JPS61174692A - Evaluation circuit for semiconductor laser - Google Patents

Evaluation circuit for semiconductor laser

Info

Publication number
JPS61174692A
JPS61174692A JP1762085A JP1762085A JPS61174692A JP S61174692 A JPS61174692 A JP S61174692A JP 1762085 A JP1762085 A JP 1762085A JP 1762085 A JP1762085 A JP 1762085A JP S61174692 A JPS61174692 A JP S61174692A
Authority
JP
Japan
Prior art keywords
semiconductor laser
deterioration
value
voltage
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1762085A
Other languages
Japanese (ja)
Inventor
Tsutomu Hikita
疋田 勉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP1762085A priority Critical patent/JPS61174692A/en
Publication of JPS61174692A publication Critical patent/JPS61174692A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent automatically a semiconductor laser from deteriorating beyond a prescribed degree by a construction wherein a driving current circuit for the semiconductor laser is broken in response to an output signal of a comparator which determines the relationship in amplitude between a driving current value of the semiconductor laser and a reference value being settable arbitrarily. CONSTITUTION:A voltage of Re.IL is generated at a resistor 6 by a driving current IL of a semiconductor laser 4 to be tested which is made luminant by a power set by a variable reference voltage generator 1. When the driving current IL increases with the deterioration of the semiconductor laser 4, an emitter voltage Re.IL of a transistor 5 increases also in proportion to the increase of the current IL. When the level of a deterioration reference level setter 8 is set at a value equivalent to an emitter voltage generated when the deterioration proceeds to a precetermined reference current value, accordingly, the outputs of a level comparator 9 and a flip-flop circuit 10 become H when the value Re.IL increases beyond the set voltage due to the deterioration. Therefore a switch element 3 is opened, and a current ceases to flow to the semiconductor laser 4. By this constitution, various semiconductor lasers being different in the degree of deterioration can be obtained simply.

Description

【発明の詳細な説明】 く技術分野〉 本発明は半導体レーザの寿命試験回路に関するものであ
り、予め定められた値まで供試半導体しとを可能とする
ものである。
DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a semiconductor laser life test circuit, and is capable of testing a test semiconductor up to a predetermined value.

〈従来技術〉 半導体レーザの劣化解析を行ない、劣化のプロセスを解
明することは、より長寿命の半導体レーザを開発するた
めの必要な条件である。このためには劣化の程度が異な
る種々の供試半導体レーザが必要とされる。この供試半
導体レーザを得るためには、一定の条件下で半導体レー
ザを連続動作させ、発光パワー及び駆動電流値を監視し
、所定の劣化状態になったときをもって動作を停止させ
、これを供試サンプルとする。従来、この供試サンプル
を得るためには、前述の説明より明らかな如く動作状態
にある半導体レーザの発光パワー及び駆動電流値を常に
監視していなければならないという問題がある。
<Prior Art> Performing a deterioration analysis of a semiconductor laser and elucidating the deterioration process is a necessary condition for developing a semiconductor laser with a longer life. For this purpose, various test semiconductor lasers with different degrees of deterioration are required. In order to obtain this test semiconductor laser, the semiconductor laser is continuously operated under certain conditions, the emission power and drive current values are monitored, and when a predetermined state of deterioration is reached, the operation is stopped and the semiconductor laser is used. Use as a trial sample. Conventionally, in order to obtain this test sample, there is a problem in that, as is clear from the above explanation, the emission power and drive current value of the semiconductor laser in the operating state must be constantly monitored.

〈発明の目的〉 本発明はこのような従来の問題点に鑑みてなされたもの
であり、その目的とするところは人が常的に停止させ、
半導体レーザの劣化が、それ以上進行するのを防ぐこと
になる0 〈実施例〉 添附図面は本発明の1実施例を示す半導体レーザの評価
回路のブロックダイヤグラムである。
<Object of the Invention> The present invention has been made in view of the above conventional problems, and its purpose is to prevent people from constantly stopping the vehicle.
This will prevent further deterioration of the semiconductor laser. Embodiment The attached drawing is a block diagram of a semiconductor laser evaluation circuit showing an embodiment of the present invention.

図中1は半導体レーザの発光パワーを任意の値に設定す
るだめの可変基準電圧発生器である。2は差動電圧増幅
器で構成される半導体レーザの駆動回路であって、この
出力電圧でトランジスタ5を駆動してトランジスタ5の
コレクタ端子に接続されている半導体レーザ4に電流を
流す。3は半導体レーザ4に接続されたスイッチ素子で
ある07は光電変換系であり半導体レーザ4から出力さ
れたレーザ発光パワーを電気信号に変換するためのもの
である。、この光電変換系7の出力は駆動回路2の差動
電圧増幅器2ヘフイードバツクされている。6はエミッ
タ抵抗である。
In the figure, reference numeral 1 denotes a variable reference voltage generator for setting the emission power of the semiconductor laser to an arbitrary value. Reference numeral 2 denotes a semiconductor laser drive circuit composed of a differential voltage amplifier, which drives a transistor 5 with this output voltage to cause a current to flow through the semiconductor laser 4 connected to the collector terminal of the transistor 5. 3 is a switching element connected to the semiconductor laser 4; 07 is a photoelectric conversion system for converting the laser emission power output from the semiconductor laser 4 into an electric signal. The output of this photoelectric conversion system 7 is fed back to the differential voltage amplifier 2 of the drive circuit 2. 6 is an emitter resistance.

上記符号1〜7で構成される系はいわゆる半導ある。今
、スイッチ素子3がON状態となっているものと仮定し
て上記フィードバック制御系の動作を以下に説明する。
The system constituted by the above-mentioned symbols 1 to 7 is a so-called semiconductor. Now, assuming that the switch element 3 is in the ON state, the operation of the feedback control system will be described below.

可変基準電圧発生器lで決定された電圧に対応して半導
体レーザ4が一定のパワーで発光しているものとする。
It is assumed that the semiconductor laser 4 emits light with a constant power in accordance with the voltage determined by the variable reference voltage generator l.

次に、該半導体レーザ4が劣化等により、同一の駆動電
流ILに対して発光パワーが減少すると出力光の照射さ
れている光電変換系7の出力電圧も減少する。この出力
電圧は駆動回路2へ入力され、従って駆動回路2の差動
電圧増幅器出力は増加してトランジスタ5のペース電圧
が増加する。これに呼応して駆動電流ILが増加し、半
導体レーザ4の発光パワーが減少した分だけ、増加する
ことになる。即ち、この系は可変基準電圧発生器lで定
められた値で半導体レーザ4がレーザ発光を持続する。
Next, when the semiconductor laser 4 decreases in light emission power for the same drive current IL due to deterioration or the like, the output voltage of the photoelectric conversion system 7 irradiated with the output light also decreases. This output voltage is input to the drive circuit 2, so that the differential voltage amplifier output of the drive circuit 2 increases and the pace voltage of the transistor 5 increases. In response to this, the drive current IL increases, and increases by the amount that the emission power of the semiconductor laser 4 decreases. That is, in this system, the semiconductor laser 4 continues to emit laser light at a value determined by the variable reference voltage generator 1.

従って、常時光電変換系7への入力発光パワーは一定と
なるように半導体レーザ4が駆動されまた半導体レーザ
4の劣化は駆動電流ILの増加量で判断できる。
Therefore, the semiconductor laser 4 is driven so that the input light emission power to the photoelectric conversion system 7 is always constant, and the deterioration of the semiconductor laser 4 can be determined by the amount of increase in the drive current IL.

4の駆動回路の出力安定化を達成する原理であるが、こ
れを半導体レーザ4の劣化特性評価回路として利用した
場合には次の如くとなる。劣化基準レベル設定器8であ
る劣化基準レベル電圧を設定してレベルコンパレータ9
の一方の端子へ入力する。またレベルコンパレータ9の
他の入力端子にはトランジスタ5を流れる半導体レーザ
4の駆動電流ILを電圧に変換するために設けたエミッ
タ抵抗6の端子電圧即ちエミッタ抵抗6の抵抗値をRe
とするとRe・ILなる電圧が導入されている。
This is the principle for achieving output stabilization of the drive circuit No. 4, but when this principle is used as a deterioration characteristic evaluation circuit for the semiconductor laser 4, the following will occur. The deterioration reference level voltage which is the deterioration reference level setter 8 is set and the level comparator 9
input to one terminal of The other input terminal of the level comparator 9 is the terminal voltage of the emitter resistor 6 provided for converting the drive current IL of the semiconductor laser 4 flowing through the transistor 5 into a voltage, that is, the resistance value of the emitter resistor 6.
Then, a voltage Re.IL is introduced.

レベルコンパレータ9の出カバ劣化基準しヘル設定器8
からの電圧とエミッタ抵抗6からの電圧を比較し前者が
後者より大きければその出力はLow(低)レベルであ
りその逆の場合はHighC高)レベルとなるように2
値電圧に設定されている。
Level comparator 9 output deterioration standard and health setting device 8
The voltage from the emitter resistor 6 is compared with the voltage from the emitter resistor 6, and if the former is larger than the latter, the output is at the Low level, and vice versa, so that the output is at the HighC level.
The value voltage is set.

レベルコンパレータ9にはフリツプフロツプ回路10が
接続され、レベルコンパレータ9の出力で動作する。こ
のフリップフロップ出力はスイッチ素子3を動作させる
ように接続されている。
A flip-flop circuit 10 is connected to the level comparator 9 and operates based on the output of the level comparator 9. This flip-flop output is connected to operate the switch element 3.

1で設定されたパワーで発光しているものとする。It is assumed that light is emitted with the power set in 1.

半導体レーザ4の駆動電流ILにより抵抗6で発生する
電圧はRe・ILとなっている。長期の連続動作にて供
試半導体レーザ4が劣化してその駆動電流ILが増加す
ると、トランジスタ5のエミッタ電圧(Re @ I 
L)も当然ILに比例して増加してくる。そこで、劣化
基準レベル設定器80レベル設定を電圧R1!IIIL
の初期値よシ予め定めである基準電流値まで劣化したと
きのエミッタ電圧に相当する値にしておくと、半導体レ
ーザ4がその値以上に劣化すると、Re@ILが増加し
て設定電圧以上となりこれがレベルコンパレータ9へ入
力すれ、レベルコンパレータ9の出カバHi g h 
トナって次段に接続されているフリツプフロツプ回路1
0の出力をHighにする。この出力信号を受けてスイ
ッチ素子3は開成され、半導体レーザ4には電流が流れ
なくなる。このとき電圧Re@ILも零とナリレベルコ
ンパレータ9の出力は再びLowとな即ち、劣化基準レ
ベル設定器8によって定められた値まで供試半導体レー
ザ4が劣化すると、自動的に該半導体レーザ4の動作は
停止して、それ以上の劣化進行はなくなる。
The voltage generated at the resistor 6 by the drive current IL of the semiconductor laser 4 is Re.IL. When the test semiconductor laser 4 deteriorates due to long-term continuous operation and its driving current IL increases, the emitter voltage of the transistor 5 (Re @ I
Naturally, L) also increases in proportion to IL. Therefore, the deterioration reference level setter 80 level is set to voltage R1! IIIL
If the initial value of is set to a value corresponding to the emitter voltage when it deteriorates to a predetermined reference current value, then when the semiconductor laser 4 deteriorates beyond that value, Re@IL will increase and exceed the set voltage. This is input to the level comparator 9, and the output of the level comparator 9 is High.
Flip-flop circuit 1 connected to the next stage
Set the output of 0 to High. In response to this output signal, the switch element 3 is opened, and no current flows through the semiconductor laser 4. At this time, the voltage Re@IL also becomes zero and the output of the null level comparator 9 becomes Low again. In other words, when the semiconductor laser 4 under test deteriorates to the value determined by the deterioration reference level setter 8, the semiconductor laser 4 automatically operation will stop and no further deterioration will occur.

〈発明の効果〉 上述のように、半導体レーザは同一の発光パワーで発光
しているとき、その劣化の程度は電流値の増加特性を監
視することにより求められる。
<Effects of the Invention> As described above, when a semiconductor laser emits light with the same emission power, the degree of deterioration can be determined by monitoring the increase characteristic of the current value.

本発明によれば、劣化の程度を予め任意に設定すること
ができ、しかも供試半導体レーザがその値まで劣化する
と自動的にそれ以上の劣化を停止させる。従って人が常
に監視している必要はなく、定められた値まで劣化した
半導体レーザを簡単に入手することができ、劣化解析に
必要となる劣化程度の異った種々の半導体レーザを簡単
に得ることができる。
According to the present invention, the degree of deterioration can be arbitrarily set in advance, and further deterioration is automatically stopped when the test semiconductor laser has deteriorated to that value. Therefore, there is no need for constant human monitoring, and it is possible to easily obtain semiconductor lasers that have deteriorated to a predetermined value, making it easy to obtain various semiconductor lasers with different degrees of deterioration that are required for deterioration analysis. be able to.

【図面の簡単な説明】[Brief explanation of drawings]

添附図面は本発明の一実施例を示す半導体レースイッチ
素子、4・・・半導体レーザ、5・・・トランジスタ、
6・・・エミッタ抵抗、7・・・光電変換系、8・・・
劣化基準レベル設定器、9・・・レベルコノパレータ、
IO・・・フリップフロップ回路。
The attached drawings show a semiconductor laser switch element showing an embodiment of the present invention, 4... semiconductor laser, 5... transistor,
6... Emitter resistance, 7... Photoelectric conversion system, 8...
Deterioration reference level setter, 9... level conoperator,
IO...Flip-flop circuit.

Claims (1)

【特許請求の範囲】[Claims] 1、半導体レーザの発光出力の少なくとも一部を前記半
導体レーザの駆動回路へフィードバックすることにより
前記レーザの発光出力を一定値に保持するフィードバッ
ク系を有する駆動回路において、前記半導体レーザの駆
動電流値と任意に設定可能な基準値とを比較し、両者の
大小関係を判定する比較器と、該比較器の出力信号に応
じて前記半導体レーザへの駆動電流回路を遮断するスイ
ッチ素子と、を備えたことを特徴とする半導体レーザ評
価回路。
1. In a drive circuit having a feedback system that maintains the light emission output of the laser at a constant value by feeding back at least a part of the light emission output of the semiconductor laser to the drive circuit of the semiconductor laser, the drive current value of the semiconductor laser and A comparator that compares a reference value that can be set arbitrarily and determines the magnitude relationship between the two, and a switch element that shuts off a drive current circuit to the semiconductor laser according to an output signal of the comparator. A semiconductor laser evaluation circuit characterized by:
JP1762085A 1985-01-29 1985-01-29 Evaluation circuit for semiconductor laser Pending JPS61174692A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1762085A JPS61174692A (en) 1985-01-29 1985-01-29 Evaluation circuit for semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1762085A JPS61174692A (en) 1985-01-29 1985-01-29 Evaluation circuit for semiconductor laser

Publications (1)

Publication Number Publication Date
JPS61174692A true JPS61174692A (en) 1986-08-06

Family

ID=11948912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1762085A Pending JPS61174692A (en) 1985-01-29 1985-01-29 Evaluation circuit for semiconductor laser

Country Status (1)

Country Link
JP (1) JPS61174692A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0428463U (en) * 1990-07-02 1992-03-06
JPWO2014192267A1 (en) * 2013-05-27 2017-02-23 アンリツ株式会社 Laser therapy device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0428463U (en) * 1990-07-02 1992-03-06
JPWO2014192267A1 (en) * 2013-05-27 2017-02-23 アンリツ株式会社 Laser therapy device

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