JPS61201482A - Semiconductor optical position detector - Google Patents
Semiconductor optical position detectorInfo
- Publication number
- JPS61201482A JPS61201482A JP60042159A JP4215985A JPS61201482A JP S61201482 A JPS61201482 A JP S61201482A JP 60042159 A JP60042159 A JP 60042159A JP 4215985 A JP4215985 A JP 4215985A JP S61201482 A JPS61201482 A JP S61201482A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- layer
- tin oxide
- resistance layer
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 230000003287 optical effect Effects 0.000 title claims 3
- 239000000463 material Substances 0.000 claims abstract description 14
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 238000001771 vacuum deposition Methods 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 241001070941 Castanea Species 0.000 description 1
- 235000014036 Castanea Nutrition 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、光起電力層の材料にアモルファスシリコンを
使用した半導体装置検出器の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a semiconductor device detector using amorphous silicon as a material for a photovoltaic layer.
（従来の技術）
本出願人は、先に特願昭５７年１６１４７０号に係る半
導体装置検出器を提案した。(Prior Art) The present applicant previously proposed a semiconductor device detector according to Japanese Patent Application No. 161470 of 1982.
この半導体装置検出器は、アモルファスシリコンを素材
とする光起電力層を備え、この光起電力層の一方または
双方の面に抵抗層を形成するとともに、該抵抗層に集電
々極を配設した構成をもつ。This semiconductor device detector is equipped with a photovoltaic layer made of amorphous silicon, a resistive layer is formed on one or both surfaces of the photovoltaic layer, and a current collecting electrode is provided on the resistive layer. It has a structure.
（発明が解決しようとする問題点）
上記先願に係る半導体装置検出器の抵抗層は、スパッタ
リング法あるいは真空蒸着法等の製法によって形成され
、その材料としてはＩＴＯ（インジウム−スズ−酸化物
）が使用されている。(Problems to be Solved by the Invention) The resistance layer of the semiconductor device detector according to the above-mentioned prior application is formed by a manufacturing method such as a sputtering method or a vacuum evaporation method, and its material is ITO (indium-tin-oxide). is used.
ところで、この種の検出器の検出感度を高めるには上記
抵抗層の抵抗値を高くすることが望ましいが、上記ＩＴ
Ｏを抵抗層の材料として用いた場合、安定して得られる
シート抵抗は数十０７口であり、数１００Ω／口以上の
シート抵抗を再現性よく得ることは困難であった。Incidentally, in order to increase the detection sensitivity of this type of detector, it is desirable to increase the resistance value of the resistive layer.
When O is used as the material for the resistance layer, the sheet resistance that can be stably obtained is several tens of ohms, and it has been difficult to obtain a sheet resistance of several 100 Ω/or more with good reproducibility.
すなわち第７図は、スパッタリング法によってＩＴＯか
らなる膜厚約１００ＯＡの抵抗層を形成する場合の酸素
分圧とシート抵抗値との関係を基板温度をパラメータと
して例示しているが、再現性よく抵抗層を得るにはシー
ト抵抗値の変化が緩やかな酸素分圧下で抵抗層を形成す
る必要があることから数１０００／口以上のシート抵抗
を得ることは困難であった。In other words, FIG. 7 illustrates the relationship between the oxygen partial pressure and the sheet resistance value using the substrate temperature as a parameter when forming a resistive layer made of ITO with a thickness of about 100 OA by sputtering. In order to obtain a resistance layer, it is necessary to form the resistance layer under an oxygen partial pressure where the sheet resistance value changes gradually, so it has been difficult to obtain a sheet resistance of several thousand or more.
なおシート抵抗を高くするには、膜厚を薄くすればよく
、たとえば上記膜厚（１００ＯＡ）を１／１０以下にす
れば数百０／口のシート抵抗が得られる。In order to increase the sheet resistance, it is sufficient to reduce the film thickness. For example, by reducing the above film thickness (100 OA) to 1/10 or less, a sheet resistance of several hundred OA/mouth can be obtained.
しかしこの方法は製造技術上、再現性がきわめて悪くな
ることから実用性に欠ける。However, this method is impractical due to extremely low reproducibility due to manufacturing technology.
（問題点を解決するための手段）
かかる従来の問題点を解決するため、本発明では、アモ
ルファスシリコンからなる光起電力層の一方又は双方の
面に配設される抵抗層を酸化スズ（Ｓｎ０２）を主体と
する材料で形成している。(Means for Solving the Problems) In order to solve these conventional problems, in the present invention, the resistance layer disposed on one or both surfaces of the photovoltaic layer made of amorphous silicon is made of tin oxide (SnO2). ) is mainly made of materials.
（作用）
上記構成の本発明によれば、抵抗層のシート抵抗が大き
くなる。(Function) According to the present invention having the above configuration, the sheet resistance of the resistance layer increases.
（実施例）
以下、本発明の実施例を添付図面を参照して詳細に説明
する。(Embodiments) Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
第１図（ａ）は本発明に係る半導体装置検出器の一実施
例を示す平面図、同図（ｂ） 、 （Ｃ）は各々同図（
ａ）のＡ −Ａ’線、Ｂ −Ｂ’線による断面図である
。FIG. 1(a) is a plan view showing an embodiment of a semiconductor device detector according to the present invention, and FIG. 1(b) and FIG. 1(C) are respectively (
It is a sectional view taken along the line A-A' and the line B-B' in a).
この実施例に係る半導体装置検出器はガラス等からなる
基板１上に酸化スズ（Ｓｎｏｗ）を主材料とする抵抗層
２（透明導電膜）がスパッタ法もしくは真空蒸着法によ
って形成されている。そして、この抵抗層２の上面に光
起電力層３が形成され、さらに該層３の上面に前記抵抗
層２と同様の材料からなる抵抗層４が同様の方法によっ
て形成されている。In the semiconductor device detector according to this embodiment, a resistive layer 2 (transparent conductive film) mainly made of tin oxide (Snow) is formed on a substrate 1 made of glass or the like by sputtering or vacuum evaporation. A photovoltaic layer 3 is formed on the upper surface of this resistive layer 2, and a resistive layer 4 made of the same material as the resistive layer 2 is further formed on the upper surface of this layer 3 by the same method.
上記光起電力層３は３層構造を有し、図示されていない
が、上層、中層および下層が各々Ｐ型アモルファスシリ
コン、ｉ型アモルファスシリコンおよびｎｆｉアモルフ
ァスシリコンで形成されている。なお、これらの層はＣ
ＶＤ法等によって形成される。The photovoltaic layer 3 has a three-layer structure, and although not shown, an upper layer, a middle layer, and a lower layer are formed of P-type amorphous silicon, i-type amorphous silicon, and NFI amorphous silicon, respectively. Note that these layers are C
It is formed by a VD method or the like.
また上記抵抗層２の両端部には棒状をなした一対のＸ方
向集電々極５ａ、５ｂが対向配置され、同様番こ抵抗層
４の両端部には一対のｙ方向集電々極５ａ、５ｂが対向
配置されている。Furthermore, a pair of rod-shaped X-direction current collector electrodes 5a, 5b are disposed facing each other at both ends of the resistance layer 2, and similarly, a pair of y-direction current collector electrodes 5a, 5b are arranged at both ends of the resistive layer 4. are placed facing each other.
この実施例に係る位置検出器の等価回路は第３図に示す
ように表わされる。すなわち光照射位置７においては抵
抗層２，４間に電流源８および理想ダイオード９が形成
され、また受光面を除く抵抗層２，４間には抵抗１０と
接合容量１１が形成される。そして抵抗層２，４は各々
分布抵抗１２゜１４で構成される。The equivalent circuit of the position detector according to this embodiment is shown in FIG. That is, at the light irradiation position 7, a current source 8 and an ideal diode 9 are formed between the resistance layers 2 and 4, and a resistance 10 and a junction capacitance 11 are formed between the resistance layers 2 and 4 except for the light receiving surface. The resistance layers 2 and 4 each have a distributed resistance of 12° and 14°.
以下、この実施例の作用を説明する。The operation of this embodiment will be explained below.
いま第４図（ａ） 、 （ｂ） 、 （Ｃ）に示すよう
に上記半導体装置検出器に光ビームＡが入射すると、そ
の入射位置Ｐに光生成電流が発生する。このとき抵抗層
２においては入射位置Ｐと電極５ａ 、５ｂ間の抵抗’
ＸＩ ｌ ’Ｘ２によって上記電流が分割され、ま
た抵抗層４においては位置Ｐと電極５ａ 、５ｂ間の抵
抗ｒ）１１ １ ｒＹ２によって上記電流が分割され
るので、電極５ａ、５ｂから電流■Ｘｉ ｖ ＩＸ２
が、また電極５ａ 、５ｂ から電流工）１１ ｅ エ
フ２が各々取出される。Now, as shown in FIGS. 4(a), 4(b), and 4(c), when the light beam A is incident on the semiconductor device detector, a photogenerated current is generated at the incident position P. At this time, in the resistance layer 2, the resistance ' between the incident position P and the electrodes 5a and 5b is
The current is divided by XI l ' IX2
However, electric currents 11e and 2 are taken out from the electrodes 5a and 5b, respectively.
上記各分割電流ＩＸＩ ｅ ’ｘ２ ＊ Ｉ７１ ｐ
工ｙ２は、通常第５図に例示するような信号処理回路に
入力される。Each of the above divided currents IXI e 'x2 * I71 p
The signal y2 is normally input to a signal processing circuit as illustrated in FIG.
この処理回路は上記各電流が入力されるプリアンプ１３
〜１６と、電流和Ｉｘｌ＋Ｉｘ２およびＸｙ１＋■、２
を得る加算器１７および１８と、電流差Ｉｘ１−１ｘ
、およびＩ、１−Ｉ、を得る減算器１９および２０と、
加算器１７と減算器１９の各出力の比および加算器１８
と減算器２０の各出力の比を得る除算器２１および２２
とから構成され、除算器２１および２２から下式αンに
示すＸ方向の光入射位置信号Ｐｘおよび下式（２）！こ
示すｙ方向の光入射位置信号Ｐ、が各々出力される。This processing circuit includes a preamplifier 13 to which each of the above-mentioned currents is input.
~16, and the current sum Ixl+Ix2 and Xy1+■,2
Adders 17 and 18 obtain the current difference Ix1-1x
, and subtractors 19 and 20 for obtaining I, 1-I,
Ratio of each output of adder 17 and subtracter 19 and adder 18
Dividers 21 and 22 obtain the ratio of each output of the subtracter 20 and
From the dividers 21 and 22, a light incident position signal Px in the X direction shown in the following equation α and the following equation (2)! A light incident position signal P in the y direction is outputted.
なお、この処理回路によれば、入射光の強度およびその
変化に影響されない位置信号を得ることができる。Note that, according to this processing circuit, it is possible to obtain a position signal that is not affected by the intensity of incident light and its changes.
ここで、Ｘ方向のみの位置検出に着目し、抵抗層２にお
ける電極５ａと５ｂ間の抵抗をｒ、電極５ａと５ｂ間の
距離をり、電極５ａおよび５ｂに接続される各負荷抵抗
（アンプ１３．１４の入力抵抗）をＲとすると、第６図
に示す等価回路が得られる。Here, focusing on position detection only in the X direction, the resistance between electrodes 5a and 5b in resistance layer 2 is r, the distance between electrodes 5a and 5b is 13.14 input resistance) is R, an equivalent circuit shown in FIG. 6 is obtained.
この等価回路によれば、キルヒホッフの分法側に基づい
て工Ｘ １ ｐ ■Ｘ ２が各々ただし、ρ：抵抗層２
の抵抗率
と表わされ、このエエｌｙ工）（２を上式〇）に代入す
ると、
なる関係が得られる。同大（５）より位置信号Ｐｘの出
力を大きくするには、（Ｒ／ｒ）をできるだけ小さくす
ればよいことになる。なお、位置信号Ｐｙの出力につい
ても同様である。According to this equivalent circuit, based on Kirchhoff's division method, x 1 p ■
By substituting 2 into the above equation, the following relationship is obtained. In order to make the output of the position signal Px larger than the same value (5), (R/r) should be made as small as possible. Note that the same applies to the output of the position signal Py.
（Ｒ／ｒ）を小さくするには、Ｒを小さくするかｒを大
きくすればよいが、負荷抵抗Ｒは処理回路の制約上むや
みに小さくすることができない。In order to reduce (R/r), R may be reduced or r may be increased, but the load resistance R cannot be reduced unnecessarily due to limitations of the processing circuit.
本実施例においては、抵抗層２，４を酸化スズを主体と
する材料で形成しであるので第五図に示す如く、抵抗１
２，４のシートを数百Ω／口〜数にΩ／口程度にするこ
とができる。っまりＩＴＯからなる従来の検出器の抵抗
層におけるシート抵抗（第７図参照）に比して、本実施
例の抵抗層２゜４のそれは格段に大きい値を示す。した
がって本実施例によれば上記（Ｒ／ｒ）の値を低下させ
て位置検出信号の出方を飛躍的に増大させることができ
、これに伴ってＳ／Ｎも向上する。In this embodiment, since the resistance layers 2 and 4 are formed of a material mainly composed of tin oxide, the resistance 1 is as shown in FIG.
Two or four sheets can be made to have a resistance of several hundred ohms/hole to several ohms/hole. Compared to the sheet resistance of the resistance layer of a conventional detector made entirely of ITO (see FIG. 7), the resistance layer 2.4 of this embodiment exhibits a much larger value. Therefore, according to this embodiment, the output of the position detection signal can be dramatically increased by lowering the value of (R/r), and the S/N is also improved accordingly.
第８図は上記実施例の半導体装置検出器の出力特性を例
示している。同図において、破線は光ビームの照射位置
を、また実線はこの検出器で検出された位置を各々示し
ている。FIG. 8 illustrates the output characteristics of the semiconductor device detector of the above embodiment. In the figure, the broken line indicates the irradiation position of the light beam, and the solid line indicates the position detected by the detector.
なお、１００％の酸化スズを用いて抵抗層２゜４を形成
すると、その抵抗値が無限大ξなるので、該抵抗層の材
料としては酸化スズに適量の不純物、たとえばアンチモ
ンを混入したものが使用される。Note that if the resistance layer 2゜4 is formed using 100% tin oxide, its resistance value will be infinitely large. Therefore, the material for the resistance layer is tin oxide mixed with an appropriate amount of impurity, such as antimony. used.
上記実施例では、抵抗層を光起電力層３の双方の面に配
した構成の検出器を示したが、本発明は光起電力層の一
方の面のみに抵抗層を形成する構造の検出器にも当然適
用することができ、この場合、この抵抗層にｘ、ｙ方向
ζこついての集電々極５ａ、ｓｂ、６ａｔ６ｂが配設さ
れ、カつ光起電力層の他方の面に共通電極が設けられる
。In the above embodiment, a detector having a structure in which a resistive layer is disposed on both sides of the photovoltaic layer 3 is shown, but the present invention detects a structure in which a resistive layer is formed only on one side of the photovoltaic layer. Naturally, it can also be applied to a photovoltaic device, and in this case, current collector electrodes 5a, sb, 6at 6b are arranged on this resistance layer in the Electrodes are provided.
また本発明は１次元の検出器にも有効に適用しつる。な
お、実施例における抵抗層２は透明にする必要はないが
、この抵抗層２を透明番こすれば、基板１側からの光入
射位置をも検出できることになる。Further, the present invention can be effectively applied to a one-dimensional detector. Although the resistive layer 2 in the embodiment does not need to be transparent, if the resistive layer 2 is rubbed with a transparent cloth, the position of light incidence from the substrate 1 side can also be detected.
（発明の効果）
以上説明したように、本発明に係る半導体装置検出器は
抵抗層を酸化スズを主体とする材料で形成しているので
、そのシート抵抗が従来に比して格段に大きく、これに
より出力の増大とＳ／Ｎの向上を図ることができる。(Effects of the Invention) As explained above, in the semiconductor device detector according to the present invention, since the resistance layer is formed of a material mainly containing tin oxide, its sheet resistance is significantly higher than that of the conventional one. This makes it possible to increase output and improve S/N.
第１図は本発明に係る半導体装置検出器の一実施例を示
し、同図（ａ）はその平面図、同図（ｂ）および同図（
Ｃ）は各々同図（ａ）のＡ−Ａ’線およびＢ−Ｂ’線に
よる断面図、第２図は酸化スズを主材料とする抵抗層の
成膜条件とシート抵抗との関係を例示したグラフ、第３
図は第１図に示す実施例の等価回路図、第４図は第１図
に示す実施例の作用を説明する図、第ゴ図は２次元半導
体装置検出器の出力信号を処理する回路の一例を示した
ブロック図、第６図はＸ方向検出時の作用を示す等価回
路図、第７図は、ＩＴＯからなる抵抗層の成膜条件とシ
ート抵抗との関係を例示したグラフ、第８図は第１図に
示す実施例の出力特性を例示したグラフである。
１・・・基板、２，４・・・抵抗層、３・・・光起電力
層、５ ａ 、 ５ ｂ 、 ６ ａ 、 ５ ｂ ＝
−集電々極。
第２図
５ｎＯ２ｅｒｒ履漣１杯主と表面柩机
酸案分瓜
第３図
す。
第５図
第６図
第７図
酸栗分圧FIG. 1 shows an embodiment of a semiconductor device detector according to the present invention, and FIG. 1(a) is a plan view thereof, FIG. 1(b) and FIG.
C) is a cross-sectional view taken along line AA' and line B-B' in Figure (a), respectively, and Figure 2 illustrates the relationship between sheet resistance and film formation conditions for a resistance layer whose main material is tin oxide. Graph, 3rd
The figure is an equivalent circuit diagram of the embodiment shown in FIG. 1, FIG. 4 is a diagram explaining the operation of the embodiment shown in FIG. 1, and FIG. A block diagram showing an example, FIG. 6 is an equivalent circuit diagram showing the action during detection in the X direction, FIG. The figure is a graph illustrating the output characteristics of the embodiment shown in FIG. 1. DESCRIPTION OF SYMBOLS 1... Substrate, 2,4... Resistance layer, 3... Photovoltaic layer, 5a, 5b, 6a, 5b=
- Current collector electrode. Figure 2: 5nO2 err: 1 cup of main and surface acid: Figure 3: Figure 5 Figure 6 Figure 7 Acid chestnut partial pressure
Claims (1)
該光起電力層の一方あるいは双方の面に抵抗層を形成す
るとともに、該抵抗層に集電々極を配設してなる半導体
光位置検出器において、上記抵抗層を酸化スズ（ＳｎＯ
＿２）を主体とする材料で形成したことを特徴とする半
導体光位置検出器。It has a photovoltaic layer made of amorphous silicon,
In a semiconductor optical position detector in which a resistive layer is formed on one or both surfaces of the photovoltaic layer and a current collecting electrode is disposed on the resistive layer, the resistive layer is made of tin oxide (SnO).
A semiconductor optical position detector characterized in that it is formed of a material mainly consisting of _2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4215985A JPH0770754B2 (en) | 1985-03-04 | 1985-03-04 | Method for forming resistance layer in semiconductor optical position detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4215985A JPH0770754B2 (en) | 1985-03-04 | 1985-03-04 | Method for forming resistance layer in semiconductor optical position detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61201482A true JPS61201482A (en) | 1986-09-06 |
| JPH0770754B2 JPH0770754B2 (en) | 1995-07-31 |
Family
ID=12628168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4215985A Expired - Fee Related JPH0770754B2 (en) | 1985-03-04 | 1985-03-04 | Method for forming resistance layer in semiconductor optical position detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0770754B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991006122A1 (en) * | 1989-10-11 | 1991-05-02 | The University Of New Mexico | High resolution position sensor |
| JPH04313277A (en) * | 1991-04-11 | 1992-11-05 | Sanyo Electric Co Ltd | Light position detector |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5950579A (en) * | 1982-09-16 | 1984-03-23 | Komatsu Ltd | Semiconductor optical position detector |
-
1985
- 1985-03-04 JP JP4215985A patent/JPH0770754B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5950579A (en) * | 1982-09-16 | 1984-03-23 | Komatsu Ltd | Semiconductor optical position detector |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991006122A1 (en) * | 1989-10-11 | 1991-05-02 | The University Of New Mexico | High resolution position sensor |
| JPH04313277A (en) * | 1991-04-11 | 1992-11-05 | Sanyo Electric Co Ltd | Light position detector |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0770754B2 (en) | 1995-07-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |