JPS61204942A - Shower washing method for semiconductor integrated circuit device - Google Patents
Shower washing method for semiconductor integrated circuit deviceInfo
- Publication number
- JPS61204942A JPS61204942A JP4546485A JP4546485A JPS61204942A JP S61204942 A JPS61204942 A JP S61204942A JP 4546485 A JP4546485 A JP 4546485A JP 4546485 A JP4546485 A JP 4546485A JP S61204942 A JPS61204942 A JP S61204942A
- Authority
- JP
- Japan
- Prior art keywords
- water
- semiconductor wafer
- water tank
- shower
- tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体集積回路装置のシャワー水洗方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a shower washing method for semiconductor integrated circuit devices.
第２図に示すように、半導体集積回路の生産工程の酸化
膜エツチング装置において、エツチング槽１内でエツチ
ングｉｆαにて処理された半導体ウェハー２を水洗する
必要がある。３はウエノ１−２を搬送するためのキャリ
アである。As shown in FIG. 2, in an oxide film etching apparatus used in the production process of semiconductor integrated circuits, it is necessary to wash a semiconductor wafer 2 treated with etching ifα in an etching bath 1 with water. 3 is a carrier for transporting the ueno 1-2.
従来、半導体集積回路装置のシャワー水洗方法は、ウェ
ハー２を水槽４に入れたと同時に、水槽４内の純水５を
すべて排水した後、シャワー６より純水を水槽４内に給
水してウェハー２をシャワー水洗し、再び給水を止めて
純水をすべて排水する反復動作によって、常に水槽内の
純水をきれいな状態でウェハーに付着した洗浄液（Ｈ２
Ｃｈ−アンモニア水）又はエツチング液（フッ酸など）
を洗浄していた。Conventionally, in the shower washing method for semiconductor integrated circuit devices, the wafer 2 is placed in the water tank 4, all of the pure water 5 in the water tank 4 is drained, and then pure water is supplied from the shower 6 into the water tank 4 to wash the wafer 2. By repeatedly washing the wafer with water in the shower, stopping the water supply again, and draining all the pure water, the cleaning liquid (H2
Ch-ammonia water) or etching solution (hydrofluoric acid, etc.)
was being washed.
上述した従来の水洗方法は水槽内の純水を常にきれいな
状態で水洗することになっているので、水槽内の純水を
すべて排水するという動作をくり返さなければならない
。In the conventional washing method described above, the purified water in the tank is always washed with clean water, so the operation of draining all the pure water in the tank must be repeated.
しかし、この方法では純水をすべて排水する時に、排水
される汚れた純水がウェハーの表面に接触し、純水内に
漂っている不純物（ゴミ）をウニバーの表面に付けてし
まうという欠点があった。However, this method has the disadvantage that when all the pure water is drained, the dirty pure water that is drained comes into contact with the surface of the wafer, and impurities (dust) floating in the pure water are attached to the surface of the Univer. there were.
本発明は前記問題点を解消するもので、不純物が半導体
ウェハーの表面に付着（２ないようにし／ζ半導体集積
回路装置のシャワー水洗方法を提供するものである。The present invention solves the above-mentioned problems and provides a method for washing a semiconductor integrated circuit device with shower water to prevent impurities from adhering to the surface of a semiconductor wafer.
本発明は水槽内で半導体ウェハーを純水にてシャワー水
洗する方法において、水槽内に純水を給排水するととも
に給排水用を調整して常時半導体ウェハーを水槽内に充
填される純水の水面下に浸漬させた状態で半導体ウェハ
ーのジャワ−水洗を行うことを！１−１ｉ′徴とする半
導体集積回路装置のシャワー水洗方法である。The present invention is a method of shower washing a semiconductor wafer with pure water in a water tank, in which pure water is supplied and drained into the water tank and the water supply and drainage are adjusted so that the semiconductor wafer is always kept under the surface of the pure water filled in the water tank. Wash semiconductor wafers with Java water while immersed! 1-1i' A shower washing method for a semiconductor integrated circuit device.
以下、本発明の一実施例を図によって説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第１図において、キャリア３にセットされた半導体ウェ
ハー２は酸化膜エツチング装置のエツチング槽１内でエ
ツチング液１αにて処理され、水槽４内に移し替えられ
る。In FIG. 1, a semiconductor wafer 2 set on a carrier 3 is treated with an etching solution 1α in an etching tank 1 of an oxide film etching apparatus, and then transferred into a water tank 4.
水槽４内では、その水面値を、半導体ウェハー２が純水
の水面下に没する高さ位置Ｈに保ち、水槽４内に純水５
をシャワー６により給水し、満杯になったとき、水槽４
より汚れ／こ純水を、水面４ａが高さ位置１■になるま
で排水し、高さ位置Ｊ（に水面４ａがなったとき、排水
を止めて、再び給水する。In the water tank 4, the water level is maintained at a height H at which the semiconductor wafer 2 is submerged under the water surface of the pure water.
water is supplied by the shower 6, and when it is full, the water tank 4
Drain the dirt/purified water until the water surface 4a reaches the height 1. When the water surface 4a reaches the height J (), stop draining and supply water again.
この給水と排水を繰り返して′４″′導体ウェハー２を
洗浄ｒる。By repeating this water supply and drainage, the conductor wafer 2'4'' is cleaned.
尚、実施例では給水と排水とを交互に繰り返しでンヤワ
ー水洗を行ったが、水槽４内の水面４αを高さ位置■（
以−トの範囲に保し、給水と排水とを同時に行ってンヤ
ワー水洗するようにしても良い。In addition, in the example, water washing was performed by repeating water supply and drainage alternately, but the water surface 4α in the water tank 4 was set at the height position
It is also possible to keep the water within the range below, supply water and drain water at the same time, and wash the water with water.
表面に付着（７たゴミの数が５０個以下のンリコン基板
を水槽内で洗浄したところ、従来の水洗方法では約１０
０００個付着していたのであるが、本発明によれば、ゴ
ミ数が約１０００個に激減した。When cleaning a non-recon board with less than 50 particles attached to the surface in a water tank, it was found that the conventional water washing method removed about 10 particles.
However, according to the present invention, the number of dust particles was drastically reduced to about 1,000 pieces.
以上説明したように本発明はウェハーを水面から出ない
ようにして純水の給排水を行ってシャワー水洗するため
、汚れた純水の内に漂っているゴミを減少することがで
き、半導体ウェハーの洗浄度を向上できる効果がある。As explained above, in the present invention, since the wafer is supplied and drained with pure water and washed with shower water while keeping the wafer from coming out of the water surface, it is possible to reduce the amount of dust floating in the dirty pure water, thereby reducing the amount of debris floating in the dirty pure water. It has the effect of improving cleaning efficiency.
第１図は本発明の−・実施例を示す構成図、第２図は従
来実施されていた水洗方法を示す構成図である。
２・・半導体ウェハー ４・・・水槽特許出願人
日本電気株式会社
ｍ＝すFIG. 1 is a block diagram showing an embodiment of the present invention, and FIG. 2 is a block diagram showing a conventional water washing method. 2. Semiconductor wafer 4. Water tank patent applicant
NEC Corporation m=su
Claims (1)
するシャワー水洗方法において、水槽に純水を給排水す
るとともに給排水量を調整して常時半導体ウェハーを水
槽内に充填される純水の水面下に浸漬させた状態で半導
体ウェハーのシャワー水洗を行うことを特徴とする半導
体集積回路装置のシャワー水洗方法。(1) In the shower washing method in which semiconductor wafers are shower-washed with pure water in a water tank, pure water is supplied to and drained from the water tank and the amount of water supply and drainage is adjusted so that the semiconductor wafer is always placed under the water surface of the pure water that is filled in the water tank. 1. A method for washing a semiconductor integrated circuit device with shower water, the method comprising washing a semiconductor wafer with water while the semiconductor wafer is immersed in water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4546485A JPS61204942A (en) | 1985-03-07 | 1985-03-07 | Shower washing method for semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4546485A JPS61204942A (en) | 1985-03-07 | 1985-03-07 | Shower washing method for semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61204942A true JPS61204942A (en) | 1986-09-11 |
Family
ID=12720090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4546485A Pending JPS61204942A (en) | 1985-03-07 | 1985-03-07 | Shower washing method for semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61204942A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5271871A (en) * | 1975-12-11 | 1977-06-15 | Nec Corp | Washing apparatus |
| JPS5444472A (en) * | 1977-09-14 | 1979-04-07 | Nippon Telegr & Teleph Corp <Ntt> | Cleaning unit of semiconductor substrate |
-
1985
- 1985-03-07 JP JP4546485A patent/JPS61204942A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5271871A (en) * | 1975-12-11 | 1977-06-15 | Nec Corp | Washing apparatus |
| JPS5444472A (en) * | 1977-09-14 | 1979-04-07 | Nippon Telegr & Teleph Corp <Ntt> | Cleaning unit of semiconductor substrate |
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