JPS61168439A - Method for removing semiconductor wafer in chuck mechanism - Google Patents
Method for removing semiconductor wafer in chuck mechanismInfo
- Publication number
- JPS61168439A JPS61168439A JP60005786A JP578685A JPS61168439A JP S61168439 A JPS61168439 A JP S61168439A JP 60005786 A JP60005786 A JP 60005786A JP 578685 A JP578685 A JP 578685A JP S61168439 A JPS61168439 A JP S61168439A
- Authority
- JP
- Japan
- Prior art keywords
- chuck mechanism
- wafer
- water
- concave
- mechanism body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Jigs For Machine Tools (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、研削盤における吸着型チャック機構から、特
に極薄状の半導体ウェハを安全に開放し。DETAILED DESCRIPTION OF THE INVENTION The present invention safely releases particularly ultra-thin semiconductor wafers from a suction type chuck mechanism in a grinding machine.
取外すことのできるウェハの取外し方法に関する。This invention relates to a method for removing a removable wafer.
現今における弛まざる技術革新は目覚ましいものがあり
、其の先端技術による開発によって、優れた様々な商品
群が多数送出されている。Today's continuous technological innovation is remarkable, and the development of cutting-edge technology has produced a large number of excellent product groups.
本発明に係る特にこの種のコンピュータ、マイコン等を
搭載した電子関連機器の開発は、実に日進月歩の感があ
り、更により高度な応用技術の開発に鏑を削っている実
状にある。In particular, the development of electronic equipment equipped with computers, microcomputers, etc. of this type according to the present invention seems to be progressing rapidly, and efforts are being made to develop even more advanced applied technologies.
このため半導体は、より超高度の質性と、小型化に繋が
る或は大量集積回路化の図れるような、極薄のシリコン
ウェハが要求されてきている。For this reason, semiconductors are required to have ultra-thin silicon wafers that have even higher quality and can lead to miniaturization or mass integration of circuits.
従来、この種の吸着型チャック機構では、研削後の比較
的肉厚のウェハの場合にあっては、ウェハを何等かの方
法によってそのまま剥がしても問題点はtじなかったが
、前記の如く、皇々超高精度の品質性が要求され、シリ
コンウェハの極薄化傾向が高まっている現時点において
は、0,4m程度の肉厚のウェハであっても、バキュー
ム吸引によって取外そうとした場合にウェハの折損事故
が頻繁に発生する。このためウェハを極薄たる0.2m
mに仕上げる研削技術は可能であるが、然し乍らこれを
チャック機構から、研削済みの鏡面に傷を付けずウェハ
を取外す方法はいまだに確立されていない。Conventionally, with this type of suction type chuck mechanism, in the case of a relatively thick wafer after grinding, there was no problem even if the wafer was peeled off by some method, but as mentioned above, Nowadays, ultra-high precision quality is required and there is a growing trend towards ultra-thin silicon wafers, so even wafers with a thickness of about 0.4 m have been removed using vacuum suction. In such cases, wafer breakage accidents frequently occur. This makes the wafer ultra-thin at 0.2m.
Although it is possible to use a grinding technique to finish the wafer to a size of m, a method for removing the wafer from the chuck mechanism without damaging the ground mirror surface has not yet been established.
本発明は上記の事由に鑑みて鋭意研鎖の結果、これらの
チャック機構における極薄(0,2mm)ウェハを、安
全に然も確実に取外せる方法を創作しこれを供せんとす
るものである。In view of the above reasons, and as a result of extensive research, the present invention aims to create and provide a method for safely and reliably removing ultra-thin (0.2 mm) wafers from these chuck mechanisms. be.
斯る目的を達成せしめた本発明チャック機構における半
導体ウェハの取外し方法による実施例を。An embodiment of a method for removing a semiconductor wafer in a chuck mechanism of the present invention that achieves the above object.
以下図面によって説明する。This will be explained below with reference to the drawings.
第1図は複数箇所にチャック機構を有する研削盤のチャ
ック機構本体より本発明の、一部分の構成要部を現した
概要図であって、第2図はチャック機構からウェハが浮
上した状態を現した概要説明図である。FIG. 1 is a schematic diagram showing a part of the main components of the present invention from the chuck mechanism main body of a grinding machine having chuck mechanisms at multiple locations, and FIG. 2 shows a state where a wafer is floating from the chuck mechanism. FIG.
本発明は、第1図による構成要部を現した図示の如く、
研削盤のチャック機構本体1に、研削するウェハAを吸
着させるための機構を形成する陥部2を、チャック機構
本体1の規模に合わせて複数箇所へ穿設すると共に、該
下面のほぼ中心辺へ水流を噴出するための注水口3を形
成せしめて、前記陥部2内へ該陥部の表面と同等か若し
くは若干表出させ且つ底部との間に間隙部5を設けて、
ポーラス状又はほぼ垂直に多孔性を有するセラミック4
を回転自在に軸承固定せしめて本発明を構成したもので
ある。As shown in FIG. 1 showing the main components of the present invention,
In the chuck mechanism main body 1 of the grinding machine, recesses 2 forming a mechanism for adsorbing the wafer A to be ground are bored at a plurality of locations according to the scale of the chuck mechanism main body 1, and at approximately the center of the lower surface. Forming a water inlet 3 for spouting a water flow into the recess 2, exposing it to the same level as the surface of the recess 2 or slightly, and providing a gap 5 between it and the bottom,
Ceramic with porous or almost vertical porosity 4
The present invention is constructed by rotatably fixed on a bearing.
この様にしてチャック機構を構成したことによって、エ
アーバキュームにより吸着されているウェハA、並びに
液面張力によって吸着されたウェハAのいずれの方法で
吸着したウェハであっても、前記チャック機構本体1に
穿設した陥部2の注水口3から、水流を注入噴出せしめ
ることにより、当該ウェハAは噴出する水圧によって安
全かつ確実に開放されて浮上し、これを適宜な手段によ
り回収して、別のシステム装置へ移送することができる
ものである。By configuring the chuck mechanism in this manner, the chuck mechanism main body 1 By injecting and ejecting a water stream from the water inlet 3 of the recess 2 drilled in the hole, the wafer A is safely and reliably released by the ejected water pressure and floats to the surface. can be transferred to other system devices.
以上の如く、本発明は実に研削後の鏡面に、何等障害を
及ぼす作為、又は余分な負担等をかける處れの全く存し
ないウェハの取外し方法であって、当初の目的とする極
薄の半導体ウェハにおいても。As described above, the present invention is a method for removing a wafer that does not cause any damage to the mirror surface after grinding or imposes an extra burden on the mirror surface after grinding, and is a method for removing ultra-thin semiconductors, which is the original objective. Even in wafers.
充分対応でき得る取外し手段となるため、其の貢献性は
計り知れないものがあり、極めて有意義な効果を奏する
ものである。Since it becomes a means of removal that can be used in a sufficient manner, its contribution is immeasurable and has extremely significant effects.
第1図は本発明の一実施例として複数箇所にチャック機
構を有する研削盤チャック機構本体より、本発明の一部
分の構成要部を現した概要図であって、第2図はチャッ
ク機構から取外した状態を現した概要説明図である。A
−ウェハ。
1−チャック機構本体、2−陥部、3−注水口。
4−多孔性セラミック、5−間隙部。FIG. 1 is a schematic diagram showing a part of the main components of the present invention from the main body of a grinding machine chuck mechanism having chuck mechanisms at multiple locations as an embodiment of the present invention, and FIG. FIG. A
-Wafer. 1-chuck mechanism body, 2-recess, 3-water inlet. 4-porous ceramic, 5-interstitial area.
Claims (1)
ハをチャックして研削する研削盤のチャック機構本体に
おいて、 該チャック機構をポーラス状又は垂直に多孔性を有する
セラミックで形成すると共に、該チャック機構本体の吸
着機構が位置する下面へこの多孔性セラミックの底面よ
り表面へ向けて水流を噴出せしめるための注水口を設け
て構成したものであって、研削後の吸着されているウェ
ハのチャック機構を、当該噴流による水圧によってウェ
ハを浮上せしめて開放できる様に成したことを特徴とす
るチャック機構における半導体ウェハの取外し方法。[Scope of Claims] In a chuck mechanism body of a grinding machine that has a liquid surface tension or air adsorption mechanism and chucks and grinds a plurality of semiconductor wafers, the chuck mechanism is made of porous or vertically porous ceramic. At the same time, a water inlet is provided on the lower surface of the chuck mechanism main body where the suction mechanism is located, for jetting a water stream from the bottom surface of the porous ceramic toward the surface. 1. A method for removing a semiconductor wafer in a chuck mechanism, characterized in that the chuck mechanism for the wafer is configured such that the wafer can be levitated and released by the water pressure generated by the jet.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60005786A JPS61168439A (en) | 1985-01-18 | 1985-01-18 | Method for removing semiconductor wafer in chuck mechanism |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60005786A JPS61168439A (en) | 1985-01-18 | 1985-01-18 | Method for removing semiconductor wafer in chuck mechanism |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61168439A true JPS61168439A (en) | 1986-07-30 |
Family
ID=11620783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60005786A Pending JPS61168439A (en) | 1985-01-18 | 1985-01-18 | Method for removing semiconductor wafer in chuck mechanism |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61168439A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2471712A (en) * | 2009-07-10 | 2011-01-12 | De Beers Centenary AG | Gemstone alignment system |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56164549A (en) * | 1980-05-23 | 1981-12-17 | Disco Abrasive Sys Ltd | Mounting method by positioning |
JPS5840338B2 (en) * | 1976-03-19 | 1983-09-05 | 松下電器産業株式会社 | Manufacturing method for semiconductor devices |
-
1985
- 1985-01-18 JP JP60005786A patent/JPS61168439A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5840338B2 (en) * | 1976-03-19 | 1983-09-05 | 松下電器産業株式会社 | Manufacturing method for semiconductor devices |
JPS56164549A (en) * | 1980-05-23 | 1981-12-17 | Disco Abrasive Sys Ltd | Mounting method by positioning |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2471712A (en) * | 2009-07-10 | 2011-01-12 | De Beers Centenary AG | Gemstone alignment system |
US9079331B2 (en) | 2009-07-10 | 2015-07-14 | De Beers Centenary AG | Gemstone alignment |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR0154610B1 (en) | Method for polishing semiconductor substrate and apparatus for the same | |
JP2800802B2 (en) | Semiconductor wafer CMP equipment | |
US4738056A (en) | Method and blasting apparatus for preparation of silicon wafer | |
JP2004510334A5 (en) | ||
SG76581A1 (en) | Object separating apparatus and method and method of manufacturing semiconductor substrate | |
JP3082603B2 (en) | Wafer transfer device | |
JPH10135316A (en) | Vacuum chucking method for thin substrate and vacuum chuck table apparatus therefor | |
JP2018086693A (en) | Grinding device | |
JP2000108016A (en) | Method for increasing release of semiconductor wafer | |
JP2008060220A (en) | Gettering layer forming device | |
JPH09171980A (en) | Manufacture of semiconductor device | |
JP3893749B2 (en) | Thin plate processing method and processing apparatus | |
JPH0778864A (en) | Semiconductor manufacturing equipment and method of manufacturing semiconductor device | |
JPS61168439A (en) | Method for removing semiconductor wafer in chuck mechanism | |
JP6632344B2 (en) | Wafer transfer device | |
JPH04267540A (en) | Method of removing semiconductor wafer in chuck mechanism | |
US20030232580A1 (en) | Method of machining silicon wafer | |
JPS61168438A (en) | Method for removing semiconductor wafer in chuck mechanism | |
JPH0248137B2 (en) | ||
JPH03120718A (en) | Method for removing semiconductor wafer in chucking mechanism | |
JPS61249258A (en) | Fremoving method for semiconductor silicon wafer in automatic surface grinder | |
JPH0414849A (en) | Method of removing a semiconductor wafer in chuck mechanism | |
JPH04206544A (en) | Transfer method for semiconductor wafer | |
JPS61182738A (en) | Free size chucking mechanism for wafer | |
JPH04267541A (en) | Method of removing semiconductor wafer in chuck mechanism |