JPS6119166A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS6119166A JPS6119166A JP59139924A JP13992484A JPS6119166A JP S6119166 A JPS6119166 A JP S6119166A JP 59139924 A JP59139924 A JP 59139924A JP 13992484 A JP13992484 A JP 13992484A JP S6119166 A JPS6119166 A JP S6119166A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- solid
- substrate
- concentration
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000003384 imaging method Methods 0.000 claims description 11
- 239000011159 matrix material Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 230000000779 depleting effect Effects 0.000 abstract 2
- 230000002265 prevention Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は固体撮像装置に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to a solid-state imaging device.
従来例の構成とその問題点 第１図はＰ−８ｉ基板１上に形成されたＭＯＳ。Conventional configuration and its problems FIG. 1 shows a MOS formed on a P-8i substrate 1.
ＣＣＤ 、ＣＰＤ等の固体撮像装置のホトダイオード２
を示している。通常高濃度の炉を罪いた帥接合がホトダ
イオードとして利用されている。しかし、固体撮像装置
が小型化、高密度化されるに従って、上述したホトダイ
オードではその分光感度、量子効率において限界があシ
、小形高密度撮像装置でのホトダイオードとして充分な
感度を得る事ができなくなシ、実用上問題であった。Photodiode 2 of solid-state imaging devices such as CCD and CPD
It shows. A high-concentration reactor junction is usually used as a photodiode. However, as solid-state imaging devices become smaller and more dense, the photodiodes mentioned above have limits in their spectral sensitivity and quantum efficiency, making it impossible to obtain sufficient sensitivity as a photodiode in small, high-density imaging devices. However, this was a practical problem.
発明の目的
本発明は上記欠点に鑑み、小形高密度固体撮像装置に適
用できる高密度で暗電流の少い固体撮像装置の提供を目
的としている。OBJECTS OF THE INVENTION In view of the above drawbacks, the present invention aims to provide a solid-state imaging device with high density and low dark current, which can be applied to small-sized high-density solid-state imaging devices.
発明の構成
本発明はｍ行ｎ列の行列状に配列された光電変換素子部
を備え、前記光電変換素子部が基板と反対導電型の濃度
の異なる２種類以上の不純物層で形成されている事を特
徴とする固体撮像装置である。Structure of the Invention The present invention includes a photoelectric conversion element section arranged in a matrix of m rows and n columns, and the photoelectric conversion element section is formed of two or more types of impurity layers having conductivity types opposite to that of the substrate and having different concentrations. This solid-state imaging device is characterized by:
実施例の説明
以下本発明の実施例について、図面を参照しながら説明
する。第２図は本発明の一実施例を示すフォトダイオー
ドの構造模式図である。フォトダイオードは２種類の不
純物層１１および１２で形成されている。不純物層１２
はフォトダイオードに印加される所定の電圧において空
乏化されるような低い濃度で形成されている。一方、不
純物層１１は上述の印加電圧においては空乏化されない
高い濃度の不純物層で形成される。不純物層１２の拡散
長は必要な所定の拡散長を得るために大きくする。これ
は不純物層１２の領域での光電変換効率を可能な限シ大
きくするためである。またこの領域は不純物層が空乏化
されているため量子効率の増大が可能となる。高濃度不
純物層１１はなるべく拡散長を短くして入射光に対する
青感度を増大させ、また不純物層１２の空乏層が表面ま
で達して暗電流を増大するのを防ぐ役目も担っている。DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 2 is a schematic structural diagram of a photodiode showing an embodiment of the present invention. The photodiode is formed of two types of impurity layers 11 and 12. Impurity layer 12
is formed with such a low concentration that it becomes depleted at a predetermined voltage applied to the photodiode. On the other hand, the impurity layer 11 is formed of a high concentration impurity layer that is not depleted at the above applied voltage. The diffusion length of the impurity layer 12 is increased to obtain a necessary predetermined diffusion length. This is to increase the photoelectric conversion efficiency in the region of the impurity layer 12 as much as possible. Furthermore, since the impurity layer is depleted in this region, it is possible to increase the quantum efficiency. The highly concentrated impurity layer 11 shortens the diffusion length as much as possible to increase the blue sensitivity to incident light, and also serves to prevent the depletion layer of the impurity layer 12 from reaching the surface and increasing dark current.
尚、第２図で１３はｐ形基板である。In addition, 13 in FIG. 2 is a p-type substrate.
以上述べたように本発明のフォトダイオード構造は従来
構造に比べて、入射光に対する青感度を初めとして各波
長の感度を極めて大きくし、また暗電流の発生を極力少
さくすることができる。As described above, compared to the conventional structure, the photodiode structure of the present invention can greatly increase the sensitivity to each wavelength including the blue sensitivity to incident light, and can minimize the generation of dark current.
発明の効果
以上の様に本発明は小形高密度化した固体撮像装置にお
いて、光感度を大きくできかつ暗電流を小さくできるこ
とになり、その実用的効果は大なるものである。Effects of the Invention As described above, the present invention can increase the photosensitivity and reduce the dark current in a compact, high-density solid-state imaging device, and has great practical effects.
第１図は従来の固体撮像装置の光電変換部を示す模式図
、第２図は本発明の一実施例を示す構造模式図である。
１１・・・・・・高濃度不純物層、１２・・・・・・低
濃度不純物層、１３・・・・・−ｐ形基板。FIG. 1 is a schematic diagram showing a photoelectric conversion section of a conventional solid-state imaging device, and FIG. 2 is a schematic structural diagram showing an embodiment of the present invention. 11...High concentration impurity layer, 12...Low concentration impurity layer, 13...-P type substrate.
Claims (2)
備えるとともに、前記光電変換素子部が基板と反対導電
型の濃度の異なる２種類以上の不純物層で形成されてい
ることを特徴とする固体撮像装置(1) The photoelectric conversion element portion is provided with a photoelectric conversion element portion arranged in a matrix of m rows and n columns, and the photoelectric conversion element portion is formed of two or more types of impurity layers having conductivity types opposite to that of the substrate and having different concentrations. Characteristic solid-state imaging device
種類の不純物層が所定の印加電圧において空乏化するよ
うな不純物濃度で形成されていることを特徴とする特許
請求の範囲第１項記載の固体撮像装置(2) Claim 1, characterized in that at least one of the two or more types of impurity layers having different concentrations is formed with an impurity concentration such that it becomes depleted at a predetermined applied voltage. Solid-state imaging device described
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59139924A JPS6119166A (en) | 1984-07-05 | 1984-07-05 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59139924A JPS6119166A (en) | 1984-07-05 | 1984-07-05 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6119166A true JPS6119166A (en) | 1986-01-28 |
Family
ID=15256828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59139924A Pending JPS6119166A (en) | 1984-07-05 | 1984-07-05 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6119166A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62222667A (en) * | 1986-03-25 | 1987-09-30 | Sony Corp | Solid-state image pickup device |
| US8282098B2 (en) | 2006-09-06 | 2012-10-09 | Canon Kabushiki Kaisha | Sheet stacking apparatus and image forming apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5819080A (en) * | 1981-07-27 | 1983-02-03 | Sony Corp | Solid-state image sensor |
-
1984
- 1984-07-05 JP JP59139924A patent/JPS6119166A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5819080A (en) * | 1981-07-27 | 1983-02-03 | Sony Corp | Solid-state image sensor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62222667A (en) * | 1986-03-25 | 1987-09-30 | Sony Corp | Solid-state image pickup device |
| US8282098B2 (en) | 2006-09-06 | 2012-10-09 | Canon Kabushiki Kaisha | Sheet stacking apparatus and image forming apparatus |
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