JPH0543471Y2 - - Google Patents

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a horizontal vapor phase growth apparatus for forming a thin film on a substrate surface.

[Conventional technology]

A vapor phase growth method using a horizontal vapor phase growth apparatus involves raising the temperature of a substrate on a holder placed in a reaction chamber, and introducing vapor phase growth gas into the reaction chamber so as to flow approximately parallel to the surface of the substrate. and do it. As a result, the vapor phase growth gas is thermally decomposed in the vicinity of the substrate, and reaction products are deposited on the substrate to form a thin film. In this case, it is common to provide a flow channel within the reaction chamber in order to smooth the flow of the vapor phase growth gas and bring it into contact with the substrate. Furthermore, when performing vapor phase growth on a large diameter substrate, a flow channel may be provided to partition the inside of the reaction chamber in order to increase the utilization efficiency of vapor phase growth gas.

However, the reaction products adhere not only on the substrate but also around the substrate and on the inner surface of the reaction chamber downstream of the substrate. In particular, reaction products adhering to the upper surface of the reaction chamber above the substrate and downstream of the substrate become more likely to peel off as the amount of adhesion increases, and may fall onto the thin film surface of the substrate during vapor phase growth or During the process of moving the film-forming substrate into the front chamber after growth, it may peel off and fall due to slight vibrations, and adhere to the film-forming surface of the substrate, significantly degrading the quality of the film-forming substrate.

Therefore, it is desirable to remove and clean the attached reaction products after each vapor phase growth, but this requires a great deal of effort to clean and disassemble and assemble the reaction chamber for cleaning, and during cleaning, Since vapor phase growth cannot be performed, productivity decreases.

Therefore, the current situation is that cleaning is conventionally performed every 5 to 10 times of vapor phase growth.

[Problem to be solved by the invention] However, with the frequency of cleaning as described above, reaction products adhere to the reaction products adhering to the reaction chamber, and later peel off and fall onto the substrate surface, resulting in defective products. This inevitably increases the number of substrates on which the film is to be deposited and reduces the yield.

In view of this situation, the inventor of this invention has conducted extensive research and found that
It was found that reaction products deposited on already deposited reaction products are easily peeled off, whereas reaction products deposited during one vapor phase growth hardly peel off after only one step. .

Therefore, this invention was made based on such knowledge, and maintains productivity equal to or higher than conventional ones.
The present invention provides a horizontal vapor phase growth apparatus with improved yield compared to the conventional method.

[Means to solve the problem]

That is, the present invention comprises a reaction chamber to which a vapor phase growth gas introduction pipe is connected on one side, a holding table on which a substrate on which a thin film is to be formed by vapor phase growth is placed in the reaction chamber, and In the horizontal vapor phase growth apparatus, the front chamber is provided with a front chamber that is connected to the other side and is provided with a front chamber for exchanging the substrate, and a transfer device that moves horizontally between the front chamber and a holding table of the reaction chamber. and the reaction chamber, a shielding mechanism is provided for blocking the front chamber and the reaction chamber when the transport device is evacuated to the front chamber, and a cylinder connected to the vapor growth gas introduction pipe is provided. A flow channel having the shape of a shape is disposed in the reaction chamber, and the flow channel has at least an upper part of an end on the front chamber side as a removable movable part, and a bottom part on the front chamber side corresponding to the movable part is connected to the holding table. The installation part and the
The movable part is transported to the front chamber together with the substrate by the transport device every time vapor phase growth is performed, and is replaceable.

[Effect]

Therefore, the movable part can be replaced with a new, cleaned movable part at the same time as the substrate is replaced after each vapor-phase growth without interrupting the vapor-phase growth, and even if reaction products adhere to the movable part, the movable part can be replaced with a new one. The reaction product attached to the movable part can be prevented from peeling off by attaching it only once.

〔Example〕

Hereinafter, one embodiment of the present invention will be described based on FIGS. 1 to 4.

A horizontal vapor growth apparatus 1 includes a reaction chamber 2 in which vapor growth is performed, a vapor growth gas introduction pipe 3 connected to one side of the reaction chamber 2, and a vapor growth gas introduction pipe 3 that performs vapor growth in the reaction chamber 2. A holding table 4 on which a substrate P on which a thin film is to be formed is placed, a front chamber 5 which is connected to the other side of the reaction chamber 2 and in which the substrate P is exchanged, and a holding table between the front chamber 5 and the reaction chamber 2. A transport device 6 is provided between the front chamber 5 and the reaction chamber 2, and the transport device 6 horizontally moves between the front chamber 5 and the reaction chamber 2 when the transport device 6 is retracted to the front chamber 5.
and a cylindrical flow channel 8 disposed within the reaction chamber 2 and continuous with the vapor phase growth gas introduction pipe 3.

The reaction chamber 2 is formed using quartz glass or the like, and one side is closed with a flange 20, and a gas introduction pipe 3 is connected to the flange 20 passing through the flange 20. A discharge pipe 21 is provided in series. Further, an RF coil (not shown) is wound around the outer periphery of the reaction chamber 2.

The holding base 4 is made of carbon,
As shown in FIGS. 3 and 4, a substrate P is placed on the holding table 4 via a ring-shaped tray 9 that is removably fitted onto the holding table 4. As shown in FIGS. The tray 9 is transported by a transport device 6, and the width of the tray 9 is made wider than the width of the holding table 4, and lower forks 66 of the transport device 6, which will be described later, are inserted into the lower sides of both sides of the tray 9. possible.

Further, the holding table 4 and the tray 9 are formed so as to be inclined backward upward from the front part to the rear part, so that the vapor phase growth gas is distributed over the substrate P placed on the holding table 4 at an average concentration. flows. In addition, when the means for raising the temperature of the substrate P is heat conduction accompanying induction heating or resistance heating of the holding table 4, the top surface of the holding table 4 is placed on the tray so that the bottom surface of the substrate P is in contact with the top surface of the holding table 4. It is desirable to form it so that it is slightly higher than the upper surface of 9.

The front chamber 5 is provided with an opening/closing door 50 for loading and unloading the substrate P.

The conveying device 6 includes a guide tube 61 connected to a surface of the front chamber 5 facing the reaction chamber 2 via a bellows portion 60 so as to be swingable in the vertical direction, and an inner tube that slides inside the guide tube 61. a magnet 62; an external magnet 63 movably provided along the outer periphery of the guide cylinder 61;
a guide rod 64 whose rear end is connected to the internal magnet 62;
It consists of an upper fork 65 and a lower fork 66 provided at the tip of the guide rod 64.

The upper fork 65 connects the movable part 80 of the flow channel 8, which will be described later, and the lower fork 66 connects the tray 9.
and the substrate P are transported to the front chamber 5 and the reaction chamber 2, respectively.As the external magnet 63 moves along the guide tube 61, the internal magnet 62 is moved by the magnetic attraction force of the external magnet 63, and the substrate P is transported. Move the device 6 horizontally.

The shielding mechanism 7 is composed of, for example, a gate valve, and is connected to an upper fork 65 and a lower fork 6 of the conveying device 6.
6 is retreating to the front chamber 5, the front chamber 5 and the reaction chamber 2 are shut off, and when the upper fork 65 and the lower fork 66 of the transfer device 6 are in the reaction chamber 2, they are open.

The flow channel 8 has at least the upper part of the end on the side of the front chamber as a removable movable part 80, and the bottom part on the side of the front chamber corresponding to the movable part 80 as the installation part 81 of the holding table 4. The portion other than the movable portion 80 constitutes a fixed portion 82 with respect to the reaction chamber 2 and the vapor phase growth gas introduction pipe 3.

When the movable part 80 is placed on the upper edge of both side walls of the installation part 81 of the fixed part 82, the fixed part 82
It is desirable that the positioning part 8 of the movable part 80 be closely connected to the edge of the movable part 80 and the upper edge of the fixed part 82 by forming protrusions, recesses, etc. between the movable part 80 and the upper edge of the fixed part 82.
It is preferable to form 3.

Moreover, the movable part 80 is transported to the front chamber 5 by the upper fork 65 together with the tray 9 and the substrate P transported by the lower fork 66 of the transport device 6, and a new movable part is cleaned for each vapor phase growth. is exchanged with

In order to perform vapor phase growth using the horizontal vapor phase growth apparatus 1 configured as described above, first, the transfer device 6 is moved backward (to the left in FIG. 1), and the upper fork 65 and the lower fork 66 are moved into the front chamber 5. The tray 9 and the unprocessed substrate P are placed on the lower fork 66 from the opening/closing door 50, and a new cleaned movable part 80 is placed on the upper fork 65.

Next, while opening the shielding mechanism 7, the upper fork 6
5 and the lower fork 66 upward, and the internal magnet 62 at the rear end of the guide bar 64 is moved by the external magnet 63 to move the conveying device 24 forward (as shown in FIG. right direction),
When the upper fork 65 and the lower fork 66 advance to a predetermined position in the reaction chamber 2, the guide tube 61 is moved down, the upper fork 65 and the lower fork 66 are lowered, and the tray 9 is placed in the installation part 81 of the flow channel 8. Set the holding table 4 at a predetermined position, place the substrate P on the holding table 4, and move the movable part 80 placed on the upper fork 32 to the fixed part 82 of the flow channel 8. Set so as to cover the opening above the installation part 81.

Then, the transport device 24 is retreated, the upper fork 65 and the lower fork 66 are retreated into the front chamber 5, the shielding mechanism 7 is closed, and the vapor growth gas is introduced into the flow channel 8 from the vapor growth gas introduction pipe 3. Along with flowing
An RF coil (not shown) is energized to hold the substrate P at a predetermined temperature via the holding table 4. As a result, the vapor growth gas flowing through the flow channel 8 is thermally decomposed on the substrate P, and reaction products are deposited on the substrate P to form a thin film on the substrate P.

When the vapor phase growth in the reaction chamber 2 is completed, the introduction of the vapor phase growth gas is stopped and the reaction chamber 2 is closed with purge gas.
The residual vapor growth gas in the interior is exhausted through the exhaust gas exhaust pipe 21, the shielding mechanism 7 is opened, the conveying device 24 is advanced, and the upper fork 65 and the lower fork 66 are removed from the tray 9 and the lower part of the movable part 80, respectively. , move the guide tube 26 slightly upward, lift the tray 9 and the movable part 80 with the upper fork 65 and the lower fork 66, and remove the holding table 4 and the fixed part 82 of the flow channel 8.
, the transport device 24 is moved backward, and the upper fork 65 and the lower fork 66 are retracted into the front chamber 5.
The movable part 80, the tray 9, and the processed substrate P are taken out from the opening/closing door 50.

Next, a new unprocessed substrate P and tray 9 are placed on the lower fork 66, a new clean movable part 80 is placed on the upper fork 65, and vapor phase growth is performed again in the same manner as described above. .

As shown in the above embodiment, by placing the movable part 80 that covers the upper part of the substrate P at the tip of the transfer device 6, when the substrate P is moved, the movable part 80 that covers the top of the substrate P can be removed. Even if the reaction product peels off and falls, it is blocked by the movable part 80, so that it can be prevented from falling onto the substrate P.

In addition, during vapor phase growth, reaction products also adhere to the underside of the movable part 80. However, since the movable part 80 is detachable for each vapor phase growth, it can be replaced with a new, clean part for each vapor phase growth. Since adhesion is limited to one vapor phase growth, the reaction products adhering to the movable part 80 can be prevented from peeling off or falling off.

Moreover, since the substrate P and the movable part 80 can be replaced at the same time, cleaning work becomes easier, and there is no need to interrupt the vapor phase growth due to cleaning work in the reaction chamber or flow channel, resulting in an increase in production that is equivalent to or better than before. It is possible to maintain the properties and improve the yield compared to the conventional method.

Note that as the holding table and tray on which the substrate P is placed, for example, those having the structure shown in FIG. 5 can also be used. That is, the installation part 81 of the flow channel 8
The cylindrical holding table 4 is tilted and arranged at a predetermined position in the reaction chamber, and the holding table 4 is placed on the bottom surface of the tray 9.
A recess 9a having a diameter larger than the diameter of the recess 9a is formed.
is placed on top of the holding table 4 and the tray 9 is set. Further, a shallow recess 9b having approximately the same diameter as the substrate P is formed on the upper surface of the tray 9, and the substrate P is placed in the recess 9b.
By placing , the substrate P is prevented from slipping. Furthermore, the lower fork 66 for conveying the tray 9 is provided with an inclination substantially similar to that of the tray 9, and has an anti-slip protrusion 66a protruding from its tip.

[Effect of idea]

As explained above, the horizontal vapor phase growth apparatus of the present invention includes a reaction chamber to which a vapor phase growth gas introduction pipe is connected on one side, and a substrate on which a thin film is formed by vapor phase growth in the reaction chamber. a holding table for placing the substrate, a front chamber connected to the other side of the reaction chamber for exchanging substrates, and a transfer device for horizontally moving between the front chamber and the holding table of the reaction chamber. A shielding mechanism is provided between the reaction chamber and the reaction chamber to shut off the front chamber and the reaction chamber when the transport device is evacuated to the front chamber. The flow channel has at least the upper part of the end on the front chamber side as a removable movable part, and the bottom part on the front chamber side corresponding to the movable part as a mounting part for the holding stand, and the flow channel Since the movable part is transported with the substrate to the front chamber by a transport device and can be replaced, it can be replaced with a new clean movable part for each vapor phase growth, and there is no possibility of reaction products adhering to the inner surface of the movable part. can be attached only in one vapor phase growth, and it is possible to prevent the reaction product attached to the movable part from peeling off or falling.

Furthermore, since the substrate and the movable parts can be replaced at the same time, cleaning work becomes easier, and there is no need to interrupt vapor phase growth due to cleaning work in the reaction chamber or flow channel, increasing productivity to the same level or higher than before. The yield can be improved compared to the conventional method.

[Brief explanation of the drawing]

1 to 4 show an embodiment of the present invention, and FIG. 1 is a cross-sectional side view of a horizontal vapor phase growth apparatus;
FIG. 2 is a plan view of the main parts showing the tip of the transport device;
FIG. 3 is a sectional front view showing the holding part, FIG. 4 is a sectional side view, and FIG. 5 is a front view showing another embodiment of the holding part. 1...Horizontal vapor phase growth apparatus, 2...Reaction chamber, 3...
...Vapour-phase growth gas introduction pipe, 4...Holding table, 5...Pre-chamber, 6...Transport device, 60...Bellows part, 61...
...Guide tube, 64...Guide rod, 65...Upper fork, 66...Lower fork, 7...Shielding mechanism, 8...
Flow channel, 80...movable part, 81...installation part, 82...fixed part, 9...tray, P...substrate.

Claims (1)

[Scope of utility model registration request] A reaction chamber to which a vapor growth gas introduction pipe is connected on one side, a holding table on which a substrate on which a thin film is to be formed by vapor growth in the reaction chamber is placed, and a holding table connected to the other side of the reaction chamber. , a horizontal vapor phase growth apparatus comprising a front chamber in which the substrate is exchanged, and a transport device that horizontally moves between the front chamber and a holding table in the reaction chamber,
A shielding mechanism is provided between the front chamber and the reaction chamber to block the front chamber and the reaction chamber when the transport device is retreating to the front chamber, and a shielding mechanism is provided in the vapor growth gas introduction pipe. A continuous cylindrical flow channel is disposed within the reaction chamber, and the flow channel has at least an upper portion of the end portion on the front chamber side as a removable movable portion, and a bottom portion on the front chamber side corresponding to the movable portion. Horizontal vapor phase growth, characterized in that the movable section is configured as an installation section of the holding table, and the movable section is conveyed to the front chamber by the conveyance device together with the substrate every time the vapor phase growth is performed, and is replaceable. Device.