JPS589232A - Optical information recording medium - Google Patents
Optical information recording mediumInfo
- Publication number
- JPS589232A JPS589232A JP56107034A JP10703481A JPS589232A JP S589232 A JPS589232 A JP S589232A JP 56107034 A JP56107034 A JP 56107034A JP 10703481 A JP10703481 A JP 10703481A JP S589232 A JPS589232 A JP S589232A
- Authority
- JP
- Japan
- Prior art keywords
- film
- recording medium
- optical information
- information recording
- recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24326—Halides (F, CI, Br...)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24328—Carbon
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
Abstract
Description
【発明の詳細な説明】
本発Ｉｊ１１は光、熱等のエネルギービームの照射ミー
より配録層に穴もしくは凹部な形成することＣ二よって
情報を記録す、るよう−二した光学的情報記録媒体に係
り、峙−二感度の向上及び長寿命化を図った光学的情報
記録媒体Ｃ二関する０
基板上に形成された薄膜層６：エネルギービームを照射
し、記録されるべき信号に対応し九ピット、列を形成す
るようＩニジた光学的情報記録媒体区二おいて、従来よ
り低融点金属記録薄族としてビスマス（Ｂｓ）を使用す
ることが知られている。Ｂ１１１！１４は最も低いエネ
ルギーで所望のビットを形成できる材料であり、この種
用途Ｉ：おいては高感度材料として極めて１望である。DETAILED DESCRIPTION OF THE INVENTION The optical information recording device 11 of the present invention records information by forming holes or recesses in the recording layer by irradiating energy beams such as light, heat, etc. Regarding media, optical information recording medium C2 with improved sensitivity and longer life.0 Thin film layer 6 formed on the substrate: irradiated with an energy beam to correspond to the signal to be recorded. It is conventionally known to use bismuth (Bs) as a low melting point metal recording thin group in optical information recording media in which nine pits are formed in a row. B111!14 is a material that can form a desired bit with the lowest energy, and is extremely desirable as a high-sensitivity material in this type of application I:.
ここで感度とは単位向積尚りのビット形成（二要するエ
ネルギー（ｍＪ□）で足義される。Sensitivity here is defined as bit formation (2 required energy (mJ□)) for unit direction product.
しかしながらＢＢは大気中に放置され九場合、酸系や水
分により酸化され透明になる度合が早い。However, if BB is left in the atmosphere, it will be oxidized by acids and moisture and become transparent quickly.
記録薄膜として使用する場合、膜厚＃／１７ｏｏ！位と
極めて薄いため、ビスマス薄膜の酸化で生じた透明度増
加６二基因する膜のＭ度劣化、出力減少は着るしい。即
ち、膜が酸化されると融解、蒸発温度が上昇するため感
度劣化となり、透明化する丸め反射率又は透過革゛が情
報記録されるビットの有無ミー敏７ｉ＆Ｃ対応しなくな
ってしまうためである。たとえは７０℃相対湿度８５９
６の雰囲気Ｃ；放置した場合、約５時間で感度が約２０
Ｓ低下し、約１５時間で約５０ Ｓ低下してしまう。When used as a recording thin film, the film thickness is #/17oo! Because the bismuth thin film is extremely thin, the oxidation of the bismuth thin film increases its transparency, which is likely to cause deterioration of the film's M degree and decrease its output. That is, when the film is oxidized, the melting and evaporation temperature increases, resulting in deterioration of sensitivity, and the rounded reflectance or transmission ratio that becomes transparent no longer corresponds to the presence or absence of information recording bits. For example, 70℃ relative humidity 859
Atmosphere C of 6: If left for about 5 hours, the sensitivity will decrease to about 20
S decreases, and it decreases by about 50 S in about 15 hours.
このためＢｉ換の酸化防止のために、種々の防止策がと
られている。最も有効な手段は無機ガラス体でおおう事
だが、プロセスが複雑であり高価なため実用化されてい
な（ゝＯ
有機ＩＩ脂、例えば透明プラスチックにすれに１安値で
あり、熱伝導率もガラスの匈のため感度も２倍となるた
め、プラスチックを如何ｆ′、使いこなすかが、現状の
鰍１点稠目の１つとなっている０ここでプラスチック６
二は決定的な欠陥がある０即ち、大気中の酸素、水分を
自由に通過させてしまうことであり、上述のＢｉＩＩ膜
の基板としては使えないということである。Therefore, various preventive measures have been taken to prevent oxidation of Bi conversion. The most effective method is to cover it with an inorganic glass material, but it has not been put to practical use because the process is complicated and expensive. Since the sensitivity is doubled due to the flame, one of the key points of the current situation is how to use plastic effectively.0Here, plastic 6
The second problem is that it has a decisive defect, that is, it allows oxygen and moisture in the atmosphere to pass through freely, and it cannot be used as a substrate for the BiII film mentioned above.
本ＩＡ明は、この問題点Ｉ：ｔＩｋみなされたもので、
有ｅ！ｗ脂基板を使用しながら、菖感度でかつ訳寿命の
光学的情報記録媒体を提供することを目的とする。This IA is concerned with this problem I:tIk,
Yes! The object of the present invention is to provide an optical information recording medium that has excellent sensitivity and a long life span while using a wax substrate.
□ 本発明の光学的情報記録媒体は、記録膜な縦木（０
）並びに弗素（Ｐ）を含有する低融点金属又は低融点金
属合金のＩｌ＃膜（−よって形成したことを特徴として
おり、炭化弗素基（−０ｍ１Ｆｓ ）も含有している薄
膜も対象とし、これによって高ＩＩ＆度と長寿命とを鴬
ね備えたものである０゛低融金属としては、膜形成技術
並びに高感度からみて、２５℃−６００℃１；融点をも
つ金属並びに合金、例えａ’ ０４ Ｉａｅ ８ｓ ｅ
ｚ語＊ Ｐｂｅ ＢＢ等の単体並び１二１１ｂ等の合金
である０以下、図面な番照−二して本発明の実施例１二
つき詳細に説明する〇
＃！１図は本発明の一＊ｍ例を示す断藺構成図である。□ The optical information recording medium of the present invention has a recording film vertical tree (0
) and Il# films of low melting point metals or low melting point metal alloys containing fluorine (P) (-), and also target thin films containing fluorine carbide groups (-0m1Fs). From the viewpoint of film formation technology and high sensitivity, metals and alloys with a melting point of 25°C to 600°C, such as a' 04 Iae 8s e
z words * Pbe BB etc. single elements 12 11b etc. alloys 0 and below, refer to the drawings - 2 Embodiment 1 of the present invention 2 〇#! FIG. 1 is a schematic diagram showing a 1*m example of the present invention.
因において（１）は基板で本実施例では合成樹脂の１つ
であるアクリル板を用いたｏしかし他のどの様なプラス
チック板、又はガラス板であっても作用効果は同じであ
り、ただ情報記録の瞥き込み読み出し方法−一よって適
宜選択すれｄ嵐いｏ（８）ｔｉ−Ｃ，Ｐを含む情報記録
用低融点金□属並び−二金属合金膜でありその厚゛さは
十分な光反射率を得る＠度１：厚く、かつ感度を損なわ
ない程度に薄いことが必要で％２００Ｋ −１μ重程度
が７′当である。In this case, (1) is the substrate, and in this example, an acrylic plate, which is one of the synthetic resins, was used. However, the effect is the same even if any other plastic plate or glass plate is used, and the information is simply A method for reading out records by looking at them - Therefore, it is necessary to select an appropriate method. Obtaining light reflectance @degree 1: It is necessary to be thick and thin enough not to impair sensitivity, and a weight of about %200K - 1μ is 7'.
我々社低融点金属としてビスマス（１４）を遺び、Ａｒ
ガスとＣＩＦ４ガスの混合ガス内（１０４テｅｒｒ ）
で、ルツボ又はポートε＝入れたＢｉを加熱蒸発させ、
基板と蒸発源との関ｌ；はあらかじめ電界を加えてガス
をイオン化しておくと、基板面ＣＢｉと０と１と（ＯＦ
ｍｈの混合した膜が得られる。いわゆる反応性イオンプ
レテ４ング法で形成したが、膜中００と７との含有量は
Ａｒとｃｐ４ガスとの混合比、並びＣ；電界強度で制御
でき、例えば、ムｆ１０ＩＦ４ ＝ １の混合比、かつ
、約５０−ｖのイオンを与えると、約２０原子−〇〇と
約３０原子−の１を含有させた膜を得ることが・できる
。膜厚は蒸着時間をかえること仁よって得られる。膜の
光学定数は０と１との含有量Ｃ−よって異なるが、情報
記費用として活用するＣ：は、反射率ならびａ；消衰係
数−二制限があり、我々の実験結果で轄前記の蒸着条件
で約１ｏｏｏ Ｘの膜厚の時に最良の膜が得られた０こ
の条件で作成した膜拡非島質であり、多結晶Ｂｉ ｍｌ
Ｃ比べて、記録状態のビット周辺エッチ部がなめらか
となり情報読み出し時のノイズレベルを低くおさえるこ
とができる。We left Bismuth (14) as a low melting point metal, and Ar
In a mixed gas of gas and CIF4 gas (104 terr)
Then, heat and evaporate the Bi put into the crucible or port ε,
For the relationship between the substrate and the evaporation source, if an electric field is applied in advance to ionize the gas, the substrate surface CBi and 0 and 1 (OF
A mixed film of mh is obtained. Although it was formed by a so-called reactive ion plating method, the content of 00 and 7 in the film can be controlled by the mixing ratio of Ar and cp4 gas, and the electric field strength. For example, the mixing ratio of f10IF4 = 1, In addition, by applying ions of about 50-v, it is possible to obtain a film containing about 20 atoms -○ and about 30 atoms -1. The film thickness can be obtained by changing the deposition time. The optical constant of the film differs depending on the content of 0 and 1, C:, which is used as an information recording cost, has two limitations: reflectance and a; extinction coefficient. The best film was obtained when the film thickness was about 1 ooo x under the vapor deposition conditions.
Compared to C, the etched area around the bit in the recorded state is smoother, and the noise level when reading information can be suppressed to a lower level.
第２図Ｆ１７０℃、相対湿度８ｓ哄の雰囲気中での時間
経過１；対する感度の劣化を、従来のＢＢ単体のものと
本、発明のものとで比較した図である０本図−二おける
感度の劣化轄、記ａＳ二必要なエネルギーの逆数の初期
値ｌ二対する変化として表わしておりｓ Ｂｔ単体から
なる従来の記舜膜一本発明６二よる記録展共１ニアクリ
ル基板上ｇ二形晟された場合を示す。Figure 2 is a diagram comparing the deterioration of sensitivity with respect to the conventional BB alone, the present invention, and the invention in the time course in an atmosphere of 170°C and relative humidity of 8 seconds. The deterioration of sensitivity is expressed as a change in the reciprocal of the required energy with respect to the initial value l. Indicates a case where the
本図かられかるようにＢ＝単体からなる記録膜の場合は
、図中（ム）で示すようＣ；時間経過とともに感度が劣
化する。これは時間とともＣ：局部的な透明領域（シミ
）が発生する丸めで約１７０時間鮭通後直二は全面にわ
たって劣化してしまう。As can be seen from this figure, in the case of B=a recording film consisting of a single element, C: the sensitivity deteriorates over time as shown by (m) in the figure. This is due to the fact that C: Local transparent areas (stains) occur over time, and after passing the salmon for approximately 170 hours, the surface deteriorates over the entire surface.
一方、本発明Ｃ二よる０と１を含有するＳ＝薄薄膜場合
は、同図中（Ｂ）で示す上う１二１０００時間経過後も
Ｂｉ薄膜８：見られた様なシミは全く認められず、常に
はソ一定の感度を保持しており、長寿命化を達成してい
ることがわかる。On the other hand, in the case of the S = thin film containing 0 and 1 according to the present invention C2, no stains as seen in the Bi thin film 8 were observed even after 1000 hours as shown in (B) in the same figure. It can be seen that the sensor always maintains a constant sensitivity and has a long service life.
以上述べた様ｌ二本発明によるＣと１とを含有するＢ１
薄膜を用いた配録媒体では優れた感度と非常直−長い寿
命を得る仁とが出来る。但し、５ａｔ％以下のＣ含有量
膜ではＢｉｇとの有意義はみられず；また４０αｔチ以
上では感度の低下がみられた◇又、５ａｔ％以下の１含
有量膜では感−の低下とカリ、４０ａｔチ以上では膜の
反射率が低下し、記銖用薄膜としては不適当であった。As described above, B1 containing C and 1 according to the present invention
A recording medium using a thin film has excellent sensitivity and extremely long life span. However, for films with a C content of 5 at% or less, no significant difference with Big was observed; and for films with a C content of 40 αt or more, a decrease in sensitivity was observed. , 40at or more, the reflectance of the film decreased, making it unsuitable for use as a recording thin film.
上記の例でｆｉ ＡｙガスとＯ’Ｆ４ガス中のＢｉのイ
オングレーティングによる薄膜形成法についてのべた０
従って膜内１：Ｃと１とがまったく別個Ｃ；存在してい
るわけではない。ＯＦ４ガスは電界解離により０７９
（ラジカｋ ） ＯＦｍ （９シカｘ）ａｙ（ラジカル
）セしてＣと１のラジカル基１：順次分解しており、そ
ζｌ：Ｂｉ原子が介在して、任意のｏｍｙｓ基とＢｉと
が重合してネットを形成する◇従って形成され九膜は非
結晶であり、ラマン散乱、示差熱分析。In the above example, the thin film formation method using Bi ion grating in fiAy gas and O'F4 gas is described. Therefore, 1:C and 1 in the film do not exist completely separately. OF4 gas becomes 079 due to electric field dissociation.
(radical k) OFm (9 deer x) ay (radical), C and 1 radical group 1: decomposes sequentially, and then ζl: Bi atom intervenes, and any omys group and Bi polymerize ◇Therefore, the nine films formed are amorphous and can be analyzed by Raman scattering and differential thermal analysis.
赤外線吸収解析等の結果からも結論出来る。このＢａと
０と１と０１ｍ１ＦｓとＩ：よる半有機的非晶質構造の
ためＢｉ単体膜と同一の高感度特性をもち、酸化となる
タングリングポンド（未結合基）が存在しまいため、長
寿命特性をもつむととなる。This conclusion can also be drawn from the results of infrared absorption analysis, etc. Due to the semi-organic amorphous structure of Ba, 0, 1, 01m1Fs and I:, it has the same high sensitivity characteristics as a single Bi film, and because there are tangling ponds (unbonded groups) that become oxidized, It also has life characteristics.
この様な膜の形成は反応性イオンブレーティングだけで
形成されるものではないｏ Ｂｉ膜を中心とすれば、ル
ツｌの改良でイオンクラスター法で可能であり％ Ｂｓ
ＦＳｅ Ｂ＆ｅＬｓ等のガスと、Ｈ富とＯＦ４ガス等の
キャリアガ′スとを反応させ膜を形成させるプラズマ重
合法、そこＭ：電場を加えたプラズマＣＶＤ法等でも形
成できる。Ｂｊは２７１℃と低融点のためスパッタ等は
使用できないが、２亀（３１９℃）Ｏｄ（３２０℃）等
はムデガスとＯＦ４ガスとの混合ガス内の反応性スパッ
ター法で膜を形成で７きる。又、ＢｉＢｌｌｌＴ （５
８５℃）、ＩｎＢｋ （５３５℃）等の金属合金も低融
点として知られ、板材となるため、ムｒガスとＯＦ４ガ
スとでの反応性スパッタリングで膜を形成−’ｑ＠、本
発明の主旨と同一性能をもった膜を形成させることは可
能である。Formation of such a film cannot be achieved only by reactive ion blating. If the film is mainly made of Bi, it is possible to use the ion cluster method with an improvement of Ruth's method.
It can also be formed by a plasma polymerization method in which a gas such as FSe B&eLs is reacted with a carrier gas such as H-rich and OF4 gas to form a film, or a plasma CVD method in which an electric field is applied. Since Bj has a low melting point of 271°C, sputtering cannot be used, but films such as 2Kame (319°C) and Od (320°C) can be formed by reactive sputtering in a mixed gas of Mude gas and OF4 gas. . Also, BiBlllT (5
Metal alloys such as InBk (85℃) and InBk (535℃) are also known to have low melting points and can be used as plate materials, so a film can be formed by reactive sputtering with Mur gas and OF4 gas. It is possible to form a film with the same performance.
本発明の光学的情報記録媒体は１ｐφ以下ｌニジ埋った
レーザ光に敏感５二作用するため微細なパターンを任意
感二形成できるという性質をもつ。この性質を利用した
他の用い方も可能である。たとえば、ＩＣ用として使わ
れているフォトレジスト的Ｃ；使用できる。現在のフォ
トレジストはウエットプＩセスを必要とするが１本発明
の膜を用いれに１ ドライプロセスですむという大きな
利点がある。又、水、湿気傷二強い事を利用して、各種
部品の保躾層として使える。例えば、従来の情報記骨膜
であるＴ−膜の保映展として、ＩＣ等の保饅層として、
ダイオードのｐ−ｓ接合面保饅層等として、又、絶縁層
としてＩＣ用多層配線の絶縁層、電気的絶縁層等として
使用できる。The optical information recording medium of the present invention has the property of being sensitive to laser beams buried within 1 pφ or less, so that it can form fine patterns arbitrarily. Other uses utilizing this property are also possible. For example, photoresist C used for ICs can be used. Current photoresists require a wet process, but the film of the present invention has the great advantage of requiring only a dry process. Also, since it is resistant to water and moisture damage, it can be used as a protection layer for various parts. For example, as a reflection of the T-membrane, which is the conventional information storage periosteum, as a protective layer for IC, etc.
It can be used as a p-s junction surface protection layer of a diode, and as an insulating layer of multilayer wiring for IC, an electrical insulating layer, etc.
第１図は本発明の実施例を示す断面構成−１亀２図は第
１図に示した配録媒体と従業の配録媒体との寿命Ｃ；つ
いての比較図である。
１・一基板 ２＝Ｂｉ−０−１膜代理人弁理士
則 近 電 佑
＃１か１名
手続補正書（自発）
酊５ケ８．八８
１、特許庁長官 若 杉和 大股
１、事件の表示
昭和５６年特願第１０７０３４号
２、 発明の名称
光学的情報配置媒体
３、補正をする者
事件との関係 特許出願人
（３０７）東東芝浦電気株式会社
４６代理人
〒１００
東京都千代田区内幸町１−１−６
東京芝浦電気株式会社東京事務所内
明細書の［特許請求の範′Ｓ−の欄
及び「発明の詳細な説明」の欄
６、補正の内容
（１） 特許請求の範囲を別紙のとうり補正する〇（
２） 明細書簡２頁ｔＩＩＥ９行目の「凹部」を「例
えけ凹部・等の費形部」と訂正する。
以上
特許請求の範囲
（１）基板上に記録膜を形成し、前記紀―膜にエネルギ
ービームを照射し、穴もしくは皇！！−を形成して情報
を記鍮する光学的配置用部材において、前記記録膜が低
融点金属及び炭素並びに弗素を有することを特徴とする
光学的情報記録媒体０
（２）基板はガラスもしくは合成樹脂であることを特徴
とする特許請求の範囲第１現記戦の光学的情報記録媒体
。
（３）記録膜は２５℃〜６００℃間の融点をもつ金属な
らびに金属合金を含むことを特徴とする特許請求の範囲
第１項記載の光学的情報記録媒体。
（４）記録膜は炭化弗素基な含むことを特徴とする特許
請求の範囲第１項記載の光学的情報記録媒体。
（５）記録膜は非晶質であることを特徴とする特許請求
の範囲第１項記載の光学的情報記録媒体。
（６）記録膜中の炭素の含有量は５〜４Ｇ原子パーセン
ト、弗素の含有量は５〜４０原子パーセントであること
を特徴とする特許請求の範囲第１項記載の光学的情報記
録媒体。
（７）記録膜の厚さは２００λ乃Ｍｌ／ＩＩｍであるこ
とを特徴とする特許請求の範囲第１現記−の光学的情報
記録媒体。FIG. 1 is a cross-sectional configuration showing an embodiment of the present invention. FIG. 1 is a comparison diagram of the lifespan C of the recording medium shown in FIG. 1 and the employee's recording medium. 1.One board 2=Bi-0-1 membrane agent patent attorney
Rule Kinden Yu #1 or 1 person procedural amendment (voluntary) Drunkenness 5 cases 8. 88 1. Commissioner of the Japan Patent Office Wakasugi Kazu Omata 1. Indication of the case 1982 Patent Application No. 107034 2. Name of the invention Optical information storage medium 3. Person making the amendment Relationship to the case Patent applicant (307 ) Tokyo Toshibaura Electric Co., Ltd. 46 Agent Address: 1-1-6 Uchisaiwai-cho, Chiyoda-ku, Tokyo 100 Tokyo Shibaura Electric Co., Ltd. Tokyo Office ” Column 6, Contents of amendment (1) Amend the scope of claims as attached.〇(
2) Correct "recess" in line 9 of page 2, tIIE of the specification letter to "example recess, etc.". Claims (1) A recording film is formed on a substrate, and an energy beam is irradiated onto the film to form a hole or an image. ! - An optical information recording medium for recording information by forming an optical information recording medium 0, characterized in that the recording film contains a low melting point metal, carbon, and fluorine. (2) The substrate is glass or synthetic resin. Claim 1: An optical information recording medium according to the present invention. (3) The optical information recording medium according to claim 1, wherein the recording film contains a metal or metal alloy having a melting point between 25°C and 600°C. (4) The optical information recording medium according to claim 1, wherein the recording film contains a fluorine carbide group. (5) The optical information recording medium according to claim 1, wherein the recording film is amorphous. (6) The optical information recording medium according to claim 1, wherein the recording film has a carbon content of 5 to 4 G atomic percent and a fluorine content of 5 to 40 atomic percent. (7) The optical information recording medium according to claim 1, wherein the thickness of the recording film is 200λ to Ml/IIm.
Claims (1)
ネルギービームな照４射し、穴もしくは凹部を形成Ｅ７
て情報を記録する光学的記録用部材５二勲いて、１’Ｑ
記記録換が低融点金属及び員−並びに弗素なＭすること
を特徴とする光学的情報記録媒体。 （２）基板はガラスもしくは合成樹脂であることを特徴
とする特許請求の範囲ｍ１項記載の光学的情報記録媒体
。。 （Ｂｌ 記ｉ＆躾は２５℃〜６００℃間の融点をもつ
金属な（６）記録膜中の炭素の含有量は５〜４０原子パ
ーセント、弗素の含有量は５〜４０原子パーセントであ
ることを特徴とする特許請求の範囲第１項記載の光学的
情報記録媒体。 （７）記録膜の＃Ｌセ嬬２００！乃至１μｍであること
を特徴とする特許艙求の範囲第１項記載の光学的情報記
録媒体。[Claims] (1) On the substrate: A recording film is formed, and an energy beam is irradiated onto the recording film to form holes or recesses E7.
optical recording member 5 for recording information, and 1'Q
1. An optical information recording medium characterized in that the recording/recording medium is a low-melting point metal, a metal, and a fluorine. (2) The optical information recording medium according to claim m1, wherein the substrate is made of glass or synthetic resin. . (Bl Note: A metal with a melting point between 25°C and 600°C. (6) The content of carbon in the recording film is 5 to 40 atomic percent, and the content of fluorine is 5 to 40 atomic percent. (7) The optical information recording medium according to claim 1, characterized in that the #L thickness of the recording film is 200! to 1 μm. information recording medium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56107034A JPS589232A (en) | 1981-07-10 | 1981-07-10 | Optical information recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56107034A JPS589232A (en) | 1981-07-10 | 1981-07-10 | Optical information recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS589232A true JPS589232A (en) | 1983-01-19 |
Family
ID=14448835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56107034A Pending JPS589232A (en) | 1981-07-10 | 1981-07-10 | Optical information recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS589232A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6110696A (en) * | 1984-05-29 | 1986-01-18 | グロード スリス | Well drilling apparatus and method |
| JPS61110348A (en) * | 1984-11-01 | 1986-05-28 | Mitsubishi Chem Ind Ltd | Optical information recording medium |
| JPS6233348A (en) * | 1985-08-06 | 1987-02-13 | Mitsubishi Chem Ind Ltd | Optical recording medium |
| EP0214539A2 (en) * | 1985-09-02 | 1987-03-18 | Kao Corporation | Optical recording medium |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS545742A (en) * | 1977-06-15 | 1979-01-17 | Fuji Photo Film Co Ltd | Recording material |
| JPS5662192A (en) * | 1979-10-29 | 1981-05-27 | Nippon Telegr & Teleph Corp <Ntt> | Medium for optical recording use and preparation thereof |
-
1981
- 1981-07-10 JP JP56107034A patent/JPS589232A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS545742A (en) * | 1977-06-15 | 1979-01-17 | Fuji Photo Film Co Ltd | Recording material |
| JPS5662192A (en) * | 1979-10-29 | 1981-05-27 | Nippon Telegr & Teleph Corp <Ntt> | Medium for optical recording use and preparation thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6110696A (en) * | 1984-05-29 | 1986-01-18 | グロード スリス | Well drilling apparatus and method |
| JPS61110348A (en) * | 1984-11-01 | 1986-05-28 | Mitsubishi Chem Ind Ltd | Optical information recording medium |
| JPS6233348A (en) * | 1985-08-06 | 1987-02-13 | Mitsubishi Chem Ind Ltd | Optical recording medium |
| EP0214539A2 (en) * | 1985-09-02 | 1987-03-18 | Kao Corporation | Optical recording medium |
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