JPS61183470A - Electron beam deposition device - Google Patents

Abstract

PURPOSE:To form a fine thin film pattern having high purity and high accuracy by making possible the observation and evaluation of a formed thin film by irradiating an electron beam to the surface of the substrate in an atmosphere contg. a deposition material. CONSTITUTION:This electron beam deposition device consists of a means 116 for passing gas contg. the deposition material 112 to the substrate 111 placed in a sample chamber 102, an irradiating means for irradiating the electron beam 104 on the surface of the substrate 111 and the depositing the thin film thereon and a means for evaluating the thin film. The above-mentioned evaluating means evaluates the thin film by observing the various physical phenomena in the thin film generated by the irradiation of the beam 10 during and after the formation of the thin film.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a deposition apparatus for forming a thin film pattern on a substrate.

[Purpose of the invention]

An object of the present invention is to easily form fine thin film patterns with high purity and precision by performing selective deposition using an electron beam without using a mask such as a resist. An object of the present invention is to provide an electron beam deposition apparatus that can be used for analysis during and/or after thin film formation.

[Structure of the invention]

The electron beam deposition apparatus of the present invention includes means for flowing a gas containing at least a material to be deposited as a constituent element onto a substrate placed in a sample chamber, and a means for depositing a thin film of the material on a desired portion of the substrate. means capable of irradiating the surface of the substrate with an electron beam; and various physical phenomena occurring in the constituent elements of the thin film due to the irradiation of the electron beam generated by the electron beam irradiation means during and/or after the formation of the thin film. The method is characterized by comprising means for observing and evaluating the thin film.

[Principle of the invention]

Next, the principle of the present invention will be explained using FIG. 2.

When the deposition target substrate 22 is placed in an atmosphere of gas macromolecules 21 containing the material to be deposited, the gas molecules 21 are adsorbed onto the surface of the deposition target substrate 22.

23 indicates the adsorbed molecule. When the electron beam 24 is irradiated onto the substrate 22, the adsorbed molecules 23 of the atmospheric gas in the irradiated area are converted into deposition material elements 2 contained in the atmospheric gas adsorbed molecules 23 due to the energy of the electron beam 24.
5 and volatile material molecules 26, and the deposition material element 25 is deposited on the substrate surface. On the other hand, volatile material molecule 2
6 is ejected. According to the principle described above, the deposition material contained in the atmospheric gas can be deposited and patterned directly on the surface of the deposition target substrate 22 by electron beam irradiation.

When the deposited deposition material element is irradiated with an electron beam, characteristic X-rays, Auger electrons, secondary electrons, scattered electrons, etc. are emitted due to interaction between the deposition material element and the electron beam. For example, by measuring the wavelength and intensity of characteristic X-rays, it is possible to identify and quantify the deposition material elements deposited on the substrate surface, and by measuring the energy of Auger electrons, information about the surface state of the deposited thin film can be obtained. be able to. These can be performed "in situ observation" during thin film formation, or can be performed after thin film formation. Furthermore, by irradiating an electron beam after forming a thin film pattern and detecting secondary electrons generated thereby, information regarding the shape of the thin film pattern can be obtained.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a block diagram of an electron beam deposition apparatus that is an embodiment of the present invention. This electron beam deposition apparatus is composed of an electron beam irradiation system 101, a sample chamber 102, and an atmospheric gas material supply system 103.

The electron beam irradiation system 101 includes an electron beam gun 105 that generates an electron beam 104 and an electron beam convergence system 106.

The sample chamber 102 includes a sample stage 107 placed on two moving stages (not shown), a secondary electron detector 108, an X-ray microanalyzer detector 109, and an Auger electron spectroscopy detector 110. We are prepared. The sample stage 107 has a sample 111 placed thereon.
can be heated, thereby improving the film quality of the deposition film. The sample temperature is then measured by a thermocouple.

The atmospheric gas material supply system 103 supplies the atmospheric gas material 112.
The sample chamber 102 includes an atmospheric gas material storage chamber 113 in which the sample chamber 102 is housed, mass flow controllers 114 and 115, and a blow nozzle 116 provided in the sample chamber 102. The atmospheric gas material storage chamber 113 is capable of being heated.
The amount of atmospheric gas material 112 released from nozzle 116 can be controlled by temperature.

Next, the operation of the electron beam deposition apparatus of this embodiment will be explained. After setting the sample 111 on the sample stage 107 and evacuating the electron beam irradiation system 101 and the sample chamber 102 separately to an ultra-high vacuum, the carrier gas 117 is passed through the mass flow controller 114 to the atmospheric gas material storage chamber 113.
to be introduced within.

Atmospheric gas material 112 is carried by carrier gas 117 and passes through mass flow controller 115.
Sample 111 in sample chamber 102 from spray nozzle 116
The atmospheric gas molecules are adsorbed onto the sample surface. On the other hand, in the electron beam irradiation system 101, an electron beam 104 generated by an electron beam gun 105 is irradiated onto a desired location on a sample 111 by an electron beam focusing system 106. The adsorbed molecules of the atmospheric gas in the irradiated area are decomposed into deposition material elements and volatile material molecules by the energy of the electron beam, and the deposition material elements are precipitated on the sample surface to form a deposition film. Since the electron beam irradiation system 101 and the sample chamber 102 are kept in an ultra-high vacuum, residual gas components such as oxygen and carbon are prevented from entering the deposition film. The deposition pattern is similar to that of electron beam lithography equipment.
Patterning can be done by computer control. In addition, sample stage 1
Similarly to the electron beam lithography apparatus, the position of 07 is controlled with high precision by a laser interferometer. As described above, according to the electron beam deposition apparatus of this embodiment, a fine thin film pattern can be easily formed by performing selective deposition using an electron beam without requiring a mask such as a resist.

During the formation of the thin film pattern as described above, the electron beam hits the deposited material elements, so that characteristic X-rays and Auger electrons are emitted from the material elements. As described above, in the apparatus of this embodiment, the X-ray microanalyzer detector 109 and the Auger electron spectroscopy detector 110 are incorporated in the sample chamber 102, and the X-ray microanalyzer detector 109 detects the wavelength of characteristic By measuring the intensity of
Can be analyzed in 5 itu. Furthermore, by measuring the energy of Auger electrons using the Auger electron spectroscopy detector 110, the surface state of the deposition film can be analyzed in 5 situ. Furthermore, the pattern shape after forming the thin film is determined by the electron beam irradiation system 10.
1, the electron beam is scanned and incident on the sample surface, and the secondary electrons generated thereby are detected by the secondary electron detector 108, thereby making it possible to investigate.

As described above, according to this embodiment, using an electron beam,
The constituent elements and surface conditions of the deposited film can be analyzed in 5 situ during thin film formation, and the shape of the thin film pattern can be detected after thin film formation, making it possible to form thin films with high purity and precision. can.

Although one embodiment of the present invention has been described above, the present invention is not limited to this embodiment, and it goes without saying that various modifications and changes can be made within the scope of the present invention. For example, the method is not limited to characteristic X-rays, Auger electrons, and secondary electrons, but may be used to observe any physical phenomenon that occurs in constituent elements of a thin film due to electron beam irradiation. Further, analysis of thin film constituent elements, etc. may be performed after the thin film is formed.

〔Effect of the invention〕

According to the present invention, as explained above, the deposition material can be deposited by irradiating the substrate surface with an electron beam in an atmospheric gas containing the deposition material, and during the deposition (in 5itU) and Alternatively, since constituent elemental analysis 2 surface analysis of the deposited film can be performed after the deposition, it is possible to easily form a fine thin film pattern with high purity and high precision.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing the configuration of an embodiment of the electron beam deposition apparatus of the present invention, and FIG. 2 is a diagram for explaining the present invention in detail. 101... Electron beam irradiation system 102... Sample chamber 103... Atmospheric gas material supply system 104... Electron beam 107... Sample stage 108... Secondary electron detector 109... X-ray microanalyzer detector 110...
Auger electron spectroscopy detector 111... Sample 112... Atmosphere gas material 113... Atmosphere gas material storage chamber 116... Spraying nozzle

Claims (1)

[Claims] (1) means for flowing a gas containing at least the material to be deposited as a constituent element onto a substrate placed in a sample chamber;
means capable of irradiating the surface of the substrate with an electron beam in order to deposit a thin film of the material on a desired portion of the substrate; An electron beam deposition apparatus comprising means for evaluating the thin film by observing various physical phenomena during and/or after the formation of the thin film.