JPS61182049U - - Google Patents

Info

Publication number

JPS61182049U

JPS61182049U JP6584585U JP6584585U JPS61182049U JP S61182049 U JPS61182049 U JP S61182049U JP 6584585 U JP6584585 U JP 6584585U JP 6584585 U JP6584585 U JP 6584585U JP S61182049 U JPS61182049 U JP S61182049U

Authority

JP

Japan

Prior art keywords

semiconductor substrate

guard ring

conductivity type

recess

diffusion depth

Prior art date

1985-05-02

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
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• 239000000758 substrate Substances 0.000 claims description 5
• 230000004888 barrier function Effects 0.000 claims description 3
• 239000004065 semiconductor Substances 0.000 claims 4
• 238000009792 diffusion process Methods 0.000 claims 2
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
• 229910052710 silicon Inorganic materials 0.000 description 1
• 239000010703 silicon Substances 0.000 description 1
• 229910052814 silicon oxide Inorganic materials 0.000 description 1