JPS61204935A - Exposure equipment for reflection-reduction projection - Google Patents

Exposure equipment for reflection-reduction projection

Info

Publication number
JPS61204935A
JPS61204935A JP60045447A JP4544785A JPS61204935A JP S61204935 A JPS61204935 A JP S61204935A JP 60045447 A JP60045447 A JP 60045447A JP 4544785 A JP4544785 A JP 4544785A JP S61204935 A JPS61204935 A JP S61204935A
Authority
JP
Japan
Prior art keywords
mask
wafer
reflection
reduction projection
concave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60045447A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP60045447A priority Critical patent/JPS61204935A/en
Publication of JPS61204935A publication Critical patent/JPS61204935A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To enable the realization of high resolution without absorption even using far ultraviolet rays forming an image without aberration by projecting to reduce a mask pattern on a wafer using at least two concave mirrors. CONSTITUTION:A mask pattern is projected to be reduced on a wafer using two or more concave mirrors. For example, the pattern of a mask 4 placed at the focal point of the first concave mirror 1 is forms a reduced image on the wafer 5 placed at the focal point of the second concave mirror 2. A reflection mirror 3 is used only in the case of changing an optical pass. This enables to achieve the resolution of 1mu or less with the ease of manufacturing the mask.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は集積回路の製作時に用いられる露光装置の構造
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of an exposure apparatus used in the production of integrated circuits.

〔従来の技術〕[Conventional technology]

従来、反射投影露光装置は１対１の等倍で、且つ、リン
グフィールドシステムが用いられるのが通例であった。Conventionally, a reflection projection exposure apparatus has a 1:1 ratio of 1:1, and a ring field system has generally been used.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

下の解像が困難、マスク製作が困難等の問題点があった
。There were problems such as difficulty in lower resolution and difficulty in making masks.

〔問題点を解決するための手段〕[Means for solving problems]

本発明はかかる従来技術の問題点を解決するために、反
射投影露光装置において、少くとも２つの凹面鏡により
マスク図形をウェーハ上に縮小投影することを特徴とす
る。In order to solve the problems of the prior art, the present invention is characterized in that, in a reflection projection exposure apparatus, a mask figure is reduced and projected onto a wafer using at least two concave mirrors.

〔作用〕[Effect]

２つの放物面鏡を組み合わせることによりサブフィール
ドシステムによりマスクとウェーハ平面間で倍率をもち
、且つ、各々の焦点位置にマスクとウェーハを設置する
ことにより、放物面（楕円）鏡の焦点では収差がないと
の原則により、収差のない像が結像されると共に、遠紫
外線を用いても吸収がなく、高解像が実現できる作用が
ある。By combining two parabolic mirrors, the subfield system provides magnification between the mask and wafer planes, and by placing the mask and wafer at their respective focal positions, the focal point of the parabolic (elliptical) mirror has magnification. Due to the principle of no aberrations, an aberration-free image is formed, and there is no absorption even when far ultraviolet rays are used, making it possible to achieve high resolution.

〔実施例〕〔Example〕

以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.

第１図は本発明の一実施例を示す反射縮小投影光学系の
模式図である。FIG. 1 is a schematic diagram of a catoptric reduction projection optical system showing an embodiment of the present invention.

たマスク４の図形は、第２の凹面鏡２の焦点位置に設置
されたウェーハ５の表面に縮小されて結像することを基
本としており、反射鏡５は光路を変更する場合にのみ用
いるにすぎない。The shape of the mask 4 is basically reduced and imaged on the surface of the wafer 5 placed at the focal position of the second concave mirror 2, and the reflecting mirror 5 is used only when changing the optical path. do not have.

〔発明の効果〕〔Effect of the invention〕

本発明によると、１ミクロン以下の解像がマスク製作も
容易に、達成することができる効果がある。According to the present invention, there is an effect that a resolution of 1 micron or less can be achieved with ease of mask production.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例を示す反射縮小投影光学系の
模式図である。 １・・・・・・第１の凹面鏡 ２・・・・・・第２の凹面鏡 ３・・・・・・反射鏡 ４・・・・・・マスク ５・・・・・・ウェーハ 以　　上FIG. 1 is a schematic diagram of a catoptric reduction projection optical system showing an embodiment of the present invention. 1...First concave mirror 2...Second concave mirror 3...Reflector 4...Mask 5...Wafer or more

Claims (1)

【特許請求の範囲】[Claims] 少くとも２つの凹面鏡によりマスク図形をウェーハ上に
縮小投影することを特徴とする反射縮小投影露光装置。A reflective reduction projection exposure apparatus characterized in that a mask figure is reduced and projected onto a wafer using at least two concave mirrors.
JP60045447A 1985-03-07 1985-03-07 Exposure equipment for reflection-reduction projection Pending JPS61204935A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60045447A JPS61204935A (en) 1985-03-07 1985-03-07 Exposure equipment for reflection-reduction projection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60045447A JPS61204935A (en) 1985-03-07 1985-03-07 Exposure equipment for reflection-reduction projection

Publications (1)

Publication Number Publication Date
JPS61204935A true JPS61204935A (en) 1986-09-11

Family

ID=12719587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60045447A Pending JPS61204935A (en) 1985-03-07 1985-03-07 Exposure equipment for reflection-reduction projection

Country Status (1)

Country Link
JP (1) JPS61204935A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126924A (en) * 1980-03-11 1981-10-05 Oak Seisakusho:Kk Forming device for picture
JPS6129815A (en) * 1984-07-23 1986-02-10 Nippon Kogaku Kk <Nikon> Reflex reduction projecting optical system
JPS61203419A (en) * 1985-03-06 1986-09-09 Nippon Kogaku Kk <Nikon> Optical system for reflecting and reducing projection

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126924A (en) * 1980-03-11 1981-10-05 Oak Seisakusho:Kk Forming device for picture
JPS6129815A (en) * 1984-07-23 1986-02-10 Nippon Kogaku Kk <Nikon> Reflex reduction projecting optical system
JPS61203419A (en) * 1985-03-06 1986-09-09 Nippon Kogaku Kk <Nikon> Optical system for reflecting and reducing projection

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