JPS6118815B2 - - Google Patents

Info

Publication number
JPS6118815B2
JPS6118815B2 JP53086358A JP8635878A JPS6118815B2 JP S6118815 B2 JPS6118815 B2 JP S6118815B2 JP 53086358 A JP53086358 A JP 53086358A JP 8635878 A JP8635878 A JP 8635878A JP S6118815 B2 JPS6118815 B2 JP S6118815B2
Authority
JP
Japan
Prior art keywords
film
predetermined
pit
substrate
information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53086358A
Other languages
Japanese (ja)
Other versions
JPS5514512A (en
Inventor
Taiji Tsunoda
Takashi Nishio
Yoshiki Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP8635878A priority Critical patent/JPS5514512A/en
Publication of JPS5514512A publication Critical patent/JPS5514512A/en
Priority to US06/273,999 priority patent/US4408319A/en
Publication of JPS6118815B2 publication Critical patent/JPS6118815B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26Apparatus or processes specially adapted for the manufacture of record carriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Manufacturing Optical Record Carriers (AREA)

Description

【発明の詳細な説明】 本発明は情報記録板及びその製造方法に関し、
特にレーザ光や電子線等の走査ビームをその表面
に照射して情報の記録を行う記録板及びその製造
方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an information recording board and a method for manufacturing the same.
In particular, the present invention relates to a recording plate whose surface is irradiated with a scanning beam such as a laser beam or an electron beam to record information, and a method of manufacturing the same.

映像や音声情報をデイスク(円盤)状の記録媒
体に記録する方式としてビデオデイスクに例えば
光学的に記録する方式がある。この方法は、基板
となるガラス円盤に厚さ1000乃至1500Åのフオト
レジストを塗布し、このレジスト膜に微少な点に
集光したレーザビームを映像や音声情報に応じて
明滅させるいわゆるビツトバイビツト方式で照射
感光させ、しかる後にこれを現像して得られるピ
ツト(へこみ)の長さ及びその繰返し周期により
情報を記録するものである。
2. Description of the Related Art As a method for recording video and audio information on a disk-shaped recording medium, there is a method for optically recording video disks, for example. This method involves applying a photoresist with a thickness of 1000 to 1500 Å to a glass disk serving as a substrate, and irradiating this resist film with a laser beam focused on a minute point using the so-called bit-by-bit method, which blinks in response to video and audio information. Information is recorded based on the length of the pits (dents) obtained by exposure to light and subsequent development, and the repetition period thereof.

かかる方式では、フオトレジスト膜の段差をプ
ラスチツク板等に転写して読出すものであるか
ら、レジスト膜を基板に塗布する際に全面に亘つ
て均一性が要求される。当該均一性が失われると
再生信号のS/Nの劣化を招来する大きな原因と
なり好ましくないが、かかるレジスト膜をデイス
ク全面(大略300mmの直径)に亘り均一な厚さで
塗布することは困難である。
In this method, the steps of the photoresist film are transferred to a plastic plate or the like and read out, so uniformity is required over the entire surface when the resist film is applied to the substrate. Loss of such uniformity is undesirable as it is a major cause of deterioration of the S/N of the reproduced signal, but it is difficult to apply such a resist film to a uniform thickness over the entire surface of the disk (approximately 300 mm diameter). be.

従つて、かゝる欠点を除去すべく次の如き方法
が提案されている。すなわち基板の一主面上に選
択エツチング可能な例えばシリコン酸化膜を気相
成長等の方法により均一な厚さに形成し、しかる
後に当該酸化膜上にレーザビームにより溶融蒸発
可能なクローム膜を形成する。このようにして得
られたデスクク基板面上に所定情報により変調さ
れたレーザビームを走査することによりクローム
膜が情報に応じて溶融蒸発される。このクローム
膜をエツチングマスクとして下層のシリコン酸化
膜を選択エツチングし、しかる後にクローム膜を
除去することにより、情報に応じたピツトがシリ
コン酸化膜に形成される。
Therefore, the following methods have been proposed to eliminate such drawbacks. That is, a silicon oxide film that can be selectively etched is formed on one principal surface of the substrate to a uniform thickness by a method such as vapor phase growth, and then a chromium film that can be melted and evaporated with a laser beam is formed on the oxide film. do. By scanning the surface of the disk substrate thus obtained with a laser beam modulated according to predetermined information, the chrome film is melted and evaporated according to the information. By selectively etching the underlying silicon oxide film using this chrome film as an etching mask, and then removing the chrome film, pits corresponding to the information are formed in the silicon oxide film.

かかる方法においては、シリコン酸化膜は均一
に基板面上に被着形成されるものであるから、前
述の欠点は除去される。しかしながら、かかる方
法及び先述の方法においても、当該ピツトの大き
さは、記録情報に応じて作製されるべき正規の大
きさに比し大となり、正確な情報の記録ができな
い欠点がある。
In this method, the silicon oxide film is uniformly deposited on the substrate surface, so the above-mentioned drawbacks are eliminated. However, in this method and in the above-mentioned method as well, the size of the pit is larger than the normal size that should be produced according to the recorded information, and there is a drawback that accurate information cannot be recorded.

また、この様にして得られた基板すなわち記録
板はそのピツトの段差を例えばプラスチツク板等
に転写して複製されるが、シリコン酸化膜のピツ
トの内側面は基板面に対し実質的に垂直となつて
いるから、プラスチツク板への転写後の当該プラ
スチツク板の型離れが良好にならない欠点もあ
る。
Furthermore, the substrate thus obtained, that is, the recording plate, is reproduced by transferring the steps of the pits onto a plastic plate, etc., but the inner surface of the silicon oxide film pits is substantially perpendicular to the substrate surface. Because of this, there is also the drawback that the plastic plate does not release easily from the mold after being transferred to the plastic plate.

本発面の目的は正確な情報記録が可能でかつ転
写時の型離れが良好な情報記録板及びその製造方
法を提供することである。
An object of the present invention is to provide an information recording plate that allows accurate information recording and has good separation from the mold during transfer, and a method for manufacturing the same.

以下本発明につき図面を用いて説明する。 The present invention will be explained below with reference to the drawings.

第1図は本発明の1実施例を示す製造工程順の
各断面を示す図であり、aに示す如くガラス若し
くはプラスチツク基板1の1主面上に厚さ1000〜
2000Åの例えばシリコン酸化膜2を気相成長法等
により形成し、更にその上に例えばクローム膜3
を形成する。このクローム膜3を含む基板面上に
記録すべき所定情報により変調されたレーザビー
ムを照射してクローム膜3を溶融蒸発せしめてb
に示す如き構造を得る。しかる後にクローム膜3
をマスクとして例えばCF4等のプラズマ中におい
ていわゆるプラズマエツチングすることによりシ
リコン酸化膜2を選択的に除去し、そしてクロー
ム膜3を完全に除けば、cに示す様に情報に応じ
たピツト4が基板上に形成される。
FIG. 1 is a cross-sectional view showing one embodiment of the present invention in the order of the manufacturing process.
For example, a silicon oxide film 2 with a thickness of 2000 Å is formed by a vapor phase growth method, and then a chromium film 3, for example, is formed on it.
form. A laser beam modulated according to predetermined information to be recorded is irradiated onto the substrate surface including the chrome film 3 to melt and evaporate the chrome film 3.
The structure shown in is obtained. After that, chrome film 3
If the silicon oxide film 2 is selectively removed by so-called plasma etching in plasma such as CF 4 using the mask as a mask, and the chrome film 3 is completely removed, pits 4 according to the information are formed as shown in c. formed on a substrate.

しかしながら、このピツト4の形状は正規のピ
ツトよりも大きく形成されているのが普通である
から、同図dに示す如く、例えばリンガラス5を
気相成長法により基板1上に全面に被着形成させ
る。この場合において、リンガラスス層5はその
厚さがピツト4の内側壁及びその底面更はシリコ
ン酸化膜2の上面に亘つて大略一になされなけれ
ばならにいために、常圧下の気相成長法によら
ず、減圧下の気相成長法によれば上記目的は達成
される。こ場合の気圧としては例えば10Torr若
しくはそれ以下が望ましい。
However, since the shape of this pit 4 is normally formed larger than a regular pit, as shown in FIG. Let it form. In this case, since the thickness of the phosphor glass layer 5 must be approximately the same over the inner wall of the pit 4, its bottom surface, and the upper surface of the silicon oxide film 2, it is difficult to use the vapor phase growth method under normal pressure. However, the above object can be achieved by using the vapor phase growth method under reduced pressure. The atmospheric pressure in this case is preferably 10 Torr or less, for example.

ここで成長膜5はcのピツト4の大きさを正確
な大きさに補正するためのものであるから、その
厚さは厳密に制御されなければならないが、上述
の減圧下の気相成長方法によればそれが可能とな
る。尚、気相成長膜5としてはリンガラスに限ら
ず気相成長可能な物質を用いることができる。例
えば樹脂膜や金属膜が使用可能である。
Here, since the grown film 5 is for correcting the size of the pit 4 of c to an accurate size, its thickness must be strictly controlled. According to this, this is possible. Note that the vapor phase growth film 5 is not limited to phosphorus glass, and any material that can be vapor phase grown can be used. For example, a resin film or a metal film can be used.

また膜5はピツトの大きさを補正するものであ
るから、cのピツト4の少くとも内側面において
厚さの均一な膜を形成すれば足りるが、dに示す
如くピツトを含む基板1の1主面全面に亘り気相
成長膜を形成するのが製造上簡単であることは明
白である。
Further, since the film 5 is for correcting the size of the pit, it is sufficient to form a film with a uniform thickness on at least the inner surface of the pit 4 shown in c. It is obvious that forming a vapor phase growth film over the entire main surface is easy in terms of manufacturing.

更に本発明においては転写板の型離れを良好と
するために、eに示す如く、例えば液相状のポリ
イミド6を回転塗布等により面全体に形成すれ
ば、ピツト4内においては、液相状ポリイミド6
は塑性の粘度及び所定の表面張力を有する故に、
ピツト4の上端角部では膜厚が薄くなり、ピツト
4の底部平坦部において膜厚が最大となり、その
内側壁の上端縁から下端縁へ向つて連続して厚さ
が増大する如き形態で硬化することになる。従つ
てピツトの内周壁にはテーパが形成されることに
なつていわゆる転写時の型離れが容易となる。
Furthermore, in the present invention, in order to improve the release of the transfer plate from the mold, for example, if the liquid phase polyimide 6 is formed on the entire surface by spin coating, as shown in e, the liquid phase will remain in the pit 4. polyimide 6
has a plastic viscosity and a given surface tension, so
The film is cured in such a manner that the film thickness becomes thinner at the upper corner of the pit 4, reaches its maximum thickness at the flat bottom part of the pit 4, and increases continuously from the upper edge to the lower edge of the inner wall. I will do it. Therefore, the inner circumferential wall of the pit is tapered, making it easier to separate from the mold during so-called transfer.

尚、液相状の膜5の形成剤すなわち、硬化剤と
してポリイミドの他にポリイミドアミド、環状ゴ
ム系樹脂更にはテフロン(デユポン社)等を用い
ることができる。
In addition to polyimide, polyimide amide, cyclic rubber resin, Teflon (DuPont), etc. can be used as a forming agent, that is, a curing agent for the liquid phase film 5.

従つて、この様にして得られた基板は、記録面
上に厚さが均一にかつ正確に制御された膜を成長
させるものであるから、ピツト内側壁上にも均一
な厚さの膜が成長されもつてピツトの大きさの補
正が可能となる。また、成長膜上に液相状膜を被
着せしめて硬化させるものであるから、ピツト形
状の周縁部がテーパ形状を有することになつて、
転写時の型離れが容易となる。また当該基板から
電鋳板を作成後プラスチツク板を得る場合も同様
である。
Therefore, since the substrate obtained in this way allows a film with a uniform and precisely controlled thickness to grow on the recording surface, a film with a uniform thickness can also be grown on the inner wall of the pit. As it grows, it becomes possible to correct the size of the pit. In addition, since the liquid phase film is applied onto the grown film and cured, the peripheral edge of the pit shape has a tapered shape.
The mold can be easily removed during transfer. The same applies to the case where a plastic plate is obtained after producing an electroformed plate from the substrate.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図a〜dは本発明の実施例の製造工程順に
おける各断面図である。 主要部分の符号の説明、1……基板、2……シ
リコン酸化膜、4……ピツト、5……成長膜、6
……液相膜。
FIGS. 1A to 1D are cross-sectional views in the order of manufacturing steps of an embodiment of the present invention. Explanation of symbols of main parts, 1...substrate, 2...silicon oxide film, 4...pits, 5...grown film, 6
...Liquid phase membrane.

Claims (1)

【特許請求の範囲】 1 所定情報に応じて一主面に形成された複数の
ピツトを有する基板と、少くとも前記ピツトの
各々の内側面上に均一な厚さをもつて被着された
第1の膜と、前記第1の膜の上端縁から下端縁へ
向つて厚さが連続して増大するように前記第1の
膜上に被着された第2の膜とを有することを特徴
とする情報記録板。 2 所定情報に応じたピツトを基板の一主面上に
形成する工程と、前記一主面上に減圧下において
所定膜を気相成長させる工程と、所定の粘度及び
所定の表面張力を有する液相状の硬化剤を前記所
定膜の主面全体に塗布して前記ピツトの内側面の
前記所定膜上の上端縁から下端縁へ向つて厚さが
連続して増大する液相膜を形成後、硬化させる工
程とを含むことを特徴とする情報記録板の製造方
法。
[Scope of Claims] 1. A substrate having a plurality of pits formed on one main surface according to predetermined information, and a substrate having a uniform thickness on at least the inner surface of each of the pits. and a second film deposited on the first film such that the thickness thereof continuously increases from the upper edge to the lower edge of the first film. Information recording board. 2. A step of forming pits on one main surface of the substrate according to predetermined information, a step of vapor-phase growing a predetermined film on the one main surface under reduced pressure, and a step of forming a pit in accordance with predetermined information with a predetermined surface tension. After applying a phase curing agent to the entire main surface of the predetermined film to form a liquid phase film whose thickness increases continuously from the upper edge to the lower edge on the predetermined film on the inner surface of the pit; A method for manufacturing an information recording plate, comprising the steps of: , curing.
JP8635878A 1978-07-15 1978-07-15 Information recording plate and its manufacture Granted JPS5514512A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8635878A JPS5514512A (en) 1978-07-15 1978-07-15 Information recording plate and its manufacture
US06/273,999 US4408319A (en) 1978-07-15 1981-06-15 Optical information recording mother disc and method of producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8635878A JPS5514512A (en) 1978-07-15 1978-07-15 Information recording plate and its manufacture

Publications (2)

Publication Number Publication Date
JPS5514512A JPS5514512A (en) 1980-02-01
JPS6118815B2 true JPS6118815B2 (en) 1986-05-14

Family

ID=13884661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8635878A Granted JPS5514512A (en) 1978-07-15 1978-07-15 Information recording plate and its manufacture

Country Status (1)

Country Link
JP (1) JPS5514512A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6328614A (en) * 1986-07-22 1988-02-06 Kobe Steel Ltd Method for controlling slide of resin molding press
JPH0354895Y2 (en) * 1987-02-04 1991-12-05
JPH0438973Y2 (en) * 1987-12-26 1992-09-11

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6328614A (en) * 1986-07-22 1988-02-06 Kobe Steel Ltd Method for controlling slide of resin molding press
JPH0354895Y2 (en) * 1987-02-04 1991-12-05
JPH0438973Y2 (en) * 1987-12-26 1992-09-11

Also Published As

Publication number Publication date
JPS5514512A (en) 1980-02-01

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