JPS6117100A - X-ray collimator - Google Patents

X-ray collimator

Info

Publication number
JPS6117100A
JPS6117100A JP59038732A JP3873284A JPS6117100A JP S6117100 A JPS6117100 A JP S6117100A JP 59038732 A JP59038732 A JP 59038732A JP 3873284 A JP3873284 A JP 3873284A JP S6117100 A JPS6117100 A JP S6117100A
Authority
JP
Japan
Prior art keywords
rays
ray
partition wall
collimator
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59038732A
Other languages
Japanese (ja)
Inventor
河合 靖雄
刈谷 卓夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP59038732A priority Critical patent/JPS6117100A/en
Priority to DE19853507340 priority patent/DE3507340A1/en
Publication of JPS6117100A publication Critical patent/JPS6117100A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [技術分野] 本発明は、X線コリメータに関し、特に軟X線用のコリ
メータに関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an X-ray collimator, and particularly to a collimator for soft X-rays.

[従来技術] 一般に、X線源は、X線分析装置等の分野に用いられて
いるが、近年LSI等の半導体製造の分野においても、
サブミクロン線幅の微細パターニングを行う軟X線露光
装置の露光源として用いられている。X線コリメータは
、このようなX線分析装置、X線露光装置等においてX
線源からのX線を平行化するために用いられる。
[Prior Art] Generally, X-ray sources are used in fields such as X-ray analyzers, but in recent years, they have also been used in the field of semiconductor manufacturing such as LSI.
It is used as an exposure source for soft X-ray exposure equipment that performs fine patterning with submicron line widths. X-ray collimators are used in X-ray analysis equipment, X-ray exposure equipment, etc.
Used to collimate X-rays from a radiation source.

X線露光方式は、紫外光などの光露光を行う方式に比べ
て、回持や干渉、反射などによる解像度の低下がほとん
どないので、木質的に微細パターンの転写が容易であり
、また高アスペクト比の転写パターンガ得られるという
利点があるが、他方ではレジストの感度不足やX線源の
低効率のためにスループットが低いという不都合がある
Compared to methods that use light exposure such as ultraviolet light, the X-ray exposure method has almost no reduction in resolution due to recirculation, interference, reflection, etc., so it is easy to transfer fine patterns due to the nature of the wood, and it can also be used with high aspect ratios. Although this method has the advantage of being able to obtain a high-quality transfer pattern, it also has the disadvantage of low throughput due to insufficient sensitivity of the resist and low efficiency of the X-ray source.

先に木発明者が提案したこの種の装置は第1図(a)及
び(b)に示すように、ガラス等の材料により成る板状
部材9に、規則正しく平行かつ同一の断面形状の微細(
直径が25Bm〜100 p、 m程度)な孔4が多数
開けられて構成されている。板状部材9の厚さは通常0
.5乃至5脂腸程度である。このコリメータにおいて図
示上方からX線1が入射すると、孔4により形成される
隔壁5の表面に照射されずに孔4を通過したものが、は
ぼ平行化されたX線2が出射される。
As shown in FIGS. 1(a) and 1(b), this type of device, which was previously proposed by the inventor, is made of fine particles ((
It is composed of a large number of holes 4 with diameters of about 25 Bm to 100 mm). The thickness of the plate member 9 is usually 0.
.. It is about 5 to 5 fat intestines. When X-rays 1 enter this collimator from above in the figure, the X-rays 2 that pass through the holes 4 without being irradiated onto the surface of the partition wall 5 formed by the holes 4 are emitted as nearly parallelized X-rays 2.

しかしながら第1図(b)の部分断面図で示すように、
入射X線1が孔4の入射側の開口部4aにおける隔壁5
のエツジ部5aに照射されると散乱X線7が発生し、ま
た隔壁5の内表面に衝突した入射X線1はそこで吸収さ
れる。更に孔4の出射側の開口部4aにおける隔壁5の
エツジ部5bも同様に散乱X線7を放射状に発散させ、
このコリメータを通過したX線には、平行な出射X線2
と散乱X!jI7が混在する。したがって平行でない散
乱X線7の強度が弱い場合にも、厳密な平行性を要求さ
れる場合、例えばサブミクロンの解像線巾が要求される
/fi光装置には不都合である。殊に入射X線1が隔壁
5の表面に照射されて吸収されると、ガラス材9は変色
、変質し、材質に1よっては分解するという欠点がある
However, as shown in the partial cross-sectional view of FIG. 1(b),
The incident X-rays 1 pass through the partition wall 5 at the opening 4a on the entrance side of the hole 4.
When the edge portion 5a of the partition wall 5 is irradiated, scattered X-rays 7 are generated, and the incident X-rays 1 that collide with the inner surface of the partition wall 5 are absorbed there. Furthermore, the edge portion 5b of the partition wall 5 at the opening 4a on the exit side of the hole 4 also radially diverges the scattered X-rays 7,
The X-rays passing through this collimator have two parallel outgoing X-rays.
And scattered X! jI7 is mixed. Therefore, even if the intensity of the non-parallel scattered X-rays 7 is weak, it is inconvenient for /fi optical devices that require strict parallelism, for example, a submicron resolution line width. In particular, when the incident X-rays 1 are irradiated onto the surface of the partition wall 5 and absorbed, the glass material 9 changes color, changes in quality, and depending on the material, it decomposes.

また多数の微細な孔4により形成される隔壁5は可能な
限り薄い方がX線の有効透過面積が増し好都合であるが
、使用するX線の波長によってはこの隔壁に吸収される
ことなく透過し、コリメータの機能を果さなくなるとい
う欠点がある。X線の中で比較的長波長の軟X線と云え
ども隔壁が薄くなれば透過しやすくなり、露光装置には
不都合である。
Furthermore, it is advantageous to make the partition wall 5 formed by a large number of fine holes 4 as thin as possible because it increases the effective transmission area of X-rays, but depending on the wavelength of the X-rays used, they may pass through the partition wall without being absorbed However, it has the disadvantage that it no longer functions as a collimator. Even soft X-rays, which have a relatively long wavelength among X-rays, can easily pass through thinner partition walls, which is inconvenient for exposure equipment.

[目的] 本発明の目的は、上記従来例の欠点に鑑み、素材を劣化
させることのないX線コリメータを提供することを目的
とする。
[Objective] In view of the drawbacks of the conventional examples described above, an object of the present invention is to provide an X-ray collimator that does not cause deterioration of the material.

[実施例] 以r図面を参照して本発明の詳細な説明する。第2図は
本発明の一実施例の概略部分断面図であり、第1図(a
)及び(b)と同じ部材には同じ参照符号を附しである
[Example] The present invention will be described in detail below with reference to the drawings. FIG. 2 is a schematic partial sectional view of one embodiment of the present invention, and FIG.
) and (b), the same reference numerals are given to the same members.

鉛(pb)の含有率の高いカラスより成る板状部材90
には、お互いに平行にかつ同一の断面形状の微細な孔4
0が多数開けられて構成され、孔40の入射側の開口部
40aにおける隔壁50の端部50a、及び孔40の出
射側の開口部40bにおける隔壁50の端部50bは入
射したX線を散乱させる様に丸味を帯びて形へされてい
る。更に隔壁50の入射側の端部50a表面に、X線吸
収率の高い物質6が被着されている。但し、用途によっ
ては端部50a 、 50b *角状のまま被着しても
良い。
Plate member 90 made of glass with high lead (pb) content
are made of fine holes 4 parallel to each other and having the same cross-sectional shape.
The end 50a of the partition 50 at the entrance side opening 40a of the hole 40 and the end 50b of the partition 50 at the exit side opening 40b of the hole 40 scatter incident X-rays. It is shaped to have a rounded shape. Further, a substance 6 having a high X-ray absorption rate is coated on the surface of the end 50a of the partition wall 50 on the incident side. However, depending on the application, the ends 50a and 50b may be adhered as they are in the square shape.

、尚、上記の隔壁50の端部50a 、50bの形紙゛
方法としては、第1図(a)及び(b)の如く形成され
たコリメータを、フッ酸、フッ硝酸等内に・適当な時間
浸すと、鋭いエツジ部はどエツチングされ易いので結果
的に第3図のようにエツジ部が除去される。被着の方法
としては蒸着、スパッタ等、があり、X線吸収率の高い
物質6としてはAu、 Pt、 Pb等重金属が適当で
あり、使用するX線の波長や強度から適当なものを選べ
は良い。
The method for forming the ends 50a and 50b of the partition wall 50 is to immerse the collimator formed as shown in FIGS. 1(a) and 1(b) in hydrofluoric acid, hydrofluoric acid, etc. If soaked for a long time, the sharp edges are likely to be etched away, resulting in the edges being removed as shown in FIG. There are deposition methods such as vapor deposition and sputtering, and heavy metals such as Au, Pt, and Pb are suitable as substances with high X-ray absorptivity, and an appropriate one can be selected depending on the wavelength and intensity of the X-rays used. is good.

上記構成において、図示上方から、不図示のX線源より
X線lが照射されると、その平行な部分は孔40を通過
して平行なX線2として出射され、他方平行でない部分
は、隔壁50を含む板状部材80に吸収される。この場
合隔壁50の端部50a 、 50bは丸みを帯びてい
るので、散乱X線が発散することがない。更に物質6に
より、入射X線が直接ガラス材90(及び隔壁50)の
表面に照射される率が軽減され、隔壁材であるガラス材
80の変色等を防止することができる。
In the above configuration, when X-rays 1 are irradiated from above in the figure from an X-ray source (not shown), the parallel portions thereof pass through the hole 40 and are emitted as parallel X-rays 2, while the non-parallel portions are emitted as parallel X-rays 2. It is absorbed into the plate member 80 including the partition wall 50. In this case, since the ends 50a and 50b of the partition wall 50 are rounded, scattered X-rays do not diverge. Furthermore, the substance 6 reduces the rate at which the surface of the glass material 90 (and the partition wall 50) is directly irradiated with incident X-rays, and it is possible to prevent the glass material 80, which is the partition material, from discoloring or the like.

第4図は、第2図の実施例の変形例であり、隔壁部50
の出射側の端部50bの表面にも同様にX線吸収物質6
が被着されている。
FIG. 4 shows a modification of the embodiment shown in FIG.
Similarly, an X-ray absorbing substance 6 is also formed on the surface of the end 50b on the emission side.
is covered.

第5図(a)は、第2図及び第4図の実施例の更に別の
変形例であり、第5図(a)及び(b)は、X線露光装
置の概略構成図である。第5図(a)において、X線吸
収物質6は!4壁50の表面に全て被着されている。こ
の場合X線吸収物質6としてAu等の透過の低い物質を
用いる。物質6の表面に1乃至2°でX線が入射すると
、全反射され、はぼ平行な出射X線3が得られる。この
全反射X線3と、孔40を直接通過したX線2とが合成
されて、パターン11を有するX線マスクIOを露光し
5、ウェハ13上に塗布されたX線しジスh12を感光
する。
FIG. 5(a) is yet another modification of the embodiment shown in FIGS. 2 and 4, and FIGS. 5(a) and 5(b) are schematic configuration diagrams of an X-ray exposure apparatus. In FIG. 5(a), the X-ray absorbing substance 6 is! All the surfaces of the four walls 50 are coated. In this case, a material with low transmission such as Au is used as the X-ray absorbing material 6. When X-rays are incident on the surface of the substance 6 at an angle of 1 to 2 degrees, they are totally reflected, resulting in approximately parallel outgoing X-rays 3. This totally reflected X-ray 3 and the X-ray 2 that directly passed through the hole 40 are combined to expose the X-ray mask IO having the pattern 11 5, and expose the X-ray strip h12 coated on the wafer 13. do.

[効果] 以上説明したように本発明によれば、微細貫通孔により
形成される板状部材の隔壁の表面にX線吸収率の高い物
質を被着することにより、有用でない散乱X線の発生を
防止することができると同時に隔壁材であるガラス材を
保護することができ、また隔壁の表面全てに上記の物質
を被着すれば入射光線の反射光も利用することができる
ので、X線露光装置に使用すればスルーブツトを増大す
ることができる。
[Effect] As explained above, according to the present invention, by coating a material with high X-ray absorption rate on the surface of the partition wall of a plate-like member formed by fine through holes, generation of unuseful scattered X-rays can be prevented. At the same time, it is possible to protect the glass material that is the partition wall material.Also, if the above material is coated on all the surfaces of the partition wall, the reflected light of the incident light can be used, so X-ray If used in an exposure device, the throughput can be increased.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)は、従来のX線コリメータの概略部分断面
図、第1図(b)は、第1図(a)の概略部分断面図で
ある。第2図は、本発明の一実施例の概略部分断面図、
第3図は、第2図の実施例の製造工程を説明する概略部
分断面図、第4図及び第5図(a)は、それぞれ本発明
の他の実施例の概略部分断面図、第4図(a)及び(b
)は、−X線露光装置の概略構成図である。 40−m−微細貫通口 40a 、 40b−一開口部 50−m−隔壁 50a、 50b −−一 隔壁端部 90−m−板状部材 6 −−−X線吸収部材 m 5 区1j 、手続補正書(方式) %式% 1、事件の表示 昭和58年 特許願 第38732号
2、発明の名称 X線コリメータ 3、補正をする者 事件との関係  特許出願人 (100)キャノン株式会社 4、代、理 人 住所  東京都港区赤坂1丁目9番20号5、補正命令
の日付 発送日:昭和60年7月30日 6、補正の対象 明細書の「図面の簡単な説明」の欄 7、補正の内容 明細書の第7頁第13行目の「第4図(a)及び(b)
は、」を「第5図(b)は、」に訂正する。
FIG. 1(a) is a schematic partial sectional view of a conventional X-ray collimator, and FIG. 1(b) is a schematic partial sectional view of FIG. 1(a). FIG. 2 is a schematic partial cross-sectional view of an embodiment of the present invention;
3 is a schematic partial sectional view illustrating the manufacturing process of the embodiment shown in FIG. 2, and FIGS. Figures (a) and (b)
) is a schematic configuration diagram of an X-ray exposure apparatus. 40-m-fine through-holes 40a, 40b-1 opening 50-m-partition 50a, 50b--1 partition end 90-m-plate member 6---X-ray absorbing member m5 section 1j, procedural amendment Type (method) % formula % 1. Indication of the case 1982 Patent Application No. 38732 2. Name of the invention , Address: 1-9-20-5 Akasaka, Minato-ku, Tokyo Date of amendment order: July 30, 1985 6 Column 7 of "Brief explanation of drawings" of the specification subject to amendment; “Figure 4 (a) and (b)” on page 7, line 13 of the statement of contents of the amendment
'' is corrected to ``Figure 5(b) is''.

Claims (1)

【特許請求の範囲】[Claims] X線源からのX線を平行化するX線コリメータにおいて
、多数の微細な貫通口を有する部材を含み、該貫通口に
より形成される該部材の隔壁の少なくとも端部の表面に
X線吸収率の高い物質が被着されていることを特徴とす
るX線コリメータ。
An X-ray collimator that collimates X-rays from an X-ray source includes a member having a large number of minute through-holes, and has an X-ray absorption coefficient on the surface of at least the end of the partition wall of the member formed by the through-holes. An X-ray collimator characterized by being coated with a substance having a high
JP59038732A 1984-03-02 1984-03-02 X-ray collimator Pending JPS6117100A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59038732A JPS6117100A (en) 1984-03-02 1984-03-02 X-ray collimator
DE19853507340 DE3507340A1 (en) 1984-03-02 1985-03-01 X-ray collimator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59038732A JPS6117100A (en) 1984-03-02 1984-03-02 X-ray collimator

Publications (1)

Publication Number Publication Date
JPS6117100A true JPS6117100A (en) 1986-01-25

Family

ID=12533495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59038732A Pending JPS6117100A (en) 1984-03-02 1984-03-02 X-ray collimator

Country Status (1)

Country Link
JP (1) JPS6117100A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0248897U (en) * 1988-09-30 1990-04-04
JP2006317440A (en) * 2005-05-10 2006-11-24 General Electric Co <Ge> Collimator system, method and apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0248897U (en) * 1988-09-30 1990-04-04
JPH0539519Y2 (en) * 1988-09-30 1993-10-06
JP2006317440A (en) * 2005-05-10 2006-11-24 General Electric Co <Ge> Collimator system, method and apparatus

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