JPS61214539A - Wiring formation - Google Patents

Abstract

PURPOSE:To provide a wiring on a wafer by a method wherein electromagnetic waves are irradiated on the body to be formed the wiring thereon in an atmosphere of an organic metal compound and the metal being contained in the compound is selectively deposited on the body. CONSTITUTION:(CH3)3Al vapor 2 is introduced in a container 1, an LSI wafer 3 is placed on the bottom of the container 1, a laser beam 5 is irradiated on the wafer from a light source 4 and the Al wirings 8 and 8a being already provided of the circuit blocks 6a and 6b of each block are mutually connected by selectively depositing an Al wirings 8b between the Al wirings 8 and 8a. This wiring can be easily formed in a fine form with the shift only of the laser beam 5. After this, the wafer 3 is covered with a protective film and the wiring to be provided on the wafer is completed. This method can be applied to a wiring substrate such as a pelletizing substrate as well.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a wiring formation technique, and relates to a technique that is particularly effective and applicable to, for example, the formation of fine wiring in semiconductor devices and the like.

[View technology]

Fine wiring on a pellet or a wiring board or the like on which the pellet is mounted can only be formed by making full use of lithography technology, which usually consists of many steps.

Therefore, when it is desired to newly form part of the wiring, the problem arises that the desired purpose cannot be easily achieved. In a so-called full wafer LSI, which is formed by organically connecting multiple circuit blocks, if you want to change the logic by changing some of the wiring and make it applicable for various purposes, The inventors have found that this is particularly problematic in cases where wiring must be repaired because some blocks are defective.

Regarding lithography technology, please refer to [Ultra LS
It is explained in detail in I Device Handbook JP134 to P138.

[Purpose of the invention]

An object of the present invention is to provide a technique that allows easy formation of fine wiring.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Summary of the invention]

A brief overview of typical inventions disclosed in this application is as follows.

For example, by irradiating an object with electromagnetic waves in an atmosphere of an organometallic compound, metals contained in the compound can be selectively deposited on the irradiated portion, thereby making it possible to selectively deposit metals contained in the compound on a predetermined portion of the object. The deposition of wiring is accomplished.

〔Example〕

FIG. 1 is a schematic explanatory diagram showing a state in which a wiring forming method according to an embodiment of the present invention is applied to a full wafer LSI that is a large pellet.

Here, 1 is a reaction vessel, and trimethylaluminum 2 (organometallic compound) is placed in the vapor state in the vessel 1. On the bottom of this container 1, a full wafer LSI 3, which is an object on which wiring is to be formed, before being coated with a final packaging film, is placed. Laser light 5 is irradiated.

Figure 2 shows a full wafer LSr3 on which wiring is to be formed.
2 is a plan view schematically showing the circuit block 6, which is formed by a collection of a large number of circuit blocks 6.

FIG. 3 is an enlarged view of a part of the full wafer LSI 3 on which wiring has been formed by irradiating the laser beam 5 as described above. Here, &I7 indicates the boundary between two adjacent circuit blocks 6a and 6b, and each block 6a and 6b has wiring lines 8 and 8 made of aluminum, respectively.
a was formed in advance, and the ends of both wirings 8 and 8a were connected by a wiring 8b made of aluminum newly formed by the method described above, thereby achieving electrical connection between both blocks 6a and 6b. Condition is indicative.

The wiring 8b can be formed into a fine shape corresponding to the width of the laser beam by simply moving the irradiation of the laser beam 5 from the end of the wiring 8 to the end of the wiring Qa under the conditions shown in FIG. It can be easily formed. Thereafter, the full wafer LS[3 is completed through normal processes such as final passivation film formation.

As described above, according to the method of this embodiment, fine wiring having a desired shape can be easily formed in one step. Therefore, as in the full wafer LSI 3 described above, it is unavoidable that some defects will occur in the circuit block 6, so it may be necessary to newly form a part of the wiring, or it may be necessary to change a part of the wiring. When forming wiring on pellets that can be used for other purposes, this is an extremely effective technique because the wiring can be formed quickly.

〔effect〕

By irradiating the object with electromagnetic waves in an atmosphere of Tl+ and an organometallic compound, the metal contained in the compound can be selectively deposited on the irradiated area, thereby forming a predetermined shape of the object. Desired wiring can be easily formed in the area.

(2) By applying the method described in (11) above to the formation of wiring on a pellet, the pellet can be repaired or changed in function quickly.

+31. By using laser as electromagnetic wave,
Fine wiring can be easily formed.

(4) When forming wiring on a wafer, by applying the method described above before forming a passivation film, wiring can be easily formed in the wafer processing step.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

For example, although only trimethylaluminum has been explained as an organometallic compound, it is not limited to this.
Any other alkyl substituents, dialkyl cadmium, and other organometallic compounds that can be used for wiring formation may be used.

Further, although the case where a laser is used as the electromagnetic wave is shown, it goes without saying that other electromagnetic waves may be used.

Furthermore, although the description has been made only of a full wafer LSI, which is a large pellet, as the object on which wiring is formed, the present invention is not limited to this, and can also be applied to general pellets.

In addition, in the embodiment, a method is shown in which the method is applied before the formation of the pancibasilon film, but it can of course also be applied to the case where wiring is formed on the pancibasilon film after the formation of the pancibasilon film.

[Application field]

The above explanation will mainly focus on pellets (wafers), which is the field of application that was the background of the invention made by the present inventor.
Although the present invention has been described with reference to the case where it is applied to, the present invention is not limited thereto, and is an effective technique that can also be applied to wiring boards such as pellet mounting boards, for example.

[Brief explanation of the drawing]

FIG. 1 is a schematic explanatory diagram showing a state in which a wiring forming method according to an embodiment of the present invention is applied, and FIG. 2 is a plan view showing a full wafer LSI to which the wiring forming method is applied. FIG. 3 is an enlarged plan view showing a wiring forming part that is a part of the full wafer LSI. 1... Container, 2... Trimethyl aluminum (trialkyl aluminum), 3... Full wafer LSI,
4... Light source, 5... Laser light, 6.6a, 6b.
...Block, 7...Line, 8.8a, 8b...Wiring.

Claims (1)

[Scope of Claims] 1. A wiring forming method in which electromagnetic waves are locally irradiated onto the surface of an object to be formed in an atmosphere of an organometallic compound, and metal is deposited on the irradiated portion. 2. The wiring forming method according to claim 1, wherein the organometallic compound is trialkylaluminum or dialkylcadmium. 3. The wiring forming method according to claim 1, wherein the electromagnetic wave is a laser. 4. The wiring forming method according to claim 1, wherein the object to be formed is a pellet or a wiring board. 5. The wiring forming method according to claim 4, wherein the pellet is a full wafer LSI. 6. The wiring forming method according to claim 4, wherein the wiring is formed before forming the passivation film. 7. The wiring forming method according to claim 4, wherein the wiring is formed after forming the passivation film.