JPS6117235A - Production of optical information recording medium - Google Patents

Production of optical information recording medium

Info

Publication number
JPS6117235A
JPS6117235A JP10602385A JP10602385A JPS6117235A JP S6117235 A JPS6117235 A JP S6117235A JP 10602385 A JP10602385 A JP 10602385A JP 10602385 A JP10602385 A JP 10602385A JP S6117235 A JPS6117235 A JP S6117235A
Authority
JP
Japan
Prior art keywords
film
recording medium
information recording
sensitivity
optical information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10602385A
Other languages
Japanese (ja)
Other versions
JPH0451897B2 (en
Inventor
Masao Mashita
真下 正夫
Noburo Yasuda
安田 修朗
Tomoyuki Ishibashi
石橋 友行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP10602385A priority Critical patent/JPS6117235A/en
Publication of JPS6117235A publication Critical patent/JPS6117235A/en
Publication of JPH0451897B2 publication Critical patent/JPH0451897B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24316Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24318Non-metallic elements
    • G11B2007/24328Carbon
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • G11B7/2531Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • G11B7/2533Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins

Abstract

PURPOSE:To provide a titled medium which is provided with high sensitivity and long life by forming a recording layer of a film consisting essentially of Te and contg. 5-40atomic% carbon C. CONSTITUTION:The thin Te film 2 for information recording contg. C is required to be as thick as to provide substantial light reflectivity and to be as thin as not to spoil the sensitivity. About 200Angstrom -1mum thickness is adequate. The thin Te film 2 is obtd. by using Te as a target, and sputtering the target in a gaseous mixture composed of an org. gas contg. C, for example, gaseous CH4 and C2H2 and Ar. The content of C in the Te film can be controlled as desired by the mixing ratio of Ar and CH4(or C2H2); for example, about 40atomic% C can be incorporated into the film when Te1-xCx(H) is designated in the case of Ar/CH4=1. The content of C in a 5-40atomic% range is more preferable.

Description

【発明の詳細な説明】 本発明は光、熱吟のエネルギービームの照射により記録
層に穴もしくは凹部を形成することによって情報を記録
するようにした光学的情報記録媒体に係多、特に法度の
向上及び長寿命化を図った光学的情報記録媒体に関する
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optical information recording medium in which information is recorded by forming holes or recesses in a recording layer by irradiation with light or thermal energy beams, particularly when This invention relates to an optical information recording medium that is improved and has a longer service life.

基板上に形成された薄膜層にエネルギービームを照射し
記録されるべき信号に対応したピット列を形成するよう
にした光学的情報記録媒体において、従来よシ記録薄膜
としてテルル(Te) ’!r使用することが知られて
いる。Te薄膜は、最も低いエネルギーで所望のピラト
ラ形成できる材料のうちの1つで、この種用塗において
は高感度材料として極めて有望である。ここで感度とは
単位面積当9のピット形成に要するエネルギー(mJ/
cd)で定義される。
In an optical information recording medium in which a thin film layer formed on a substrate is irradiated with an energy beam to form a pit train corresponding to a signal to be recorded, tellurium (Te') is conventionally used as the recording thin film. It is known to use r. A Te thin film is one of the materials that can form the desired pyratra with the lowest energy, and is extremely promising as a highly sensitive material for this type of coating. Sensitivity here refers to the energy required to form 9 pits per unit area (mJ/
cd).

しかしながらTeは大気中に放置された場合、酸素や水
分により酸化しやすく、膜表面に酸化物が形成されて感
度が劣化する。たとえば70℃、相対湿度85%の雰囲
気に放置した場合、約5時間で感度が約20チ低下し、
約15時間で約50.チ低下してしまう。とのたTe膜
の酸化を防止するためにTe膜上に有機保護膜をコーテ
ィングする等の手段がとられているが、未だ十分な寿命
は得られていない。
However, when Te is left in the atmosphere, it is easily oxidized by oxygen and moisture, and oxides are formed on the film surface, resulting in deterioration of sensitivity. For example, if left in an atmosphere of 70°C and 85% relative humidity, the sensitivity will drop by about 20 inches in about 5 hours.
Approximately 50.00 in about 15 hours. This results in a decrease in quality. In order to prevent the Te film from being oxidized, measures such as coating the Te film with an organic protective film have been taken, but a sufficient lifespan has not yet been achieved.

本発明はこのような問題点に鑑みなされたもので、高感
度でかつ長寿命の光学的情報記録媒体を提供することを
目的とする。
The present invention was made in view of these problems, and an object of the present invention is to provide an optical information recording medium that is highly sensitive and has a long life.

本発明の光学的情報記録媒体は、Tei主成分とし、炭
素(C)’Ik5〜40原子チ含有する膜によって記録
層を形成したことを特徴とし、これによって高感度と長
寿命とを兼ね備えたものである。
The optical information recording medium of the present invention is characterized in that the recording layer is formed of a film containing Tei as the main component and 5 to 40 atoms of carbon (C)'Ik, thereby achieving both high sensitivity and long life. It is something.

以下図面を参照して本発明の実施例につき詳細に説明す
る。
Embodiments of the present invention will be described in detail below with reference to the drawings.

第1図は本発明の一実施例を示す断面構成図である。FIG. 1 is a cross-sectional configuration diagram showing an embodiment of the present invention.

図において(1)は基板で、本実施例では合成樹脂の1
つであるアクリル板が用いられる。しかしとの他にもプ
ラスチックやガラス基板であってもよく、情報記録の読
み出し方法によって適宜選択し得る。(2)はCを含む
情報記録用Te薄膜で、その厚さは、十分な光反射率を
得る程度に厚く、かつ感度を損なわない程度に薄いこと
が必要で、  200A〜1μm程度が適当である。C
を含む情報記録用Te薄膜(2)は、Teiターゲット
としs”f含む有機ガス例えばCH4やC2H2ガスと
Arとの混合ガス中でスパッタすることにより得られる
。ここでTe膜中のCの含有量はArとCH4(又は0
2H2)との混合比により自由に制御でき、例えばAr
/CH4= 1のときには、 Te1−xcx@と表記
した場合、約40原子チのCi金含有せることができる
が、本発明の光学的記録媒体におけるCの含有量は、後
述する理由により5〜40原子チの範囲内であることが
好ましい。
In the figure, (1) is the substrate, which in this example is made of synthetic resin.
An acrylic board is used. However, other materials may be used, such as plastic or glass substrates, which can be selected as appropriate depending on the method for reading information recording. (2) is a Te thin film containing C for information recording, and its thickness must be thick enough to obtain sufficient light reflectance and thin enough not to impair sensitivity, and approximately 200A to 1 μm is appropriate. be. C
The Te thin film (2) for information recording containing a Tei target is obtained by sputtering in a mixed gas of an organic gas containing s"f, such as CH4 or C2H2 gas, and Ar. Here, the content of C in the Te film is The amount is Ar and CH4 (or 0
2H2) can be freely controlled by adjusting the mixing ratio with Ar2H2).
When /CH4=1, when expressed as Te1-xcx@, about 40 atoms of Ci gold can be contained, but the C content in the optical recording medium of the present invention is 5 to 5 for the reason described later. It is preferably within the range of 40 atoms.

第2図(a)〜(e)はcl含む有機ガスとしてCH4
’!i用い、ガス混合比すなわちA r/CH4vi−
0〜1.0 (0”=1001)と変化させ、1.5m
厚のアクリル基板(1)にc2含有するTe薄膜をスパ
ッタにより形成し、得られ・たTe01程度の記録膜に
ついての緒特性を示したものである。
Figure 2 (a) to (e) show CH4 as an organic gas containing Cl.
'! i, gas mixture ratio i.e. A r/CH4vi-
Change from 0 to 1.0 (0”=1001), 1.5m
A thin Te film containing c2 was formed on a thick acrylic substrate (1) by sputtering, and the characteristics of a recording film of approximately Te01 obtained are shown.

図において横軸はスパッタ中のガス混合比、縦軸は光吸
収%c)(4100%で得られた薄膜の特性値で規格化
した膜形成速度(膜形成速度比)及び感度の逆数比(感
度比)を各々示す。ここで単位体積の膜に吸収される光
エネルギーは、 2nkに比例する。第2図でわかるよ
うに光吸収(、!nk)は混合ガス中のArが増加する
につれて増大するが、膜形成速度及び感度は共に10%
程度の変化におさまっている。そして感度について着目
すると、第2図(C)に示すようにガス混合比の広い範
囲にわたってほぼ等しい値をとっておシ、かつこの値は
、アクリル基板上に400A程度の純Te薄膜を形成し
念場合の感度に相当し、本発明の記録媒体が高感度を有
することを示している。
In the figure, the horizontal axis is the gas mixture ratio during sputtering, and the vertical axis is light absorption %c) (film formation rate (film formation rate ratio) normalized by the characteristic value of the thin film obtained at 4100%) and the reciprocal ratio of sensitivity ( Here, the light energy absorbed by a unit volume of film is proportional to 2nk.As can be seen in Figure 2, the light absorption (,!nk) increases as Ar in the mixed gas increases. increases, but film formation rate and sensitivity are both 10%
The degree of change has subsided. Focusing on the sensitivity, as shown in Figure 2 (C), it has approximately the same value over a wide range of gas mixture ratios, and this value is the same as when a pure Te thin film of about 400A is formed on an acrylic substrate. This corresponds to the sensitivity in a hypothetical case, indicating that the recording medium of the present invention has high sensitivity.

しかしてA r /CH4が0.1(10%)以下の間
すなわちTe膜中へのCの含有量が多くなった場合は第
2図(a)に示すように光吸収の減少が徐々に多くなり
、これに伴って第2図(e)に示すように感度が低下す
る。、またCの含有量が多すぎるとTe−C膜が透明に
近づくためにレーザ光の強度を大きくしなければならな
くなる。このような観点からTe膜中のCの含有量は4
0原子チ以下であることが好ましい。
However, when A r /CH4 is below 0.1 (10%), that is, when the C content in the Te film increases, the light absorption gradually decreases as shown in Figure 2 (a). As a result, the sensitivity decreases as shown in FIG. 2(e). Moreover, if the content of C is too large, the intensity of the laser beam must be increased because the Te--C film approaches transparency. From this point of view, the C content in the Te film is 4
It is preferable that it is 0 atoms or less.

また上述のようにスパッタ法で作成された薄膜は非晶質
であり、多結晶体のTeに比べて記録状態の凹部の形状
がなめらかになるため、情報読み出し時のノイズレベル
を低くおさえるととができる。
In addition, as mentioned above, the thin film created by sputtering is amorphous, and the shape of the recesses in the recorded state is smoother than that of polycrystalline Te, so it is important to keep the noise level low when reading information. I can do it.

第3図は70℃、相対湿度85チの雰囲気中で  ・の
時間経過に対する感度の劣化を、従来のTe単体のもの
と、TeVcCflO〜35原子チ含有する記録膜原子
比含有た図である。本図における感度の劣。
FIG. 3 is a diagram showing the deterioration of sensitivity over time in an atmosphere of 70 DEG C. and relative humidity of 85 degrees Celsius for a conventional recording film containing only Te and a recording film containing TeVcCflO to 35 atoms at an atomic ratio. Poor sensitivity in this figure.

化は、記録に必要なエネルギーの逆数の初期値に対する
変化として表わしてお、Q、Te単体からなる従来の記
録膜、本発明による記録膜共にアクリル基板上に形成さ
れた場合を示す。本図かられかるようにTe単体からな
る記録膜の場合は図中穴で示すように時間経過とと本に
感度が劣化する。これは時間とともに局部的な透明領域
(シミ)が発生するためで、約170時間経過後には全
面にわたって劣化してしまう。
is expressed as a change in the reciprocal of the energy required for recording with respect to the initial value, and shows the case where both the conventional recording film made of Q and Te alone and the recording film according to the present invention are formed on an acrylic substrate. As can be seen from this figure, in the case of a recording film made of Te alone, the sensitivity deteriorates over time as shown by the holes in the figure. This is because local transparent areas (stains) occur over time, and the entire surface deteriorates after about 170 hours.

一方CをIO〜35原子チ含有する・Te薄膜の場合は
、同図中(B)で示すように1000時間経過後もTe
薄膜に見られたようなシミは全く認められず、常にほぼ
一定の感度全保持しておジ、長寿命化を達成しているこ
とがわかる。
On the other hand, in the case of a Te thin film containing IO to 35 atoms of C, as shown in (B) in the same figure, even after 1000 hours, the Te
There are no stains like those seen on thin films, and it can be seen that the sensor maintains almost constant sensitivity at all times, achieving a long lifespan.

第2図(a)〜(C)に示した結果からも明らかなよう
に、C含有量がlO〜35原子チの場合は感度、寿命共
に申し分のない結果が得られた。しかし、前述のように
C含有量が40原子−以上になると感度の低下が徐々に
大きくなシ、一方5原子%以下になると寿命の点でTe
単体の膜に比べて有意差は認められなかった。
As is clear from the results shown in FIGS. 2(a) to 2(C), when the C content was between 10 and 35 atoms, satisfactory results were obtained in both sensitivity and life. However, as mentioned above, when the C content increases to 40 atoms or more, the sensitivity gradually decreases, while when the C content decreases to 5 at% or less, the lifetime decreases due to Te.
No significant difference was observed compared to the single membrane.

上記の例ではCi金含有るTe薄膜の形成法としてCH
42Arに混合してスパッタする方法を示したが、適当
量のc=2含有するTeiターゲットとしてArガス中
でスパッタしても、同様な薄膜を形成することができる
In the above example, CH
Although a method of sputtering by mixing with 42Ar is shown, a similar thin film can also be formed by sputtering in Ar gas using a Tei target containing an appropriate amount of c=2.

第4図は本発明の他の実施例を示したもので。FIG. 4 shows another embodiment of the present invention.

5〜40原子チのCを含有するTe薄膜に記録薄膜と保
護膜の作用を合わせ持たせるようにしたものである。す
なわち図において(1)は1.5m厚のアクリル基板、
(3)はTe膜で、(2)が5〜40原子チのC−i含
有するTe薄膜である。ここでCを含有するTe薄膜(
2)の膜厚は工ooX〜工μmの範囲で選ぶことができ
るが、水や酸素など外気から保護するに十分な厚さと、
感度を損わない程度に薄いことが好ましいため、本実施
例では300^程度としている。また上記C′(i−含
有するTe膜(2)が茶 色の半透明体であるため、T
e膜(3)の膜厚は十分な光反射率を得る程度に厚く、
感度を損わない程度の厚さが必要で。
A Te thin film containing 5 to 40 atoms of C is made to function as both a recording thin film and a protective film. In other words, in the figure (1) is a 1.5m thick acrylic substrate,
(3) is a Te film, and (2) is a Te thin film containing 5 to 40 atoms of Ci. Here, a Te thin film containing C (
The film thickness for 2) can be selected within the range of 0.000 to 0.000 μm, but it must be thick enough to protect from outside air such as water and oxygen.
Since it is preferable that the thickness be as thin as possible without impairing the sensitivity, the thickness is set to about 300^ in this embodiment. In addition, since the Te film (2) containing C'(i-) is a brown translucent body, the T
The film thickness of the e-film (3) is thick enough to obtain sufficient light reflectance.
It needs to be thick enough not to impair sensitivity.

100八〜0.5μmの範囲で選ぶことができる。本実
施例ではTe膜(3)の膜厚は4ooAとしている。
It can be selected within the range of 1008 to 0.5 μm. In this example, the thickness of the Te film (3) is 4ooA.

Q(4: Ar = 1 : 4の混合ガス中でスパッ
タして得られ念膜厚300AcICを含有するTe膜(
2)の感度はアクリル基板上の400 ATe膜(3)
の感度とほぼ等しい。また本実施例に示された構造の記
録媒体に光エネルギーによって記録する場合は、Cを含
有するTe膜(2)及びその下のTe膜(3)は同時に
蒸発し、穴もしくは凹部が形成される。
Q(4: Te film containing AcIC with a film thickness of 300 obtained by sputtering in a mixed gas of Ar = 1:4 (
The sensitivity of 2) is 400 ATe film on acrylic substrate (3)
almost equal to the sensitivity of Furthermore, when recording is performed using optical energy on a recording medium having the structure shown in this example, the Te film (2) containing C and the Te film (3) underneath are simultaneously evaporated and holes or recesses are formed. Ru.

先に説明したように本発明による5〜40原子チのc=
2含むTe膜(2)は、 Te単体の膜に比べて水や酸
素などによる酸化が極めて少ないため、本′実施例にお
けるCi含むTe膜(2)はTe膜(3)の保護膜とし
ても有効に作用する。従って従来のものに比べて感度の
劣化なしに寿命す舊しく長くすることができる。
As explained above, c= of 5 to 40 atoms according to the present invention
The Te film (2) containing Ci in this example can also be used as a protective film for the Te film (3) because it is extremely less oxidized by water, oxygen, etc. than a film containing only Te. Works effectively. Therefore, compared to the conventional type, the life span can be significantly extended without deterioration of sensitivity.

第5図(a) 、 (b)は本発明の更に他の実施例を
示したもので、基板がアクリル等のプラスチックで形成
された合成樹脂基板を用いた場合に基板側から侵透して
くる水分等による劣化やプラスチック中の未反応モノマ
ー、不純物、添加剤等が基板上の記録膜と反応して生ず
る記録膜の劣化を防止する目的として、基板と記録膜と
の間にTei主体としCを含む換金形成した例である。
FIGS. 5(a) and 5(b) show still another embodiment of the present invention, in which when the substrate is a synthetic resin substrate made of plastic such as acrylic, there is In order to prevent deterioration of the recording film caused by moisture, etc., and deterioration of the recording film caused by unreacted monomers, impurities, additives, etc. in the plastic reacting with the recording film on the substrate, a Tei-based film is placed between the substrate and the recording film. This is an example of cash conversion including C.

すなわち第5図において(1)は厚さ1.5 tran
のプラスチック基板、(2)はTei主体とし5〜40
原子−の〇を含む膜、(3)はTe、Bi等の金属薄膜
である。ここでCを含有するTe膜(2)の膜厚は数l
OO^〜数100 OAの範囲で選択できるが、100
OA以下であることが好ましい。
That is, in FIG. 5, (1) has a thickness of 1.5 tran
plastic substrate, (2) is mainly made of Tei and 5 to 40
The film containing the atom - (3) is a metal thin film of Te, Bi, etc. Here, the thickness of the Te film (2) containing C is several liters.
You can select from OO^ to several 100 OA, but 100
It is preferable that it is OA or less.

本図に示す構成は記録層側が大気にふれない構造の記録
媒体に基板側からエネルギービームを照射する方式にお
いて使用することができ、このとき前述のようにC′f
:含有するTe膜(2)′ft高感度の記録膜として利
用できるだけでなく、この膜(2)は基板(1)との付
着も強固でかつ物理的にも非常に安定なため基板(1)
全侵透してくる水や酸素など、あるいは基板(1)内の
未反応モノマー、不純物、添加物、基板上に残った接着
剤等の異物に対する保護膜としても有効に作用する。
The configuration shown in this figure can be used in a system in which an energy beam is irradiated from the substrate side to a recording medium whose recording layer side is not exposed to the atmosphere.
: Containing Te film (2)'ft Not only can it be used as a highly sensitive recording film, but this film (2) also has strong adhesion to the substrate (1) and is very physically stable. )
It also acts effectively as a protective film against foreign substances such as completely penetrating water and oxygen, unreacted monomers, impurities, additives in the substrate (1), and adhesives remaining on the substrate.

第6図は本発明の更に他の実施例を示したものである。FIG. 6 shows still another embodiment of the present invention.

図において(1)は1.5瓢厚のアクリル基板、(2)
はCps〜40原子チ含有するTe膜、(3)はTe膜
、(4)は低熱伝導物質層である。ここでc2含有する
Te膜(2八Te膜(3)の膜厚は第5図で示したもの
と同じであシ、低熱伝導物質層(4)の膜厚はxooi
〜10μmの範囲で適宜選択することができる。低熱伝
導物質層(4ンはアクリル基板(1ン全通して外気から
浸透してくる水分等を防止するために設けられたもので
、物理的、化光的に安定な、例えば酸化テルル膜(Te
−0) k用いることができる。しかし上述したように
Cを含むTe膜も熱伝導率が低くかつ物理化学的に安定
であるため、このTe−C膜を低熱伝導物質層として用
いることもできる。すなわち、この場合は、Te膜(3
)f Te −C膜(2) 、 +4) ;Cよって挾
み込んだ構造となp、これら3層で記録層を形成すると
共にTe−C膜+2) 、 (4)が保護膜として有効
に作用する。
In the figure, (1) is a 1.5-inch thick acrylic board, (2)
is a Te film containing Cps~40 atoms, (3) is a Te film, and (4) is a low thermal conductive material layer. Here, the film thickness of the c2-containing Te film (28Te film (3)) is the same as that shown in FIG. 5, and the film thickness of the low thermal conductive material layer (4) is xooi
The thickness can be appropriately selected within the range of ~10 μm. A low thermal conductivity material layer (4th layer is an acrylic substrate (1 layer is provided to prevent moisture from penetrating from the outside air through the entire surface), and is made of a material that is physically and photochemically stable, such as a tellurium oxide film ( Te
-0) k can be used. However, as described above, since the Te film containing C also has low thermal conductivity and is physicochemically stable, this Te--C film can also be used as a low thermal conductive material layer. That is, in this case, the Te film (3
) f Te-C film (2), +4); C forms a sandwiched structure, and these three layers form a recording layer, and the Te-C film +2), (4) is effective as a protective film. act.

第7図(a) 、 (b) 、 (C)は本発明の更に
他の実施例を示すもので、ゴミや傷を防ぐために有機保
護層を設けた例である。すなわち第7図fa) 、 (
b) 、 (C)において(1)は基板、(2)はCを
5〜40原子チ含有するTe膜%(3)はTe膜、(4
)は低熱伝導率物質層であ!0.f5)が有機保護膜で
ある。この有機保護膜(5)は1μm〜10■の膜厚を
有し、塗布によって形成でき、その材料とレギ例えば紫
外線硬化形樹脂が使用できる。
FIGS. 7(a), (b), and (C) show still another embodiment of the present invention, in which an organic protective layer is provided to prevent dust and scratches. In other words, Fig. 7 fa), (
b) In (C), (1) is the substrate, (2) is a Te film containing 5 to 40 atoms of C, (3) is a Te film, (4
) is a layer of material with low thermal conductivity! 0. f5) is an organic protective film. This organic protective film (5) has a film thickness of 1 .mu.m to 10 .mu.m and can be formed by coating, and its material and resin, such as ultraviolet curing resin, can be used.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す断面構成図、第2図f
a)〜fc)は第1図に示した記録媒体のガス混合比に
対する緒特性を示す図で[a)は光吸収v+(b)は膜
形成速度比e、(C)は感度比全各々示す図、第3図は
第1図に示した記録媒体と従来の記録媒体との寿命につ
いての比較図、第4図、第5図、第6図、第7図(a)
〜(C)は各々本発明の他の実施例を示す図である。 +1) ・・・基板、+2) ・−Te −C膜* +
3)・Te膜、(4)・・・低熱伝導率物質層、(5)
・・・有機保護膜。 (7317)代理人 弁理士則近憲佑(ほか1名); 
  第1図 疋 第2図 第4図 第5図
Fig. 1 is a cross-sectional configuration diagram showing one embodiment of the present invention, Fig. 2 f
a) to fc) are diagrams showing the characteristics of the recording medium shown in Fig. 1 with respect to the gas mixture ratio. [a] is the light absorption v + (b) is the film formation speed ratio e, and (C) is the sensitivity ratio, respectively. Figure 3 is a comparison diagram of the lifespan of the recording medium shown in Figure 1 and a conventional recording medium, Figures 4, 5, 6, and 7 (a).
-(C) are diagrams each showing other embodiments of the present invention. +1) ...Substrate, +2) -Te -C film* +
3) Te film, (4)...Low thermal conductivity material layer, (5)
...Organic protective film. (7317) Agent: Patent attorney Norichika Kensuke (and 1 other person);
Figure 1 Figure 2 Figure 4 Figure 5

Claims (4)

【特許請求の範囲】[Claims] (1)テルルをターゲットとして、炭化水素ガス中で若
しくは炭化水素ガス及び希ガスの混合ガス中でスパッタ
リングにより基板上にテルルを主成分とし、5乃至45
原子パーセントの炭素を含有する膜を形成し、該膜にエ
ネルギービームを照射して穴もしくは変形部を形成する
ことを特徴とする光学的情報記録媒体の製造方法。
(1) Using tellurium as a target, sputtering is performed in a hydrocarbon gas or a mixed gas of a hydrocarbon gas and a rare gas to make tellurium the main component on the substrate, and the
1. A method for producing an optical information recording medium, which comprises forming a film containing atomic percent carbon and irradiating the film with an energy beam to form holes or deformed portions.
(2)基板はガラスもしくは合成樹脂であることを特徴
とする特許請求の範囲第1項記載の光学的情報記録媒体
の製造方法。
(2) The method for manufacturing an optical information recording medium according to claim 1, wherein the substrate is made of glass or synthetic resin.
(3)膜は非晶質であることを特徴とする特許請求の範
囲第1項記載の光学的情報記録媒体の製造方法。
(3) The method for manufacturing an optical information recording medium according to claim 1, wherein the film is amorphous.
(4)膜の厚さは200Å乃至1μmであることを特徴
とする特許請求の範囲第1項記載の光学的情報記録媒体
の製造方法。
(4) The method for manufacturing an optical information recording medium according to claim 1, wherein the film has a thickness of 200 Å to 1 μm.
JP10602385A 1985-05-20 1985-05-20 Production of optical information recording medium Granted JPS6117235A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10602385A JPS6117235A (en) 1985-05-20 1985-05-20 Production of optical information recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10602385A JPS6117235A (en) 1985-05-20 1985-05-20 Production of optical information recording medium

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP56049392A Division JPS5933320B2 (en) 1981-04-03 1981-04-03 optical information recording medium

Publications (2)

Publication Number Publication Date
JPS6117235A true JPS6117235A (en) 1986-01-25
JPH0451897B2 JPH0451897B2 (en) 1992-08-20

Family

ID=14423045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10602385A Granted JPS6117235A (en) 1985-05-20 1985-05-20 Production of optical information recording medium

Country Status (1)

Country Link
JP (1) JPS6117235A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0335275A2 (en) * 1988-03-31 1989-10-04 Kabushiki Kaisha Toshiba Information storage medium
JPH0779079A (en) * 1993-09-09 1995-03-20 Nec Corp Ceramic multilayer wiring board

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0335275A2 (en) * 1988-03-31 1989-10-04 Kabushiki Kaisha Toshiba Information storage medium
JPH0779079A (en) * 1993-09-09 1995-03-20 Nec Corp Ceramic multilayer wiring board

Also Published As

Publication number Publication date
JPH0451897B2 (en) 1992-08-20

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