JPS61210177A - Inline type thin film forming device - Google Patents

Inline type thin film forming device

Info

Publication number
JPS61210177A
JPS61210177A JP5050885A JP5050885A JPS61210177A JP S61210177 A JPS61210177 A JP S61210177A JP 5050885 A JP5050885 A JP 5050885A JP 5050885 A JP5050885 A JP 5050885A JP S61210177 A JPS61210177 A JP S61210177A
Authority
JP
Japan
Prior art keywords
chamber
substrate
deposition
thin film
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5050885A
Other languages
Japanese (ja)
Inventor
Takashi Obara
小原 尚
Hisao Nozawa
野沢 悠夫
Hideki Nishida
西田 秀来
Akira Eda
昭 江田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP5050885A priority Critical patent/JPS61210177A/en
Publication of JPS61210177A publication Critical patent/JPS61210177A/en
Pending legal-status Critical Current

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  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To provide a titled device which decreases a loss time by cleaning and to improves throughput by providing successively and adjacently a substrate charging chamber, a deposition chamber for forming a thin film on a substrate and a substrate taking out chamber. CONSTITUTION:This inline type thin film forming device is constituted by providing successively and adjacently the substrate charging chamber 1, the deposition chamber 2 provided with a sputtering electrode 7 carrying a target 6 which is a vapor deposition source for depositing the thin film on the substrate and the substrate taking out chamber 3. An antisticking plate 8 to be disposed in the chamber 2 so as to cover the target 6, etc. of the above-mentioned device is provided conveyably by a suitable conveying means to the chambers 1-3. The clean plate 8 is carried from the chamber 1 through a valve 4 into the chamber 2 to prevent the sticking of the material for deposition on the wall surface. The plate 8 is taken out through the chamber 3 in the stage of cleaning the plate so that the loss time by the cleaning is decreased.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は基板にスパッタリングまたは蒸着によって薄膜
を被着させるインライン型薄膜形成装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to an in-line thin film forming apparatus for depositing a thin film onto a substrate by sputtering or vapor deposition.

〔発明の背景〕[Background of the invention]

インライン型薄膜形成装置は、基板仕込み室、基板に薄
膜を被着させる被着源を有する被着室及び基板取り出し
室が順次隣接して設けられている。
The in-line thin film forming apparatus includes a substrate loading chamber, a deposition chamber having a deposition source for depositing a thin film onto a substrate, and a substrate unloading chamber, which are successively adjacent to each other.

このように、インライン型薄膜形成装置は、被着室が基
板仕込み室及び基板取り出し室と分離しているので、ス
ループットは向上する。しかし、スループットは被着室
に体積する付着物の剥離のために制限されてしまう。
In this way, in the in-line thin film forming apparatus, the deposition chamber is separated from the substrate loading chamber and the substrate unloading chamber, so that the throughput is improved. However, throughput is limited due to detachment of deposits that accumulate in the deposition chamber.

そこで、被着中の異物を減少させる目的で、被着室の壁
に付着した付着物を時々剥離して除去する必要がある。
Therefore, in order to reduce the amount of foreign matter being deposited, it is necessary to occasionally peel off and remove the deposits adhering to the walls of the deposition chamber.

この壁に付着した付着物を剥離除去させるには、被着室
を大気にする必要があるので、その間製品を製作できな
い。また一度に数枚〜数十枚被着するバッチ式の薄膜形
成装置に比較すると、インライン型薄膜形成装置は毎葉
処理が多く、装置内部の付着物の量も多くなるので、バ
ッチ式より頻繁lこ被着室の付着物の剥離をする必要が
ある。
In order to peel off and remove the deposits adhering to the walls, it is necessary to make the deposition chamber atmospheric, so products cannot be manufactured during this time. In addition, compared to batch-type thin film forming equipment that deposits several to dozens of sheets at a time, in-line thin film forming equipment processes more sheets each time, and the amount of deposits inside the equipment increases, so it is more frequent than batch-type thin film forming equipment. It is necessary to remove the deposits from the deposition chamber.

〔発明の目的〕[Purpose of the invention]

本発明の一つの目的は、被着室内部の清浄を簡便に行な
うことができ、清浄によるロスタイムの減少を図ること
ができるインライン型薄膜形成装置を提供することにあ
る。
One object of the present invention is to provide an in-line thin film forming apparatus that can easily clean the inside of a deposition chamber and reduce loss time due to cleaning.

本発明の他の目的は、スループットの向上を図ることが
できるインライン型薄膜形成装置を提供すること−こあ
る。
Another object of the present invention is to provide an in-line thin film forming apparatus that can improve throughput.

〔発明の概要〕[Summary of the invention]

本発明の一実施例によれば、被着源を覆うようIこ防着
板を配設し、しかも防着板を被着室外および被着室内に
搬送できるインライン型薄膜形成装置が提供され、これ
lこより被着室の清浄を簡単に行なうことができるとい
う効果が得られる。
According to one embodiment of the present invention, there is provided an in-line thin film forming apparatus in which a deposition prevention plate is disposed to cover a deposition source, and the deposition prevention plate can be transported outside the deposition chamber and into the deposition chamber. This provides the effect that the deposition chamber can be cleaned easily.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を第1図により説明する。gg
1図はインライン型スパッタリング装置を示す。基板仕
込み室1と、被着室2と、基板取り出し室3とが順次隣
接して設けられ、各室1.2.3間にはバルブ4.5が
上下動可能に設けられている。前記被着室2には基板に
薄膜を被着させるターゲット6を有するスパッタ電極7
が設けられ。
An embodiment of the present invention will be described below with reference to FIG. gg
Figure 1 shows an in-line sputtering device. A substrate loading chamber 1, a deposition chamber 2, and a substrate unloading chamber 3 are provided adjacent to each other in this order, and a valve 4.5 is provided between each chamber 1.2.3 so as to be movable up and down. The deposition chamber 2 includes a sputter electrode 7 having a target 6 for depositing a thin film on the substrate.
is established.

このスパッタ電極7は第2図に示す円筒型の防着板8で
覆われている。防着板8は、自動的に基板仕込み室1の
2点鎖線の位置より被着室2の実線の位置に、また被着
室2の位置より基板取り出し室3の2点鎖線の位置に搬
送できるようIこなっている。
This sputter electrode 7 is covered with a cylindrical adhesion prevention plate 8 shown in FIG. The adhesion prevention plate 8 is automatically transported from the position indicated by the two-dot chain line in the substrate preparation chamber 1 to the position indicated by the solid line in the deposition chamber 2, and from the position in the deposition chamber 2 to the position indicated by the two-dot chain line in the substrate removal chamber 3. I am doing my best to be able to do it.

次に作用について説明する。まず、基板仕込み室1(こ
清浄した防着板8を置く。そして基板仕込み室1を真空
引きした後、バルブ4を開き、防着板8を基板仕込み室
1より被着室2へ搬送した後、バルブ4を閉じる。
Next, the effect will be explained. First, the cleaned adhesion prevention plate 8 was placed in the substrate preparation chamber 1. After evacuating the substrate preparation chamber 1, the valve 4 was opened and the adhesion prevention plate 8 was transferred from the substrate preparation chamber 1 to the deposition chamber 2. After that, valve 4 is closed.

この状態で基板にスパッタ被着させる。この基板へのス
パッタ被着は、次の動作によって行なわれる。まず基板
を基板仕込み室1に設置する。そして基板仕込み室1を
真空引きして所定の真空度になったらバルブ4を開き、
基板を防着板8の上部穴の直上に搬送し、バルブ4を閉
じた後、スパッタ被着を行なう。被着後はバルブ5を開
け、基板を被着室2より基板取り出し室3に搬送する。
In this state, it is sputter deposited on the substrate. Sputter deposition on this substrate is accomplished by the following operations. First, a substrate is installed in the substrate preparation chamber 1. Then, the substrate preparation chamber 1 is evacuated, and when the predetermined degree of vacuum is reached, the valve 4 is opened.
After the substrate is transported directly above the upper hole of the adhesion prevention plate 8 and the valve 4 is closed, sputter deposition is performed. After the deposition, the valve 5 is opened and the substrate is transported from the deposition chamber 2 to the substrate removal chamber 3.

このようにして被着を重ね所定の回数になったら、防着
板8の取り出し作業を行なう。この防着板8の取り出し
は、バルブ5を開け、防着板8を被着室2より基板取り
出し室3の2点鎖線の位置に搬送し、その後バルブ5を
閉じる。次に基板取り出し室3をリークして防着板8を
堰り出す。そして被着室2には前記した操作によって清
浄された新しい防着板8を設置する。
When the deposition is repeated a predetermined number of times in this manner, the deposition prevention plate 8 is removed. To take out the adhesion prevention plate 8, the valve 5 is opened, the adhesion prevention plate 8 is transported from the deposition chamber 2 to the position indicated by the two-dot chain line in the substrate removal chamber 3, and then the valve 5 is closed. Next, the substrate removal chamber 3 is leaked and the adhesion prevention plate 8 is dammed out. Then, a new adhesion prevention plate 8 that has been cleaned by the above-described operation is installed in the adhesion chamber 2.

このようlこ、被着室2を清浄にするには、被着室2を
大気圧にすることなしに、防着板8を被着室2より基板
取り出し室3に搬送し、また新しい防着板8を基板仕込
み室1から被着室2に搬送することにより行なえるので
、清浄によるロスタイムが減少し、スループットが向上
する。
In this way, in order to clean the deposition chamber 2, the deposition prevention plate 8 is transported from the deposition chamber 2 to the substrate removal chamber 3, and then a new Since this can be done by transporting the plate 8 from the substrate preparation chamber 1 to the deposition chamber 2, loss time due to cleaning is reduced and throughput is improved.

第3図は前記した防着板8の搬送および上下動機構の一
実施例を示す。防着板8には外周に搬送用のつば部8a
が形成されている。スパッタリング装置の両側壁10に
は、それぞれ多数のピ/11.12が平行に横一列に回
転自在−こ設けられており、ピン11.12の側壁10
内に突出した部分には、前記つば部8aを支持するロー
ラ13.14゛が固定されている。防着板8を上下動さ
せる部分に対応したピン11の側壁10外の部分には、
ピン11と共lこ回転可能で、かつピ/11に対して軸
方向に摺動可能にスプロケット15が挿着され、他のピ
ン12の側壁10外の部分1こは、スプロケット16が
固定されており、これらスプロケット15.16には図
示しない駆動手段で駆動されるチェーン17が掛は渡さ
れている。
FIG. 3 shows an embodiment of a mechanism for conveying and vertically moving the deposition prevention plate 8 described above. The adhesion prevention plate 8 has a flange portion 8a for transportation on the outer periphery.
is formed. On both side walls 10 of the sputtering apparatus, a large number of pins 11, 12 are rotatably provided in parallel horizontally in a row, and the side walls 10 of the pins 11, 12 are arranged horizontally in parallel.
Rollers 13 and 14' that support the collar portion 8a are fixed to the inwardly protruding portion. The portion of the pin 11 outside the side wall 10 corresponding to the portion that moves the anti-adhesion plate 8 up and down includes:
A sprocket 15 is inserted so as to be rotatable with the pin 11 and slidable in the axial direction with respect to the pin 11, and a sprocket 16 is fixed to a portion of the other pin 12 outside the side wall 10. A chain 17 driven by a drive means (not shown) is attached to these sprockets 15 and 16.

前記ピン11の端部lこは係合板18が固定されており
、この係合板18には図示しない駆動手段で矢印A方向
に駆動されるローラ駆動板19が係合している。またス
パッタリング装置の底板20には、防着板8を上下動さ
せる部分に防着板8の底面を支持する支持リング21が
配設されており、この支持リング21は底板20の外側
より図示しない駆動手段で上下動させる上下動板22に
固定されている。
An engagement plate 18 is fixed to the end portion of the pin 11, and a roller drive plate 19 is engaged with the engagement plate 18, which is driven in the direction of arrow A by a drive means (not shown). Further, on the bottom plate 20 of the sputtering apparatus, a support ring 21 that supports the bottom surface of the deposition prevention plate 8 is disposed at a portion where the deposition prevention plate 8 is moved up and down. It is fixed to a vertically moving plate 22 that is moved vertically by a driving means.

次に作用について説明する。防着板8を搬送する場合に
は、ローラ13.14は2点鎖線の状態にあり、防着板
8のつば部8aがローラ13,14上に載置されている
。この状態でチェーン17を駆動すると、スプロケット
15.16およびピン11.12を介してローラ13.
14が回転し、防着板8は左側より右側lこ搬送される
。そして。
Next, the effect will be explained. When the adhesion prevention plate 8 is conveyed, the rollers 13 and 14 are in the state shown by the two-dot chain line, and the collar portion 8a of the adhesion prevention plate 8 is placed on the rollers 13 and 14. When the chain 17 is driven in this state, the roller 13.
14 rotates, and the adhesion prevention plate 8 is conveyed from the left side to the right side. and.

防着板8が搬送されてローラ13の所定の上下動位置に
位置すると、防着板8によって図示しないセ/すが作動
し、このセンサの検出信号によって上下動板22が上昇
して防着板8の底面を支持する。この状態でローラ駆動
板19が2点鎖線の位置より実線の位置に後退し、ロー
ラ13は防着板8のつば部8aの外側に位置する。次に
上下動板22が下降して防着板8は実線の状態lこ位置
させられる。これにより、防着板8は第1図に示すスパ
ッタ電極7を覆うように配設される。
When the anti-adhesive plate 8 is conveyed and positioned at a predetermined vertical movement position of the roller 13, an unillustrated chamber is activated by the anti-adhesive plate 8, and the vertically movable plate 22 is raised by the detection signal of this sensor to prevent the anti-adhesive material. Supports the bottom surface of the plate 8. In this state, the roller drive plate 19 retreats from the position indicated by the two-dot chain line to the position indicated by the solid line, and the roller 13 is located outside the flange portion 8a of the adhesion prevention plate 8. Next, the vertically movable plate 22 is lowered, and the adhesion prevention plate 8 is positioned as shown by the solid line. Thereby, the adhesion prevention plate 8 is arranged so as to cover the sputter electrode 7 shown in FIG.

防着板8を被着室2より基板取出し室3に搬送するには
、まず前記と逆に上下動板22を上昇させる。次にロー
ラ駆動板19を前記と逆に作動させてローラ13を防着
板8のつば部8aの下方に位置させる。続いて上下動板
22を下降させると、防着板8はローラ131こよって
支持される。この状態でチェーン17を駆動すると、ロ
ーラ13.14が回転し、防着板8は左方向に搬送され
る。
In order to transport the adhesion prevention plate 8 from the deposition chamber 2 to the substrate unloading chamber 3, first, the vertical movement plate 22 is raised in the opposite manner to the above. Next, the roller drive plate 19 is operated in the opposite direction to the above to position the roller 13 below the flange 8a of the adhesion prevention plate 8. Subsequently, when the vertical moving plate 22 is lowered, the adhesion prevention plate 8 is supported by the roller 131. When the chain 17 is driven in this state, the rollers 13 and 14 rotate, and the adhesion prevention plate 8 is conveyed to the left.

なお、上記実施例においては、スパッタリング装置ζこ
ついて説明したが、蒸着装置でも同様な効果が得られる
In the above embodiments, the sputtering apparatus ζ has been explained, but the same effect can be obtained using a vapor deposition apparatus.

〔発明の効果〕〔Effect of the invention〕

以上の説明から明らかなように1本発明によれば、被着
室の清浄を簡便に行なうことができ、ロスタイムが減少
し、スループットは向上する。
As is clear from the above description, according to the present invention, the deposition chamber can be cleaned easily, loss time is reduced, and throughput is improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明になるインライン型薄膜形成装置の一実
施例を示す概略図、第2図は防着板を一部破断て示す斜
視図、第3図は防着板の搬送および上下動機構を示し、
+a+は平面断面図、iblは縦断面図である。 1・・・基板仕込み室、   2・・・被着室、3・・
・基板取り出し室、   7・・・スパッタ電極、8・
・・防着板、       11.12・・・ピン、1
3.14・・・ローラ、   15.16・・・スプロ
ケット、   17・・・チェー/。 第1図 第2図 第3図 (a)
Fig. 1 is a schematic diagram showing an embodiment of the in-line thin film forming apparatus according to the present invention, Fig. 2 is a partially cutaway perspective view of the adhesion prevention plate, and Fig. 3 is the transportation and vertical movement of the adhesion prevention plate. showing the mechanism,
+a+ is a plan sectional view, and ibl is a longitudinal sectional view. 1... Board preparation room, 2... Deposition room, 3...
・Substrate removal chamber, 7... Sputter electrode, 8.
...Adhesion prevention plate, 11.12...Pin, 1
3.14...roller, 15.16...sprocket, 17...chain/. Figure 1 Figure 2 Figure 3 (a)

Claims (1)

【特許請求の範囲】[Claims] 基板仕込み室、基板に薄膜を被着させる被着源を有する
被着室及び基板取り出し室が順次隣接して設けられたイ
ンライン型薄膜形成装置において、前記被着源を覆うよ
うに前記被着室に配設された防着板と、この防着板を前
記基板仕込み室から前記被着室及びこの被着室から前記
基板取り出し室に搬送する搬送手段とを備えたことを特
徴とするインライン型薄膜形成装置。
In an in-line thin film forming apparatus in which a substrate preparation chamber, a deposition chamber having a deposition source for depositing a thin film on a substrate, and a substrate removal chamber are successively provided adjacent to each other, the deposition chamber is arranged so as to cover the deposition source. an in-line type characterized by comprising: a deposition prevention plate disposed in the substrate preparation chamber; and a conveying means for conveying the deposition prevention plate from the substrate loading chamber to the deposition chamber and from the deposition chamber to the substrate removal chamber. Thin film forming equipment.
JP5050885A 1985-03-15 1985-03-15 Inline type thin film forming device Pending JPS61210177A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5050885A JPS61210177A (en) 1985-03-15 1985-03-15 Inline type thin film forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5050885A JPS61210177A (en) 1985-03-15 1985-03-15 Inline type thin film forming device

Publications (1)

Publication Number Publication Date
JPS61210177A true JPS61210177A (en) 1986-09-18

Family

ID=12860898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5050885A Pending JPS61210177A (en) 1985-03-15 1985-03-15 Inline type thin film forming device

Country Status (1)

Country Link
JP (1) JPS61210177A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011204926A (en) * 2010-03-25 2011-10-13 Seiko Instruments Inc Sputtering system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011204926A (en) * 2010-03-25 2011-10-13 Seiko Instruments Inc Sputtering system

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