イメージセンサ基板が得られる効
果がある０Notes to Table 1 (G): Problems with device performance CB): Problems with translucency (0): Problems with appearance Note that in the above example, amorphous silicon was used as the photosensitive material, but this [Effects of the Invention] As described above, according to the present invention, since the portion including the photodetecting section is coated with a transparent resin, the external environment Under the influence of <
＜, has the effect of obtaining a reliable contact type image sensor substrate 0
第１図Ａ及びＢはそれぞれこの発明の一実施例による密
着形イメージセンサ基板を示す断面図及び平面図、第２
図は従来の密着形イメージセンサ基板を示す断面図であ
る。
図において、（１）は絶縁性基板、（２）は個別電極、
（３）ハアモルファスシリコン、（４）は共通電極、（
５）は透光性樹脂被膜である０
なお、図中、同一符号は同一、又は相当部分を示す。1A and 1B are a sectional view and a plan view showing a contact type image sensor substrate according to an embodiment of the present invention, respectively;
The figure is a sectional view showing a conventional contact type image sensor substrate. In the figure, (1) is an insulating substrate, (2) is an individual electrode,
(3) amorphous silicon, (4) a common electrode, (
5) is a transparent resin coating 0 In the figures, the same reference numerals indicate the same or corresponding parts.
Claims (5)
ら成る受光素子をもつ、ドット分割形ラインセンサ機能
を有するものにおいて、温度２５℃での体積抵抗率１０
＾１＾４Ωｃｍ以上、波長６００ｎｍの光の透過率９０
％以上の透光性樹脂の被膜によつて、光検出部を含む部
分を膜厚１μｍ〜２００μｍで所定形状に被覆したこと
を特徴とする密着形イメージセンサ基板。(1) A device with a dot-divided line sensor function that has a light-receiving element made of amorphous silicon or cadmium sulfide, with a volume resistivity of 10 at a temperature of 25°C.
^1^4Ωcm or more, transmittance of light with a wavelength of 600nm is 90
1. A contact type image sensor substrate, characterized in that a portion including a photodetecting portion is covered with a film of a transparent resin of 1 μm to 200 μm in a predetermined shape with a film thickness of 1 μm to 200 μm.
徴とする特許請求の範囲第１項記載の密着形イメージセ
ンサ基板。(2) The contact type image sensor substrate according to claim 1, characterized in that an epoxy resin is used as the light-transmitting resin.
特徴とする特許請求の範囲第１項記載の密着形イメージ
センサ基板。(3) The contact type image sensor substrate according to claim 1, wherein a silicone resin is used as the light-transmitting resin.
脂、ポリエーテルアミド樹脂なる物質からなる一群中か
ら任意に選んだ１員を用いたことを特徴とする特許請求
の範囲第１項記載の密着形イメージセンサ基板。(4) A close-contact type according to claim 1, characterized in that the translucent resin is one member arbitrarily selected from the group consisting of polyimide resin, polyamide resin, and polyetheramide resin. Image sensor board.
ル樹脂なる物質からなる一群中から任意に選んだ１員を
用いたことを特徴とする特許請求の範囲第１項記載の密
着形イメージセンサ基板。(5) The contact type image sensor substrate according to claim 1, wherein a member arbitrarily selected from the group consisting of acrylic resin and spiroacetal resin is used as the light-transmitting resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60056408A JPS61214564A (en) | 1985-03-20 | 1985-03-20 | Contact-type image sensor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60056408A JPS61214564A (en) | 1985-03-20 | 1985-03-20 | Contact-type image sensor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61214564A true JPS61214564A (en) | 1986-09-24 |
Family
ID=13026331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60056408A Pending JPS61214564A (en) | 1985-03-20 | 1985-03-20 | Contact-type image sensor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61214564A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0382540A2 (en) * | 1989-02-10 | 1990-08-16 | Canon Kabushiki Kaisha | Sensor chip and photoelectric conversion apparatus using the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59229880A (en) * | 1983-06-08 | 1984-12-24 | Fuji Xerox Co Ltd | Photoelectric conversion element |
-
1985
- 1985-03-20 JP JP60056408A patent/JPS61214564A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59229880A (en) * | 1983-06-08 | 1984-12-24 | Fuji Xerox Co Ltd | Photoelectric conversion element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0382540A2 (en) * | 1989-02-10 | 1990-08-16 | Canon Kabushiki Kaisha | Sensor chip and photoelectric conversion apparatus using the same |
| US5592222A (en) * | 1989-02-10 | 1997-01-07 | Canon Kabushiki Kaisha | Sensor chip and photo-electric conversion apparatus using the same |
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