JPS61192112A - Surface acoustic wave device - Google Patents

Surface acoustic wave device

Info

Publication number
JPS61192112A
JPS61192112A JP3196385A JP3196385A JPS61192112A JP S61192112 A JPS61192112 A JP S61192112A JP 3196385 A JP3196385 A JP 3196385A JP 3196385 A JP3196385 A JP 3196385A JP S61192112 A JPS61192112 A JP S61192112A
Authority
JP
Japan
Prior art keywords
electrode
distance
acoustic wave
surface acoustic
crossdigital
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3196385A
Other languages
Japanese (ja)
Other versions
JP2659178B2 (en
Inventor
Taiji Yamamoto
泰司 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP3196385A priority Critical patent/JP2659178B2/en
Publication of JPS61192112A publication Critical patent/JPS61192112A/en
Application granted granted Critical
Publication of JP2659178B2 publication Critical patent/JP2659178B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To obtain the title device with a wide specific band, flat band, small size and low insertion loss by selecting the distance between an exciting crossdigital electrode and a reception crossdigital electrode and between a grating reflector and both the said electrodes respectively to a specific value. CONSTITUTION:The exciting crossdigital electrode 43 and the reception crossdigital electrode 42 are arranged with a distance l1[=(2n+1)L/4<l1<(n+1)L/2; n+0,1,2...] and the distance between the grating reflectors 44, 45 and both the said electrodes is arranged with an internal l2 and l3[=(4m+1)L/8<l2,l3<(4m+7)L/8; m=0,1,2...], where L is the period of electrodes 42, 43. Thus, plural resonance modes exist and the broad pass band is attained. Since the energy is confined between the reflectors 44 and 45, low loss is attained. Further, miniaturization is attained in terms of structure.

Description

【発明の詳細な説明】 本発明は弾性表面波装置に関する。[Detailed description of the invention] The present invention relates to a surface acoustic wave device.

従来の弾性表面波デバイスの中には、グレーティング反
射器と励振用および受信用弾性表面波変換器と金剛いた
ものがあり、主に共振子発振子として使用される。第1
図は従来の弾性表面波装置の構成の一例を示す。この例
では、2つのグレーティング反射器14および15の間
で定在波が最大に生じ、かつ、その定住波を最も効率よ
く受信および励振するように交叉指状電極12および1
3金配置している。この場合、伝送特性1cfl鋭い共
振特性が現れ、通常、2端子対共振器として使用される
。交叉指状電極およびグレーティング反射器の配置条件
としては、交叉指状電極の電極周期tLとすると、受信
用交叉指状電極12と励振用交叉指状電極13との距離
taならびに受信用および励振用交叉指状電極12お工
び13とグレーn’、 m、 m’=0.1.2− )
に選んテイル(WI(Haydl、etal、、197
6 Ultrason、8ymp、Proc、*0.1
.2・・・・・・)としている例もある (小山田、吉
川;日本音響学会誌、33.NO,IO,P2S5(1
977)参照)。
Some conventional surface acoustic wave devices include grating reflectors and surface acoustic wave transducers for excitation and reception, and are mainly used as resonator oscillators. 1st
The figure shows an example of the configuration of a conventional surface acoustic wave device. In this example, the interdigital electrodes 12 and 1 are arranged so that a maximum standing wave is generated between the two grating reflectors 14 and 15, and the standing waves are most efficiently received and excited.
3 gold is placed. In this case, a transmission characteristic 1 cfl exhibits a sharp resonance characteristic, and is usually used as a two-terminal pair resonator. The arrangement conditions of the interdigital electrodes and the grating reflector are as follows: where the electrode period of the interdigital electrodes is tL, the distance ta between the interdigital receiving electrode 12 and the excitation interdigital electrode 13, and the distance ta between the receiving interdigital electrode 12 and the excitation interdigital electrode 13; Cross-finger electrode 12 and gray n', m, m' = 0.1.2-)
The selected tale (WI (Haydl, etal, 197
6 Ultrason, 8ymp, Proc, *0.1
.. 2...) (Oyamada, Yoshikawa; Journal of the Acoustical Society of Japan, 33.NO, IO, P2S5 (1
977)).

第1図に示す工うな従来の弾性表面波装置の伝送特性は
第2図および第3図に示すよりに鋭いピーク金持つ共振
特性であるため、フィルタとしては相当に狭帯域(3d
Bの比帯域が0.5%以下)になってしまう欠点がある
。また、単峰性の通過帯域しか賽現出来ないため、フィ
ルタとしての適用範囲が非常に限定されるという欠点も
める。
The transmission characteristics of the conventional surface acoustic wave device shown in Fig. 1 are resonance characteristics with sharper peaks than those shown in Figs.
There is a drawback that the fractional band of B is 0.5% or less. Furthermore, since only a single-peak passband can be realized, the range of application as a filter is extremely limited.

また、第2図に示すような伝送特性の共振器を複数個接
続してフィルタを構成する例があるが(L、A、Co1
dren etal; Proc、 IEEE、 vo
l、67゜p147.1979参照)、フィルタ形状が
複雑になり小形化および低価格化が困難であるという欠
点がある。
Furthermore, there is an example in which a filter is constructed by connecting a plurality of resonators with transmission characteristics as shown in Fig. 2 (L, A, Co1
dren etal; Proc, IEEE, vo
1, 67°, p. 147, 1979), the filter has a complicated shape, making it difficult to downsize and reduce the cost.

本発明の目的は上述の欠点を除去し従来に比べ比帯域が
広くかつ帯域内が平坦な小形で低挿入損失の弾性表面披
裂rILを提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks and to provide a compact elastic surface arytenoid rIL with a wider specific band and a flat band, and a low insertion loss, compared to the conventional one.

本発明の弾性表面波装置は、複数個のグレーティング反
射器と該グレーティング反射器の間に配置された少なく
とも1つの励振用交叉指状電極および受信用交叉指状電
極とが圧電基板上に形成され前記交叉指状電極の電極周
期がLでおる弾性表面波装置において、前記励振用交叉
指状電極と前され、前記グレーティング反射器と前記励
振用交叉指状電極および受信用交叉指状電極とが距離!
24m+1 およびt @ (=−L (l z、 j B <4!
!−!−!−L ; my0、1.2・・・・・・)だ
け隔てて配置されている。
In the surface acoustic wave device of the present invention, a plurality of grating reflectors and at least one excitation interdigital electrode and reception interdigital electrode disposed between the grating reflectors are formed on a piezoelectric substrate. In the surface acoustic wave device in which the electrode period of the interdigital electrode is L, the excitation interdigital electrode is arranged in front of the grating reflector, the excitation interdigital electrode and the reception interdigital electrode. distance!
24m+1 and t @ (=-L (l z, j B <4!
! -! -! -L; my0, 1.2...).

次に図面を参照して本発明について詳細に説明する。第
4図は本発明の一賽施例を示す平面図である。本実施例
では、受信用および励振用交叉指状電極42および43
の電極周期ILとすると、交叉指状電極42および43
間の距離L1’to、42L。
Next, the present invention will be explained in detail with reference to the drawings. FIG. 4 is a plan view showing one embodiment of the present invention. In this embodiment, interdigital electrodes 42 and 43 for reception and excitation are used.
With an electrode period IL of , the interdigital electrodes 42 and 43
The distance between L1'to, 42L.

グレーティング反射器44と交叉指状電極42の間の距
離t2 およびグレーティング反射器45と交叉指状電
極43との間の距離1st−それぞれ0.7 OLにな
るように設定しである。
The distance t2 between the grating reflector 44 and the interdigital electrode 42 and the distance 1st between the grating reflector 45 and the interdigital electrode 43 are set to be 0.7 OL, respectively.

このように距離条件を設定すると、共振モードが複数存
在し、通過帯域の広帯域化が可能となる。
When the distance condition is set in this way, a plurality of resonance modes exist, and it becomes possible to widen the passband.

第5図は本実施例の伝送特性を示す、従来の特性に比べ
ると、帯域内特性は単峰の特性から平坦な特性とな、j
り、  3dB  帯域幅が2倍以上に改善された。ま
た、グレーティング反射器44および45間にエネルギ
ーを閉じ込めているため低損失である。さらに、構造的
にも従来の弾性表面波装置と比べて大きさや形状には有
意差がなく、小形化が可能である。以上のように、本発
明には、比較的狭帯域で帯域内が平坦な特性の賽現およ
び小形化および低損失化を達成できるという効果がある
Figure 5 shows the transmission characteristics of this embodiment. Compared to the conventional characteristics, the in-band characteristics change from a single peak to a flat characteristic.
The 3dB bandwidth was more than doubled. Furthermore, energy is confined between the grating reflectors 44 and 45, resulting in low loss. Furthermore, structurally, there is no significant difference in size or shape compared to conventional surface acoustic wave devices, and miniaturization is possible. As described above, the present invention has the advantage of achieving relatively narrow and flat characteristics in the band, as well as miniaturization and low loss.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の弾性表面波装置の一例を示す平面図、第
2図および第3図は従来の弾性表面波装置の伝送特性を
示す図、第4図は本発明の一冥施例を示す平面図および
!!5図は本発明による弾性表面波装置の伝送特性を示
す図である。 図において、11・・・・・・圧電基板、12.13・
・・・・・交叉指状電極、14.15・・・・・・グレ
ーティング反射器、41・・・・・・圧電基板、42.
43・・・・・・交叉指状電極、44.45・・・・・
・グレーティング反射器。 V−1別 子2′TiJ 冷4個
FIG. 1 is a plan view showing an example of a conventional surface acoustic wave device, FIGS. 2 and 3 are diagrams showing the transmission characteristics of a conventional surface acoustic wave device, and FIG. 4 is a plan view showing an example of a conventional surface acoustic wave device. Floor plan shown and! ! FIG. 5 is a diagram showing the transmission characteristics of the surface acoustic wave device according to the present invention. In the figure, 11...piezoelectric substrate, 12.13...
. . . Cross-finger electrode, 14. 15 . . . Grating reflector, 41 . . . Piezoelectric substrate, 42.
43...Cross-finger electrode, 44.45...
・Grating reflector. V-1 Besshi 2'TiJ cold 4 pieces

Claims (1)

【特許請求の範囲】[Claims] 複数個のグレーティング反射器と、該グレーティング反
射器の間に配置された少なくとも1つの励振用交叉指状
電極および受信用交叉指状電極とが圧電基板上に形成さ
れ前記交叉指状電極の電極周期がLである弾性表面波装
置において、前記励振用交叉指状電極と前記受信用交叉
指状電極とが距離をl_1(=(2n+1)/4L<l
_1<(n+1)/2L:n=0、1、2・・・・・・
)だけ隔てて配置され、前記グレーティング反射器と前
記励振用交叉指状電極および前記受信用交叉指状電極と
がそれぞれ距離をl_2およびl_3(=(4m+1)
/8L<l_2、l_3<(4m+7)/8L:m=0
、1、2・・・・・・)だけ隔てて配置されたことを特
徴とする弾性表面波装置。
A plurality of grating reflectors and at least one excitation interdigital electrode and reception interdigital electrode disposed between the grating reflectors are formed on a piezoelectric substrate, and the electrode period of the interdigital electrode is In the surface acoustic wave device where L is L, the distance between the excitation interdigital electrode and the reception interdigital electrode is l_1(=(2n+1)/4L<l
_1<(n+1)/2L: n=0, 1, 2...
), and the grating reflector, the excitation interdigital electrode, and the reception interdigital electrode are arranged at distances l_2 and l_3 (=(4m+1)), respectively.
/8L<l_2, l_3<(4m+7)/8L:m=0
, 1, 2...).
JP3196385A 1985-02-20 1985-02-20 Surface acoustic wave device Expired - Lifetime JP2659178B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3196385A JP2659178B2 (en) 1985-02-20 1985-02-20 Surface acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3196385A JP2659178B2 (en) 1985-02-20 1985-02-20 Surface acoustic wave device

Publications (2)

Publication Number Publication Date
JPS61192112A true JPS61192112A (en) 1986-08-26
JP2659178B2 JP2659178B2 (en) 1997-09-30

Family

ID=12345604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3196385A Expired - Lifetime JP2659178B2 (en) 1985-02-20 1985-02-20 Surface acoustic wave device

Country Status (1)

Country Link
JP (1) JP2659178B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283309A (en) * 1987-05-15 1988-11-21 Toyo Commun Equip Co Ltd Two-port saw resonator
JPS6428023U (en) * 1987-08-11 1989-02-17
JPS6482706A (en) * 1987-09-25 1989-03-28 Hitachi Ltd Surface acoustic wave narrow-band filter
JPH01170210A (en) * 1987-12-25 1989-07-05 Toshiba Corp Surface acoustic wave resonator
JPH02164121A (en) * 1988-12-16 1990-06-25 Murata Mfg Co Ltd Surface acoustic wave device
JPH0522062U (en) * 1991-08-31 1993-03-23 太陽誘電株式会社 Transfer agent container for pin transfer
JPH0685605A (en) * 1992-07-17 1994-03-25 Nec Corp Surface acoustic wave filter
WO1996028886A1 (en) * 1995-03-15 1996-09-19 Japan Energy Corporation Surface acoustic wave filter
US6317015B1 (en) 1995-10-13 2001-11-13 Fujitsu Limited Surface acoustic wave device using a leaky surface acoustic wave with an optimized cut angle of a piezoelectric substrate

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283309A (en) * 1987-05-15 1988-11-21 Toyo Commun Equip Co Ltd Two-port saw resonator
JPS6428023U (en) * 1987-08-11 1989-02-17
JPS6482706A (en) * 1987-09-25 1989-03-28 Hitachi Ltd Surface acoustic wave narrow-band filter
JPH01170210A (en) * 1987-12-25 1989-07-05 Toshiba Corp Surface acoustic wave resonator
JPH02164121A (en) * 1988-12-16 1990-06-25 Murata Mfg Co Ltd Surface acoustic wave device
JPH0522062U (en) * 1991-08-31 1993-03-23 太陽誘電株式会社 Transfer agent container for pin transfer
JPH0685605A (en) * 1992-07-17 1994-03-25 Nec Corp Surface acoustic wave filter
WO1996028886A1 (en) * 1995-03-15 1996-09-19 Japan Energy Corporation Surface acoustic wave filter
US5877661A (en) * 1995-03-15 1999-03-02 Kinseki, Limited Surface acoustic wave filter with optimally sized gaps between transducers
US6317015B1 (en) 1995-10-13 2001-11-13 Fujitsu Limited Surface acoustic wave device using a leaky surface acoustic wave with an optimized cut angle of a piezoelectric substrate

Also Published As

Publication number Publication date
JP2659178B2 (en) 1997-09-30

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