JPS61170020A - Device for chemical vapor deposition - Google Patents
Device for chemical vapor depositionInfo
- Publication number
- JPS61170020A JPS61170020A JP1010485A JP1010485A JPS61170020A JP S61170020 A JPS61170020 A JP S61170020A JP 1010485 A JP1010485 A JP 1010485A JP 1010485 A JP1010485 A JP 1010485A JP S61170020 A JPS61170020 A JP S61170020A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- material gas
- step coverage
- vapor deposition
- chemical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は１％に半導体装置の製造において用いられるＣ
ＶＤ装置の改良に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention applies to C
Concerning improvements to VD devices.
従来の常圧ＣＶＤ装置、特に誘導加熱炉は、第２図にこ
の模式図を示す様に、ノズル５に設けられた穴が半導体
ウェハー３に平行な方向に形成されているので、原料ガ
ス６はキャリヤーガスと共にウェハー３に平行に導入さ
れる構造となってぃた。なお、２は基板サセプタ、４は
誘導加熱コイルである。Conventional atmospheric pressure CVD equipment, especially induction heating furnaces, have holes provided in nozzle 5 in a direction parallel to semiconductor wafer 3, as shown in the schematic diagram in FIG. was introduced in parallel to the wafer 3 together with the carrier gas. Note that 2 is a substrate susceptor and 4 is an induction heating coil.
このような常圧ＣＶＤ装置では、ウェハー３上にＣＶＤ
によって形成される膜のステ、プカパレッジが悪いとい
う欠点がある。すなわち、第３図（ＪＲ）に示す様に、
シリコン基板ｌＯの表面を酸化膜１１が選択的に覆って
いるウェハー３に対して、ＣＶＤによりて同図中）のよ
うに例えば多結晶シリコン層１２を形成する場合、酸化
膜１１による段差のために１段底部まで原料ガスが侵入
できず、この結果、段底部の膜厚ｔｓが他部分の膜厚ｔ
２に比してかなり薄くなるという欠点があった。In such a normal pressure CVD apparatus, CVD is performed on the wafer 3.
The disadvantage is that the film formed by this method has poor stent and puckiness. That is, as shown in Figure 3 (JR),
When forming, for example, a polycrystalline silicon layer 12 by CVD on a wafer 3 whose surface is selectively covered with an oxide film 11, as shown in the figure (in the same figure), due to the step difference caused by the oxide film 11. As a result, the film thickness ts at the bottom of the stage becomes smaller than the film thickness t at other parts.
It had the disadvantage that it was considerably thinner than 2.
このようなステップカバレッジの問題点を解決するため
に１本発明のＣＶＤ装置は、ウェハーに対して垂直に原
料ガスを導入する構造になっていることを特徴とし、こ
の結果１段底部にも原料ガスが侵入できる様になりステ
ップカバレッジが改善され得る。In order to solve this problem of step coverage, the CVD apparatus of the present invention is characterized by having a structure in which the raw material gas is introduced perpendicularly to the wafer. Step coverage may be improved by allowing gas to enter.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例を示す縦断面図である。第１
図から明らかなように、本装置のノズル１は断面Ｔ字型
に形成されており、かつガス吹出口がウェハー３と対向
するように形成されている。FIG. 1 is a longitudinal sectional view showing an embodiment of the present invention. 1st
As is clear from the figure, the nozzle 1 of the present apparatus is formed to have a T-shaped cross section, and the gas outlet is formed to face the wafer 3.
この結果、原料ガスはウェハー３に対して垂直方向に導
入される。As a result, the source gas is introduced perpendicularly to the wafer 3.
次に、本発明の効果を具体的に説明する。第１図及び第
２図の装置にて、例えば第３図（ａ）のごとき、酸化膜
１１の開口幅１＝Ｌ２μｍの段差に８ｉＨ４ガス、７０
０℃で第３図（ｂ）のようにポリシリコン層１２の成長
を行った時のステ、プカバレッジを種々の段差について
調べた。ステ、プカバレッジは開口底部と表面との膜厚
比で見ることができるので、第３図（ｂ）のｔ３／ｌ−
と考えればよいことがわかる。その結果を第４図に示す
。第４図によれば本発明の基板に対して垂直に原料ガス
を導入する第１図の装置の方が約２０−程度ステップカ
バレッジが改善されていることがわかる。Next, the effects of the present invention will be specifically explained. In the apparatus shown in FIGS. 1 and 2, for example, as shown in FIG. 3(a), 8iH4 gas and 70
The step coverage when the polysilicon layer 12 was grown at 0° C. as shown in FIG. 3(b) was investigated for various step differences. Step coverage can be seen by the film thickness ratio between the bottom of the opening and the surface, so t3/l- in Figure 3(b)
If you think about it, you will understand. The results are shown in FIG. According to FIG. 4, it can be seen that the step coverage of the apparatus of FIG. 1, which introduces the raw material gas perpendicularly to the substrate of the present invention, is improved by about 20 degrees.
以上説明したように本発明は、基板に垂直に原料ガス管
・導入することによりステップカバレッジを約２Ｇ％改
善できる。As explained above, according to the present invention, the step coverage can be improved by about 2G% by introducing the raw material gas pipe perpendicularly to the substrate.
第１図は本発明の一実施例を示す模式断面図、第２図に
従来例の装置断面図、第３図（ａ）はウェハー断面口、
第３図（ｂ）はＣＶＤ成長後のウェノ・−断面図、第４
図は成長膜厚比を示す特性グラフ。
１・・・・・・ガスノズル、２・・・・・・ＳｉＣサセ
プター、３・・・・・・ウェハー、４・・・・・・誘導
加熱コイル、５・・・・・・従来の原料ガスノズル、６
・・・・・・原料ガス、１０・・・°°°シリコン基板
、１１・・・・・・酸化膜、１２・・・・・・ポリシリ
コン。
第２図
篤 ３ 回 （Ｌ）
Ｚ
筋 ３ 図 （トノFIG. 1 is a schematic sectional view showing an embodiment of the present invention, FIG. 2 is a sectional view of a conventional device, and FIG. 3(a) is a wafer cross-sectional view.
Figure 3(b) is a cross-sectional view of the weno layer after CVD growth.
The figure is a characteristic graph showing the growth film thickness ratio. 1... Gas nozzle, 2... SiC susceptor, 3... Wafer, 4... Induction heating coil, 5... Conventional raw material gas nozzle ,6
... Raw material gas, 10...°°° Silicon substrate, 11... Oxide film, 12... Polysilicon. Figure 2 Atsushi 3 times (L) Z muscle Figure 3 (Tonneau
Claims (1)
主面に垂直に原料ガスを導入することを特徴とするＣＶ
Ｄ装置。CVD characterized by introducing source gas perpendicularly to the main surface of the wafer on which the CVD film is to be grown.
D device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1010485A JPS61170020A (en) | 1985-01-23 | 1985-01-23 | Device for chemical vapor deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1010485A JPS61170020A (en) | 1985-01-23 | 1985-01-23 | Device for chemical vapor deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61170020A true JPS61170020A (en) | 1986-07-31 |
Family
ID=11741005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1010485A Pending JPS61170020A (en) | 1985-01-23 | 1985-01-23 | Device for chemical vapor deposition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61170020A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4827738B2 (en) * | 2004-09-28 | 2011-11-30 | 株式会社Ｐｔｐ | Remote controller |
-
1985
- 1985-01-23 JP JP1010485A patent/JPS61170020A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4827738B2 (en) * | 2004-09-28 | 2011-11-30 | 株式会社Ｐｔｐ | Remote controller |
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