JPS61185991A - Optical coupling device - Google Patents

Optical coupling device

Info

Publication number
JPS61185991A
JPS61185991A JP60025505A JP2550585A JPS61185991A JP S61185991 A JPS61185991 A JP S61185991A JP 60025505 A JP60025505 A JP 60025505A JP 2550585 A JP2550585 A JP 2550585A JP S61185991 A JPS61185991 A JP S61185991A
Authority
JP
Japan
Prior art keywords
groove
resin
optical fiber
etching
guide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60025505A
Other languages
Japanese (ja)
Inventor
Fusako Sakata
坂田 扶佐子
Mototsugu Ogura
基次 小倉
Tomoaki Uno
智昭 宇野
Takeshi Uenoyama
雄 上野山
Katsunori Nishii
勝則 西井
Soichi Kimura
木村 荘一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60025505A priority Critical patent/JPS61185991A/en
Publication of JPS61185991A publication Critical patent/JPS61185991A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable fixture with high junction efficiency by a method wherein a resin introduced groove, which can flow excessive resin, is formed to a bottom part of a concave section formed on a compound semiconductor substrate. CONSTITUTION:An activator region 3, which is extended to [110] face direction, is formed with regard to [100] face of an InP substrate and a window 7 is made after masking an SiO2 film e.g. on the whole face, then an (a) section of the window 7 becomes a V-groove guide 4 after etching thereof and (b) section becomes a resin introduced groove 5. When H3PO4/HCl system etching is performed for the substrate crystal, the V-groove appears finely on the V- groove guide, then the groove 5 is formed to the groove introduced section due to crystal orientation dependability of etching. In the groove depth, the resin introduced groove 5 side is trimmed to be about several mum deeper than the V groove 4 side. When the optical fiber is fixed on the V-groove guide, optical output, which the optical fiber accepts from laser active region, is almost the same value as that before introducing resin. Thereby, loss before and after fixing of the optical fiber is made zero, therefore high efficient junction can be performed in that respect and it becomes a stable optical coupling device.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は光導波路あるいは光電気回路と、光ファイバと
の位置合せを容易に、精度よくする光結合装置に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an optical coupling device that facilitates and accurately aligns an optical waveguide or an optical electrical circuit with an optical fiber.

従来の技術 光導波路及び光電気装置と光ファイバの結合において、
光導波路あるいは光電気回路が形成された化合物半導体
基板上に、光ファイバを置くだけで位置出しの可能な位
置合せ用のガイド機構を選択エツチングによって形成し
た半導体装置はすでに提案されている。
Conventional technology In coupling optical waveguides and opto-electrical devices to optical fibers,
Semiconductor devices have already been proposed in which a guide mechanism for positioning is formed by selective etching on a compound semiconductor substrate on which an optical waveguide or an opto-electrical circuit is formed, allowing positioning by simply placing an optical fiber.

このような半導体装置の製造方法は、例えば、第6図に
示すように〔1oo〕面を主面とするInP基板1のH
2Po4系エツチングの結晶方位依存性を利用して、ス
トライプ状レーザの活性領域(光電気回路)3の延長部
分に光ファイバ2の位置合せ用のV溝ガイド4を形成し
ている(たとえば特開昭es7−141890号)。
A method for manufacturing such a semiconductor device is, for example, as shown in FIG.
Utilizing the crystal orientation dependence of 2Po4 etching, a V-groove guide 4 for positioning the optical fiber 2 is formed in the extension of the active region (optoelectric circuit) 3 of the striped laser (for example, (Sho es7-141890).

上記方法によって形成されたV溝ガイド4を有する半導
体装置は、そのV溝ガイド上に光ファイバを置くだけで
位置出しが可能となる。従来は第7図に示すようにその
基板1上に形成されたV溝上に光ファイバ2を固定する
方法として、上記V溝ガイド4に設置した光フアイバ2
上から、エポキシ樹脂1oを塗布する方法が用いられて
いた。
A semiconductor device having a V-groove guide 4 formed by the above method can be positioned simply by placing an optical fiber on the V-groove guide. Conventionally, as shown in FIG. 7, as a method for fixing the optical fiber 2 onto the V-groove formed on the substrate 1, the optical fiber 2 is installed in the V-groove guide 4.
A method of applying epoxy resin 1o from above was used.

発明が解決しようとする問題点 従来の方法により基板上の凹部(第6図、第7図ではV
溝)に光ファイバを固定した際、上記光ファイバの上か
ら樹脂を塗布するため、光ファイバの下部、すなわちV
溝の底部に樹脂がまわり込み、光ファイバが浮き上った
り、横ずれをおこし、光ファイバの位置決めされた、本
来の位置からずれ、樹脂の硬化後の結合効率は、硬化前
と比較して、非常に悪くなるという問題点が生じる。
Problems to be Solved by the Invention Conventional methods have been used to remove concave portions (V in FIGS. 6 and 7) on the substrate.
When the optical fiber is fixed in the groove), the resin is applied from above the optical fiber, so the lower part of the optical fiber, that is, V
The resin wraps around the bottom of the groove, causing the optical fiber to lift up or shift laterally, causing the optical fiber to shift from its original position. The problem arises that it gets very bad.

問題点を解決する為の手段 上記問題点を解決するだめに、本発明では、化合物半導
体基板上に形成された凹部の底部に、過剰な樹脂が流れ
込むことが可能な樹脂導入溝を形成する。
Means for Solving the Problems In order to solve the above problems, in the present invention, a resin introduction groove into which excess resin can flow is formed at the bottom of a recess formed on a compound semiconductor substrate.

作  用 上記技術的手段によって、凹部上に光ファイバを固定す
るために塗布された過剰な樹脂は、上記樹脂導入溝の中
に容易に流れ込み、光ファイバが浮き上ったシ、横ずれ
をおこすことなく、すでに光導波路あるいは光電気回路
と位置決めして設けられた凹部上に、位置ずれなく、さ
らに精度よく固定される。したがって樹脂導入前とほぼ
同じ結合効率で固定することが可能となる。
Effect: By using the above technical means, the excess resin applied to fix the optical fiber on the recess easily flows into the resin introduction groove, causing the optical fiber to float up or cause lateral displacement. The optical waveguide or optoelectric circuit can be fixed with high accuracy without any displacement on the recess already provided in position with the optical waveguide or the optoelectric circuit. Therefore, it becomes possible to immobilize with almost the same binding efficiency as before introduction of the resin.

実施例 第1図、第2図は、本発明の一実施例における樹脂導入
溝5をV溝ガイド4の底部側面に有する半導体と光ファ
イバ2との光結合装置を示すものである。すなわち、I
!IP 基板1上にV溝ガイド4が形成され、このガイ
ド4に光ファイバ2が固定される構成であり、かつ上記
ガイド4の底部の基板1に樹脂を流し込む樹脂導入溝5
が設けられている。この装置の製造について説明すると
、第3図、第4図に示すようにInP基板〔10o〕面
に対し、〔11o〕方向に延在する活性領域3を公知技
術により形成する。次に全面をSio2膜などでマスク
した後、該活性領域上に窓7をあける。
Embodiment FIGS. 1 and 2 show an optical coupling device between a semiconductor and an optical fiber 2, which has a resin introduction groove 5 on the bottom side surface of a V-groove guide 4 in an embodiment of the present invention. That is, I
! A V-groove guide 4 is formed on the IP substrate 1, and the optical fiber 2 is fixed to this guide 4, and a resin introduction groove 5 for pouring resin into the substrate 1 at the bottom of the guide 4 is provided.
is provided. To explain the manufacturing of this device, as shown in FIGS. 3 and 4, an active region 3 extending in the [11o] direction is formed on the [10o] surface of an InP substrate using a known technique. Next, after masking the entire surface with a Sio2 film or the like, a window 7 is opened above the active region.

この窓7の(a)部分がエツチング後、■溝ガイド4と
なり0))部分が樹脂導入溝5となる。ここでこのマス
ク上の窓開けは、正確に位置合わせして行う必要がある
。この基板結晶に対しH3PO4/HCp系エツチング
を施こすと第5図(A)のようにV溝ガイド部にはきれ
いにV溝4が現われ、樹脂導入溝部は、InPのH3P
O4/HCl1エツチングの結晶方位依存性により、第
6図(C)のような底部をもった溝6が形成される。上
記エツチング液を使用した場合、■溝ガイド部の■溝先
端が、きれいなV溝に形成された時点ですぐにエツチン
グを停止すると、■溝ガイド樹脂導入溝の深さは等しく
なる。しかし、本実施例の樹脂導入溝5においては、■
溝ガイド4上の光ファイバが浮き上シ、位置ずれするの
を防止するため、過剰な樹脂が樹脂導入溝に流れ込み安
い状態にあることが必要条件となるため、溝の深さはV
溝ガイド4部の深さより樹脂導入溝5の方を数μm程度
深めにした方が、効果はさらにあがる。
After etching, the (a) part of this window 7 becomes the ① groove guide 4 and the 0)) part becomes the resin introduction groove 5. Here, opening the window on the mask must be done with accurate alignment. When this substrate crystal is subjected to H3PO4/HCp-based etching, a V-groove 4 appears neatly in the V-groove guide part as shown in FIG.
Due to the crystal orientation dependence of O4/HCl1 etching, a groove 6 having a bottom as shown in FIG. 6(C) is formed. When using the above etching solution, if etching is stopped immediately after the tip of the groove (2) of the (1) groove guide portion is formed into a clean V-groove, the depths of the (2) groove guide resin introduction grooves become equal. However, in the resin introduction groove 5 of this embodiment,
In order to prevent the optical fiber on the groove guide 4 from floating up or shifting its position, it is necessary that the excess resin flow into the resin introduction groove and keep it in a low state, so the depth of the groove is set to V.
The effect will be further improved if the resin introduction groove 5 is made deeper by several micrometers than the depth of the groove guide 4.

InP基板1はH3PO4/HCpエツチング結晶位依
存性により、方向によってまったく遣ったエツチング特
性を示すことは先に第5図で述べたが、上記特性を利用
することにより、■溝ガイド4よりも、数μm深い樹脂
導入溝6を形成することが可能となる。すなわち、■溝
エツチングにおいては、溝の底がV字型になった地点で
さ゛らにエツチングを継続しても、それ以上深くはなら
ない特性がある。しかし逆方向、つまりここでは樹脂導
入溝の方向は、上記溶液で、■溝ガイド部エツチングと
同時にエツチングをほどこしても、エツチング特性の遣
いにより溝はV字型にはならない。そのためエツチング
を継続すれば深さは限りなく深くなる。すなわち、上記
樹脂導入溝5の深さが上記V溝ガイド4の深さより数μ
m深くなった時点で、エツチングを停止するのがふされ
しい。
As previously mentioned in FIG. 5, the InP substrate 1 exhibits completely different etching characteristics depending on the direction due to the H3PO4/HCp etching crystal orientation dependence, but by utilizing the above characteristics, It becomes possible to form the resin introduction groove 6 several micrometers deep. That is, in (1) groove etching, there is a characteristic that even if etching is continued at a point where the bottom of the groove becomes V-shaped, the groove will not become any deeper. However, even if etching is performed in the opposite direction, that is, in the direction of the resin introduction groove, with the above solution at the same time as (2) etching the groove guide portion, the groove will not become V-shaped due to the etching characteristics. Therefore, if etching is continued, the depth will become infinitely deep. In other words, the depth of the resin introduction groove 5 is several μm smaller than the depth of the V-groove guide 4.
It is appropriate to stop etching when the depth is m.

この実施例の場合、エツチング液の割合は、H2PO4
:HCpが1=2程度マテテ、ツレ以上HCRの分率が
増すと、軸方向の終端面が〔110〕にならない。この
部分は同時にレーザの一方の反射面となる為に〔11o
〕面になることが絶対条件となるために、エツチング液
の割合に関しては特に注意が必要である。
In this example, the proportion of the etching solution is H2PO4
:If the HCR fraction increases by more than 1 = 2, the axial end surface will not become [110]. This part also serves as one reflection surface of the laser [11o
] Since it is an absolute condition that the etching solution has a flat surface, special care must be taken regarding the proportion of the etching solution.

この実施例において、■溝ガイド部のV溝と水平面のな
す角度は約36°と定まっている。このV溝ガイドの幅
はそれによって溝の深さが定まり、従って光ファイバの
太さに応じてそのコアの位置が固定されるものであるか
ら、使用する光ファイバの外径及びレーザ活性領域の表
面からの深さによって一義的に定まる。■溝ガイドの長
さは、ファイバの位置合わせに利用されるだけなのでそ
の為に必要な長さがあればよい。次に樹脂導入溝の深さ
は、■溝より数μm深い程度で、第1図に示すように、
幅は約180μm、長さは約1001a程度であれば十
分である。
In this embodiment, the angle between the V-groove of the groove guide portion and the horizontal plane is determined to be approximately 36°. The width of this V-groove guide determines the depth of the groove, and therefore the position of the core is fixed according to the thickness of the optical fiber, so it depends on the outer diameter of the optical fiber used and the laser active area. Uniquely determined by the depth from the surface. ■The length of the groove guide is only used for fiber alignment, so it only needs to be long enough for that purpose. Next, the depth of the resin introduction groove is several μm deeper than the ■ groove, as shown in Figure 1.
It is sufficient that the width is about 180 μm and the length is about 1001a.

上記のような方法で製造した、樹脂導入溝を有した、半
導体装置において、光ファイバを上記■溝ガイド上に固
定した際、レーザ活性領域から光ファイバが受光した光
出力は、樹脂導入前とほぼ同じ値であった。同じことを
InP 基板上のV溝ガイド底部側面に、上記樹脂導入
溝を形成していない従来の方法で行った場合、樹脂の影
響でずれが生じ、固定後の光出力は樹脂導入前と比較す
ると数チ小さい値であった。ここで使用した樹脂はエポ
キシ系常温硬化型樹脂である。
In a semiconductor device manufactured by the above method and having a resin introduction groove, when an optical fiber is fixed on the above groove guide, the light output received by the optical fiber from the laser active region is different from that before the resin introduction. The values were almost the same. If the same thing was done using the conventional method where the resin introduction groove was not formed on the bottom side of the V-groove guide on the InP substrate, a shift would occur due to the influence of the resin, and the light output after fixing would be compared to before the introduction of the resin. The value was several inches smaller. The resin used here is an epoxy room temperature curing resin.

なお、上記実施例において活性領域3は電気回路、たと
えば半導体レーザあるいはホトダイオードヤある。光電
気回路は光導波路であってもよいことはいうまでもない
In the above embodiments, the active region 3 is an electric circuit, such as a semiconductor laser or a photodiode. It goes without saying that the opto-electric circuit may be an optical waveguide.

発明の効果 以上のように本発明によれば、半導体基板のエツチング
結晶方位依存性を利用し、基板上に位置合せ用凹部と樹
脂導入溝を凹部の底部側面に形成することにより、上記
凹部に設置した光ファイバを固定するために塗布した樹
脂が、樹脂導入溝の中に流れ込むため、位置決めされた
光ファイバが樹脂の影響で浮き上ったりして、位置ずれ
をおこすことなく、上記凹部位置に固定される。このた
め、光フアイバ固定前後での損失はなく、その意味での
結合効率の高い結合を行うことが可能になり、さらに、
安定した光結合装置を得ることができた。
Effects of the Invention As described above, according to the present invention, by utilizing the etching crystal orientation dependence of a semiconductor substrate and forming an alignment recess and a resin introduction groove on the bottom side surface of the recess on the substrate, it is possible to form a recess in the recess. The resin applied to fix the installed optical fiber flows into the resin introduction groove, so the positioned optical fiber is not lifted up due to the influence of the resin and misaligned, and the recessed position is fixed. Fixed. Therefore, there is no loss before and after fixing the optical fiber, and in that sense it is possible to perform coupling with high coupling efficiency.
A stable optical coupling device was obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の光結合装置の一実施例を示す斜視図、
第2図(A)、(B)は同実施例装置位置合わせ用■溝
ガイド部の側面図と正面図、第3図。 第4図は同装置のV溝ガイドと樹脂導入溝の作製方法を
説明するための図、第6図(A) 、 (B)はInP
基板をH3PO4/HCR溶液でエツチングした場合の
V溝ガイドの斜視図と断面図、第6図(C)。 (D)は同エツチングした場合の樹脂導入溝の斜視図と
断面図、第6図は従来の光結合装置の斜視図、第7図(
A)、(B)は同装置の位置合わせ用V溝ガイド部の側
面図と正面図である。 1・・・・・・InP基板、2・・・・・・光ファイバ
、3・・・・・・活性領VC(光電気回路)、4・・・
・・・V溝ガイド、5・・・・・・樹脂導入溝、6・・
・・・・エポキシ樹脂。 代理人の氏名 弁理士 中 尾 歓 男 ほか1名第1
図 工九P@叛 第2図 (八)                (B)ryL
/’契友l 第3図 第4図 第5図 (A)      (C) (B)      (v) べ=勧惧
FIG. 1 is a perspective view showing an embodiment of the optical coupling device of the present invention;
2(A) and 2(B) are a side view and a front view of the ■groove guide portion for positioning the device of the same embodiment, and FIG. 3. Figure 4 is a diagram for explaining the method for manufacturing the V-groove guide and resin introduction groove of the same device, and Figures 6 (A) and (B) are InP.
FIG. 6(C) is a perspective view and a cross-sectional view of the V-groove guide when the substrate is etched with H3PO4/HCR solution. (D) is a perspective view and a sectional view of the resin introduction groove when etched, FIG. 6 is a perspective view of a conventional optical coupling device, and FIG.
A) and (B) are a side view and a front view of the positioning V-groove guide portion of the device. 1...InP substrate, 2...Optical fiber, 3...Active region VC (photoelectric circuit), 4...
... V groove guide, 5 ... Resin introduction groove, 6 ...
····Epoxy resin. Name of agent: Patent attorney Ken Nakao and 1 other person 1st
Artwork 9P@Rebellion 2nd figure (8) (B)ryL
/'Kiyoul Figure 3 Figure 4 Figure 5 (A) (C) (B) (v) Be = Kankan

Claims (3)

【特許請求の範囲】[Claims] (1)半導体基板上に形成された凹部と、上記凹部に固
定された光ファイバと、上記凹部の底部の半導体基板に
形成された樹脂を流し込む樹脂導入溝とを有することを
特徴とする光結合装置。
(1) An optical coupling characterized by having a recess formed on a semiconductor substrate, an optical fiber fixed to the recess, and a resin introduction groove into which resin formed on the semiconductor substrate at the bottom of the recess is poured. Device.
(2)半導体基板上に光導波路または光電気回路が形成
されていることを特徴とする特許請求の範囲第1項記載
の光結合装置。
(2) The optical coupling device according to claim 1, characterized in that an optical waveguide or a photoelectric circuit is formed on a semiconductor substrate.
(3)光電気回路が半導体レーザあるいはホトダイオー
ドからなることを特徴とする特許請求の範囲第2項記載
の光結合装置。
(3) The optical coupling device according to claim 2, wherein the opto-electric circuit comprises a semiconductor laser or a photodiode.
JP60025505A 1985-02-13 1985-02-13 Optical coupling device Pending JPS61185991A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60025505A JPS61185991A (en) 1985-02-13 1985-02-13 Optical coupling device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60025505A JPS61185991A (en) 1985-02-13 1985-02-13 Optical coupling device

Publications (1)

Publication Number Publication Date
JPS61185991A true JPS61185991A (en) 1986-08-19

Family

ID=12167922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60025505A Pending JPS61185991A (en) 1985-02-13 1985-02-13 Optical coupling device

Country Status (1)

Country Link
JP (1) JPS61185991A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6321611A (en) * 1986-07-14 1988-01-29 Fujitsu Ltd Connection part structure between waveguide substrate and optical fiber
JPH02126106U (en) * 1989-03-29 1990-10-17
JPH10506204A (en) * 1994-09-26 1998-06-16 シーメンス アクチエンゲゼルシヤフト Coupling device for optically interconnecting OEIC module and optical fiber
KR100453963B1 (en) * 2001-12-19 2004-10-20 엘지전자 주식회사 Optical communication device, method for manufacturing the same and module of the optical communication device
JP2004341535A (en) * 2003-05-15 2004-12-02 Samsung Electronics Co Ltd Optical module
JP2008026679A (en) * 2006-07-24 2008-02-07 Furukawa Electric Co Ltd:The Optical device
JP2010214755A (en) * 2009-03-17 2010-09-30 Sumitomo Bakelite Co Ltd Method of manufacturing channel device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6321611A (en) * 1986-07-14 1988-01-29 Fujitsu Ltd Connection part structure between waveguide substrate and optical fiber
JPH02126106U (en) * 1989-03-29 1990-10-17
JPH10506204A (en) * 1994-09-26 1998-06-16 シーメンス アクチエンゲゼルシヤフト Coupling device for optically interconnecting OEIC module and optical fiber
KR100453963B1 (en) * 2001-12-19 2004-10-20 엘지전자 주식회사 Optical communication device, method for manufacturing the same and module of the optical communication device
JP2004341535A (en) * 2003-05-15 2004-12-02 Samsung Electronics Co Ltd Optical module
JP2008026679A (en) * 2006-07-24 2008-02-07 Furukawa Electric Co Ltd:The Optical device
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