JPS61187121U - - Google Patents
Info
- Publication number
- JPS61187121U JPS61187121U JP7006185U JP7006185U JPS61187121U JP S61187121 U JPS61187121 U JP S61187121U JP 7006185 U JP7006185 U JP 7006185U JP 7006185 U JP7006185 U JP 7006185U JP S61187121 U JPS61187121 U JP S61187121U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor switching
- drive circuit
- conductive
- terminal
- control power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Description
第1図は本考案の半導体スイツチング素子の駆
動回路の一実施例を示した構成図、第2図は本考
案の変形例を示した構成図、第3図は従来の半導
体スイツチング素子の駆動回路の構成図、第4図
第5図は従来のFETを用いた半導体スイツチン
グ素子の駆動回路図とその欠点の動作説明図であ
る。
1……ドライブ回路の電源、2,3……コンデ
ンサ、4……ホトカプラ、5……オンオフ2信号
出力回路、6A,8A……FET、7,9……電
流抑制抵抗、10B……ドライブ回路、11……
パワートランジスタ、12……誤通電防止抵抗。
FIG. 1 is a block diagram showing an embodiment of a drive circuit for a semiconductor switching device according to the present invention, FIG. 2 is a block diagram showing a modification of the present invention, and FIG. 3 is a conventional drive circuit for a semiconductor switching device. 4 and 5 are diagrams of a drive circuit for a semiconductor switching element using a conventional FET, and an operation explanation diagram of its drawbacks. 1... Drive circuit power supply, 2, 3... Capacitor, 4... Photocoupler, 5... On/off 2 signal output circuit, 6A, 8A... FET, 7, 9... Current suppression resistor, 10B... Drive circuit , 11...
Power transistor, 12... Resistor to prevent erroneous conduction.
Claims (1)
態に制御される半導体スイツチング素子の駆動回
路において、該半導体スイツチング素子のスイツ
チング指令入力の一方の端子は直流制御電源の中
間の電位に固定され、他方の端子は該直流制御電
源の正極側および負極側に接続された各電界効果
トランジスタの出力点に接続され、該出力点と該
負極間に誤通電防止のための抵抗器を接続したこ
とを特徴とする半導体スイツチング素子の駆動回
路。 In a drive circuit for a semiconductor switching element that is controlled to be conductive or non-conductive by a switching command, one terminal of the switching command input of the semiconductor switching element is fixed at an intermediate potential of the DC control power supply, and the other terminal is A semiconductor switching device connected to the output point of each field effect transistor connected to the positive and negative electrodes of a DC control power source, and characterized in that a resistor is connected between the output point and the negative electrode to prevent erroneous conduction. Element drive circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7006185U JPS61187121U (en) | 1985-05-14 | 1985-05-14 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7006185U JPS61187121U (en) | 1985-05-14 | 1985-05-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61187121U true JPS61187121U (en) | 1986-11-21 |
Family
ID=30606322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7006185U Pending JPS61187121U (en) | 1985-05-14 | 1985-05-14 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61187121U (en) |
-
1985
- 1985-05-14 JP JP7006185U patent/JPS61187121U/ja active Pending
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