JP3218024B2 - Method and apparatus for forming metal pattern film - Google Patents
Method and apparatus for forming metal pattern filmInfo
- Publication number
- JP3218024B2 JP3218024B2 JP13855099A JP13855099A JP3218024B2 JP 3218024 B2 JP3218024 B2 JP 3218024B2 JP 13855099 A JP13855099 A JP 13855099A JP 13855099 A JP13855099 A JP 13855099A JP 3218024 B2 JP3218024 B2 JP 3218024B2
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- focused ion
- copper compound
- sample
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体デバイスあるい
は露光用フォトマスク（Ｘ線マスクを含む）等に、配線
または遮光のための金属パターン膜を追加形成するため
の方法及び装置に関するものである。デバイスの配線変
更、不良解析あるいはフォトマスクの欠絶リペア、パタ
ーン変更等に利用されるものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for additionally forming a wiring or a metal pattern film for shielding light on a semiconductor device or a photomask for exposure (including an X-ray mask). . It is used for device wiring change, failure analysis, missing repair of photomask, pattern change, and the like.
【０００２】[0002]
【従来の技術】集束イオンビームを用いてカーボン膜に
よるフォトマスクの欠焔を修正する方法・装置および金
属パターン膜を形成する方法・装置は、特開平9−17201
3号公報に開示されている。ここで示されている形成さ
れる膜はカーボン膜、タングステン膜、モリプデン膜で
あり、光リソグラフイー用マスクの遮光膜や半導体デバ
イスへの追加配線用膜としての特性を持つ。しかし、こ
れらの膜は多量の酸素および炭素を多く含んでおり、そ
れぞれの純物質と比較して比抵抗が10倍から100倍も高
い。2. Description of the Related Art A method and an apparatus for correcting a missing flame of a photomask by a carbon film using a focused ion beam and a method and an apparatus for forming a metal pattern film are disclosed in JP-A-9-17201.
No. 3 discloses this. The films formed here are a carbon film, a tungsten film, and a molybdenum film, and have characteristics as a light-shielding film of a photolithographic mask and a film for additional wiring to a semiconductor device. However, these films are rich in large amounts of oxygen and carbon and have a specific resistance 10 to 100 times higher than their respective pure substances.
【０００３】[0003]
【発明が解決しようとする課題】前記に示されたよう
に、従来はイオンビームを用いてマスクレスデポジショ
ンによる金属膜を形成する技術はあっても、その比抵抗
は高く、より低抵抗な膜の形成が望まれている。特に、
半導体装置の抵抗の低い配線としては、適応できなかっ
た。As described above, although there has conventionally been a technique of forming a metal film by maskless deposition using an ion beam, its specific resistance is high, and its resistance is lower. The formation of a film is desired. In particular,
It cannot be applied as a wiring having a low resistance of a semiconductor device.
【０００４】[0004]
【課題を解決するための手段】本発明は上記の問題点を
解決するために開発されたもので、その手段は、集束イ
オンビーム発生部、上記集束イオンビームを偏向走査す
るための偏向電極、上記集束イオンビームを照射する試
料を載置するＸ−Ｙステージ、上記集束イオンビームの
照射領域近傍に局所的に有機銅化合物蒸気を吹きつける
ための吹出口を持つガス銃等で構成されている。SUMMARY OF THE INVENTION The present invention has been developed to solve the above problems, and includes means for generating a focused ion beam, a deflection electrode for deflecting and scanning the focused ion beam, It is composed of an XY stage on which a sample to be irradiated with the focused ion beam is mounted, a gas gun having an outlet for spraying an organic copper compound vapor locally near the irradiation region of the focused ion beam, and the like. .
【０００５】集束イオンビームの照射領域あるいは近傍
に吹出口を持つガス銃によって局所的に有機銅化合物蒸
気が試料に吹きつけられ、吹きつけられた有機銅化合物
蒸気が試料表面に吸着される。以上のようにして有機銅
化合物蒸気を吸着させた試料表面に、集束イオンビーム
発生部、偏向電極、走査制御部、イオンビーム走査領域
設定部等によって集束及び走査制御された集束イオンビ
ームが照射される。有機銅化合物蒸気を連続的に吹きつ
けつつ、集束イオンビーム走査を繰り返すことにより、
走査回数に比例した膜厚を持つ低抵抗な金属パターン膜
が形成される。An organic copper compound vapor is locally sprayed on a sample by a gas gun having an outlet in or near the focused ion beam irradiation area, and the sprayed organic copper compound vapor is adsorbed on the sample surface. The focused ion beam focused and scanned by the focused ion beam generating unit, the deflection electrode, the scanning control unit, the ion beam scanning area setting unit, and the like is irradiated on the sample surface having the organocopper compound vapor adsorbed as described above. You. By repeating focused ion beam scanning while continuously blowing organic copper compound vapor,
A low-resistance metal pattern film having a thickness proportional to the number of scans is formed.
【０００６】[0006]
【発明の実施の形態】以下、本発明を実施例に示した図
1に基づき詳細に説明する。イオン源1より発生したイオ
ンをイオンレンズ2、5により集束させる。更に、ブラン
キング電極3により、集束イオンビームの試料９上への
照射をオン・オフする。イオンレンズ２、5により集束
された集束イオンビーム6はＸ−Ｙステージ10上に載置
された試料9に照射され、走査電極（Ｘ及びＹ）4によっ
て前記試料9上を走査される。BRIEF DESCRIPTION OF THE DRAWINGS FIG.
This will be described in detail based on 1. The ions generated from the ion source 1 are focused by the ion lenses 2 and 5. Further, the irradiation of the focused ion beam onto the sample 9 is turned on / off by the blanking electrode 3. The focused ion beam 6 focused by the ion lenses 2 and 5 is applied to a sample 9 placed on an XY stage 10 and scanned on the sample 9 by scanning electrodes (X and Y) 4.
【０００７】前記試料9表面から放出される二次荷電粒
子7は二次荷電粒子検出器8によって検出され、A／D変換
器12よって増幅及び処理されて輝度信号となり、制御電
源1３からの走査信号と共に表示装置15に入力されて二
次荷電粒子像が表示される。この二次荷電粒子像によっ
て試料9上の金属パターン膜を形成すべき位置を探し出
し、制御電源１３にある走査範囲設定部で前記金属パタ
ーン膜を形成すべき領域を設定する。制御電源1３から
のデポジション開始信号によってガス銃１１のバルブが
開き、有機銅化合物蒸気が、試料9表面に吹きつけられ
る。[0007] The secondary charged particles 7 emitted from the surface of the sample 9 are detected by a secondary charged particle detector 8, amplified and processed by an A / D converter 12 to become a luminance signal, and scanned by a control power supply 13. The image is input to the display device 15 together with the signal, and the secondary charged particle image is displayed. A position where the metal pattern film is to be formed on the sample 9 is searched by the secondary charged particle image, and an area where the metal pattern film is to be formed is set by the scanning range setting unit provided in the control power supply 13. The valve of the gas gun 11 is opened by the deposition start signal from the control power supply 13, and the organic copper compound vapor is sprayed on the surface of the sample 9.
【０００８】この時、リザーバー15はヒーターにより一
定温度に加熱され、その物質の蒸気庄を一定に保ちガス
銃のコンダクタンスにより試料表面に供給される。ま
た、ガス源の蒸気圧が高い場合はガス銃のコンダクタン
スのみで供給することは困難であり、その場合は外部に
ガスの供給装置16を設け、ガス圧を制御する事によりガ
ス銃11を通して試料表面にガスを供給することができ
る。なお、有機銅化合物として、Ｃ10Ｈ13ＣｕＦ6Ｏ2Ｓ
ｉ（ヘキサフルオロアセチルアセトナト銅）やＣｕ（Ｃ
11Ｈ19Ｏ2)2（ビスジピバロイルメタナト銅）などが用
いられる。またＣ10Ｈ13ＣｕＦ6Ｏ2Ｓｉは、Ｃ5Ｈ12Ｓ
ｉとＣ5Ｈ6Ｏ4Ｆ6と混合するこ ともできる。At this time, the reservoir 15 is heated to a constant temperature by the heater, and the material is supplied to the sample surface by the conductance of the gas gun while keeping the vapor level of the substance constant. When the vapor pressure of the gas source is high, it is difficult to supply only the conductance of the gas gun. In this case, a gas supply device 16 is provided outside, and the gas pressure is controlled so that the sample is supplied through the gas gun 11. A gas can be supplied to the surface. In addition, as the organic copper compound, C 10 H 13 CuF 6 O 2 S
i (copper hexafluoroacetylacetonate) or Cu (C
11 H 19 O 2 ) 2 (copper bis-dipivaloylmethanato) or the like is used. C 10 H 13 CuF 6 O 2 Si is C 5 H 12 S
i and C 5 H 6 O 4 F 6 and also mixed child.
【０００９】上記のようにして、有機銅化合物蒸気を吸
着させた試料9表面に、前記走査範囲設定部によって走
査範囲、走査回数を制御された集束イオンビーム6が照
射される。すると集束イオンビームが照射された領域で
有機銅化合物が分解されて、金属がデポジションつまり
堆積される。連続して前記有機銅化合物ガスを吹きつけ
つつ集束イオンビーム6の走査を繰り返すことにより走
査回数に比例した膜厚を持っ金属パターン膜が形成され
る。As described above, the surface of the sample 9 on which the organic copper compound vapor is adsorbed is irradiated with the focused ion beam 6 whose scanning range and scanning frequency are controlled by the scanning range setting section. Then, the organic copper compound is decomposed in the region irradiated with the focused ion beam, and the metal is deposited, that is, deposited. By repeatedly scanning the focused ion beam 6 while continuously blowing the organic copper compound gas, a metal pattern film having a film thickness proportional to the number of scans is formed.
【００１０】以上のように本発明によれば、膜形成のた
めの原料ガスを従来用いられたへキサカルボニル金属蒸
気でなく有機銅化合物としたことにより、より低抵抗な
膜の形成が可能になった。As described above, according to the present invention, it is possible to form a film having lower resistance by using an organic copper compound instead of a conventionally used hexacarbonyl metal vapor as a raw material gas for forming a film. became.
【００１１】[0011]
【発明の効果】本発明では、有機銅化合物の蒸気を試料
（半導体装置）に吹き付け、集束イオンビームの照射に
より、銅を試料表面に形成される。従って、低抵抗の配
線が新規に半導体装置に形成することができる。According to the present invention, copper is formed on the surface of a sample by spraying a vapor of an organic copper compound onto the sample (semiconductor device) and irradiating a focused ion beam. Therefore, a low-resistance wiring can be newly formed in the semiconductor device.
【図1】図1は本発明による装置の実施例の構成図であ
る。FIG. 1 is a configuration diagram of an embodiment of an apparatus according to the present invention.
１ イオン源、 ２ イオンレンズ ３ ブランキング電極 ４ 査電走極 ６ 集束イオンビーム ７ ２次荷電粒子 ８ ２次荷電粒子検出器 ９ 試料 １０ Ｘ−Ｙステージ １１ ガス銃 １２ A／D変換器 １３ 制御電源 １４ 表示装置 １５ リザーバー １６ ガス供給装置 DESCRIPTION OF SYMBOLS 1 Ion source, 2 Ion lens 3 Blanking electrode 4 Scanning electrode 6 Focused ion beam 7 Secondary charged particle 8 Secondary charged particle detector 9 Sample 10 XY stage 11 Gas gun 12 A / D converter 13 Control Power supply 14 Display device 15 Reservoir 16 Gas supply device
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｌ 21/027 Ｈ０１Ｌ 21/30 ５０２Ｐ 21/3205 ５０２Ｗ 21/88 Ｂ (56)参考文献 特開 平９−172013（ＪＰ，Ａ) 特開 平６−236879（ＪＰ，Ａ) 特開 平７−3459（ＪＰ，Ａ) 特開 平８−288242（ＪＰ，Ａ) 特開 平８−8254（ＪＰ，Ａ) 志村幸雄編「電子材料 11月号別冊 超ＬＳＩ製造・試験装置ガイドブック＜ 1998年版＞」（平９−11−25）工業調査 会 ｐ．197−202 (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 14/00 - 14/58 C23C 16/00 - 16/56 C03F 1/08 H01J 37/317 H01L 21/027 H01L 21/3205 ＪＩＣＳＴファイル（ＪＯＩＳ)────────────────────────────────────────────────── ─── Continued on the front page (51) Int.Cl. 7 Identification code FI H01L 21/027 H01L 21/30 502P 21/3205 502W 21/88 B (56) References JP-A-9-172013 (JP, A JP-A-6-236879 (JP, A) JP-A-7-3459 (JP, A) JP-A-8-288242 (JP, A) JP-A 8-8254 (JP, A) Edited by Yukio Shimura Materials November Issue, Super LSI Manufacturing and Testing Equipment Guidebook <1998 Edition>"(Heisei 9-11-25) Industrial Research Association p. 197-202 (58) Field surveyed (Int.Cl. 7 , DB name) C23C 14/00-14/58 C23C 16/00-16/56 C03F 1/08 H01J 37/317 H01L 21/027 H01L 21 / 3205 JICST file (JOIS)
Claims (2)
ビームを集束するためのイオンレンズと、前記イオンビ
ームを試料上でオン・オフするためのブランキング電極
とからなる集束イオンビーム発生部と、前記集束イオン
ビームを偏向走査するための偏向電極と、前記集束イオ
ンビームが照射される試料を載置しＸ−Ｙ方向に移動可
能なＸ一Ｙステージと、前記試料の集束イオンビーム照
射位置表面に原料ガスを局所的に吹き付けるためのガス
銃と、前記ガス銃にガスを供給し、ガス原料を収容し加
熱する機能を備えたガス源と、集束イオンビーム照射に
より発生する二次荷電粒子を検出する二次荷電粒子検出
器とからなり、 前記ガス源に有機銅化合物を収容加熱し、蒸気化し、前
記集束イオンビームの照射領域またはその近傍に前記有
機銅化合物蒸気を吹き付け、前記試料表面に前記有機銅
化合物を吸着させ、前記有摸銅化合物を吸着した試料表
面に、前記集束イオンビームを所定領域で所定回数繰り
返し走査させ照射することにより、有機銅化合物を分解
させ、前記試料表面に金属を析出させる金属パターン膜
の形成方法において、前記有機銅化合物がＣｕ(Ｃ11Ｈ
19Ｏ2)2であることを特徴とする金属パターン膜の形成
方法。A focused ion beam generator comprising: a liquid metal ion source; an ion lens for focusing an extracted ion beam; and a blanking electrode for turning the ion beam on and off on a sample. A deflection electrode for deflecting and scanning the focused ion beam; an X-Y stage on which a sample to be irradiated with the focused ion beam is mounted and movable in XY directions; and a focused ion beam irradiation position surface of the sample gas for blowing raw gas locally to
A gun , a gas source having a function of supplying gas to the gas gun, containing and heating a gas raw material, and a secondary charged particle detector for detecting secondary charged particles generated by focused ion beam irradiation. The organic copper compound is accommodated in the gas source, heated and vaporized, the organic copper compound vapor is sprayed on or near the irradiation area of the focused ion beam, and the organic copper compound is adsorbed on the surface of the sample. A metal pattern film for decomposing an organic copper compound and depositing a metal on the sample surface by repeatedly irradiating the focused ion beam with a predetermined number of scans in a predetermined region on the sample surface on which the copper compound has been adsorbed, and irradiating the focused ion beam with the predetermined region. In the forming method, the organic copper compound is Cu (C 11 H).
19 O 2 ) 2 , wherein the metal pattern film is formed.
ビームを集束するた めのイオンレンズと、前記イオン
ビームを試料上でオン・オフするためのブランキング電
極とからなる集束イオンビーム発生部と、前記集束イオ
ンビームを偏向走査するための偏向電極と、前記集束イ
オンビームが照射される試料を載置しＸ−Ｙ方向に移動
可能なＸ−Ｙステージと、前記試料の集束イオンビーム
照射位置表面に原料ガスを局所的に吹き付けるためのガ
ス銃と、前記ガス銃にガスを供給し、ガス原料を収容し
加熱する機能を備えたガス源と、集束イオンビーム照射
により発生する二次荷電粒子を検出する二次荷電粒子検
出器とからなり、 前記ガス源に有機銅化合物を収容加熱し、蒸気化し、前
記集束イオンビームの照射領域を含むその近傍に前記有
機銅化合物蒸気を吹きつけ、前記試料表面に前記有機銅
化合物を吸着させ、前記有機銅化合物を吸着した試料表
面に、前記集束イオンビームを所定領域で所定回数繰り
返し走査させ照射することにより、有機銅化合物を分解
させ、前記試料表面に金属を析出させる金属パターン膜
の形成装置において、前記有機銅化合物がＣｕ(Ｃ11Ｈ
19Ｏ2)2であることを特徴とする金属パターン膜の形成
装置。2. A focused ion beam generator comprising a liquid metal ion source, an ion lens for focusing the extracted ion beam, and a blanking electrode for turning on and off the ion beam on a sample. A deflecting electrode for deflecting and scanning the focused ion beam, an XY stage on which a sample to be irradiated with the focused ion beam is mounted and movable in XY directions, and a focused ion beam irradiation position of the sample. moth for blowing raw gas locally to the surface
From the scan gun, the gas supplied to the gas gun, a gas source with a function of heating houses a gas feed, a secondary charged particle detector for detecting secondary charged particles generated by the focused ion beam irradiation The organic copper compound is accommodated in the gas source, heated and vaporized, and the organic copper compound vapor is blown to the vicinity including the irradiation region of the focused ion beam, and the organic copper compound is adsorbed on the sample surface, A metal pattern film forming apparatus for decomposing an organic copper compound and depositing a metal on the sample surface by repeatedly irradiating the focused ion beam with a predetermined number of scans and irradiation in a predetermined area on the sample surface on which the organic copper compound is adsorbed, In the above, the organic copper compound is Cu (C 11 H
19 O 2 ) 2 , wherein the metal pattern film is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13855099A JP3218024B2 (en) | 1998-05-22 | 1999-05-19 | Method and apparatus for forming metal pattern film |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14135198 | 1998-05-22 | ||
| JP10-141351 | 1998-05-22 | ||
| JP13855099A JP3218024B2 (en) | 1998-05-22 | 1999-05-19 | Method and apparatus for forming metal pattern film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000054116A JP2000054116A (en) | 2000-02-22 |
| JP3218024B2 true JP3218024B2 (en) | 2001-10-15 |
Family
ID=26471554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13855099A Expired - Fee Related JP3218024B2 (en) | 1998-05-22 | 1999-05-19 | Method and apparatus for forming metal pattern film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3218024B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6441479B1 (en) | 2000-03-02 | 2002-08-27 | Micron Technology, Inc. | System-on-a-chip with multi-layered metallized through-hole interconnection |
| JP4223672B2 (en) * | 2000-10-31 | 2009-02-12 | エスアイアイ・ナノテクノロジー株式会社 | Beam-shaped film pattern forming method |
| WO2002044079A1 (en) * | 2000-11-29 | 2002-06-06 | Seiko Instruments Inc. | Method and apparatus for manufacturing ultra fine three-dimensional structure |
| EP2261395A1 (en) * | 2009-06-12 | 2010-12-15 | Fei Company | Au-containing layer obtainable by charged particle beam processing |
-
1999
- 1999-05-19 JP JP13855099A patent/JP3218024B2/en not_active Expired - Fee Related
Non-Patent Citations (1)
| Title |
|---|
| 志村幸雄編「電子材料 １１月号別冊 超ＬＳＩ製造・試験装置ガイドブック＜１９９８年版＞」（平９−１１−２５）工業調査会 ｐ．１９７−２０２ |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000054116A (en) | 2000-02-22 |
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